Subclasses list
- 1 HAVING BIOMATERIAL COMPONENT OR INTEGRATED WITH LIVING ORGANISM
Patents: 110
Patent Applications: 196
- 2 HAVING SUPERCONDUCTIVE COMPONENT
Patents: 153
Patent Applications: 30
- 3 HAVING MAGNETIC OR FERROELECTRIC COMPONENT
Patents: 2534
Patent Applications: 1138
- 4 REPAIR OR RESTORATION
Patents: 426
Patent Applications: 155
- 5 INCLUDING CONTROL RESPONSIVE TO SENSED CONDITION
Patents: 589
Patent Applications: 259
- 6 Interconnecting plural devices on semiconductor substrate
Patents: 194
Patent Applications: 31
- 7 Optical characteristic sensed
Patents: 527
Patent Applications: 163
- 8 Chemical etching
Patents: 315
Patent Applications: 76
- 9 Plasma etching
Patents: 360
Patent Applications: 48
- 10 Electrical characteristic sensed
Patents: 356
Patent Applications: 74
- 11 Utilizing integral test element
Patents: 234
Patent Applications: 20
- 12 And removal of defect
Patents: 133
Patent Applications: 16
- 13 Altering electrical property by material removal
Patents: 74
Patent Applications: 11
- 14 WITH MEASURING OR TESTING
Patents: 2660
Patent Applications: 727
- 15 Packaging (e.g., with mounting, encapsulating, etc.) or treatment of packaged semiconductor
Patents: 1102
Patent Applications: 241
- 16 Optical characteristic sensed
Patents: 1169
Patent Applications: 368
- 17 Electrical characteristic sensed
Patents: 1269
Patent Applications: 366
- 18 Utilizing integral test element
Patents: 813
Patent Applications: 169
- 19 HAVING INTEGRAL POWER SOURCE (E.G., BATTERY, ETC.)
Patents: 52
Patent Applications: 11
- 20 ELECTRON EMITTER MANUFACTURE
Patents: 533
Patent Applications: 82
- 21 MANUFACTURE OF ELECTRICAL DEVICE CONTROLLED PRINTHEAD
Patents: 416
Patent Applications: 163
- 22 MAKING DEVICE OR CIRCUIT EMISSIVE OF NONELECTRICAL SIGNAL
Patents: 1582
Patent Applications: 888
- 23 Having diverse electrical device
Patents: 164
Patent Applications: 128
- 24 Including device responsive to nonelectrical signal
Patents: 318
Patent Applications: 134
- 25 Packaging (e.g., with mounting, encapsulating, etc.) or treatment of packaged semiconductor
Patents: 355
Patent Applications: 99
- 26 Packaging (e.g., with mounting, encapsulating, etc.) or treatment of packaged semiconductor
Patents: 663
Patent Applications: 689
- 27 Having additional optical element (e.g., optical fiber, etc.)
Patents: 355
Patent Applications: 625
- 28 Plural emissive devices
Patents: 291
Patent Applications: 297
- 29 Including integrally formed optical element (e.g., reflective layer, luminescent material, contoured surface, etc.)
Patents: 1196
Patent Applications: 1521
- 30 Liquid crystal component
Patents: 1357
Patent Applications: 605
- 31 Optical waveguide structure
Patents: 654
Patent Applications: 259
- 32 Optical grating structure
Patents: 290
Patent Applications: 81
- 33 Substrate dicing
Patents: 439
Patent Applications: 218
- 34 Making emissive array
Patents: 365
Patent Applications: 720
- 35 Multiple wavelength emissive
Patents: 155
Patent Applications: 97
- 36 Ordered or disordered
Patents: 105
Patent Applications: 22
- 37 Graded composition
Patents: 121
Patent Applications: 28
- 38 Passivating of surface
Patents: 186
Patent Applications: 68
- 39 Mesa formation
Patents: 344
Patent Applications: 126
- 40 Tapered etching
Patents: 257
Patent Applications: 20
- 41 With epitaxial deposition of semiconductor adjacent mesa
Patents: 252
Patent Applications: 13
- 42 Groove formation
Patents: 214
Patent Applications: 81
- 43 Tapered etching
Patents: 165
Patent Applications: 9
- 44 With epitaxial deposition of semiconductor in groove
Patents: 232
Patent Applications: 24
- 45 Dopant introduction into semiconductor region
Patents: 267
Patent Applications: 95
- 46 Compound semiconductor
Patents: 965
Patent Applications: 669
- 47 Heterojunction
Patents: 669
Patent Applications: 431
- 48 MAKING DEVICE OR CIRCUIT RESPONSIVE TO NONELECTRICAL SIGNAL
Patents: 1304
Patent Applications: 473
- 49 Chemically responsive
Patents: 208
Patent Applications: 197
- 50 Physical stress responsive
Patents: 675
Patent Applications: 399
- 51 Packaging (e.g., with mounting, encapsulating, etc.) or treatment of packaged semiconductor
Patents: 508
Patent Applications: 335
- 52 Having cantilever element
Patents: 804
Patent Applications: 174
- 53 Having diaphragm element
Patents: 681
Patent Applications: 219
- 54 Thermally responsive
Patents: 197
Patent Applications: 163
- 55 Packaging (e.g., with mounting, encapsulating, etc.) or treatment of packaged semiconductor
Patents: 194
Patent Applications: 32
- 56 Responsive to corpuscular radiation (e.g., nuclear particle detector, etc.)
Patents: 54
Patent Applications: 46
- 57 Responsive to electromagnetic radiation
Patents: 844
Patent Applications: 692
- 58 Gettering of substrate
Patents: 86
Patent Applications: 31
- 59 Having diverse electrical device
Patents: 317
Patent Applications: 243
- 60 Charge transfer device (e.g., CCD, etc.)
Patents: 330
Patent Applications: 121
- 61 Continuous processing
Patents: 61
Patent Applications: 34
- 62 Using running length substrate
Patents: 161
Patent Applications: 35
- 63 Particulate semiconductor component
Patents: 115
Patent Applications: 82
- 64 Packaging (e.g., with mounting, encapsulating, etc.) or treatment of packaged semiconductor
Patents: 511
Patent Applications: 397
- 65 Having additional optical element (e.g., optical fiber, etc.)
Patents: 306
Patent Applications: 264
- 66 Plural responsive devices (e.g., array, etc.)
Patents: 289
Patent Applications: 140
- 67 Assembly of plural semiconductor substrates
Patents: 291
Patent Applications: 54
- 68 Substrate dicing
Patents: 215
Patent Applications: 104
- 69 Including integrally formed optical element (e.g., reflective layer, luminescent layer, etc.)
Patents: 430
Patent Applications: 451
- 70 Color filter
Patents: 329
Patent Applications: 443
- 71 Specific surface topography (e.g., textured surface, etc.)
Patents: 162
Patent Applications: 152
- 72 Having reflective or antireflective component
Patents: 373
Patent Applications: 459
- 73 Making electromagnetic responsive array
Patents: 406
Patent Applications: 527
- 74 Vertically arranged (e.g., tandem, stacked, etc.)
