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| Number | Title | Issue Date |
| 6339492 | Tunable optical filter The present invention relates to a tunable optical filter having a variable wavelength characteristic of transmittance. The tunable optical filter includes first and second polarizers each having a transmission axis determining a polarization axis of tran... | 01/15/2002 |
| 5042047 | Laser apparatus A laser beam generated between a total reflector and an output coupler is turned back by plural reflectors which are mounted in a discharge region along two main electrodes at 45°, and the discharge region is divided into plural divided discharge regions... | 08/20/1991 |
| 5040185 | Large volume gaseous electric discharge system A control circuit for a laser system having a first and second power supply connected in parallel. A mode selector is available to the laser operator to change the operational mode of the laser system from continuous to pulse mode or vice versa, and any c... | 08/13/1991 |
| 5027361 | Efficient laser harmonic generation employing a low-loss external optical resonator TEMOOq laser radiation derived from a diode-pumped ring laser is directed into a faceted member of nonlinear optical material defining either a standing wave or ring monolithic optical resonator to generate harmonic laser radiation. The losses ... | 06/25/1991 |
| 4979176 | Acousto-optical device with lithium tantalate transducer An acousto-optical device includes a solid state substrate having optical characteristics affected by an acoustic wave in the substrate, and a Z-cut lithium tantalate transducer coupled to the substrate for inducing the acoustic wave. Lithium tantalate pr... | 12/18/1990 |
| 4975922 | Multi-layered dielectric film A multi-layered dielectric film that is coated on the end surfaces or other surfaces of optical products, wherein said multi-layered dielectric film is composed of alternate layers consisting of two kinds of dielectric layer, one of which is a first diele... | 12/04/1990 |
| 4974231 | Visible light semiconductor laser In a visible light semiconductor laser with (Alx Ga1-x)0.5 In0.5 P (0ࣘx ࣘ1) crystal layers and a process for growing an(Alx Ga1-x)0.5 In0.5 P (0ࣘxࣘ1) crystal, ... | 11/27/1990 |
| 4972352 | Semiconductors lasers A method and circuit for generating controlled light signals from electronic data signals in a semi-conductor laser transmitter of the type having a stimulated emission cavity with at least two electrical input contacts determining corresponding separate ... | 11/20/1990 |
| 4969156 | Laser cavity having an adjustable optical path length extender A laser is disclosed which includes an optical path length extender for increasing the optical path length of the laser cavity. The path length extender, which is disposed inside the laser cavity itself, includes a set of three curved mirrors each having ... | 11/06/1990 |
| 4969151 | Semiconductor laser devices Carrier injection layers are formed on an Alx Ga1-x As clad layer of high resistance by embedding and re-growth with the use of crystal growth processes such as MO-VPE or MO-MBE where material supply sources are all provided by gas s... | 11/06/1990 |
| 4965806 | Semiconductor laser devices having lateral refractive index tailoring A broad-area semiconductor laser diode includes an active lasing region interposed between an upper and a lower cladding layer, the laser diode further comprising structure for controllably varying a lateral refractive index profile of the diode to substa... | 10/23/1990 |
| 4964135 | Semiconductor laser A semiconductor laser includes a first cladding layer having a forward mesa with at least one end at least partially spaced from the adjacent facet of the laser. A current blocking layer buries the mesa at its sides and at least partially at the ends of t... | 10/16/1990 |
| 4964132 | Laser arrangement with frequency stabilized and intensity stabilized laser emission In a laser in which two longitudinal modes of a laser emission are excited, high frequency stability and intensity stability of the laser emission are achieved in that the dimensioning of the laser is used to produce a coupling of the intensities of the t... | 10/16/1990 |
| 4961199 | Methods for reducing the loss of metal in a metal vapor laser Methods are provided for reducing loss of metal from a metal vapor laser by collecting metal present outside the hot zone of the laser and introducing or confining it in the hot zone.... | 10/02/1990 |
| 4961196 | Semiconductor laser A semiconductor laser comprises an active layer of a quantum well structure, and a current confinement structure for avoiding the injection of carriers into regions of the active layer in the vicinities of resonator facets. The current confinement structu... | 10/02/1990 |
| 4961197 | Semiconductor laser device A high-power low-noise semiconductor laser device required for light sources for an erasable optical disc is a self-sustained pulsating semiconductor laser device in which an MQW structure is used for an active layer, and thus a kink output power and a li... | 10/02/1990 |
| 4961200 | Process and generator for generating atomic iodine in the fundamental state, and iodine chemical laser employing such An iodine chemical laser is disclosed comprising: a laser cavity; a combustion chamber; a first injector injecting into said combustion chamber an iodine compound as a fuel; a first supply means for supplying the fuel to said first injector; a second inje... | 10/02/1990 |
| 4959839 | Rib waveguide type semiconductor laser A rib waveguide type semiconductor laser including p-type high impurity concentration layer formed between a p-upper cladding layer and p-ohmic layer and having an impurity concentration higher than the impurity concentration of the p-upper cladding layer... | 09/25/1990 |
| 4959840 | Compact excimer laser including an electrode mounted in insulating relationship to wall of the laser A compact excimer laser, including a housing structure having a plurality of walls forming an internal laser cavity. A gas is located within the laser cavity and with the gas capable of lasing action. A pair of spaced electrodes are located within the las... | 09/25/1990 |
| 4958354 | Apparatus for stabilizing the intensity of light A light intensity stabilizing apparatus comprises an optical amplifier such as a non-resonant traveling-wave type optical amplifier, whose gain is adjustable by a controlling electrical signal and which amplifies incident light emitted from a light source... | 09/18/1990 |
