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Class 556/410 - Nitrogen attached directly to silicon by nonionic bonding


Subclass of Class 556 - Organic compounds -- part of the class 532-570 series
Definition: Compounds in which nitrogen is attached directly to silicon
No. of patents: 215
Last issue date: 02/26/2013


1            
NumberTitleIssue Date
8383849Precursors for CVD silicon carbo-nitride films
Classes of liquid aminosilanes have been found which allow for the production of silicon carbo-nitride films of the general formula SixCyNz. These aminosilanes, in contrast, to some of the precursors employed heretofore, are liquid a...
02/26/2013
8318966Organometallic compounds
This invention relates to organometallic compounds represented by the formula HaM(NR1R2)x(NR3H)y(NH2)z wherein M is a metal or metalloid, each of R1, R2 and...
11/27/2012
8288577Precursors for CVD silicon carbo-nitride films
Classes of liquid aminosilanes have been found which allow for the production of silicon carbo-nitride films of the general formula SixCyNz. These aminosilanes, in contrast, to some of the precursors employed heretofore, are liquid a...
10/16/2012
8153832Pentakis(dimethylamino) disilane precursor comprising compound and method for the preparation thereof
Pentakis(dimethylamino) disilane with general formula (1): Si2(NMe2)5Y, where Y is selected from the group comprising H, Cl or an amino group its preparation method and its use to manufacture gate dielectric films or etch-stop dielectric films of SiN or SiON. ...
04/10/2012
8129555Precursors for depositing silicon-containing films and methods for making and using same
Aminosilane precursors for depositing silicon-containing films, and methods for depositing silicon-containing films from these aminosilane precursors, are described herein. In one embodiment, there is provided an aminosilane precursor for depositing silicon-containi...
03/06/2012
8101788Silicon precursors and method for low temperature CVD of silicon-containing films
Novel silicon precursors for low temperature deposition of silicon films are described herein. The disclosed precursors possess low vaporization temperatures, preferably less than about 500° C. In addition, embodiments of the silicon precursors incorporate a —Siâ...
01/24/2012
7932413Precursors for CVD silicon carbo-nitride films
Classes of liquid aminosilanes have been found which allow for the production of silicon-containing films. These aminosilanes, in contrast, to some of the precursors employed heretofore, are liquid at room temperature and pressure allowing for convenient handling. I...
04/26/2011
7863473Method of producing organosilylamine containing radiation-polymerizable functional group and organosilylamine containing radiation-polymerizable functional group
A method of producing an organosilylamine containing a radiation-polymerizable functional group that is useful as a surface treatment agent is provided. The method includes reacting an organosilylamine containing a haloalkyl group, and at least one salt having a rad...
01/04/2011
7786320Composition and method for low temperature deposition of silicon-containing films such as films including silicon, silicon nitride, silicon dioxide and/or silicon-oxynitride
Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as low dielectric constant (k) thin films, high k gate silicates, low temperature silicon epitaxial films, and films containing silicon nitride (Si3N...
08/31/2010
7781605Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride films
Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as films including silicon carbonitride, silicon oxycarbonitride, and silicon nitride (Si3N4), and a method of depositing the silicon prec...
08/24/2010
7601860Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride films
Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as films including silicon carbonitride, silicon oxycarbonitride, and silicon nitride (Si3N4), and a method of depositing the silicon prec...
10/13/2009
7579496Monosilane or disilane derivatives and method for low temperature deposition of silicon-containing films using the same
This invention relates to silicon precursor compositions for forming silicon-containing films by low temperature (e.g.,
08/25/2009
7446217Composition and method for low temperature deposition of silicon-containing films
This invention relates to silicon precursor compositions for forming silicon-containing films by low temperature (e.g.,
11/04/2008
7417105Crosslinkable silane-terminated polymer and sealant composition made with same
A crosslinkable silane-terminated polymer is provided which includes the reaction product of an isocyanate-terminated prepolymer and a silane possessing a plurality of hydrolysable sites and at least one active hydrogen-containing group which is reactive for isocyan...
