Did You Know...
...that it was melting ice cream that inspired the invention of the outboard motor? It was a lovely August day and Ole Evinrude was rowing his boat to his favorite island picnic spot. As he rowed, he watched his ice cream melt and wished he had a faster way to get to the island. At that moment the idea for the outboard motor was born!
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| Number | Title | Issue Date |
| 8188560 | Optical color sensor system An optical color sensor system is provided including providing a substrate having an optical sensor therein and forming a passivation layer over the substrate. The passivation layer is planarized and color filters are formed over the passivation layer. A planar tran... | 05/29/2012 |
| 8188530 | Nonvolatile semiconductor memory device and method for manufacturing same A semiconductor memory device provided with a cell array section and a peripheral circuit section, the device includes: a back gate electrode; a stacked body provided on the back gate electrode; a plurality of semiconductor pillars extending in a stacking direction;... | 05/29/2012 |
| 8187102 | Gaming system obtaining time-of-day data from a plurality of terminals and providing games matching customer preferences at respective times-of-day A gaming system 10, composed of a server 11 and a plurality of gaming terminals 13, submits selection information including a game type to be executed in a gaming terminal 13 and a picture type, selected by a player in the gaming terminal... | 05/29/2012 |
| 8188521 | Power semiconductor device A power semiconductor device has semiconductor layers, including: first layer of first type; second and third layers respectively of first and second types alternately on the first layer; fourth layers of second type on the third layers; fifth layers of first type o... | 05/29/2012 |
| 8187093 | Game sound output device, game sound control method, information recording medium, and program An overlap identifying unit (205) obtains respective directions of the sound emitting objects with respect to the hearing position and identifies each one of sound emitting objects whose directions overlap. A sound volume estimation unit (206) estimate... | 05/29/2012 |
| 8187081 | Gaming system and a method of gaming A gaming system is disclosed which comprises a symbol selector arranged to select a plurality of symbols for display at a corresponding plurality of display positions, an outcome evaluator arranged to determine whether the selected symbols correspond to a winning sy... | 05/29/2012 |
| 8183597 | GaN semiconductor device having a high withstand voltage A GaN semiconductor device which has a low on-resistance, has a very small leak current when a reverse bias voltage is applied and is very excellent in withstand voltage characteristic, said GaN semiconductor device having a structure being provided with a III-V nit... | 05/22/2012 |
| 8183093 | Method of manufacturing a semiconductor device by lamination A wiring circuit layer 2 having at least a wiring part and an insulating part, whose top and bottom surfaces (20A, 20B) is adhesive surfaces, is formed on a metal support substrate 1 in a way such that the layer 2 can be peeled fro... | 05/22/2012 |
| 8182333 | Wagering game with auto-triggered player device A gaming system including an input device for receiving a wager to play a wagering game. The gaming system also includes a display for displaying a randomly selected outcome of the wagering game and a touch-screen input device in association with the display. In res... | 05/22/2012 |
| 8183107 | Semiconductor devices with improved local matching and end resistance of RX based resistors Semiconductor devices are formed with reduced variability between close proximity resistors, improved end resistances, and reduced random dopant mismatch. Embodiments include ion implanting a dopant, such as B, at a relatively high dosage, e.g. about 4 to about 6 ke... | 05/22/2012 |
| 8183690 | Electronic device An electronic device including: a semiconductor chip on which an integrated circuit is formed; an electrode formed on the semiconductor chip and electrically connected to the integrated circuit; a resin protrusion disposed on the semiconductor chip; an interconnect ... | 05/22/2012 |
| 8182331 | Gaming machine A gaming machine executes a second game based on game results of a first game. The second game is a game that awards a prize corresponding to an option a player selects from a plurality of options. In the second game, based on speech input by the player, the gaming ... | 05/22/2012 |
| 8183595 | Normally off III-nitride semiconductor device having a programmable gate A III-nitride semiconductor device which includes a charged gate insulation body. ... | 05/22/2012 |
