Safety System For Remove a Rider From a Vehicle by Deploying a Parachute
Methods and apparatus for reducing the velocity of a rider in or on an open cockpit vehicle when the rider is thrown from the vehicle.
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| Number | Title | Issue Date |
| 8383849 | Precursors for CVD silicon carbo-nitride films Classes of liquid aminosilanes have been found which allow for the production of silicon carbo-nitride films of the general formula SixCyNz. These aminosilanes, in contrast, to some of the precursors employed heretofore, are liquid a... | 02/26/2013 |
| 8318966 | Organometallic compounds This invention relates to organometallic compounds represented by the formula HaM(NR1R2)x(NR3H)y(NH2)z wherein M is a metal or metalloid, each of R1, R2 and... | 11/27/2012 |
| 8288577 | Precursors for CVD silicon carbo-nitride films Classes of liquid aminosilanes have been found which allow for the production of silicon carbo-nitride films of the general formula SixCyNz. These aminosilanes, in contrast, to some of the precursors employed heretofore, are liquid a... | 10/16/2012 |
| 8153832 | Pentakis(dimethylamino) disilane precursor comprising compound and method for the preparation thereof Pentakis(dimethylamino) disilane with general formula (1): Si2(NMe2)5Y, where Y is selected from the group comprising H, Cl or an amino group its preparation method and its use to manufacture gate dielectric films or etch-stop dielectric films of SiN or SiON. ... | 04/10/2012 |
| 8129555 | Precursors for depositing silicon-containing films and methods for making and using same Aminosilane precursors for depositing silicon-containing films, and methods for depositing silicon-containing films from these aminosilane precursors, are described herein. In one embodiment, there is provided an aminosilane precursor for depositing silicon-containi... | 03/06/2012 |
| 8101788 | Silicon precursors and method for low temperature CVD of silicon-containing films Novel silicon precursors for low temperature deposition of silicon films are described herein. The disclosed precursors possess low vaporization temperatures, preferably less than about 500° C. In addition, embodiments of the silicon precursors incorporate a —Siâ... | 01/24/2012 |
| 7932413 | Precursors for CVD silicon carbo-nitride films Classes of liquid aminosilanes have been found which allow for the production of silicon-containing films. These aminosilanes, in contrast, to some of the precursors employed heretofore, are liquid at room temperature and pressure allowing for convenient handling. I... | 04/26/2011 |
| 7863473 | Method of producing organosilylamine containing radiation-polymerizable functional group and organosilylamine containing radiation-polymerizable functional group A method of producing an organosilylamine containing a radiation-polymerizable functional group that is useful as a surface treatment agent is provided. The method includes reacting an organosilylamine containing a haloalkyl group, and at least one salt having a rad... | 01/04/2011 |
| 7786320 | Composition and method for low temperature deposition of silicon-containing films such as films including silicon, silicon nitride, silicon dioxide and/or silicon-oxynitride Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as low dielectric constant (k) thin films, high k gate silicates, low temperature silicon epitaxial films, and films containing silicon nitride (Si3N... | 08/31/2010 |
| 7781605 | Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride films Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as films including silicon carbonitride, silicon oxycarbonitride, and silicon nitride (Si3N4), and a method of depositing the silicon prec... | 08/24/2010 |
| 7601860 | Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride films Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as films including silicon carbonitride, silicon oxycarbonitride, and silicon nitride (Si3N4), and a method of depositing the silicon prec... | 10/13/2009 |
| 7579496 | Monosilane or disilane derivatives and method for low temperature deposition of silicon-containing films using the same This invention relates to silicon precursor compositions for forming silicon-containing films by low temperature (e.g., | 08/25/2009 |
| 7446217 | Composition and method for low temperature deposition of silicon-containing films This invention relates to silicon precursor compositions for forming silicon-containing films by low temperature (e.g., | 11/04/2008 |
