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| Number | Title | Issue Date |
| 8440733 | Semiconductor component and production method Semiconductor component and method for production of a semiconductor component. The invention relates to a semiconductor component having a semiconductor chip, which is arranged on a substrate, in one embodiment on a chip carrier, and an encapsulation material, whic... | 05/14/2013 |
| 8362097 | Polyethylene molding powder and porous articles made therefrom The present invention relates to a new molding powder comprising polyethylene polymer particles. The molecular weight of the polyethylene polymer is within the range of from about 600,000 g/mol to about 2,700,000 g/mol as determined by ASTM 4020. The average particl... | 01/29/2013 |
| 7960442 | Nanoporous media templated from unsymmetrical amphiphilic porogens Substantially or roughly spherical micellar structures useful in the formation of nanoporous materials by templating are disclosed. A roughly spherical micellar structure is formed by organization of one or more spatially unsymmetric organic amphiphilic molecules. E... | 06/14/2011 |
| 7674838 | Curable foam elastomeric compositions A two-part curable foaming composition comprising: (A) A first part comprising: (i) an alkoxysilyl capped prepolymer; and (ii) a polyhydrogen siloxane; (iii) op... | 03/09/2010 |
| 7368483 | Porous composition of matter, and method of making same A low-k organic dielectric material having stable nano-sized porous is provided as well as a method of fabricating the same. The porous low-k organic dielectric material is made from a composition of matter having a vitrification temperature (Tv-comp) which includes... | 05/06/2008 |
| 7361447 | Photoresist polymer and photoresist composition containing the same Photoresist polymers and photoresist compositions containing the same. Photoresist patterns of less than 50 nm are achieved with EUV (Extreme Ultraviolet) as an exposure light source with photoresist compositions comprising (i) a photoresist polymer comprising a pol... | 04/22/2008 |
| 7358182 | Method of forming an interconnect structure A method of forming damascene interconnect structure in an organo-silicate glass layer without causing damage to the organo-silicate glass material. The method includes forming a stack of hardmask layers over the organo-silicate glass layer, defining openings in the... | 04/15/2008 |
| 7358299 | Silicon-based composition, low dielectric constant film, semiconductor device, and method for producing low dielectric constant film A composition comprising a siloxane resin, a silicon compound substantially consisting of silicon, carbon and hydrogen, wherein the number ratio of carbon to silicon atoms forming an —X— bond (wherein X is (C)m (where m is an integer in the range of f... | 04/15/2008 |
| 7358300 | Composition for forming silica based coating film, silica based coating film and method for preparation thereof, and electronic parts The composition for forming silica based coating of the invention comprises siloxane resin such as an alkoxysilane as component (a), a solvent such as an alcohol capable of dissolving the siloxane resin as component (b), an ammonium salt, etc. as component (c) and a... | 04/15/2008 |
| 7352000 | Organic thin film transistor with polymeric interface Provided is an organic thin film transistor comprising a polymeric layer interposed between a gate dielectric and an organic semiconductor layer. Various homopolymers, copolymers, and functional copolymers are taught for use in the polymeric layer. An integrated cir... | 04/01/2008 |
| 7302776 | Baffled attic vent Baffled attic vents and methods of their use and manufacture are provided. The baffled air vent of this invention includes an elongated member having a roof facing side and an attic space facing side, a pair of longitudinal side portions, first and second transverse... | 12/04/2007 |
| 7294453 | Electronic device manufacture Disclosed are methods of manufacturing electronic devices, particularly integrated circuits. Such methods include the use of low dielectric constant material prepared by using a removable porogen material. ... | 11/13/2007 |
| 7288292 | Ultra low k (ULK) SiCOH film and method The present invention provides a multiphase, ultra low k film which exhibits improved elastic modulus and hardness as well as various methods for forming the same. The multiphase, ultra low k dielectric film includes atoms of Si, C, O and H, has a dielectric constan... | 10/30/2007 |
| 7256127 | Air gap formation A method of forming air gaps within a solid structure is provided. In this method, a sacrificial material is covered by an overlayer. The sacrificial material is then removed through the overlayer to leave an air gap. Such air gaps are particularly useful as insulat... | 08/14/2007 |