Patents: 125
Patent Applications: 36
- 75 Charge transfer device (e.g., CCD, etc.)
Patents: 262
Patent Applications: 83
- 76 Majority signal carrier (e.g., buried or bulk channel, peristaltic, etc.)
Patents: 50
Patent Applications: 12
- 77 Compound semiconductor
Patents: 41
Patent Applications: 5
- 78 Having structure to improve output signal (e.g., exposure control structure, etc.)
Patents: 61
Patent Applications: 6
- 79 Having blooming suppression structure (e.g., antiblooming drain, etc.)
Patents: 69
Patent Applications: 9
- 80 Lateral series connected array
Patents: 211
Patent Applications: 88
- 81 Specified shape junction barrier (e.g., V-grooved junction, etc.)
Patents: 41
Patent Applications: 3
- 82 Having organic semiconductor component
Patents: 242
Patent Applications: 222
- 83 Forming point contact
Patents: 31
Patent Applications: 9
- 84 Having selenium or tellurium elemental semiconductor component
Patents: 41
Patent Applications: 79
- 85 Having metal oxide or copper sulfide compound semiconductive component
Patents: 109
Patent Applications: 78
- 86 And cadmium sulfide compound semiconductive component
Patents: 42
Patent Applications: 8
- 87 Graded composition
Patents: 99
Patent Applications: 115
- 88 Direct application of electric current
Patents: 56
Patent Applications: 20
- 89 Fusion or solidification of semiconductor region
Patents: 76
Patent Applications: 15
- 90 Including storage of electrical charge in substrate
Patents: 27
Patent Applications: 10
- 91 Avalanche diode
Patents: 72
Patent Applications: 38
- 92 Schottky barrier junction
Patents: 146
Patent Applications: 25
- 93 Compound semiconductor
Patents: 224
Patent Applications: 139
- 94 Heterojunction
Patents: 331
Patent Applications: 134
- 95 Chalcogen (i.e., oxygen (O), sulfur (S), selenium (Se), tellurium (Te)) containing
Patents: 501
Patent Applications: 263
- 96 Amorphous semiconductor
Patents: 525
Patent Applications: 171
- 97 Polycrystalline semiconductor
Patents: 350
Patent Applications: 113
- 98 Contact formation (i.e., metallization)
Patents: 577
Patent Applications: 596
- 99 HAVING ORGANIC SEMICONDUCTIVE COMPONENT
Patents: 950
Patent Applications: 941
- 100 MAKING POINT CONTACT DEVICE
Patents: 46
Patent Applications: 7
- 101 Direct application of electrical current
Patents: 14
Patent Applications: 1
- 102 HAVING SELENIUM OR TELLURIUM ELEMENTAL SEMICONDUCTOR COMPONENT
Patents: 203
Patent Applications: 456
- 103 Direct application of electrical current
Patents: 27
Patent Applications: 5
- 104 HAVING METAL OXIDE OR COPPER SULFIDE COMPOUND SEMICONDUCTOR COMPONENT
Patents: 210
Patent Applications: 771
- 105 HAVING DIAMOND SEMICONDUCTOR COMPONENT
Patents: 268
Patent Applications: 107
- 106 PACKAGING (E.G., WITH MOUNTING, ENCAPSULATING, ETC.) OR TREATMENT OF PACKAGED SEMICONDUCTOR
Patents: 3040
Patent Applications: 1090
- 107 Assembly of plural semiconductive substrates each possessing electrical device
Patents: 1624
Patent Applications: 896
- 108 Flip-chip-type assembly
Patents: 2073
Patent Applications: 791
- 109 Stacked array (e.g., rectifier, etc.)
Patents: 1187
Patent Applications: 1051
- 110 Making plural separate devices
Patents: 729
Patent Applications: 125
- 111 Using strip lead frame
Patents: 498
Patent Applications: 64
- 112 And encapsulating
Patents: 774
Patent Applications: 105
- 113 Substrate dicing
Patents: 1279
Patent Applications: 758
- 114 Utilizing a coating to perfect the dicing
Patents: 407
Patent Applications: 157
- 115 Including contaminant removal or mitigation
Patents: 190
Patent Applications: 38
- 116 Having light transmissive window
Patents: 244
Patent Applications: 68
- 117 Incorporating resilient component (e.g., spring, etc.)
Patents: 272
Patent Applications: 71
- 118 Including adhesive bonding step
Patents: 1707
Patent Applications: 670
- 119 Electrically conductive adhesive
Patents: 470
Patent Applications: 125
- 120 With vibration step
Patents: 86
Patent Applications: 34
- 121 Metallic housing or support
Patents: 572
Patent Applications: 538
- 122 Possessing thermal dissipation structure (i.e., heat sink)
Patents: 960
Patent Applications: 491
- 123 Lead frame
Patents: 1534
Patent Applications: 856
- 124 And encapsulating
Patents: 928
Patent Applications: 559
- 125 Insulative housing or support
Patents: 1063
Patent Applications: 339
- 126 And encapsulating
Patents: 922
Patent Applications: 203
- 127 Encapsulating
Patents: 1523
Patent Applications: 737
- 128 MAKING DEVICE ARRAY AND SELECTIVELY INTERCONNECTING
Patents: 608
Patent Applications: 358
- 129 With electrical circuit layout
Patents: 402
Patent Applications: 197
- 130 Rendering selected devices operable or inoperable
Patents: 212
Patent Applications: 18
- 131 Using structure alterable to conductive state (i.e., antifuse)
Patents: 295
Patent Applications: 56
- 132 Using structure alterable to nonconductive state (i.e., fuse)
Patents: 447
Patent Applications: 93
- 133 MAKING REGENERATIVE-TYPE SWITCHING DEVICE (E.G., SCR, IGBT, THYRISTOR, ETC.)
Patents: 263
Patent Applications: 55
- 134 Bidirectional rectifier with control electrode (e.g., triac, diac, etc.)
Patents: 54
Patent Applications: 9
- 135 Having field effect structure
Patents: 155
Patent Applications: 93
- 136 Junction gate
Patents: 23
Patent Applications: 3
- 137 Vertical channel
Patents: 106
Patent Applications: 6
- 138 Vertical channel
Patents: 321
Patent Applications: 77
- 139 Altering electrical characteristic
Patents: 82
Patent Applications: 10
- 140 Having structure increasing breakdown voltage (e.g., guard ring, field plate, etc.)
Patents: 160
Patent Applications: 26
- 141 MAKING CONDUCTIVITY MODULATION DEVICE (E.G., UNIJUNCTION TRANSISTOR, DOUBLE BASE DIODE, CONDUCTIVITY-MODULATED TRANSISTOR, ETC.)
Patents: 82
Patent Applications: 18
- 142 MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS
Patents: 385
Patent Applications: 156
- 143 Gettering of semiconductor substrate
Patents: 158
Patent Applications: 11
- 144 Charge transfer device (e.g., CCD, etc.)
