Did You Know...
...that Charles Goodyear performed some of his experiments on rubber while in debtor's prison? He was there so often he referred to it as his "hotel". Chronically in debt because of poor business sense and ill health, Goodyear depended on the generosity of friends and family. Even after he unlocked the secret to vulcanizing rubber, he was unable to improve his financial situation. When he died, his estate was $200,000 in debt.
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| Number | Title | Issue Date |
| 8148283 | Aluminum nitride sintered body A high-purity aluminum nitride sintered body is provided by efficiently removing oxides contained in a raw material powder in producing an aluminum nitride sintered body and preventing composite oxide produced by reaction of oxides contained in the raw material powd... | 04/03/2012 |
| 8022001 | Aluminum nitride sintered product, method for producing the same, and electrostatic chuck including the same A method for producing an aluminum nitride sintered product according to the present invention includes the steps of (a) preparing a powder mixture that contains AlN, 2 to 10 parts by weight of Eu2O3 with respect to 100 parts by weight of AlN, ... | 09/20/2011 |
| 7803733 | Aluminum nitride sintered body and semiconductor manufacturing apparatus member The aluminum nitride sintered body includes at least europium, aluminum, and oxygen. It was found that a grain boundary phase having a peak having a X-ray diffraction profile substantially the same as that of an Sr3Al2O6 phase could ... | 09/28/2010 |
| 7741237 | Sealing composition for sealing aluminum nitride and aluminum oxynitride ceramics There is described a sealing composition for sealing aluminum nitride and aluminum oxynitride ceramics comprising: a mixture of SiO2, at least one other metal oxide, and a silicon additive comprising at least one of silicon metal or a silicide. The silico... | 06/22/2010 |
| 7737065 | Process for producing aluminum nitride sintered compacts The present invention relates to a process of producing an aluminum nitride sintered body which satisfies both high thermal conductivity and reduction in the shrinkage factor at the time of sintering. The aluminum nitride sintered body is a sintered body of a powder... | 06/15/2010 |
| 7662736 | High thermally conductive aluminum nitride sintered product The high thermal conductive aluminum nitride sintered body according to the present invention has: a thermal conductivity of 220 W/m·K or more; and a three point bending strength of 250 MPa or more; wherein a ratio (IAl2Y | 02/16/2010 |
| 7629282 | Aluminum nitride sintered body, semiconductor manufacturing device and method of manufacturing A conductive channel formed of an (Sm, Ce)Al11O18 is interconnected in grain boundaries of aluminum nitride (AlN) particles, thereby reducing the temperature dependency of the volume resistivity of an AlN sintered body formed therefrom. At the ... | 12/08/2009 |
| 7605102 | Aluminum nitride ceramic and semiconductor manufacturing member An aluminum nitride ceramic including aluminum nitride grains and grain boundary phases comprises a grain boundary phase-rich layer including more amount of the grain boundary phases in a surface layer of the aluminum nitride ceramic than in an inside of the aluminu... | 10/20/2009 |
| 7592280 | Aluminum nitride sintered body, method of manufacturing aluminum nitride sintered body, and member An aluminum nitride sintered body is provided, wherein an average crystal grain diameter is 2.0 μm or less, a crystalline phase detected by an X-ray diffractometer is an AlN phase only or an AlN phase and an AlON phase only, and SiO2 or MgO is present in... | 09/22/2009 |
| 7553787 | Aluminum nitride-based ceramic sintered body and member for semiconductor manufacturing device An aluminum nitride-based ceramic sintered body is provided, which is manufactured by sintering an aluminum nitride powder comprising aluminum nitride as a main component, carbon in an amount of 0.1 wt % or more to 1.0 wt % or less, and containing oxygen in an amoun... | 06/30/2009 |
| 7479467 | High thermally conductive aluminum nitride sintered product The high thermal conductive aluminum nitride sintered body according to the present invention has: a thermal conductivity of 220 W/m·K or more; and a three point bending strength of 250 MPa or more; wherein a ratio (IAl2Y | 01/20/2009 |
| 7407903 | Material for high temperatures The present invention relates to a material for use at temperatures exceeding 1200° C. and in oxidizing atmospheres consisting generally of an alloy between a metal, aluminium (Al) and carbon (C) or nitrogen (N). The invention is characterized in that the alloy has... | 08/05/2008 |
| 7371704 | Sintered bodies of yttrium-aluminum garnet, a method of producing the same and sintering aid therefor An object of the present invention is to lower the sintering temperature required for a sintered body of yttrium-aluminum garnet, to improve the corrosion resistance of the sintered body and to prevent the reduction of the transmittance thereof. A sintered body of y... | 05/13/2008 |