| 8183128 | Method of reducing roughness of a thick insulating layer A method for reducing roughness of an exposed surface of an insulator layer on a substrate, by depositing an insulator layer on a substrate wherein the insulator layer includes an exposed rough surface opposite the substrate, and then smoothing the exposed rough sur... | 05/22/2012 |
| 8183658 | Field-effect transistor (FET) with embedded diode A Field-Effect Transistor (FET) is provided that includes a first portion and a second portion separated from the first portion by a gap. The FET further includes at least one diode embedded within the gap between the first and second portions. A plurality of FETs a... | 05/22/2012 |
| 8183552 | Semiconductor memory device A semiconductor memory device having a first wiring layer which is provided on a first insulator, and which extends in a first direction, and a non-volatile memory cell which is provided in a pillar shape on the first wiring layer, and which includes a non-ohmic ele... | 05/22/2012 |
| 8183115 | Method of manufacturing a semiconductor device having elevated layers of differing thickness There is provided an SOI-MISFET including: an SOI layer; a gate electrode provided on the SOI layer interposing a gate insulator; and a first elevated layer provided higher in height from the SOI layer than the gate electrode at both sidewall sides of the gate elect... | 05/22/2012 |
| 8178945 | Programmable PN anti-fuse Structure and method for providing a programmable anti-fuse in a FET structure. A method of forming the programmable anti-fuse includes: providing a p− substrate with an n+ gate stack; implanting an n+ source region and an n+ drain region in the p− substrate; fo... | 05/15/2012 |
| 8178376 | Method for fabricating LED chip comprising reduced mask count and lift-off processing A method for fabricating a light emitting diode chip is provided. In the method, a half-tone mask process, a gray-tone mask process or a multi-tone mask process is applied and combined with a lift-off process to further reduce process steps of the light emitting dio... | 05/15/2012 |
| 8178377 | Method for fabricating lED chip comprising reduced mask count A method for fabricating a light emitting diode chip is provided. In the method, a half-tone mask process, a gray-tone mask process or a multi-tone mask process is applied and combined with a lift-off process to further reduce process steps of the light emitting dio... | 05/15/2012 |
| 8178942 | Electrically alterable circuit for use in an integrated circuit device An electrically alterable circuit (EAC), suitable for use in an integrated circuit, includes a first interconnect, a link element, and a second interconnect. A first set of interconnect vias provides an electrically conductive connection between the first interconne... | 05/15/2012 |
| 8173465 | Method for fabricating LED chip comprising reduced mask count and lift-off processing A method for fabricating a light emitting diode chip is provided. In the method, a half-tone mask process, a gray-tone mask process or a multi-tone mask process is applied and combined with a lift-off process to further reduce process steps of the light emitting dio... | 05/08/2012 |
| 8173466 | Method for fabricating LED chip comprising reduced mask count and lift-off processing A method for fabricating a light emitting diode chip is provided. In the method, a half-tone mask process, a gray-tone mask process or a multi-tone mask process is applied and combined with a lift-off process to further reduce process steps of the light emitting dio... | 05/08/2012 |
| 8173467 | Method for fabricating LED chip comprising reduced mask count and lift-off processing A method for fabricating a light emitting diode chip is provided. In the method, a half-tone mask process, a gray-tone mask process or a multi-tone mask process is applied and combined with a lift-off process to further reduce process steps of the light emitting dio... | 05/08/2012 |
| 8172677 | Wagering games using multi-level gaming structure According to one aspect of the present invention, a gaming system is disclosed including at least one community display and a plurality of personal media terminals. The at least one community display is adapted to display a community event thereon. The plurality of ... | 05/08/2012 |
| 8174118 | Detection device and method for manufacturing the same A method for manufacturing a detection device includes the steps of providing bonding bumps on at least one of a light-receiving element array and a read-out circuit multiplexer, fixing a bump height adjusting member for adjusting the heights of the bumps to the lig... | 05/08/2012 |