08/26/2008
7396950Process for production of trialkoxyhalosilanes
A process for the production of trialkoxyhalosilanes which comprises reacting a tetrahalosilane [37] with a tetra-alkoxysilane [38] in the presence of an alcohol whose alkoxy group is the same as those of the tetraalkoxysilane to thereby obtain a trialkoxyhalosilane...
07/08/2008
7208427Precursor compositions and processes for MOCVD of barrier materials in semiconductor manufacturing
Metalorganic precursors of the formula: (R1R2N)a−bMXb wherein: M is the precursor metal center, selected from the group of Ta, Ti, W, Nb, Si, Al and B; a is a number equal to the valence of M; 1≦bâ‰...
04/24/2007
7192470Preservative compositions for materials and method of preserving same
Preservative composition for various materials and method of preserving the same is disclosed. The preservative composition includes at least one silane-containing material and at least one hydrocarbon solvent containing molecules of at least five carbon atoms. ...
03/20/2007
7180193Via recess in underlying conductive line
A semiconductor device includes a dielectric layer, a conductive line, a via, and a via recess in the conductive line. The conductive line is underlying the dielectric layer. The via is formed in the dielectric layer and extends into the conductive line to form the ...
02/20/2007
7151139Antimicrobial polymeric surfaces
Bactericidal compositions are disclosed that comprise a polymeric compound immobilized on a material. Medical devices are also disclosed which comprise such a bactericidal composition. Methods are disclosed for covalently derivatizing the surfaces of common material...
12/19/2006
RE39428High temperature elastomers from linear poly (silarylene-siloxane-acetylene)
A linear polymer has repeating units represented by the formula wherein (a) n is an integer greater than or equal to 0, (b) x is an integer greater than or equal to 1, and
12/12/2006
7148367Organometallic compound, its synthesis method, and solution raw material and metal-containing thin film containing the same
The organometallic compound of the present invention is a compound that has bonds between metal atoms and nitrogen atoms or bonds between semimetal atoms and nitrogen atoms, and the content of chlorine in the compound is 200 ppm or less and the content of water is 3...
12/12/2006
7128778Preservative compositions for wood products
Preservative compositions for wood products is described. The compositions include at least one boron-containing material, such as but not limited to boric anhydride, and at least one silane-containing material, such as but not limited to methyltrichlorosilane. Opti...
10/31/2006
7125488Polar-modified bonded phase materials for chromatographic separations
Novel compositions are disclosed for use as a stationary phase in chromatography comprising an inorganic substrate that is modified with at least one silane having the formula R1δ-Qα-(CH2)βSiR2
10/24/2006
RE39332High temperature elastomers from linear poly (silarylene-siloxane-acetylene)
A linear polymer has repeating units represented by the formula wherein (a) n is an integer greater than or equal to 0, (b) x is an integer greater than or equal to 1, and
10/10/2006
7101959Polymerization catalysts
A subject of the present invention is new compounds having a lanthanide and having a tridentate ligand, a process for their preparation and their use in particular as polymerization catalysts. ...
09/05/2006
7094609Spatially addressable combinatorial chemical arrays in encoded optical disk format
A method for preparing very large spatially-addressable arrays of chemical compounds by light-directed synthesis is provided, wherein the light is provided by a laser and the compounds are arrayed on a rotating disc in a CD-ROM format. A method for assaying the resu...
08/22/2006
7084080Silicon source reagent compositions, and method of making and using same for microelectronic device structure
A method of synthesizing an aminosilane source reagent composition, by reacting an aminosilane precursor compound with an amine source reagent compound in a solvent medium comprising at least one activating solvent component, to yield an aminosilane source reagent c...