| 7361220 | Method of manufacturing group III nitride single crystal, device used for the method and group III nitride single crystal obtained by the method The present invention provides a method of manufacturing a gallium nitride single crystal that can suppress the decomposition of gallium nitride and improve production efficiency in a sublimation method. According to the manufacturing method, a material (GaN powder)... | 04/22/2008 |
| 7341969 | Aluminum nitride sintered body The object of the present invention is to provide a susceptor with superior thermal uniformity by minimizing pores in an aluminum nitride sintered body. In an aluminum nitride sintered body according to the present invention, the tin content and sulfur conten... | 03/11/2008 |
| 7338723 | Aluminum nitride substrate and production method An aluminum nitride substrate comprises a planar sintered aluminum nitride body containing carbon including free carbon and a substantially planar electrode buried in the sintered aluminum nitride body. The sintered aluminum nitride body includes a work mounting por... | 03/04/2008 |
| 7319916 | High speed and repeatability serial sectioning method for 3-D reconstruction of microstructures using optical microscopy A high speed, high precision, high repeatability serial sectioning method for 3-D reconstruction of microstructure specimen is disclosed. The invention employs high-precision motorized metallographic polishing, viewing and computer controlled digital imaging of micr... | 01/15/2008 |
| 7319914 | High speed and repeatability serial sectioning method for 3-D reconstruction of microstructures using scanning electron microscope A high speed, high precision, high repeatability serial sectioning method for 3-D reconstruction of microstructure specimens is disclosed. The invention employs high-precision motorized metallographic polishing, viewing and computer controlled digital imaging of mic... | 01/15/2008 |
| 7319080 | Aluminum nitride sintered compact An aluminum nitride sintered body comprising crystal grains of an average grain size (D50) of 0.1 to 2.5 μm, and having a pore area ratio of not larger than 1×10−7, a pore density of not larger than 0.05 pores/mm2 of pores having... | 01/15/2008 |
| 7319915 | High speed and repeatability serial sectioning device for 3-D reconstruction of microstructures A high speed, high precision, high repeatability serial sectioning device and method for 3-D reconstruction of microstructure specimens. The invention employs a high-precision motorized metallographic polishing unit, a microscope for viewing and computer controlled ... | 01/15/2008 |
| 7317964 | High speed and repeatability serial sectioning method for 3-D reconstruction of microstructures A high speed, high precision, high repeatability serial sectioning method for 3-D reconstruction of microstructure specimens is disclosed. The invention employs high-precision motorized metallographic polishing, viewing and computer controlled digital imaging of mic... | 01/08/2008 |
| 7314519 | Vapor-phase epitaxial apparatus and vapor phase epitaxial method A vapor-phase growth apparatus including a reaction furnace, a wafer container disposed in said furnace, a gas supply member, and a heating member, wherein the apparatus is designed to form a grown film on a front surface of the wafer by supplying a source gas in a ... | 01/01/2008 |
| 7309672 | Lightweight boron carbide materials with improved mechanical properties and process for their manufacture This disclosure describes sintered bodies comprising about 90 wt % to about 99 wt % of boron carbide, having a B:C atomic ratio ranging from 3.8 to 4.5:1; 0 to 1 wt % free carbon; 0 to 1 wt % BN or AlN, remainder an oxide binder phase; said sintered body having a un... | 12/18/2007 |
| 7303723 | Method of forming nanostructures on ceramics A method for manufacturing oriented arrays of ceramic or metal oxide nanostructures, such as titania (TiO2) nanofibers. The nanofibers are formed on the surface of a body that is first sintered at a temperature in the range of about 1,100 to about 1,400 d... | 12/04/2007 |
| 7294199 | Nitride single crystal and producing method thereof A method of producing a nitride single crystal includes the step of forming a material transport medium layer containing a compound of rare earth element on a surface of a nitride crystal, and the step of making a seed crystal in contact with the material transport ... | 11/13/2007 |
| 7288496 | Aluminum nitride sintered body and method of evaluation for the same An aluminum nitride sintered body is provided, including a polycrystalline structure in which grain boundary fracture toughness KICgb is 1.6 MPa·m1/2 or more. The grain boundary fracture toughness KICgb is dete... | 10/30/2007 |
