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...that to encourage use of his new invention, the shopping cart, market owner Sylvan Goldman hired fake shoppers to push the carts around his store in Oklahoma City? Seems his customers were reluctant to give up their hand-carried baskets.
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| Number | Title | Issue Date |
| 7440986 | Method for estimating storage requirements for a multi-dimensional clustering data configuration A storage requirements estimating system estimates the storage required for a proposed multidimensional clustering data by modeling wasted space. The amount of wasted space is modeled by calculating the cardinality of the unique value of the clustering key for the p... | 10/21/2008 |
| 7087493 | Memory with 6T small aspect ratio cells having metal1 elements physically connected to metal0 elements A method of forming a memory circuit comprising six transistor memory cells. The memory cells comprise first and second inverters. The inverters comprise respective first and second drive transistors and first and second pull-up transistors. The method also forms a ... | 08/08/2006 |
| 7071073 | Process for manufacturing low-cost and high-quality SOI substrates For manufacturing an SOI substrate, the following steps are carried out: providing a wafer of semiconductor material; forming, inside the wafer, a plurality of passages forming a labyrinthine cavity and laterally delimiting a plurality of pillars of semiconductor ma... | 07/04/2006 |
| 7067428 | Method for cleaning polysilicon A method for cleaning polysilicon comprises steps of cleaning solid or granular polysilicon with an aqueous solution of dissolved ozone, and of cleaning with hydrofluoric acid the polysilicon receiving the above cleaning based on an aqueous solution of dissolved ozo... | 06/27/2006 |
| 7026681 | Flash memory device and fabrication process thereof, method of forming a dielectric film A fabrication process of a flash memory device includes microwave excitation of high-density plasma in a mixed gas of Kr and an oxidizing gas or a nitriding gas. The resultant atomic state oxygen O* or hydrogen nitride radicals NH* are used for nitridation or oxidat... | 04/11/2006 |
| 7005350 | Method for fabricating programmable memory array structures incorporating series-connected transistor strings A three-dimensional flash memory array incorporates thin film transistors having a charge storage dielectric arranged in series-connected NAND strings to achieve a 4F2 memory cell layout. The memory array may be programmed and erased using only tunneling ... | 02/28/2006 |
| 7001855 | Flash memory device and fabrication process thereof, method of forming a dielectric film A fabrication process of a flash memory device includes microwave excitation of high-density plasma in a mixed gas of Kr and an oxidizing gas or a nitriding gas. The resultant atomic state oxygen O* or hydrogen nitride radicals NH* are used for nitridation or oxidat... | 02/21/2006 |
| 6998355 | Flash memory device and a fabrication process thereof, method of forming a dielectric film A fabrication process of a flash memory device includes microwave excitation of high-density plasma in a mixed gas of Kr and an oxidizing gas or a nitriding gas. The resultant atomic state oxygen O* or hydrogen nitride radicals NH* are used for nitridation or oxidat... | 02/14/2006 |
| 6962881 | Method for fabricating semiconductor integrated circuit device A method for fabricating a semiconductor integrated circuit device of the invention comprises feeding oxidation species containing a low concentration of water, which is generated from hydrogen and oxygen by the catalytic action, to the main surface of or in the vic... | 11/08/2005 |
| 6960539 | Substrate for electronic devices, manufacturing method therefor, and electronic device There is provided a substrate for electronic devices, in which treatment for forming a reconstructed surface or a hydrogen-terminated surface on a substrate is not necessary, and a buffer layer formed on the substrate can be epitaxially grown in the (100) orientatio... | 11/01/2005 |
| 6955940 | Method of forming chalcogenide comprising devices A method of forming a non-volatile resistance variable device includes forming a first conductive electrode material on a substrate. A metal doped chalcogenide comprising material is formed over the first conductive electrode material. Such comprises the metal and A... | 10/18/2005 |
| 6939733 | Group III nitride compound semiconductor device and method of producing the same A first group III nitride compound layer, which is formed on a substrate by a method not using metal organic compounds as raw materials, is heated in an atmosphere of a mixture gas containing a hydrogen or nitrogen gas and an ammonia gas, so that the crystallinity o... | 09/06/2005 |