| 7208389 | Method of porogen removal from porous low-k films using UV radiation Methods of preparing a porous low-k dielectric material on a substrate are provided. The methods involve the use of ultraviolet radiation to react with and remove porogen from a porogen containing precursor film, leaving a porous low-k dielectric matrix. Methods usi... | 04/24/2007 |
| 7205224 | Very low dielectric constant plasma-enhanced CVD films The present invention provides a method for depositing nano-porous low dielectric constant films by reacting an oxidizable silicon containing compound or mixture comprising an oxidizable silicon component and an oxidizable non-silicon component having thermally liab... | 04/17/2007 |
| 7179755 | Forming a porous dielectric layer and structures formed thereby Methods of forming a microelectronic structure are described. Embodiments of those methods include forming a dielectric layer utilizing a plasma, wherein the plasma comprises a porogen and substantially no oxidizing agent, and then applying energy to the dielectric ... | 02/20/2007 |
| 7176144 | Plasma detemplating and silanol capping of porous dielectric films Methods of preparing a low-k dielectric material on a substrate are provided. The methods involve using plasma techniques to remove porogen from a precursor layer comprising porogen and a dielectric matrix and to protect the dielectric matrix with a silanol capping ... | 02/13/2007 |
| 7163751 | Coating compositions for use with an overcoated photoresist In a first aspect, organic coating compositions are provided, particularly spin-on antireflective coating compositions, that contain a polyester resin component. In a further aspect, coating compositions are provided that contain a resin component obtained by polyme... | 01/16/2007 |
| 7163780 | Electronic device manufacture Disclosed are methods of manufacturing electronic devices, particularly integrated circuits. Such methods include the use of low dielectric constant material prepared by using a removable porogen material. ... | 01/16/2007 |
| 7153754 | Methods for forming porous insulators from “void” creating materials and structures and semiconductor devices including same Methods for forming porous insulative materials for use in forming dielectric structures of semiconductor devices are disclosed. Each insulative material may include a first, substantially nonporous state and a second, porous state. When in the first state, the insu... | 12/26/2006 |
| 7141188 | Organic compositions The present invention provides a composition comprising: (a) dielectric material; and (b) porogen comprising at least two fused aromatic rings wherein each of the fused aromatic rings has at least one alkyl substituent thereon and a bond exists between at least two ... | 11/28/2006 |
| 7132171 | Low dielectric constant insulating film and method of forming the same The present invention relates to a method of forming a low dielectric constant insulating film. Its constitution has the steps of: (a) forming an insulating film containing Si—CH3 bond in the skeleton of Si—O—Si on a substrate; (b) irradiating ultra... | 11/07/2006 |
| 7125793 | Method for forming an opening for an interconnect structure in a dielectric layer having a photosensitive material A method of forming an opening in a disclosed ILD is described. The ILD in one embodiment includes a matrix material and a photosensitive porogen. Hard sidewalls are formed in the ILD allowing a thin barrier layer to be used in a dual damascene copper and porous low... | 10/24/2006 |
| 7115673 | Photosensitive resin composition, porous resin, circuit board, and wireless suspension board The present photosensitive resin composition 2 comprises a polyamic acid resin 4, a photosensitive agent, a dispersible compound 3 dispersible in the polyamic acid resin 4, and a solvent. The porous resin is obtained by removing the solve... | 10/03/2006 |
| 7112615 | Porous material formation by chemical vapor deposition onto colloidal crystal templates Methods and systems are disclosed for fabricating ultra-low dielectric constant porous materials. In one aspect of the invention, a method for making porous low-k films is disclosed. The method uses polymer based porogens as sacrificial templates around which a chem... | 09/26/2006 |
| 7109249 | Composition containing a cross-linkable matrix precursor and a poragen, and porous matrix prepared therefrom A suitable cross-linkable matrix precursor and a poragen can be treated to form a porous cross-linked matrix having a Tg of greater than 300° C. The porous matrix material has a lower dielectric constant than the corresponding non-porous matrix material,... | 09/19/2006 |