Patents: 154
Patent Applications: 19
- 145 Having additional electrical device
Patents: 55
Patent Applications: 1
- 146 Majority signal carrier (e.g., buried or bulk channel, peristaltic, etc.)
Patents: 63
Patent Applications: 2
- 147 Changing width or direction of channel (e.g., meandering channel, etc.)
Patents: 44
Patent Applications: 5
- 148 Substantially incomplete signal charge transfer (e.g., bucket brigade, etc.)
Patents: 42
Patent Applications: 2
- 149 On insulating substrate or layer (e.g., TFT, etc.)
Patents: 2449
Patent Applications: 802
- 150 Specified crystallographic orientation
Patents: 371
Patent Applications: 63
- 151 Having insulated gate
Patents: 1792
Patent Applications: 1090
- 152 Combined with electrical device not on insulating substrate or layer
Patents: 354
Patent Applications: 69
- 153 Complementary field effect transistors
Patents: 344
Patent Applications: 50
- 154 Complementary field effect transistors
Patents: 534
Patent Applications: 146
- 155 And additional electrical device on insulating substrate or layer
Patents: 500
Patent Applications: 183
- 156 Vertical channel
Patents: 263
Patent Applications: 52
- 157 Plural gate electrodes (e.g., dual gate, etc.)
Patents: 527
Patent Applications: 182
- 158 Inverted transistor structure
Patents: 788
Patent Applications: 537
- 159 Source-to-gate or drain-to-gate overlap
Patents: 182
Patent Applications: 13
- 160 Utilizing backside irradiation
Patents: 213
Patent Applications: 50
- 161 Including source or drain electrode formation prior to semiconductor layer formation (i.e., staggered electrodes)
Patents: 219
Patent Applications: 32
- 162 Introduction of nondopant into semiconductor layer
Patents: 439
Patent Applications: 23
- 163 Adjusting channel dimension (e.g., providing lightly doped source or drain region, etc.)
Patents: 460
Patent Applications: 71
- 164 Semiconductor islands formed upon insulating substrate or layer (e.g., mesa formation, etc.)
Patents: 708
Patent Applications: 171
- 165 Including differential oxidation
Patents: 109
Patent Applications: 9
- 166 Including recrystallization step
Patents: 1447
Patent Applications: 348
- 167 Having Schottky gate (e.g., MESFET, HEMT, etc.)
Patents: 330
Patent Applications: 72
- 168 Specified crystallographic orientation
Patents: 26
Patent Applications: 4
- 169 Complementary Schottky gate field effect transistors
Patents: 40
Patent Applications: 2
- 170 And bipolar device
Patents: 38
Patent Applications: 4
- 171 And passive electrical device (e.g., resistor, capacitor, etc.)
Patents: 65
Patent Applications: 11
- 172 Having heterojunction (e.g., HEMT, MODFET, etc.)
Patents: 383
Patent Applications: 204
- 173 Vertical channel
Patents: 77
Patent Applications: 12
- 174 Doping of semiconductive channel region beneath gate (e.g., threshold voltage adjustment, etc.)
Patents: 139
Patent Applications: 7
- 175 Buried channel
Patents: 42
Patent Applications: 4
- 176 Plural gate electrodes (e.g., dual gate, etc.)
Patents: 107
Patent Applications: 11
- 177 Closed or loop gate
Patents: 11
Patent Applications: 1
- 178 Elemental semiconductor
Patents: 24
Patent Applications: 0
- 179 Asymmetric
Patents: 79
Patent Applications: 5
- 180 Self-aligned
Patents: 98
Patent Applications: 10
- 181 Doping of semiconductive region
Patents: 118
Patent Applications: 3
- 182 T-gate
Patents: 147
Patent Applications: 15
- 183 Dummy gate
Patents: 294
Patent Applications: 24
- 184 Utilizing gate sidewall structure
Patents: 140
Patent Applications: 32
- 185 Multiple doping steps
Patents: 53
Patent Applications: 12
- 186 Having junction gate (e.g., JFET, SIT, etc.)
Patents: 137
Patent Applications: 70
- 187 Specified crystallographic orientation
Patents: 26
Patent Applications: 14
- 188 Complementary junction gate field effect transistors
Patents: 61
Patent Applications: 11
- 189 And bipolar transistor
Patents: 58
Patent Applications: 7
- 190 And passive device (e.g., resistor, capacitor, etc.)
Patents: 50
Patent Applications: 12
- 191 Having heterojunction
Patents: 78
Patent Applications: 31
- 192 Vertical channel
Patents: 114
Patent Applications: 34
- 193 Multiple parallel current paths (e.g., grid gate, etc.)
Patents: 94
Patent Applications: 6
- 194 Doping of semiconductive channel region beneath gate (e.g., threshold voltage adjustment, etc.)
Patents: 101
Patent Applications: 20
- 195 Plural gate electrodes
Patents: 119
Patent Applications: 23
- 196 Including isolation structure
Patents: 83
Patent Applications: 16
- 197 Having insulated gate (e.g., IGFET, MISFET, MOSFET, etc.)
Patents: 1904
Patent Applications: 1200
- 198 Specified crystallographic orientation
Patents: 158
Patent Applications: 95
- 199 Complementary insulated gate field effect transistors (i.e., CMOS)
Patents: 1558
Patent Applications: 681
- 200 And additional electrical device
Patents: 743
Patent Applications: 108
- 201 Including insulated gate field effect transistor having gate surrounded by dielectric (i.e., floating gate)
Patents: 625
Patent Applications: 105
- 202 Including bipolar transistor (i.e., BiCMOS)
Patents: 461
Patent Applications: 93
- 203 Complementary bipolar transistors
Patents: 159
Patent Applications: 10
- 204 Lateral bipolar transistor
Patents: 91
Patent Applications: 10
- 205 Plural bipolar transistors of differing electrical characteristics
Patents: 63
Patent Applications: 7
- 206 Vertical channel insulated gate field effect transistor
Patents: 138
Patent Applications: 10
- 207 Including isolation structure
Patents: 294
Patent Applications: 54
- 208 Isolation by PN junction only
Patents: 62
Patent Applications: 3
- 209 Including additional vertical channel insulated gate field effect transistor
Patents: 82
Patent Applications: 11
- 210 Including passive device (e.g., resistor, capacitor, etc.)
Patents: 469
Patent Applications: 62
- 211 Having gate surrounded by dielectric (i.e., floating gate)
Patents: 373
Patent Applications: 107
- 212 Vertical channel
Patents: 291
Patent Applications: 63
- 213 Common active region
Patents: 62
Patent Applications: 17
- 214 Having underpass or crossunder
Patents: 41
Patent Applications: 3
- 215 Having fuse or integral short
Patents: 121
Patent Applications: 11
- 216 Gate insulator structure constructed of diverse dielectrics (e.g., MNOS, etc.) or of nonsilicon compound
Patents: 546
Patent Applications: 205
- 217 Doping of semiconductor channel region beneath gate insulator (e.g., threshold voltage adjustment, etc.)