| 7417105 | Crosslinkable silane-terminated polymer and sealant composition made with same A crosslinkable silane-terminated polymer is provided which includes the reaction product of an isocyanate-terminated prepolymer and a silane possessing a plurality of hydrolysable sites and at least one active hydrogen-containing group which is reactive for isocyan... | 08/26/2008 |
| 7396950 | Process for production of trialkoxyhalosilanes A process for the production of trialkoxyhalosilanes which comprises reacting a tetrahalosilane [37] with a tetra-alkoxysilane [38] in the presence of an alcohol whose alkoxy group is the same as those of the tetraalkoxysilane to thereby obtain a trialkoxyhalosilane... | 07/08/2008 |
| 7208427 | Precursor compositions and processes for MOCVD of barrier materials in semiconductor manufacturing Metalorganic precursors of the formula: (R1R2N)a−bMXb wherein: M is the precursor metal center, selected from the group of Ta, Ti, W, Nb, Si, Al and B; a is a number equal to the valence of M; 1≦bâ‰... | 04/24/2007 |
| 7192470 | Preservative compositions for materials and method of preserving same Preservative composition for various materials and method of preserving the same is disclosed. The preservative composition includes at least one silane-containing material and at least one hydrocarbon solvent containing molecules of at least five carbon atoms. ... | 03/20/2007 |
| 7180193 | Via recess in underlying conductive line A semiconductor device includes a dielectric layer, a conductive line, a via, and a via recess in the conductive line. The conductive line is underlying the dielectric layer. The via is formed in the dielectric layer and extends into the conductive line to form the ... | 02/20/2007 |
| 7151139 | Antimicrobial polymeric surfaces Bactericidal compositions are disclosed that comprise a polymeric compound immobilized on a material. Medical devices are also disclosed which comprise such a bactericidal composition. Methods are disclosed for covalently derivatizing the surfaces of common material... | 12/19/2006 |
| RE39428 | High temperature elastomers from linear poly (silarylene-siloxane-acetylene) A linear polymer has repeating units represented by the formula wherein (a) n is an integer greater than or equal to 0, (b) x is an integer greater than or equal to 1, and | 12/12/2006 |
| 7148367 | Organometallic compound, its synthesis method, and solution raw material and metal-containing thin film containing the same The organometallic compound of the present invention is a compound that has bonds between metal atoms and nitrogen atoms or bonds between semimetal atoms and nitrogen atoms, and the content of chlorine in the compound is 200 ppm or less and the content of water is 3... | 12/12/2006 |
| 7128778 | Preservative compositions for wood products Preservative compositions for wood products is described. The compositions include at least one boron-containing material, such as but not limited to boric anhydride, and at least one silane-containing material, such as but not limited to methyltrichlorosilane. Opti... | 10/31/2006 |
| 7125488 | Polar-modified bonded phase materials for chromatographic separations Novel compositions are disclosed for use as a stationary phase in chromatography comprising an inorganic substrate that is modified with at least one silane having the formula R1δ-Qα-(CH2)βSiR2 | 10/24/2006 |
| RE39332 | High temperature elastomers from linear poly (silarylene-siloxane-acetylene) A linear polymer has repeating units represented by the formula wherein (a) n is an integer greater than or equal to 0, (b) x is an integer greater than or equal to 1, and | 10/10/2006 |
| 7101959 | Polymerization catalysts A subject of the present invention is new compounds having a lanthanide and having a tridentate ligand, a process for their preparation and their use in particular as polymerization catalysts. ... | 09/05/2006 |
| 7094609 | Spatially addressable combinatorial chemical arrays in encoded optical disk format A method for preparing very large spatially-addressable arrays of chemical compounds by light-directed synthesis is provided, wherein the light is provided by a laser and the compounds are arrayed on a rotating disc in a CD-ROM format. A method for assaying the resu... | 08/22/2006 |
| 7084080 | Silicon source reagent compositions, and method of making and using same for microelectronic device structure A method of synthesizing an aminosilane source reagent composition, by reacting an aminosilane precursor compound with an amine source reagent compound in a solvent medium comprising at least one activating solvent component, to yield an aminosilane source reagent c... | 08/01/2006 |
