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| Number | Title | Issue Date |
| 8188512 | Growth of germanium epitaxial thin film with negative photoconductance characteristics and photodiode using the same A method of growing a germanium (Ge) epitaxial thin film having negative photoconductance characteristics and a photodiode using the same are provided. The method of growing the germanium (Ge) epitaxial thin film includes growing a germanium (Ge) thin film on a sili... | 05/29/2012 |
| 8188524 | CMOS image sensor with wide dynamic range The present invention relates a CMOS (Complementary Metal Oxide Semiconductor) image sensor capable of improving dynamic range by using an additional driver transistor. The CMOS image sensor according to the present invention has a pixel array which has a plurality ... | 05/29/2012 |
| 8183621 | Non-volatile memory cell having a heating element and a substrate-based control gate The number of times that a non-volatile memory (NVM) can be programmed and erased is substantially increased by utilizing a localized heating element that anneals the oxide that is damaged by tunneling charge carriers when the NVM is programmed and erased. The progr... | 05/22/2012 |
| 8183627 | Hybrid fin field-effect transistor structures and related methods Semiconductor-on-insulator structures facilitate the fabrication of devices, including MOSFETs that are at least partially depleted during operation and FinFETs including bilayer fins and/or crystalline oxide. ... | 05/22/2012 |
| 8183068 | Nitride-based semiconductor light emitting device and method of manufacturing the same A nitride-based semiconductor light emitting device having an improved structure in which light extraction efficiency is improved and a method of manufacturing the same are provided. The nitride-based semiconductor light emitting device comprises an n-clad layer, an... | 05/22/2012 |
| 8178931 | Bridge for semiconductor internal node A method and apparatus for forming connections within a semiconductor device is disclosed. The semiconductor device incorporates a contact bridge between transistor contacts in close proximity. The contact bridge comprises a plurality of metal pillars each having a ... | 05/15/2012 |
| 8178411 | Method for producing a stop zone in a semiconductor body and semiconductor component having a stop zone A method for producing a buried stop zone in a semiconductor body and a semiconductor component having a stop zone, the method including providing a semiconductor body having a first and a second side and a basic doping of a first conduction type. The method further... | 05/15/2012 |
| 8173543 | Method of forming hole in semiconductor device using mask The invention provides a method of manufacturing a semiconductor device which achieves high reliability and high yield as well as high production efficiency. Back surface grinding (back grinding) is performed to a semiconductor substrate to thin the semiconductor su... | 05/08/2012 |
| 8174129 | Silicon-based thin substrate and packaging schemes A silicon-based thin package substrate is used for packaging semiconductor chips. The silicon-based thin package substrate preferably has a thickness of less than about 200 μm. A plurality of traces are formed in the silicon-based thin package substrate, connecting... | 05/08/2012 |
| 8168475 | Semiconductor package formed within an encapsulation Provided are a semiconductor package which is small in size but includes a large number of terminals disposed at intervals equal to or greater than a minimum pitch, and a method of fabricating the semiconductor package. The semiconductor package includes a semicondu... | 05/01/2012 |
| 8168516 | Method of fabricating single crystal gallium nitride semiconductor substrate, nitride gallium semiconductor substrate and nitride semiconductor epitaxial substrate A method of fabricating a single crystal gallium nitride substrate the step of cutting an ingot of single crystal gallium nitride along predetermined planes to make one or more single crystal gallium nitride substrates. The ingot of single crystal gallium nitride is... | 05/01/2012 |
| 8169081 | Conductive routings in integrated circuits using under bump metallization An integrated circuit structure includes a first conductive layer and an under bump metallization layer over the first conductive layer. The first conductive layer has a first conductive region and a second conductive region electrically isolated from the first cond... | 05/01/2012 |
| 8169010 | Low-voltage image sensor with sensing control unit formed within Provided are an image sensor and a method of sensing the same. The image sensor includes: a light receiving device; a signal conversion unit including a transfer transistor having a plurality of transfer gates and for converting photocharges generated by the light r... | 05/01/2012 |