Patents: 563
Patent Applications: 47
- 218 Including isolation structure
Patents: 259
Patent Applications: 97
- 219 Total dielectric isolation
Patents: 108
Patent Applications: 23
- 220 Isolation by PN junction only
Patents: 114
Patent Applications: 7
- 221 Dielectric isolation formed by grooving and refilling with dielectric material
Patents: 443
Patent Applications: 103
- 222 With epitaxial semiconductor layer formation
Patents: 170
Patent Applications: 63
- 223 Having well structure of opposite conductivity type
Patents: 164
Patent Applications: 28
- 224 Plural wells
Patents: 256
Patent Applications: 24
- 225 Recessed oxide formed by localized oxidation (i.e., LOCOS)
Patents: 191
Patent Applications: 11
- 226 With epitaxial semiconductor layer formation
Patents: 108
Patent Applications: 2
- 227 Having well structure of opposite conductivity type
Patents: 270
Patent Applications: 14
- 228 Plural wells
Patents: 365
Patent Applications: 14
- 229 Self-aligned
Patents: 204
Patent Applications: 79
- 230 Utilizing gate sidewall structure
Patents: 344
Patent Applications: 69
- 231 Plural doping steps
Patents: 761
Patent Applications: 125
- 232 Plural doping steps
Patents: 413
Patent Applications: 87
- 233 And contact formation
Patents: 388
Patent Applications: 81
- 234 Including bipolar transistor (i.e., BiMOS)
Patents: 412
Patent Applications: 58
- 235 Heterojunction bipolar transistor
Patents: 152
Patent Applications: 32
- 236 Lateral bipolar transistor
Patents: 68
Patent Applications: 6
- 237 Including diode
Patents: 332
Patent Applications: 101
- 238 Including passive device (e.g., resistor, capacitor, etc.)
Patents: 1649
Patent Applications: 309
- 239 Capacitor
Patents: 1384
Patent Applications: 267
- 240 Having high dielectric constant insulator (e.g., Ta2O5, etc.)
Patents: 1659
Patent Applications: 184
- 241 And additional field effect transistor (e.g., sense or access transistor, etc.)
Patents: 879
Patent Applications: 55
- 242 Including transistor formed on trench sidewalls
Patents: 300
Patent Applications: 14
- 243 Trench capacitor
Patents: 1064
Patent Applications: 277
- 244 Utilizing stacked capacitor structure (e.g., stacked trench, buried stacked capacitor, etc.)
Patents: 552
Patent Applications: 92
- 245 With epitaxial layer formed over the trench
Patents: 127
Patent Applications: 8
- 246 Including doping of trench surfaces
Patents: 247
Patent Applications: 20
- 247 Multiple doping steps
Patents: 91
Patent Applications: 3
- 248 Including isolation means formed in trench
Patents: 257
Patent Applications: 23
- 249 Doping by outdiffusion from a dopant source layer (e.g., doped oxide, etc.)
Patents: 179
Patent Applications: 7
- 250 Planar capacitor
Patents: 483
Patent Applications: 76
- 251 Including doping of semiconductive region
Patents: 147
Patent Applications: 10
- 252 Multiple doping steps
Patents: 94
Patent Applications: 4
- 253 Stacked capacitor
Patents: 2928
Patent Applications: 336
- 254 Including selectively removing material to undercut and expose storage node layer
Patents: 727
Patent Applications: 28
- 255 Including texturizing storage node layer
Patents: 811
Patent Applications: 53
- 256 Contacts formed by selective growth or deposition
Patents: 318
Patent Applications: 30
- 257 Having additional gate electrode surrounded by dielectric (i.e., floating gate)
Patents: 2979
Patent Applications: 1088
- 258 Including additional field effect transistor (e.g., sense or access transistor, etc.)
Patents: 1169
Patent Applications: 165
- 259 Including forming gate electrode in trench or recess in substrate
Patents: 936
Patent Applications: 171
- 260 Textured surface of gate insulator or gate electrode
Patents: 248
Patent Applications: 40
- 261 Multiple interelectrode dielectrics or nonsilicon compound gate insulator
Patents: 792
Patent Applications: 321
- 262 Including elongated source or drain region disposed under thick oxide regions (e.g., buried or diffused bitline, etc.)
Patents: 343
Patent Applications: 29
- 263 Tunneling insulator
Patents: 304
Patent Applications: 52
- 264 Tunneling insulator
Patents: 1016
Patent Applications: 305
- 265 Oxidizing sidewall of gate electrode
Patents: 286
Patent Applications: 33
- 266 Having additional, nonmemory control electrode or channel portion (e.g., for accessing field effect transistor structure, etc.)
Patents: 684
Patent Applications: 161
- 267 Including forming gate electrode as conductive sidewall spacer to another electrode
Patents: 407
Patent Applications: 45
- 268 Vertical channel
Patents: 943
Patent Applications: 393
- 269 Utilizing epitaxial semiconductor layer grown through an opening in an insulating layer
Patents: 170
Patent Applications: 38
- 270 Gate electrode in trench or recess in semiconductor substrate
Patents: 1311
Patent Applications: 787
- 271 V-gate
Patents: 137
Patent Applications: 6
- 272 Totally embedded in semiconductive layers
Patents: 155
Patent Applications: 44
- 273 Having integral short of source and base regions
Patents: 149
Patent Applications: 7
- 274 Short formed in recess in substrate
Patents: 67
Patent Applications: 4
- 275 Making plural insulated gate field effect transistors of differing electrical characteristics
Patents: 1324
Patent Applications: 352
- 276 Introducing a dopant into the channel region of selected transistors
Patents: 371
Patent Applications: 49
- 277 Including forming overlapping gate electrodes
Patents: 47
Patent Applications: 6
- 278 After formation of source or drain regions and gate electrode (e.g., late programming, encoding, etc.)
Patents: 289
Patent Applications: 48
- 279 Making plural insulated gate field effect transistors having common active region
Patents: 545
Patent Applications: 85
- 280 Having underpass or crossunder
Patents: 56
Patent Applications: 4
- 281 Having fuse or integral short
Patents: 214
Patent Applications: 26
- 282 Buried channel
Patents: 193
Patent Applications: 61
- 283 Plural gate electrodes (e.g., dual gate, etc.)
Patents: 501
Patent Applications: 261
- 284 Closed or loop gate
Patents: 120
Patent Applications: 75
- 285 Utilizing compound semiconductor
Patents: 355
Patent Applications: 355
- 286 Asymmetric
Patents: 808
Patent Applications: 244
- 287 Gate insulator structure constructed of diverse dielectrics (e.g., MNOS, etc.) or of nonsilicon compound
Patents: 1117
Patent Applications: 578
- 288 Having step of storing electrical charge in gate dielectric
Patents: 180
Patent Applications: 35
- 289 Doping of semiconductive channel region beneath gate insulator (e.g., adjusting threshold voltage, etc.)
