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| Application No. | Application Title | Issue Date |
| 20120128018 | Interband Cascade Lasers A gain medium and an interband cascade laser, having the gain medium are presented. The gain medium can have one or both of the following features: (1) the thicknesses of the one or more hole quantum wells in the hole injector region are reduced commensurate with the th... | 05/24/2012 |
| 20120039350 | HIGH POWER, HIGH EFFICIENCY QUANTUM CASCADE LASERS WITH REDUCED ELECTRON LEAKAGE Semiconductor structures and laser devices including the semiconductor structures are provided. The semiconductor structures have a quantum cascade laser (QCL) structure including an electron injector, an active region, and an electron extractor. The active region of th... | 02/16/2012 |
| 20120008660 | III-NITRIDE SEMICONDUCTOR LASER, AND METHOD FOR FABRICATING III-NITRIDE SEMICONDUCTOR LASER Provided is a III-nitride semiconductor laser allowing for provision of a low threshold with use of a semipolar plane. A primary surface 13a of a semiconductor substrate 13 is inclined at an angle of inclination AOFF in the range of not l... | 01/12/2012 |
| 20110310915 | METHODS AND APPARATUS FOR SINGLE-MODE SELECTION IN QUANTUM CASCADE LASERS Methods and apparatus for improved single-mode selection in a quantum cascade laser. In one example, a distributed feedback grating incorporates both index-coupling and loss-coupling components. The loss-coupling component facilitates selection of one mode from two poss... | 12/22/2011 |
| 20110313407 | QUANTUM-DOT LASER DIODE Aspects of the present disclosure relate to the field of laser technology, specifically semiconductor lasers, and to novel biomedical applications of such lasers, including novel methods of photodynamic therapy. Exemplary embodiments of the present disclosure include a ... | 12/22/2011 |
| 20110310920 | EPITAXIAL GROWTH OF IN-PLANE NANOWIRES AND NANOWIRE DEVICES Exemplary embodiments provide semiconductor nanowires and nanowire devices/applications and methods for their formation. In embodiments, in-plane nanowires can be epitaxially grown on a patterned substrate, which are more favorable than vertical ones for device processi... | 12/22/2011 |
| 20110292958 | ENHANCED PLANARITY IN GaN EDGE EMITTING LASERS A GaN edge emitting laser is provided comprising a semi-polar GaN substrate, an active region, an N-side waveguiding layer, a P-side waveguiding layer, an N-type cladding layer, and a P-type cladding layer. The GaN substrate defines a 20 | 12/01/2011 |
| 20110292957 | GAN-BASED LASER DIODES WITH MISFIT DISLOCATIONS DISPLACED FROM THE ACTIVE REGION A GaN-based edge emitting laser is provided comprising a semi-polar GaN substrate, an active region, an N-side waveguiding layer, a P-side waveguiding layer, an N-type cladding layer, and a P-type cladding layer. The GaN substrate is characterized by a threading disloca... | 12/01/2011 |
| 20110210658 | LIGHT EMISSIVE CERAMIC LAMINATE AND METHOD OF MAKING SAME A ceramic composite laminate includes a wavelength-converting layer and a non-emissive layer, wherein the ceramic composite laminate has a wavelength conversion efficiency (WCE) of at least 0.650. The ceramic composite laminate can also include a wavelength-converting c... | 09/01/2011 |
| 20110170568 | SURFACE EMITTING SEMICONDUCTOR LASER A surface emitting semiconductor laser includes a substrate, an n-type lower DBR, an n-type cavity extending region formed on the lower DBR, an active region formed on the cavity extending region, and an upper DBR formed on the active region. A difference in refractive ... | 07/14/2011 |
| 20110164639 | Light emitting and lasing semiconductor devices and methods A two terminal semiconductor device for producing light emission in response to electrical signals, includes: a terminal-less semiconductor base region disposed between a semiconductor emitter region and a semiconductor collector region having a tunnel junction adjacent... | 07/07/2011 |
| 20110150018 | LASER DEVICE Provided is a laser device. In the laser device, an active layer is connected to a stem core of a 1×2 splitter on a substrate, a first diffraction grating is coupled to a first twig core of the 1×2 splitter, and a second diffraction grating is coupled to a second twig... | 06/23/2011 |
| 20110142088 | PHOTON PAIR SOURCE AND METHOD FOR ITS PRODUCTION The invention relates to a method for the production of a photon pair source, which generates entangled photon pairs, having at least one quantum dot, wherein in the method the operational behaviour of the photon pair source is determined by adjusting the fine structure... | 06/16/2011 |
| 20110080931 | CIRCULAR SEMICONDUCTOR LASERS HAVING LATTICES FOR VERTICAL EMISSION A semiconductor laser includes a laser resonator (1) having a planar active region (3), a first (2) and a second (6) wave-guide layer that define the active region (3). The resonator (1) has a shape that is defined by a perimete... | 04/07/2011 |
| 20110069724 | Optical fiber for sum-frequency generation The present invention embraces an optical fiber that includes a central core to transmit optical signals and an optical cladding surrounding the central core to confine transmitted optical signals. The optical fiber typically includes metallic nanostructures for increas... | 03/24/2011 |
| 20110064106 | SYSTEM AND METHOD FOR A MICRO RING LASER A system and method for an electrically pumped laser system is disclosed. The system includes a silicon micro-ring resonator 405. A quantum well 412 formed of a III-V group semiconductor material is optically coupled with the micro-ring resonator 405 | 03/17/2011 |