| 6924212 | Method for forming a semiconductor A preparing method of a semiconductor, particularly a preparing method of a polycrystal semiconductor film which has a good electrical property is disclosed. In order to obtain a non-crystalline silicon film containing a lot of combination of hydrogen and silicon, a... | 08/02/2005 |
| 6916733 | Method for fabricating contact pad of semiconductor device The method forming a contact pad of a semiconductor device, including forming a plurality of conductive layer patterns displaced on a silicon substrate with adjoining to each other; forming an insulating layer on a top of the conductive layer patterns; depositing a ... | 07/12/2005 |
| 6908804 | Bipolar transistor, semiconductor device and method of manufacturing same The bipolar transistor comprises a collector region (1) of a semiconductor material having a first doping type, a base region (2) of a semiconductor material having a second doping type, and an emitter region (3) having the first doping type. A ... | 06/21/2005 |
| 6908818 | Contactless channel write/erase flash memory cell and its fabrication method A contactless channel write/erase flash memory cell structure and its fabricating method for increasing the level of integration is disclosed. The present invention utilizes a buried diffusion method to form an N+-doped region that acts as a drain of the ... | 06/21/2005 |
| 6905934 | Semiconductor device and a method of manufacturing the same The invention provides a bipolar transistor with improved performance. An insulation film comprising a silicon oxide film is formed by means of oxidation treatment on the side surface of an emitter aperture, and then an epitaxial layer comprised of SiGe is grown sel... | 06/14/2005 |
| 6905965 | Reactive preclean prior to metallization for sub-quarter micron application The present invention generally provides a precleaning process prior to metallization for submicron features on substrates. The method includes cleaning the submicron features with radicals from a plasma of a reactive gas such as oxygen, a mixture of CF4/... | 06/14/2005 |
| 6893906 | Electro-optical device and driving method for the same A display and a driving method for the same capable of constructing clear visual images is described. In the display, a plurality of conductive pads are opposed to a back electrode with a light influencing medium such as a liquid crystal layer. Control signals are s... | 05/17/2005 |
| 6884644 | Low temperature formation of backside ohmic contacts for vertical devices The invention comprises a method for forming a metal-semiconductor ohmic contact (18) for use in a semiconductor device (10) having a plurality of epitaxial layers (14a-c) wherein the ohmic contact (18) is preferably formed after d... | 04/26/2005 |
| 6872970 | Photoresponsive devices A method of preparing an efficient photoresponsive device includes the steps of providing a first electrode on a substrate, providing a layer of an organic material including a blend of at least two semiconductive polymers having different electrode affinities and/o... | 03/29/2005 |
| 6872613 | Method for integrating metals having different work functions to form CMOS gates having a high-k gate dielectric and related structure According to one exemplary embodiment, a method for integrating first and second metal layers on a substrate to form a dual metal NMOS gate and PMOS gate comprises depositing a dielectric layer over an NMOS region and a PMOS region of the substrate. The method furth... | 03/29/2005 |
| 6873039 | Methods of making microelectronic packages including electrically and/or thermally conductive element A method of manufacturing a plurality of microelectronic packages including electrically and/or thermally conductive elements. The method includes providing a support structure having a plurality of protrusions and depressions extending outwardly from the support. A... | 03/29/2005 |
| 6861375 | Method of fabricating semiconductor device A silicon oxynitride film is formed on a substrate. Then, a heat treatment is performed, while keeping a surface of the silicon oxynitride film in contact with a gas containing nitrogen, such as an NO gas, to introduce at least nitrogen into the silicon oxynitride f... | 03/01/2005 |
| 6858499 | Method for fabrication of MOSFET with buried gate An insulation is formed on a substrate of a material having a first conductivity type. A gate material is formed on the insulation. A portion of the gate material is removed thereby creating forming mesa type gate structures from remaining positions of the gate mate... | 02/22/2005 |
| 6855616 | Methods for manufacturing semiconductor devices A method of producing a semiconductor device, wherein after a trench is formed on a field region of a semiconductor substrate, an adsorption reaction of TEOS and a decomposition/recomposition reaction of TEOS using as a catalyst oxygen atoms decomposed from O3 ... | 02/15/2005 |