Patents: 701
Patent Applications: 143
- 290 After formation of source or drain regions and gate electrode
Patents: 186
Patent Applications: 40
- 291 Using channel conductivity dopant of opposite type as that of source and drain
Patents: 466
Patent Applications: 44
- 292 Direct application of electrical current
Patents: 43
Patent Applications: 8
- 293 Fusion or solidification of semiconductor region
Patents: 28
Patent Applications: 14
- 294 Including isolation structure
Patents: 402
Patent Applications: 202
- 295 Total dielectric isolation
Patents: 138
Patent Applications: 17
- 296 Dielectric isolation formed by grooving and refilling with dielectric material
Patents: 962
Patent Applications: 274
- 297 Recessed oxide formed by localized oxidation (i.e., LOCOS)
Patents: 590
Patent Applications: 48
- 298 Doping region beneath recessed oxide (e.g., to form chanstop, etc.)
Patents: 304
Patent Applications: 13
- 299 Self-aligned
Patents: 705
Patent Applications: 264
- 300 Having elevated source or drain (e.g., epitaxially formed source or drain, etc.)
Patents: 903
Patent Applications: 276
- 301 Source or drain doping
Patents: 1387
Patent Applications: 344
- 302 Oblique implantation
Patents: 576
Patent Applications: 100
- 303 Utilizing gate sidewall structure
Patents: 1559
Patent Applications: 305
- 304 Conductive sidewall component
Patents: 295
Patent Applications: 12
- 305 Plural doping steps
Patents: 1895
Patent Applications: 299
- 306 Plural doping steps
Patents: 585
Patent Applications: 183
- 307 Using same conductivity-type dopant
Patents: 444
Patent Applications: 49
- 308 Radiation or energy treatment modifying properties of semiconductor regions of substrate (e.g., thermal, corpuscular, electromagnetic, etc.)
Patents: 456
Patent Applications: 101
- 309 FORMING BIPOLAR TRANSISTOR BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS
Patents: 484
Patent Applications: 135
- 310 Gettering of semiconductor substrate
Patents: 59
Patent Applications: 7
- 311 On insulating substrate or layer (i.e., SOI type)
Patents: 352
Patent Applications: 63
- 312 Having heterojunction
Patents: 358
Patent Applications: 79
- 313 Complementary bipolar transistors
Patents: 108
Patent Applications: 10
- 314 And additional electrical device
Patents: 86
Patent Applications: 13
- 315 Forming inverted transistor structure
Patents: 60
Patent Applications: 6
- 316 Forming lateral transistor structure
Patents: 61
Patent Applications: 10
- 317 Wide bandgap emitter
Patents: 95
Patent Applications: 8
- 318 Including isolation structure
Patents: 124
Patent Applications: 24
- 319 Air isolation (e.g., mesa, etc.)
Patents: 79
Patent Applications: 4
- 320 Self-aligned
Patents: 175
Patent Applications: 12
- 321 Utilizing dummy emitter
Patents: 57
Patent Applications: 6
- 322 Complementary bipolar transistors
Patents: 164
Patent Applications: 17
- 323 Having common active region (i.e., integrated injection logic (I2L), etc.)
Patents: 42
Patent Applications: 0
- 324 Including additional electrical device
Patents: 44
Patent Applications: 1
- 325 Having lateral bipolar transistor
Patents: 82
Patent Applications: 2
- 326 Including additional electrical device
Patents: 44
Patent Applications: 2
- 327 Having lateral bipolar transistor
Patents: 53
Patent Applications: 2
- 328 Including diode
Patents: 180
Patent Applications: 19
- 329 Including passive device (e.g., resistor, capacitor, etc.)
Patents: 133
Patent Applications: 25
- 330 Resistor
Patents: 102
Patent Applications: 18
- 331 Having same doping as emitter or collector
Patents: 37
Patent Applications: 0
- 332 Lightly doped junction isolated resistor
Patents: 38
Patent Applications: 5
- 333 Having fuse or integral short
Patents: 64
Patent Applications: 7
- 334 Forming inverted transistor structure
Patents: 38
Patent Applications: 1
- 335 Forming lateral transistor structure
Patents: 83
Patent Applications: 6
- 336 Combined with vertical bipolar transistor
Patents: 52
Patent Applications: 0
- 337 Active region formed along groove or exposed edge in semiconductor
Patents: 58
Patent Applications: 5
- 338 Having multiple emitter or collector structure
Patents: 36
Patent Applications: 4
- 339 Self-aligned
Patents: 90
Patent Applications: 4
- 340 Making plural bipolar transistors of differing electrical characteristics
Patents: 102
Patent Applications: 6
- 341 Using epitaxial lateral overgrowth
Patents: 124
Patent Applications: 20
- 342 Having multiple emitter or collector structure
Patents: 68
Patent Applications: 8
- 343 Mesa or stacked emitter
Patents: 112
Patent Applications: 18
- 344 Washed emitter
Patents: 16
Patent Applications: 2
- 345 Walled emitter
Patents: 75
Patent Applications: 10
- 346 Emitter dip prevention or utilization
Patents: 8
Patent Applications: 0
- 347 Permeable or metal base
Patents: 34
Patent Applications: 2
- 348 Sidewall base contact
Patents: 92
Patent Applications: 7
- 349 Pedestal base
Patents: 43
Patent Applications: 6
- 350 Forming base region of specified dopant concentration profile (e.g., inactive base region more heavily doped than active base region, etc.)
Patents: 181
Patent Applications: 24
- 351 Direct application of electrical current
Patents: 12
Patent Applications: 3
- 352 Fusion or solidification of semiconductor region
Patents: 9
Patent Applications: 1
- 353 Including isolation structure
Patents: 115
Patent Applications: 26
- 354 Having semi-insulative region
Patents: 25
Patent Applications: 0
- 355 Total dielectrical isolation
Patents: 103
Patent Applications: 1
- 356 Isolation by PN junction only
Patents: 33
Patent Applications: 2
- 357 Including epitaxial semiconductor layer formation
Patents: 121
Patent Applications: 3
- 358 Up diffusion of dopant from substrate into epitaxial layer
Patents: 101
Patent Applications: 2
- 359 Dielectric isolation formed by grooving and refilling with dielectrical material
Patents: 205
Patent Applications: 10
- 360 With epitaxial semiconductor formation in groove
Patents: 57
Patent Applications: 2
- 361 Including deposition of polysilicon or noninsulative material into groove
Patents: 131
Patent Applications: 8
- 362 Recessed oxide by localized oxidation (i.e., LOCOS)
Patents: 130
Patent Applications: 6
- 363 With epitaxial semiconductor layer formation
Patents: 155
Patent Applications: 4
- 364 Self-aligned
Patents: 119
Patent Applications: 7
- 365 Forming active region from adjacent doped polycrystalline or amorphous semiconductor
Patents: 253
Patent Applications: 9
- 366 Having sidewall
Patents: 209
Patent Applications: 8
- 367 Including conductive component
Patents: 71
Patent Applications: 1
- 368 Simultaneously outdiffusing plural dopants from polysilicon or amorphous semiconductor
Patents: 100
Patent Applications: 3
- 369 Dopant implantation or diffusion
Patents: 173
Patent Applications: 35
- 370 Forming buried region (e.g., implanting through insulating layer, etc.)