| 20110064100 | Growth Structures and Method for Forming Laser Diodes on or Off Cut Gallium and Nitrogen Containing Substrates An optical device having a structured active region configured for one or more selected wavelengths of light emissions and formed on an off-cut m-plane gallium and nitrogen containing substrate.... | 03/17/2011 |
| 20110064101 | Low Voltage Laser Diodes on Gallium and Nitrogen Containing Substrates A low voltage laser device having an active region configured for one or more selected wavelengths of light emissions.... | 03/17/2011 |
| 20110064103 | SEMIPOLAR NITRIDE-BASED DEVICES ON PARTIALLY OR FULLY RELAXED ALLOYS WITH MISFIT DISLOCATIONS AT THE HETEROINTERFACE A dislocation-free high quality template with relaxed lattice constant, fabricated by spatially restricting misfit dislocation(s) around heterointerfaces. This can be used as a template layer for high In composition devices. Specifically, the present invention prepares ... | 03/17/2011 |
| 20110058586 | NITRIDE SEMICONDUCTOR LASER A projection/recess structure is formed on a base substrate, and a layered structure of a nitride semiconductor laser is formed on the projection/recess structure. InGaN used for an active layer has an In intake efficiency and a growth rate that greatly vary with the pl... | 03/10/2011 |
| 20110032956 | WIDE TEMPERATURE RANGE (WiTR) OPERATING WAVELENGTH-NARROWED SEMICONDUCTOR LASER The present invention provides a wide temperature range (WiTR) operating wavelength-narrowed and wavelength-stabilized semiconductor laser having a wide bandwidth gain medium imbedded in a waveguide layer comprising a plurality of quantum dots or quantum wells wherein e... | 02/10/2011 |
| 20110007766 | STRUCTURE FOR IMPROVING THE MIRROR FACET CLEAVING YIELD OF (Ga,Al,In,B)N LASER DIODES GROWN ON NONPOLAR OR SEMIPOLAR (Ga,Al,In,B)N SUBSTRATES A structure for improving the mirror facet cleaving yield of (Ga,Al,In,B)N laser diodes grown on nonpolar or semipolar (Ga,Al,In,B)N substrates. The structure comprises a nonpolar or semipolar (Ga,Al,In,B)N laser diode including a waveguide core that provides sufficient... | 01/13/2011 |
| 20100322276 | GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD FOR FABRICATING GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE Provided is a group-III nitride semiconductor laser device with a laser cavity allowing for a low threshold current, on a semipolar surface of a support base in which the c-axis of a hexagonal group-III nitride is tilted toward the m-axis. First and second fractured fac... | 12/23/2010 |
| 20100316079 | SUB-WAVELENGTH GRATING INTEGRATED VCSEL A vertical cavity surface emitting laser (VCSEL) is described using a sub-wavelength grating (SWG) structure that has a very broad reflection spectrum and very high reflectivity. The grating comprises segments of high and low refractive index materials with an index dif... | 12/16/2010 |
| 20100290217 | STRAIN MODULATED NANOSTRUCTURES FOR OPTOELECTRONIC DEVICES AND ASSOCIATED SYSTEMS AND METHODS Strain modulated nanostructures for optoelectronic devices and associated systems and methods are disclosed. A semiconductor laser in accordance with one embodiment of the disclosure, for example, comprises an active region having a nanowire structure formed from a semi... | 11/18/2010 |
| 20100284433 | SEMICONDUCTOR LASER DEVICE AND DISPLAY A semiconductor laser device capable of easily obtaining a desired hue is obtained. This semiconductor laser device (100) includes a green semiconductor laser element (30) having one or a plurality of laser beam emitting portions, a blue semiconductor lase... | 11/11/2010 |
| 20100165356 | SEMICONDUCTOR OPTICAL ELEMENT A semiconductor optical element has an active layer including quantum dots. The density of quantum dots in the resonator direction in a portion of the active layer in which the density of photons is relatively high is increased relative to the density of quantum dots in... | 07/01/2010 |
| 20100142566 | Multi-band multiwavelength quantum dot mode-locked lasers A multi-band (multi-colour) multiwavelength mode locked laser diode is provided by dynamic phase compensation of a quantum dot active medium. The laser diode is provided with a PIN diode structure where the active medium consists of a plurality of layers of quantum dots... | 06/10/2010 |
| 20100098113 | Selective deposition of carbon nanotubes on optical fibers The specification describes a method for selectively depositing carbon nanotubes on the end face of an optical fiber. The end face of the optical fiber is exposed to a dispersion of carbon nanotubes while light is propagated through the optical fiber. Carbon nanotubes d... | 04/22/2010 |
| 20090296766 | QUANTUM DOT LASER DIODE AND METHOD OF MANUFACTURING THE SAME Provided are a quantum dot laser diode and a method of manufacturing the same. The method of manufacturing a quantum dot laser diode includes the steps of: forming a grating structure layer including a plurality of gratings on a substrate; forming a first lattice-matche... | 12/03/2009 |
| 20080227230 | Quantum dot vertical cavity surface emitting laser and fabrication method of the same A quantum dot vertical capacity surface emitting laser (QD-VCSEL) and a method of manufacturing the same are provided. The QD-VCSEL includes a substrate, a lower distributed brag reflector (DBR) mirror formed on the substrate, an electron transport layer (ETL) formed on... | 09/18/2008 |
| 20060274803 | Quantum well structure A quantum well structure according to the invention includes a quantum well layer (107) arranged between two barrier layers (109, 112). It is distinguished in that at least one of the barrier layers (109) includes nanostructures (110) which c... | 12/07/2006 |