| 6855582 | FinFET gate formation using reverse trim and oxide polish A method of forming a gate electrode for a fin field effect transistor (FinFET) is provided. The method includes forming a fin on a substrate and forming an oxide layer over the fin. The method further includes forming a trench in the oxide layer, the trench crossin... | 02/15/2005 |
| 6852593 | Haze-free BST films Described herein is a method for producing a haze-free (Ba, Sr)TiO3 (BST) film, and devices incorporating the same. In one embodiment, the BST film is made haze-free by depositing the film with a substantially uniform desired crystal orientation, for exam... | 02/08/2005 |
| 6852555 | Method in the fabrication of organic thin-film semiconducting devices In a method in the fabrication of an organic thin-film semiconducting device comprising an electrode arrangement with electrodes contacting a semiconducting organic material, an anode in the electrode arrangement is made as a two-layer structure, where the first lay... | 02/08/2005 |
| 6849475 | Thin film resonator and method for manufacturing the same A thin film resonator having enhanced performance and a manufacturing method thereof are disclosed. The thin film resonator includes a supporting means, a first electrode, a dielectric layer and a second electrode. The supporting means has several posts and a suppor... | 02/01/2005 |
| 6849471 | Barrier layers for microelectromechanical systems A method for processing microelectromechanical devices is disclosed herein. The method prevents the diffusion and interaction between sacrificial layers and structure layers of the microelectromechanical devices by providing selected barrier layers between consecuti... | 02/01/2005 |
| 6849564 | 1R1D R-RAM array with floating p-well A low-capacitance one-resistor/one-diode (1R1D) R-RAM array with a floating p-well is provided. The fabrication method comprises: forming an integrated circuit (IC) substrate; forming an n-doped buried layer (buried n layer) of silicon overlying the substrate; formi... | 02/01/2005 |
| 6849539 | Semiconductor device and method of fabricating the same A method for simply forming a miniature contact hole in a self-aligned manner with a wiring layer. A gate insulating film, a gate electrode, and a protective insulating layer are formed on the surface of a silicon substrate, and a blanket insulating film is deposite... | 02/01/2005 |
| 6846753 | Flash memory device and a fabrication process thereof, method of forming a dielectric film A fabrication process of a flash memory device includes microwave excitation of high-density plasma in a mixed gas of Kr and an oxidizing gas or a nitriding gas. The resultant atomic state oxygen O* or hydrogen nitride radicals NH* are used for nitridation or oxidat... | 01/25/2005 |
| 6841446 | Fabrication method for a flash memory device In a fabrication method of a flash memory device, a first oxide layer is formed on the substrate in the memory cell region and in the peripheral circuit region. A first conductive layer is formed and defined to form a plurality of floating gates in the memory cell r... | 01/11/2005 |
| 6838394 | Flash memory device and a fabrication process thereof, method of forming a dielectric film A fabrication process of a flash memory device includes microwave excitation of high-density plasma in a mixed gas of Kr and an oxidizing gas or a nitriding gas. The resultant atomic state oxygen O* or hydrogen nitride radicals NH* are used for nitridation or oxidat... | 01/04/2005 |
| 6838733 | Semiconductor device and fabrication method with etch stop film below active layer A semiconductor device includes a semiconductor layer formed on part of an insulating layer. The semiconductor layer includes a diffusion region and a channel region. The insulating layer is etched so that the semiconductor layer is separated from the insulating lay... | 01/04/2005 |
| 6835587 | Single crystal, tunneling and capacitive, three-axes sensor using eutectic bonding and a method of making same A first axis MEM tunneling/capacitive sensor and method of making same. Cantilever beam structures for at least two orthogonally arranged sensors and associated mating structures are defined on a first substrate or wafer, the at least two orthogonally arrange sensor... | 12/28/2004 |
| 6835602 | Coils integrated in IC-package Method for providing at least one inductance associated with a chip attached to a support, in which said inductances are provided by means of at least a first bondwire having first and second ends. In which method said first end of said first bondwire is bonded to a... | 12/28/2004 |
| 6833576 | Methods for forming and integrated circuit structures containing ruthenium and tungsten containing layers Capacitors having increased capacitance include an enhanced-surface-area (rough-surfaced) electrically conductive layer or other layers that are compatible with the high-dielectric constant materials. In one approach, an enhanced-surface-area electrically conductive... | 12/21/2004 |
