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| 7455731 | Polycrystalline silicon rod and method for processing the same |
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| 7449065 | Method for the growth of large low-defect single crystals |
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| 7449064 | Method for producing AlN single crystal and AlN single crystal |
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| 7442355 | Indium phosphide substrate and indium phosphide monocrystal and m... |
| 7442255 | Crucible for a device for producing a block of crystalline materi... |
| 7442253 | Process for forming low defect density, ideal oxygen precipitatin... |
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| 7435296 | Diamond bodies grown on SiC substrates and associated methods |
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| 7435397 | System for performing crystallization trials |
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| 7431769 | Method for performing crystallization trials |
| 7431768 | System for performing crystallization trials |
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| 7427327 | Silica glass crucible with barium-doped inner wall |
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| 7427326 | Minimizing degradation of SiC bipolar semiconductor devices |
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| 7419545 | Method for producing silicon carbide (SiC) single crystal and sil... |
| 7419547 | Method for marking a crystalline material using cathodoluminescen... |
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| 7416710 | Method and system for performing crystallization trials |
| 7416709 | Method for performing crystallization trials |
| 7416604 | Nitride crystal, nitride crystal substrate, epilayer-containing n... |
| 7416606 | Method of forming a layer of silicon carbide on a silicon wafer |
| 7416605 | Anneal of epitaxial layer in a semiconductor device |
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