| 7081543 | Bridged biscyclopentadienyl ligands and method of preparation The present invention relates to ligands and the synthesis of those ligands for use in metallocene complexes. More particularly, the present invention relates to the synthesis of diarylsilyl bridged biscyclopentadienes using diarylsilyldisulfonates. Even more partic... | 07/25/2006 |
| 7074863 | Metallocene catalysts containing an idenyl moiety substituted at the 4,-5,-6- or 7-position by a siloxy or germyloxy group A metallocene catalyst in which the metal is coordinated by a η5 cyclopentadienyl ligand which forms part of an indenyl or indenyloid moiety, characterized in that said moiety is directly or indirectly substituted at the 4-, 5-, 6- or 7-position by a pendant siloxy... | 07/11/2006 |
| 7067414 | Low k interlevel dielectric layer fabrication methods A low k inter-level dielectric layer fabrication method includes providing a substrate having integrated circuitry at least partially formed thereon. An oxide-comprising inter-level dielectric layer including carbon and having a dielectric constant no greater than 3... | 06/27/2006 |
| 7033505 | Packings for liquid chromatography, process for preparing and usage The present invention provides packings for high performance liquid chromatography whose residual silanol groups are extremely reduced and which remarkably prevent tailing of basic compounds. Endcapping agents represented by the following general formula [II] are re... | 04/25/2006 |
| 7026497 | Adhesive compound and method for forming photoresist pattern using the same An adhesive compound for use during the formation of a photoresist film represented by the following chemical formula, wherein R represents a photoacid generator is disclosed. ... | 04/11/2006 |
| 7019159 | Hexakis(monohydrocarbylamino) disilanes and method for the preparation thereof A composition and method of preparation, to provide silane compounds that are free of chlorine. The compounds are hexakis(monohydrocarbylamino)disilanes with general formula (I) ((R)HN)3—Si—Si—(NH(R))3  (I) wherein... | 03/28/2006 |
| 7015258 | Ink composition for ink jet recording, ink cartridge containing the ink composition, and recording apparatus using the ink composition The present invention provides an ink composition for ink jet recording, including an azo dye, a humectant, water, and an amino-group-containing water-soluble compound that undergoes condensation polymerization in the absence of the water (e.g., an aminosilane compo... | 03/21/2006 |
| 6994890 | Cleaning and multifunctional coating composition containing an organosilane quaternary compound and hydrogen peroxide Cleaning and multifunctional coating compositions containing hydrogen peroxide and an organosilane quaternary compound in aqueous formulations are used to improve water and soil repellency and residual antimicrobial activity. Various surfaces may be treated includin... | 02/07/2006 |
| 6963006 | Process for the production and purification of bis(tertiary-butylamino)silane A process for synthesizing an aminosilane compound such as bis(tertiarybutylamino)silane is provided. In one aspect of the present invention, there is provided a process for making bis(tertiarybutylamino)silane comprising reacting a stoichiometric excess of tert-but... | 11/08/2005 |
| 6960676 | Method of preparing group 14 bridged biscyclopentadienyl ligands The present invention relates to ligands and the synthesis of those ligands for use in metallocene complexes. More particularly, the present invention relates to the synthesis of diarylsilyl bridged biscyclopentadienes using diarylsilyldisulfonates. Even more partic... | 11/01/2005 |
| 6949186 | Polar silanes and their use on silica supports A modified silica support having a polar phase bound to its surface and suitable for use for chromatographic separations, having the following formula: wherein, m=0-20; n=0-20; p=1-50; X is sulfonyl, carbonyl, carbamoy... | 09/27/2005 |
| 6943250 | Protected aminofunctionalized polymerization initiators and methods of making and using same Anionic polymerization initiators useful in the preparation of polymers having a protected amine functional group. The amine functionality is part of a heterocyclic radical and includes a protecting group. ... | 09/13/2005 |
| 6942918 | Mesoporous films having reduced dielectric constants A process provides a ceramic film, such as a mesoporous silica film, on a substrate, such as a silicon wafer. The process includes preparing a film-forming fluid containing a ceramic precursor, a catalyst, a surfactant and a solvent, depositing the film-forming flui... | 09/13/2005 |