| 7097781 | Method for manufacturing porous structure and method for forming pattern A pattern forming material contains a block copolymer or graft copolymer and forms a structure having micro polymer phases, in which, with respect to at least two polymer chains among polymer chains constituting the block copolymer or graft copolymer, the ratio betw... | 08/29/2006 |
| 7094681 | Semiconductor device fabrication method Disclosed is a semiconductor device comprising a semiconductor substrate, a porous insulating film formed above the semiconductor substrate, the porous insulating film having a relative dielectric constant of 2.5 or less and including a first insulating material, at... | 08/22/2006 |
| 7090784 | Method for manufacturing porous structure and method for forming pattern A pattern forming material contains a block copolymer or graft copolymer and forms a structure having micro polymer phases, in which, with respect to at least two polymer chains among polymer chains constituting the block copolymer or graft copolymer, the ratio betw... | 08/15/2006 |
| 7090896 | Process for producing dielectric layers by using multifunctional carbosilanes A process for producing dielectric layers with low dielectric constants by thermal treatment of a sol-gel product of a multifunctional carbosilane, corresponding layers, and their use in the production of electronic components, are described. ... | 08/15/2006 |
| 7091287 | Nanopore forming material for forming insulating film for semiconductors and low dielectric insulating film comprising the same The present invention relates to a nanopore-forming material for forming an insulating film for a semiconductor device, and more particularly to a nanopore-forming organic material containing a triazine functional group and preparation thereof, and a composition for... | 08/15/2006 |
| 7074335 | Method of producing hierarchical porous beads The present invention is a method of producing porous beads, which comprises the steps of providing a first liquid phase comprising a bead matrix material and essentially edgy templating particle(s), said particle(s) being treated with a surface modifying agent; pro... | 07/11/2006 |
| 7066768 | Connector with adjustable dielectric constant A connector, which can have impedance matching between the connector and a cable or a mating connector even if the connector is miniaturized, and a manufacturing method thereof are provided. The connector is joined with an end of a cable 5. The connector has ... | 06/27/2006 |
| 7060330 | Method for forming ultra low k films using electron beam The present invention generally provides a method for depositing a low dielectric constant film using an e-beam treatment. In one aspect, the method includes delivering a gas mixture comprising one or more organosilicon compounds and one or more hydrocarbon compound... | 06/13/2006 |
| 7060204 | Organic compositions The present invention provides a composition comprising: (a) dielectric material; and (b) porogen comprising at least two fused aromatic rings wherein each of the fused aromatic rings has at least one alkyl substituent thereon and a bond exists between at least two ... | 06/13/2006 |
| 7056455 | Process for the preparation of nanostructured materials The present invention comprises a novel process for the preparation of carbon based structured materials with controlled topology, morphology and functionality. The nanostructured materials are prepared by controlled carbonization, or pyrolysis, of precursors compri... | 06/06/2006 |
| 7052967 | Method for fabricating capacitor array preventing crosstalk between adjacent capacitors in semiconductor device A capacitor array of a semiconductor device including a plurality of capacitors is provided. The capacitor array includes a plurality of lower electrodes, which are formed over a semiconductor substrate. A dielectric layer formed over the lower electrodes, and an up... | 05/30/2006 |
| 7049371 | Material for an insulating film, coating varnish for an insulating film, and insulating film and semiconductor device using the same A material for an insulating film which comprises a copolymer obtained by reacting a polyamide having a specific structure and a reactive oligomer as a component forming the film; a coating varnish for an insulating film which comprises this material and an organic ... | 05/23/2006 |
| 7030167 | Nanoporous structures produced from self-assembling molecules Methods for producing nanoporous structures are provided. In the subject methods, two or more, e.g., first and second, different types of self-assembling molecules are combined with each other under conditions sufficient to produce a composite ordered structure from... | 04/18/2006 |