Patents: 191
Patent Applications: 6
- 371 Simultaneous introduction of plural dopants
Patents: 47
Patent Applications: 0
- 372 Plural doping steps
Patents: 96
Patent Applications: 16
- 373 Multiple ion implantation steps
Patents: 134
Patent Applications: 6
- 374 Using same conductivity-type dopant
Patents: 89
Patent Applications: 1
- 375 Forming partially overlapping regions
Patents: 75
Patent Applications: 0
- 376 Single dopant forming regions of different depth or concentrations
Patents: 72
Patent Applications: 0
- 377 Through same mask opening
Patents: 62
Patent Applications: 7
- 378 Radiation or energy treatment modifying properties of semiconductor regions of substrate (e.g., thermal, corpuscular, electromagnetic, etc.)
Patents: 92
Patent Applications: 14
- 379 VOLTAGE VARIABLE CAPACITANCE DEVICE MANUFACTURE (E.G., VARACTOR, ETC.)
Patents: 110
Patent Applications: 73
- 380 AVALANCHE DIODE MANUFACTURE (E.G., IMPATT, TRAPPAT, ETC.)
Patents: 136
Patent Applications: 54
- 381 MAKING PASSIVE DEVICE (E.G., RESISTOR, CAPACITOR, ETC.)
Patents: 921
Patent Applications: 559
- 382 Resistor
Patents: 396
Patent Applications: 376
- 383 Lightly doped junction isolated resistor
Patents: 89
Patent Applications: 9
- 384 Deposited thin film resistor
Patents: 416
Patent Applications: 68
- 385 Altering resistivity of conductor
Patents: 306
Patent Applications: 45
- 386 Trench capacitor
Patents: 925
Patent Applications: 317
- 387 Having stacked capacitor structure (e.g., stacked trench, buried stacked capacitor, etc.)
Patents: 403
Patent Applications: 68
- 388 With epitaxial layer formed over the trench
Patents: 77
Patent Applications: 7
- 389 Including doping of trench surfaces
Patents: 157
Patent Applications: 31
- 390 Multiple doping steps
Patents: 58
Patent Applications: 3
- 391 Including isolation means formed in trench
Patents: 131
Patent Applications: 15
- 392 Doping by outdiffusion from a dopant source layer (e.g., doped oxide)
Patents: 117
Patent Applications: 7
- 393 Planar capacitor
Patents: 622
Patent Applications: 244
- 394 Including doping of semiconductive region
Patents: 103
Patent Applications: 17
- 395 Multiple doping steps
Patents: 85
Patent Applications: 5
- 396 Stacked capacitor
Patents: 2771
Patent Applications: 504
- 397 Including selectively removing material to undercut and expose storage node layer
Patents: 597
Patent Applications: 37
- 398 Including texturizing storage node layer
Patents: 877
Patent Applications: 53
- 399 Having contacts formed by selective growth or deposition
Patents: 310
Patent Applications: 52
- 400 FORMATION OF ELECTRICALLY ISOLATED LATERAL SEMICONDUCTIVE STRUCTURE
Patents: 345
Patent Applications: 180
- 401 Having substrate registration feature (e.g., alignment mark)
Patents: 766
Patent Applications: 219
- 402 And gettering of substrate
Patents: 92
Patent Applications: 7
- 403 Having semi-insulating component
Patents: 99
Patent Applications: 5
- 404 Total dielectric isolation
Patents: 364
Patent Applications: 73
- 405 And separate partially isolated semiconductor regions
Patents: 174
Patent Applications: 9
- 406 Bonding of plural semiconductive substrates
Patents: 514
Patent Applications: 60
- 407 Nondopant implantation
Patents: 287
Patent Applications: 19
- 408 With electrolytic treatment step
Patents: 43
Patent Applications: 2
- 409 Porous semiconductor formation
Patents: 183
Patent Applications: 23
- 410 Encroachment of separate locally oxidized regions
Patents: 92
Patent Applications: 2
- 411 Air isolation (e.g., beam lead supported semiconductor islands, etc.)
Patents: 162
Patent Applications: 22
- 412 Semiconductor islands formed upon insulating substrate or layer (e.g., mesa isolation, etc.)
Patents: 193
Patent Applications: 10
- 413 With epitaxial semiconductor formation
Patents: 188
Patent Applications: 20
- 414 Isolation by PN junction only
Patents: 53
Patent Applications: 28
- 415 Thermomigration
Patents: 30
Patent Applications: 1
- 416 With epitaxial semiconductor formation
Patents: 80
Patent Applications: 8
- 417 And simultaneous polycrystalline growth
Patents: 17
Patent Applications: 1
- 418 Dopant addition
Patents: 43
Patent Applications: 8
- 419 Plural doping steps
Patents: 88
Patent Applications: 4
- 420 Plural doping steps
Patents: 91
Patent Applications: 14
- 421 Having air-gap dielectric (e.g., groove, etc.)
Patents: 326
Patent Applications: 71
- 422 Enclosed cavity
Patents: 231
Patent Applications: 29
- 423 Implanting to form insulator
Patents: 216
Patent Applications: 46
- 424 Grooved and refilled with deposited dielectric material
Patents: 2053
Patent Applications: 861
- 425 Combined with formation of recessed oxide by localized oxidation
Patents: 353
Patent Applications: 112
- 426 Recessed oxide laterally extending from groove
Patents: 290
Patent Applications: 24
- 427 Refilling multiple grooves of different widths or depths
Patents: 595
Patent Applications: 113
- 428 Reflow of insulator
Patents: 59
Patent Applications: 6
- 429 And epitaxial semiconductor formation in groove
Patents: 169
Patent Applications: 61
- 430 And deposition of polysilicon or noninsulative material into groove
Patents: 427
Patent Applications: 139
- 431 Oxidation of deposited material
Patents: 237
Patent Applications: 23
- 432 Nonoxidized portions remaining in groove after oxidation
Patents: 134
Patent Applications: 7
- 433 Dopant addition
Patents: 326
Patent Applications: 73
- 434 From doped insulator in groove
Patents: 60
Patent Applications: 8
- 435 Multiple insulative layers in groove
Patents: 695
Patent Applications: 202
- 436 Reflow of insulator
Patents: 120
Patent Applications: 6
- 437 Conformal insulator formation
Patents: 452
Patent Applications: 64
- 438 Reflow of insulator
Patents: 105
Patent Applications: 15
- 439 Recessed oxide by localized oxidation (i.e., LOCOS)
Patents: 376
Patent Applications: 37
- 440 Including nondopant implantation
Patents: 120
Patent Applications: 10
- 441 With electrolytic treatment step
Patents: 25
Patent Applications: 1
- 442 With epitaxial semiconductor layer formation
Patents: 134
Patent Applications: 9
- 443 Etchback of recessed oxide
Patents: 225
Patent Applications: 14
- 444 Preliminary etching of groove
Patents: 171
Patent Applications: 9
- 445 Masking of groove sidewall
Patents: 168
Patent Applications: 9
- 446 Polysilicon containing sidewall
Patents: 63
Patent Applications: 1
- 447 Dopant addition
Patents: 69
Patent Applications: 1
- 448 Utilizing oxidation mask having polysilicon component
Patents: 177
Patent Applications: 6
- 449 Dopant addition
Patents: 147
Patent Applications: 8
- 450 Implanting through recessed oxide
Patents: 131
Patent Applications: 7
- 451 Plural doping steps
Patents: 149
Patent Applications: 2
- 452 Plural oxidation steps to form recessed oxide
Patents: 130
Patent Applications: 8
- 453 And electrical conductor formation (i.e., metallization)
Patents: 200
Patent Applications: 2
- 454 Field plate electrode
Patents: 110
Patent Applications: 27
- 455 BONDING OF PLURAL SEMICONDUCTOR SUBSTRATES
Patents: 1590
Patent Applications: 621
- 456 Having enclosed cavity
Patents: 361
Patent Applications: 44
- 457 Warping of semiconductor substrate
Patents: 134
Patent Applications: 23
- 458 Subsequent separation into plural bodies (e.g., delaminating, dicing, etc.)
