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| Application No. | Application Title | Issue Date |
| 20110076483 | SEMICONDUCTOR PHOSPHOR NANOPARTICLE INCLUDING SEMICONDUCTOR CRYSTAL PARTICLE MADE OF 13TH FAMILY-15TH FAMILY SEMICONDUCTOR Disclosed is a semiconductor phosphor nanoparticle including a semiconductor crystalline particle made of a 13th family-15th family semiconductor, a modified organic compound binding to the semiconductor crystalline particle, and a layered compound sandwiching the semic... | 03/31/2011 |
| 20110012109 | METHOD OF FORMING A GROUP III-NITRIDE CRYSTALLINE FILM ON A PATTERNED SUBSTRATE BY HYDRIDE VAPOR PHASE EPITAXY (HVPE) A method of depositing a high quality low defect single crystalline Group III-Nitride film. A patterned substrate having a plurality of features with inclined sidewalls separated by spaces is provided. A Group III-Nitride film is deposited by a hydride vapor phase epita... | 01/20/2011 |
| 20100148120 | LIGHT-EMITTING APPARATUS, PHOSPHORESCENT PORTION, AND METHOD OF PRODUCING THE SAME A light-emitting apparatus composed of a light source that emits primary light and a phosphor that absorbs the primary light and emits secondary light offers high brightness, low power consumption, and a long lifetime while minimizing adverse effects on the environment.... | 06/17/2010 |
| 20080142926 | Directionally controlled growth of nanowhiskers Nanowhiskers are grown in a non-preferential growth direction by regulation of nucleation conditions to inhibit growth in a preferential direction. In a preferred implementation, <001> III-V semiconductor nanowhiskers are grown on an (001) III-V semiconductor substrate ... | 06/19/2008 |
| 20070111324 | Alloyed semiconductor quantum dots and concentration-gradient alloyed quantum dots, series comprising the same and methods related thereto An alloyed semiconductor quantum dot comprising an alloy of at least two semiconductors, wherein the quantum dot has a homogeneous composition and is characterized by a band gap energy that is non-linearly related to the molar ratio of the at least two semiconductors; a... | 05/17/2007 |