| 8169011 | Image sensor and method of manufacturing the same An image sensor comprises a substrate including a photodiode, and an insulation pattern structure making contact with the photodiode on the substrate. An anti-reflection pattern is formed on the insulation pattern structure and the substrate. The anti-reflection pat... | 05/01/2012 |
| 8169007 | Asymmetric junction field effect transistor A junction field effect transistor (JFET) in a semiconductor substrate includes a source region, a drain region, a channel region, an upper gate region, and a lower gate region. The lower gate region is electrically connected to the upper gate region. The upper and ... | 05/01/2012 |
| 8163576 | Nitride semiconductor device having a silicon-containing layer and manufacturing method thereof A semiconductor device and a manufacturing method thereof are provided which enable reduction and enhanced stability of contact resistance between the back surface of a nitride substrate and an electrode formed thereover. A nitride semiconductor device includes an n... | 04/24/2012 |
| 8163597 | Semiconductor device and method of forming no-flow underfill material around vertical interconnect structure A semiconductor device is made by forming a conductive layer over a first sacrificial carrier. A solder bump is formed over the conductive layer. A no-flow underfill material is deposited over the first carrier, conductive layer, and solder bump. A semiconductor die... | 04/24/2012 |
| 8159035 | Metal gates of PMOS devices having high work functions A semiconductor structure includes a refractory metal silicide layer; a silicon-rich refractory metal silicide layer on the refractory metal silicide layer; and a metal-rich refractory metal silicide layer on the silicon-rich refractory metal silicide layer. The ref... | 04/17/2012 |
| 8154100 | Electromagnetic wave detecting element The present invention is to provide an electromagnetic wave detecting element that can suppress the trapping of charges in a semiconductor layer. Plural lower electrodes, which collect charges generated in the semiconductor layer, are each provided to cover at least... | 04/10/2012 |
| 8154058 | Bio-sensor and method of manufacturing the same A bio-sensor includes a gate dielectric formed on a silicon semiconductor substrate, a gate electrode of a conductive diamond film formed on the gate dielectric, probe molecules bonded on the gate electrode for detecting biomolecules, and source/drain regions formed... | 04/10/2012 |
| 8154116 | Layered chip package with heat sink A layered chip package includes: a plurality of layer portions stacked, each of the layer portions including a semiconductor chip; and a heat sink. Each of the plurality of layer portions has a top surface, a bottom surface, and four side surfaces. The heat sink has... | 04/10/2012 |
| 8148756 | Separative extended gate field effect transistor based uric acid sensing device, system and method for forming thereof A separative extended gate field effect transistor based uric acid sensing device is provided, including: a substrate; a conductive layer including a silver paste layer on the substrate and a graphite-based paste layer on the silver paste layer; a conductive wire ex... | 04/03/2012 |
| 8148782 | Semiconductor device with ESD protection function and ESD protection circuit A semiconductor device with an ESD protection function has an SOI substrate, first to fourth diffusion layers, and a gate. The SOI substrate has a semiconductor layer on an insulation layer. The first diffusion layer is of a first conductivity type and is formed on ... | 04/03/2012 |
| 8148204 | Circuit connection structure, method for producing the same and semiconductor substrate for circuit connection structure A circuit connection structure that exhibits excellent adhesiveness between a heat resistant resin film and a circuit adhesive member, even under high temperature and high humidity, is provided by introducing a chemically stable functional group into the heat resist... | 04/03/2012 |
| 8143618 | ZnO based semiconductor device and its manufacture method A ZnO based semiconductor device includes: a lamination structure including a first semiconductor layer containing ZnO based semiconductor of a first conductivity type and a second semiconductor layer containing ZnO based semiconductor of a second conductivity type ... | 03/27/2012 |
| 8143714 | Integrated circuit and method for producing the same An integrated circuit provides a carrier substrate, a wiring level above a carrier substrate, wherein the wiring level comprises a first conductor track composed of a first conductive material and a second conductor track composed of the first conductive material, a... | 03/27/2012 |
