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| Application No. | Application Title | Issue Date |
| 20110180904 | GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR CLEANING THE SAME A Group-III nitride semiconductor substrate having a flat surface with a dangling bond density of higher than 14.0 nm−2 is produced by cleaning the surface having a dangling bond density of higher than 14.0 nm−2 with a cleaning agent containing... | 07/28/2011 |
| 20110182310 | NITRIDE SEMICONDUCTOR LASER DIODE AND MANUFACTURING METHOD THEREOF A nitride semiconductor laser diode includes a substrate of n-type GaN, and a multilayer structure including an n-type cladding layer of AlxGa1-xN (where 0<x<1) formed on and in contact with a main surface of the substrate, an MQW active laye... | 07/28/2011 |
| 20110136139 | METHOD FOR ENHANCING TRANSPORT OF SEMICONDUCTOR NANOCRYSTALS ACROSS BIOLOGICAL MEMBRANES Semiconductor nanoparticle complexes comprising semiconductor nanoparticles in association with cationic polymers are described. Also described are methods for enhancing the transport of semiconductor nanoparticles across biological membranes to provide encoded cells. T... | 06/09/2011 |
| 20090220756 | REVERSIBLE PHOTO BLEACHABLE MATERIALS BASED ON NANO SIZED SEMICONDUCTOR PARTICLES AND THEIR OPTICAL APPLICATIONS Semiconductor nano-particles, due to their specific physical properties, can be used as reversible photo-bleachable materials for a wide spectrum, from far infrared to deep UV. Applications include, reversible contrast enhancement layer (R-CEL) in optical lithography, l... | 09/03/2009 |
| 20090027763 | MEMS DEVICE WITH NANOWIRE STANDOFF LAYER A microelectromechanical systems (MEMS) device and related methods are described. The MEMS device comprises a first member having a first surface and a second member having a second surface, the first and second surfaces being separated by a gap that is closable by a ME... | 01/29/2009 |
| 20070111324 | Alloyed semiconductor quantum dots and concentration-gradient alloyed quantum dots, series comprising the same and methods related thereto An alloyed semiconductor quantum dot comprising an alloy of at least two semiconductors, wherein the quantum dot has a homogeneous composition and is characterized by a band gap energy that is non-linearly related to the molar ratio of the at least two semiconductors; a... | 05/17/2007 |