Patents: 1286
Patent Applications: 762
- 459 Thinning of semiconductor substrate
Patents: 1232
Patent Applications: 366
- 460 SEMICONDUCTOR SUBSTRATE DICING
Patents: 992
Patent Applications: 417
- 461 Beam lead formation
Patents: 88
Patent Applications: 4
- 462 Having specified scribe region structure (e.g., alignment mark, plural grooves, etc.)
Patents: 952
Patent Applications: 357
- 463 By electromagnetic irradiation (e.g., electron, laser, etc.)
Patents: 249
Patent Applications: 213
- 464 With attachment to temporary support or carrier
Patents: 693
Patent Applications: 253
- 465 Having a perfecting coating
Patents: 244
Patent Applications: 65
- 466 DIRECT APPLICATION OF ELECTRICAL CURRENT
Patents: 208
Patent Applications: 66
- 467 To alter conductivity of fuse or antifuse element
Patents: 252
Patent Applications: 55
- 468 Electromigration
Patents: 64
Patent Applications: 18
- 469 Utilizing pulsed current
Patents: 29
Patent Applications: 7
- 470 Fusion of semiconductor region
Patents: 20
Patent Applications: 2
- 471 GETTERING OF SUBSTRATE
Patents: 345
Patent Applications: 74
- 472 By vibrating or impacting
Patents: 37
Patent Applications: 3
- 473 By implanting or irradiating
Patents: 240
Patent Applications: 77
- 474 Ionized radiation (e.g., corpuscular or plasma treatment, etc.)
Patents: 139
Patent Applications: 16
- 475 Hydrogen plasma (i.e., hydrogenization)
Patents: 150
Patent Applications: 19
- 476 By layers which are coated, contacted, or diffused
Patents: 292
Patent Applications: 61
- 477 By vapor phase surface reaction
Patents: 113
Patent Applications: 16
- 478 FORMATION OF SEMICONDUCTIVE ACTIVE REGION ON ANY SUBSTRATE (E.G., FLUID GROWTH, DEPOSITION)
Patents: 736
Patent Applications: 1539
- 479 On insulating substrate or layer
Patents: 860
Patent Applications: 490
- 480 Including implantation of ion which reacts with semiconductor substrate to form insulating layer
Patents: 160
Patent Applications: 30
- 481 Utilizing epitaxial lateral overgrowth
Patents: 434
Patent Applications: 162
- 482 Amorphous semiconductor
Patents: 401
Patent Applications: 186
- 483 Compound semiconductor
Patents: 249
Patent Applications: 197
- 484 Running length (e.g., sheet, strip, etc.)
Patents: 78
Patent Applications: 3
- 485 Deposition utilizing plasma (e.g., glow discharge, etc.)
Patents: 343
Patent Applications: 34
- 486 And subsequent crystallization
Patents: 779
Patent Applications: 222
- 487 Utilizing wave energy (e.g., laser, electron beam, etc.)
Patents: 766
Patent Applications: 246
- 488 Polycrystalline semiconductor
Patents: 513
Patent Applications: 173
- 489 Simultaneous single crystal formation
Patents: 165
Patent Applications: 16
- 490 Running length (e.g., sheet, strip, etc.)
Patents: 57
Patent Applications: 6
- 491 And subsequent doping of polycrystalline semiconductor
Patents: 96
Patent Applications: 20
- 492 Fluid growth step with preceding and subsequent diverse operation
Patents: 215
Patent Applications: 67
- 493 Plural fluid growth steps with intervening diverse operation
Patents: 100
Patent Applications: 47
- 494 Differential etching
Patents: 129
Patent Applications: 24
- 495 Doping of semiconductor
Patents: 52
Patent Applications: 15
- 496 Coating of semiconductive substrate with nonsemiconductive material
Patents: 59
Patent Applications: 17
- 497 Fluid growth from liquid combined with preceding diverse operation
Patents: 66
Patent Applications: 26
- 498 Differential etching
Patents: 29
Patent Applications: 2
- 499 Doping of semiconductor
Patents: 31
Patent Applications: 8
- 500 Fluid growth from liquid combined with subsequent diverse operation
Patents: 62
Patent Applications: 21
- 501 Doping of semiconductor
Patents: 41
Patent Applications: 9
- 502 Heat treatment
Patents: 85
Patent Applications: 36
- 503 Fluid growth from gaseous state combined with preceding diverse operation
Patents: 200
Patent Applications: 73
- 504 Differential etching
Patents: 104
Patent Applications: 20
- 505 Doping of semiconductor
Patents: 84
Patent Applications: 12
- 506 Ion implantation
Patents: 102
Patent Applications: 9
- 507 Fluid growth from gaseous state combined with subsequent diverse operation
Patents: 265
Patent Applications: 103
- 508 Doping of semiconductor
Patents: 117
Patent Applications: 51
- 509 Heat treatment
Patents: 207
Patent Applications: 73
- 510 INTRODUCTION OF CONDUCTIVITY MODIFYING DOPANT INTO SEMICONDUCTIVE MATERIAL
Patents: 296
Patent Applications: 156
- 511 Ordering or disordering
Patents: 33
Patent Applications: 12
- 512 Involving nuclear transmutation doping
Patents: 37
Patent Applications: 0
- 513 Plasma (e.g., glow discharge, etc.)