| 8143716 | Semiconductor device with plate-shaped component The invention provides a semiconductor device including a plurality of stacked semiconductor chips, which offers a higher degree of freedom in selecting a chip size of the semiconductor chip and arranging the routing, and increase of the reliability and speed in sig... | 03/27/2012 |
| 8143722 | Wafer-level interconnect for high mechanical reliability applications An interconnect structure comprises a solder including nickel (Ni) and tin (Sn), with the nickel in a range of 0.01 to 0.20 percent by weight. The interconnect structure further includes an intermetallic compound (IMC) layer in contact with the solder. The (IMC) lay... | 03/27/2012 |
| 8138606 | Wiring conductor, method for fabricating same, terminal connecting assembly, and Pb-free solder alloy A Pb-free Sn-based material part of a wiring conductor is provided at least at a part of its surface, and the Sn-based material part includes a base metal doped with an oxidation control element. The oxidation control element is at least one element selected from a ... | 03/20/2012 |
| 8134196 | Integrated circuit system with metal-insulator-metal circuit element An integrated circuit system is provided including forming a substrate, forming a first contact having multiple conductive layers over the substrate and a layer of the multiple conductive layers on other layers of the multiple conductive layers, forming a dielectric... | 03/13/2012 |
| 8129813 | Optoelectronic sensor and device for 3D distance measurement The present invention relates to an optoelectronic sensor for 5 demodulating a modulated photon flux (50), and to a measuring device, in particular for 3D distance measurement, having at least one optoelectronic sensor of this type. The optoelectronic sensor ... | 03/06/2012 |
| 8129823 | Materials, structures and methods for microelectronic packaging Highly reliable interconnections for microelectronic packaging. In one embodiment, dielectric layers in a build-up interconnect have a gradation in glass transition temperature; and the later applied dielectric layers are laminated at temperatures lower than the gla... | 03/06/2012 |
| 8126152 | Method and arrangement for a decoder for multi-channel surround sound The basic concept of the present invention is to extrapolate a partially known spatial covariance matrix of a multi-channel signal in the parameter domain. The extrapolated covariance matrix is used with the downcoded downmix signal in order to efficiently generate ... | 02/28/2012 |
| 8125002 | Semiconductor device and inverter circuit having the same A semiconductor device includes a semiconductor substrate, an insulated gate transistor formed to the semiconductor substrate, a diode formed to the semiconductor substrate, and a control transistor formed to the semiconductor substrate. A first current terminal of ... | 02/28/2012 |
| 8126151 | Audio signal processing circuit An audio signal processing circuit comprising: a holding circuit configured to receive a clock signal and set data corresponding to the clock signal, and to hold the set data; a processing circuit configured to process at least one of a first audio signal and a seco... | 02/28/2012 |
| 8115295 | Semiconductor device A miniaturized semiconductor device has a package substrate, a semiconductor chip mounted on the main surface of the package substrate and having plural LNAs each for amplifying a signal, an RF VCO for converting the frequency of the signal supplied from each LNA, a... | 02/14/2012 |
| 8115282 | Memory cell device and method of manufacture According to one embodiment of the present invention, a solid state electrolyte memory cell includes a cathode, an anode and a solid state electrolyte. The anode includes an intercalating material and first metal species dispersed in the intercalating material. ... | 02/14/2012 |
| 8115201 | Semiconductor device with oxide semiconductor formed within One of the objects of the present invention is to provide a thin film transistor using an oxide semiconductor film containing indium (In), gallium (Ga), and zinc (Zn), in which the contact resistance between the oxide semiconductor layer and a source and drain elect... | 02/14/2012 |
| 8114709 | Electronic device and lead frame A lead frame facilitates the handling, positioning, attachment, and/or continued integrity of multiple dies, without the use of multiple separate parts, such as jumpers. The lead frame includes a number of structures, each of which is attached to at least one lead. ... | 02/14/2012 |
| 8115212 | Positive electrode for semiconductor light-emitting device An object of the present invention is to provide a transparent positive electrode for use in a face-up-type chip which can emit intense light even using a low drive voltage. The inventive positive electrode for a semiconductor light-emitting device comprises ... | 02/14/2012 |