| 8173468 | Method for fabricating LED chip comprising reduced mask count and lift-off processing A method for fabricating a light emitting diode chip is provided. In the method, a half-tone mask process, a gray-tone mask process or a multi-tone mask process is applied and combined with a lift-off process to further reduce process steps of the light emitting dio... | 05/08/2012 |
| 8174115 | Multi-chip package memory device Provided is a multi-chip package memory device. The multi-chip package memory device may include a transmission memory chip and a plurality of memory chips that are stacked on the transmission memory chip. The transmission memory chip may include a temporary storage... | 05/08/2012 |
| 8174053 | Semiconductor device, production method thereof, and electronic device The present invention provides a semiconductor device which includes a thin film transistor as a resistance element, wherein a variation in resistance of the thin film transistor is suppressed without increasing an area of the resistance element and the resistance e... | 05/08/2012 |
| 8172679 | Gaming Machine In a gaming table (1), image light L1 emitted from a display surface of a liquid crystal module (2) that carries out a dual image display arrives, directly through a window of a frame (4b), at a player in front of the gaming table.... | 05/08/2012 |
| 8168994 | Light emitting diode comprising semiconductor nanocrystal complexes A light emitting diode (LED) formed by depositing an LED chip and coupling a stability layer to the LED chip. Semiconductor nanocrystals are placed in a first matrix material to form a nanocrystal complex layer. The nanocrystal complex layer is deposited on top of t... | 05/01/2012 |
| 8168986 | GaN-based semiconductor light-emitting element, light-emitting element assembly, light-emitting apparatus, method of driving GaN-based semiconductor light-emitting element, and image display apparatus A GaN-based semiconductor light-emitting element is provided and includes a first GaN-based compound semiconductor layer; an active layer having a multi-quantum well structure; and a second GaN-based compound semiconductor layer. At least one of barrier layers const... | 05/01/2012 |
| 8169004 | Compound semiconductor epitaxial substrate and process for producing the same A compound semiconductor epitaxial substrate and a process for producing the same are provided. The compound semiconductor epitaxial substrate comprises a single crystal substrate, a lattice mismatch compound semiconductor layer and a stress compensation layer, wher... | 05/01/2012 |
| 8169040 | Semiconductor device and method for manufacturing the same A semiconductor device includes: an n-channel MIS transistor and a p-channel MIS transistor. An n-channel MIS transistor includes: a first gate insulating film having an amorphous layer or an epitaxial layer formed on a p-type semiconductor region between a first so... | 05/01/2012 |
| 8167698 | Determining the orientation of an object placed on a surface A touch screen includes light emitters and light detectors arranged around a periphery thereof. The position, orientation, shape and/or size of objects may be determined by switching the light emitters on one-by-one and detecting shadows caused by the objects. The o... | 05/01/2012 |
| 8169029 | High voltage device with constant current source and manufacturing method thereof A high voltage device with constant current source and the manufacturing method thereof. The device includes a P type silicon substrate (1), an oxide layer (6), a drain metal (2), a source metal (3), a gate metal (4), a P+substrate... | 05/01/2012 |
| 8169088 | Power converter integrated circuit floor plan and package For a DC to DC converter circuit integrated on a packaged die, the relative positions of various die pads and power MOSFETs on the die for a small outline integrated circuit package are described. ... | 05/01/2012 |
| 8169084 | Bond pad structure and method for producing same It is described a bond pad structure and a method for producing the same, the bond pad structure (1), comprising: a substrate (3) having a surface (17) to be electrically contacted; a first isolator layer (5) contacting the surface (17... | 05/01/2012 |
| 8168496 | Single die output power stage using trench-gate low-side and LDMOS high-side MOSFETS, structure and method A voltage converter includes an output circuit having a high-side device and a low-side device which can be formed on a single die (a “PowerDie”). The high-side device can include a lateral diffused metal oxide semiconductor (LDMOS) while the low-side device can... | 05/01/2012 |
| 8168480 | Fabricating method for forming integrated structure of IGBT and diode An integrated structure of an IGBT and a diode includes a plurality of doped cathode regions, and a method of forming the same is provided. The doped cathode regions are stacked in a semiconductor substrate, overlapping and contacting with each other. As compared wi... | 05/01/2012 |