| 7285259 | Sintering resistant catalyst material and a method for the preparation thereof Preparation of sintering resistant hexaaluminates, AAl11O18, wherein A is an alka-line earth or rare earth metal, and more particularly lanthanum, by a combination of sol-gel and microemulsion techniques using a water soluble salt of A, and a method of forming spher... | 10/23/2007 |
| 7282669 | Ceramic heater and method for manufacturing the same A ceramic heater 1 includes a silicon nitride ceramic substrate 13 and a resistance-heating member 10 embedded in the silicon nitride ceramic substrate 13 . The silicon nitride ceramic substrate 13 contains oxygen derived from a si... | 10/16/2007 |
| 7280341 | Electrostatic chuck An electrostatic chuck is provided in which a lower oxide coating, an electrode, and an upper oxide coating are formed on a substrate. The lower oxide coating is formed by spraying an oxide of Gd, Tb, Dy, Ho, Er, Tm, Yb or Lu and has a dielectric strength of 15-50 k... | 10/09/2007 |
| 7267808 | Aluminum nitride powder, method for producing the same and use thereof The present invention is to produce an aluminum nitride powder which is turned into a sintered body at a temperature of not more than 1600° C., thereby obtaining a sintered aluminum nitride in which the density and thermal conductivity are high and which can be pro... | 09/11/2007 |
| 7247591 | Translucent PCA ceramic, ceramic discharge vessel, and method of making A translucent polycrystalline material suitable for use in ceramic discharge vessels for metal halide lamps is produced by sintering an alumina powder doped with a MgO sintering aid in a nitrogen atmosphere containing a partial pressure of a vapor phase carbon-conta... | 07/24/2007 |
| 7247589 | Transparent polycrystalline sintered ceramic of cubic crystal structure Transparent polycrystalline sintered ceramic of cubic crystal structure. The invention relates to the field of technical ceramic and relates to transparent polycrystalline sintered ceramics of cubic crystal structure for applications with increased mechanical stress... | 07/24/2007 |
| 7211153 | Ceramic joined body, substrate holding structure and substrate processing apparatus A substrate holding structure having excellent corrosion resistance and airtightness, excellent dimensional accuracy and sufficient durability when mechanical or thermal stress is applied thereto is obtained. A holder (1) serving as the substrate holding stru... | 05/01/2007 |
| 7211216 | Aluminum nitride ceramic, semiconductor manufacturing member, and manufacturing method for aluminum nitride ceramic An aluminum nitride ceramic including aluminum nitride grains and grain boundary phases comprises a grain boundary phase-rich layer including more amount of the grain boundary phases in a surface layer of the aluminum nitride ceramic than in an inside of the aluminu... | 05/01/2007 |
| 7209339 | Electrostatic chuck for an electrically insulative substrate, and a method of using same An electrostatic chuck for attracting an insulative substrate to be processed, the electrostatic chuck comprising a dielectric layer having a first surface which attracts an insulative substrate, and a second surface on which are provided a plurality of electrodes, ... | 04/24/2007 |
| 7175714 | Electrode-built-in susceptor and a manufacturing method therefor An electrode-built-in susceptor comprises a mounting plate and a supporting plate which are made of an aluminium-nitride-group-sintered member, an inner electrode which is made of a conductive aluminium-nitride-tantalum-nitride-composite-sintered-member or a conduct... | 02/13/2007 |
| 7166823 | Method of making a heating element of molybdenum silicide type and a heating element A method for the production of a heating element that is composed essentially of molybdenum silicide and alloys of that basic material, and a heating element formed from such material. A material is produced that contains substantially Mo(Si1-xAlx | 01/23/2007 |
| 7148166 | Aluminum nitride ceramics and a member used for the production of semiconductors An aluminum nitride ceramic having a low volume resistivity at room temperature and a relatively low samarium content is provided. The aluminum nitride ceramic contains aluminum nitride as a main component and samarium in a converted content, calculated as samarium ... | 12/12/2006 |
| 7122490 | Aluminum nitride materials and members for use in the production of semiconductors A novel aluminum nitride material having a low room temperature volume resistivity is provided. The aluminum nitride material has an aluminum nitride main component and includes at least 0.03 mol % of europium oxide. The aluminum nitride material has an aluminum nit... | 10/17/2006 |
| 7105235 | Isotropic zero CTE reinforced composite materials A reinforced composite material, having isotropic thermal expansion properties and a low coefficient of thermal expansion over at least the temperature range of from about 0° C. to at least about 150° C., which composite material comprises in combination a first c... | 09/12/2006 |