08/01/2006
7081543Bridged biscyclopentadienyl ligands and method of preparation
The present invention relates to ligands and the synthesis of those ligands for use in metallocene complexes. More particularly, the present invention relates to the synthesis of diarylsilyl bridged biscyclopentadienes using diarylsilyldisulfonates. Even more partic...
07/25/2006
7074863Metallocene catalysts containing an idenyl moiety substituted at the 4,-5,-6- or 7-position by a siloxy or germyloxy group
A metallocene catalyst in which the metal is coordinated by a η5 cyclopentadienyl ligand which forms part of an indenyl or indenyloid moiety, characterized in that said moiety is directly or indirectly substituted at the 4-, 5-, 6- or 7-position by a pendant siloxy...
07/11/2006
7067414Low k interlevel dielectric layer fabrication methods
A low k inter-level dielectric layer fabrication method includes providing a substrate having integrated circuitry at least partially formed thereon. An oxide-comprising inter-level dielectric layer including carbon and having a dielectric constant no greater than 3...
06/27/2006
7033505Packings for liquid chromatography, process for preparing and usage
The present invention provides packings for high performance liquid chromatography whose residual silanol groups are extremely reduced and which remarkably prevent tailing of basic compounds. Endcapping agents represented by the following general formula [II] are re...
04/25/2006
7026497Adhesive compound and method for forming photoresist pattern using the same
An adhesive compound for use during the formation of a photoresist film represented by the following chemical formula, wherein R represents a photoacid generator is disclosed. ...
04/11/2006
7019159Hexakis(monohydrocarbylamino) disilanes and method for the preparation thereof
A composition and method of preparation, to provide silane compounds that are free of chlorine. The compounds are hexakis(monohydrocarbylamino)disilanes with general formula (I) ((R)HN)3—Si—Si—(NH(R))3  (I) wherein...
03/28/2006
7015258Ink composition for ink jet recording, ink cartridge containing the ink composition, and recording apparatus using the ink composition
The present invention provides an ink composition for ink jet recording, including an azo dye, a humectant, water, and an amino-group-containing water-soluble compound that undergoes condensation polymerization in the absence of the water (e.g., an aminosilane compo...
03/21/2006
6994890Cleaning and multifunctional coating composition containing an organosilane quaternary compound and hydrogen peroxide
Cleaning and multifunctional coating compositions containing hydrogen peroxide and an organosilane quaternary compound in aqueous formulations are used to improve water and soil repellency and residual antimicrobial activity. Various surfaces may be treated includin...
02/07/2006
6963006Process for the production and purification of bis(tertiary-butylamino)silane
A process for synthesizing an aminosilane compound such as bis(tertiarybutylamino)silane is provided. In one aspect of the present invention, there is provided a process for making bis(tertiarybutylamino)silane comprising reacting a stoichiometric excess of tert-but...
11/08/2005
6960676Method of preparing group 14 bridged biscyclopentadienyl ligands
The present invention relates to ligands and the synthesis of those ligands for use in metallocene complexes. More particularly, the present invention relates to the synthesis of diarylsilyl bridged biscyclopentadienes using diarylsilyldisulfonates. Even more partic...
11/01/2005
6949186Polar silanes and their use on silica supports
A modified silica support having a polar phase bound to its surface and suitable for use for chromatographic separations, having the following formula: wherein, m=0-20; n=0-20; p=1-50; X is sulfonyl, carbonyl, carbamoy...
09/27/2005
6943250Protected aminofunctionalized polymerization initiators and methods of making and using same
Anionic polymerization initiators useful in the preparation of polymers having a protected amine functional group. The amine functionality is part of a heterocyclic radical and includes a protecting group. ...
09/13/2005
6942918Mesoporous films having reduced dielectric constants
A process provides a ceramic film, such as a mesoporous silica film, on a substrate, such as a silicon wafer. The process includes preparing a film-forming fluid containing a ceramic precursor, a catalyst, a surfactant and a solvent, depositing the film-forming flui...
09/13/2005
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