| 4958355 | High performance angled stripe superluminescent diode There is provided a super luminescent light emitting device comprising a semiconductor body including a central region and two opposing end regions extending a predetermined distance from the end faces. A gain guiding linear strip of material adjacent to ... | 09/18/1990 |
| 4956847 | Electrodes for a gas laser apparatus and method of making the same In a gas laser, the surface of either or both of discharge electrodes are formed from titanium oxide which provides fine sputtering proof. The discharge electrodes are formed from titanium as a base material having an oxidized surface. Alternatively, the ... | 09/11/1990 |
| 4955725 | Laser oscillator/amplifier with compensation for stress birefringence A laser oscillator/amplifier system in which thermally induced birefringence in the gain media of the oscillator is compensated by thermally induced birefringence in the gain media of the amplifier. The system produces a quality output beam efficiently an... | 09/11/1990 |
| 4956848 | Electrodes for gas apparatus and method of making the same In a gas laser, an anode of discharge electrodes is formed from stainless steel. Alternatively, the anode is formed from a metallic base material and chromium coating is applied on the surface of the metallic base material. A cathode is formed from titani... | 09/11/1990 |
| 4954971 | Bidimensional laser array with two groups of active regions A semiconductor diode laser array, in which the active regions (3) are arranged in at least two groups, which are located in (two) substantially equidistant planes (V and W). At least one of the groups should comprise at least two active regions. Accordin... | 09/04/1990 |
| 4955036 | Semiconductor arrangement for producing a periodic refractive index distribution and/or a periodic gain distribution A device for the amplification of light including a periodic semiconductor structure composed of different layers extending in the propagation direction of the optical wave. The periodic structure is constructed of a series connection of at least two semi... | 09/04/1990 |
| 4955033 | Metal vapor laser apparatus Metal vapor laser apparatus includes an envelope within which is contained electrodes and a plurality of cylindrical copper segments arranged between them. During operation of the laser, bromine and helium buffer gas are arranged to flow through the envel... | 09/04/1990 |
| 4955034 | Planar solid state laser resonator A planar unidirectional solid state laser is realized in non-birefringent (isotropic or cubic) material by inducing a reciprocal polarization rotation along a lasing path within the material through a mechanical stress or by modifying the material to chan... | 09/04/1990 |
| 4953176 | Angular optical cavity alignment adjustment utilizing variable distribution cooling Misalignment of a laser beam due to bending of a plasma tube for an internal resonator ion laser, or another structural element supporting beam guiding optics, is controlled by varying the distribution of heat flow out of the plasma tube or structural ele... | 08/28/1990 |
| 4951294 | Diode pumped modelocked solid state laser In a three-mirror optical resonator, solid state laser, the gain member is a thin slab, such as Nd:glass, disposed at Brewsters angle to minimize insertion loss. The gain slab is disposed at a beam waist in a confocal arm of the optical resonator. Optical... | 08/21/1990 |
| 4951293 | Frequency doubled laser apparatus A visible laser source comprises a sub mount. A semiconductor laser located on the sub mount has an active layer formed at a surface of the semiconductor laser. The active-layer formed surface of the semiconductor laser opposes the sub mount. An optical n... | 08/21/1990 |
| 4951285 | Laser with adjustable mirror for mode control A laser comprising a first mirror having a shape. The shape is generally spherical for typical lasers with the shape of the mirror being defined by the radius of curvature of a reflective surface on the mirror. A second mirror is provided mounted with the... | 08/21/1990 |
| 4951291 | Semiconductor laser device with a protective film on the facets A semiconductor laser device with a protective film on the facets, wherein said protective film is made of a multi-layered dielectric film composed of alternate layers consisting of at least two kinds of dielectric film, one of which is a first dielectric... | 08/21/1990 |
| 4951290 | Semiconductor laser device A semiconductor laser device comprising an active layer that constitutes a laser-oscillating resonator, and an inner-striped channel in the resonating direction, light from the active layer being absorbed at both edges of the striped channel, resulting in... | 08/21/1990 |
| 4951292 | Coating for DFB/DBR laser diodes In DFB/DBR semiconductor diode lasers, competition may arise between the DFB (Distributed Feed-Back) mode corresponding to the period of the grid present and the FP (=Fabry-Perot) mode determined by the relative distance of the mirror surfaces, as a resul... | 08/21/1990 |
| 4949354 | Laser apparatus having a discharge triggering device inside a laser tube Laser apparatus includes a gas filled tube and is arranged to act as a switch to trigger, within the tube itself, a discharge. The power dissipated in the discharge is applied to material which forms, or is to form, a laser amplifying medium, to provide p... | 08/14/1990 |
| 4949352 | Laser manufacture A ridge waveguide laser structure is manufactured by a method including providing a photoresist stripe (8) on an exposed area of a p cap layer (4) of a multilayer laser wafer; etching channels (9) through the cap layer (4) and a p passive layer (3) using ... | 08/14/1990 |
| 4949346 | Conductively cooled, diode-pumped solid-state slab laser A conductively cooled, optically diode-pumped slab laser comprises a slab laser host 1 having transparent, thermally conductive heat sink means 2 bonded to its pump faces. Semiconductor lasers or light emitting diodes 3 are mounted on the heat sink means ... | 08/14/1990 |
| 4949350 | Surface emitting semiconductor laser A vertical-cavity surface emitting laser and method of making in which a III-V heterostructure is epitaxially grown to include a quantum well active region between two interference mirrors separated by an emitting wavelength of the quantum well region. A ... | 08/14/1990 |
| 4949351 | Surface-emitting semiconductor laser and manufacturing method of same A surface-emitting semiconductor laser having a lower reflection mirror including a semiconductor multilayer disposed on an n-type substrate so as to form an upper reflection mirror with TiPtAu such that a double heterojunction between the lower and upper... | 08/14/1990 |