Patents: 263
Patent Applications: 126
- 514 Ion implantation of dopant into semiconductor region
Patents: 620
Patent Applications: 279
- 515 Ionized molecules
Patents: 139
Patent Applications: 23
- 516 Including charge neutralization
Patents: 68
Patent Applications: 12
- 517 Of semiconductor layer on insulating substrate or layer
Patents: 266
Patent Applications: 46
- 518 Of compound semiconductor
Patents: 131
Patent Applications: 20
- 519 Including multiple implantation steps
Patents: 130
Patent Applications: 16
- 520 Providing nondopant ion (e.g., proton, etc.)
Patents: 145
Patent Applications: 19
- 521 Using same conductivity-type dopant
Patents: 39
Patent Applications: 0
- 522 Including heat treatment
Patents: 251
Patent Applications: 32
- 523 And contact formation (i.e., metallization)
Patents: 83
Patent Applications: 5
- 524 Into grooved semiconductor substrate region
Patents: 250
Patent Applications: 30
- 525 Using oblique beam
Patents: 326
Patent Applications: 59
- 526 Forming buried region
Patents: 402
Patent Applications: 29
- 527 Including multiple implantation steps
Patents: 448
Patent Applications: 152
- 528 Providing nondopant ion (e.g., proton, etc.)
Patents: 456
Patent Applications: 56
- 529 Using same conductivity-type dopant
Patents: 208
Patent Applications: 19
- 530 Including heat treatment
Patents: 430
Patent Applications: 158
- 531 Using shadow mask
Patents: 79
Patent Applications: 23
- 532 Into polycrystalline region
Patents: 220
Patent Applications: 12
- 533 And contact formation (i.e., metallization)
Patents: 249
Patent Applications: 24
- 534 Rectifying contact (i.e., Schottky contact)
Patents: 43
Patent Applications: 8
- 535 By application of corpuscular or electromagnetic radiation (e.g., electron, laser, etc.)
Patents: 216
Patent Applications: 30
- 536 Recoil implantation
Patents: 12
Patent Applications: 0
- 537 Fusing dopant with substrate (i.e., alloy junction)
Patents: 37
Patent Applications: 6
- 538 Using additional material to improve wettability or flow characteristics (e.g., flux, etc.)
Patents: 17
Patent Applications: 1
- 539 Application of pressure to material during fusion
Patents: 6
Patent Applications: 0
- 540 Including plural controlled heating or cooling steps or nonuniform heating
Patents: 97
Patent Applications: 4
- 541 Including diffusion after fusing step
Patents: 26
Patent Applications: 1
- 542 Diffusing a dopant
Patents: 204
Patent Applications: 108
- 543 To control carrier lifetime (i.e., deep level dopant)
Patents: 61
Patent Applications: 2
- 544 To solid-state solubility concentration
Patents: 12
Patent Applications: 4
- 545 Forming partially overlapping regions
Patents: 94
Patent Applications: 2
- 546 Plural dopants in same region (e.g., through same mask opening, etc.)
Patents: 140
Patent Applications: 8
- 547 Simultaneously
Patents: 53
Patent Applications: 3
- 548 Plural dopants simultaneously in plural regions
Patents: 84
Patent Applications: 7
- 549 Single dopant forming plural diverse regions (e.g., forming regions of different concentrations or of different depths, etc.)
Patents: 139
Patent Applications: 5
- 550 Nonuniform heating
Patents: 21
Patent Applications: 5
- 551 Using multiple layered mask
Patents: 86
Patent Applications: 14
- 552 Having plural predetermined openings in master mask
Patents: 57
Patent Applications: 2
- 553 Using metal mask
Patents: 15
Patent Applications: 1
- 554 Outwardly
Patents: 49
Patent Applications: 1
- 555 Laterally under mask opening
Patents: 69
Patent Applications: 0
- 556 Edge diffusion by using edge portion of structure other than masking layer to mask
Patents: 39
Patent Applications: 3
- 557 From melt
Patents: 33
Patent Applications: 3
- 558 From solid dopant source in contact with semiconductor region
Patents: 238
Patent Applications: 56
- 559 Using capping layer over dopant source to prevent out-diffusion of dopant
Patents: 88
Patent Applications: 4
- 560 Plural diffusion stages
Patents: 62
Patent Applications: 5
- 561 Dopant source within trench or groove
Patents: 102
Patent Applications: 7
- 562 Organic source
Patents: 20
Patent Applications: 3
- 563 Glassy source or doped oxide
Patents: 183
Patent Applications: 5
- 564 Polycrystalline semiconductor source
Patents: 219
Patent Applications: 7
- 565 From vapor phase
Patents: 95
Patent Applications: 18
- 566 Plural diffusion stages
Patents: 34
Patent Applications: 0
- 567 Solid source in operative relation with semiconductor region
Patents: 61
Patent Applications: 1
- 568 In capsule-type enclosure
Patents: 29
Patent Applications: 0
- 569 Into compound semiconductor region
Patents: 51
Patent Applications: 4
- 570 FORMING SCHOTTKY JUNCTION (I.E., SEMICONDUCTOR-CONDUCTOR RECTIFYING JUNCTION CONTACT)
Patents: 227
Patent Applications: 77
- 571 Combined with formation of ohmic contact to semiconductor region
Patents: 405
Patent Applications: 38
- 572 Compound semiconductor
Patents: 126
Patent Applications: 25
- 573 Multilayer electrode
Patents: 93
Patent Applications: 7
- 574 T-shaped electrode
Patents: 113
Patent Applications: 2
- 575 Using platinum group metal (i.e., platinum (Pt), palladium (Pd), rodium (Rh), ruthenium (Ru), iridium (Ir), osmium (Os), or alloy thereof)
Patents: 43
Patent Applications: 6
- 576 Into grooved or recessed semiconductor region
Patents: 91
Patent Applications: 10
- 577 Utilizing lift-off
Patents: 73
Patent Applications: 2
- 578 Forming electrode of specified shape (e.g., slanted, etc.)
Patents: 47
Patent Applications: 4
- 579 T-shaped electrode
Patents: 96
Patent Applications: 7
- 580 Using platinum group metal (i.e., platinum (Pt), palladium (Pd), rhodium (Rh), ruthenium (Ru), iridium (Ir), osmium (Os), or alloy thereof)
Patents: 62
Patent Applications: 11
- 581 Silicide
Patents: 141
Patent Applications: 19
- 582 Using refractory group metal (i.e., titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), or alloy thereof)
Patents: 115
Patent Applications: 9
- 583 Silicide
Patents: 143
Patent Applications: 24
- 584 COATING WITH ELECTRICALLY OR THERMALLY CONDUCTIVE MATERIAL
Patents: 580
Patent Applications: 258
- 585 Insulated gate formation
Patents: 1325
Patent Applications: 670
- 586 Combined with formation of ohmic contact to semiconductor region
Patents: 1222
Patent Applications: 311
- 587 Forming array of gate electrodes
Patents: 521
Patent Applications: 197
- 588 Plural gate levels
Patents: 258
Patent Applications: 39
- 589 Recessed into semiconductor substrate
Patents: 551
Patent Applications: 297
- 590 Compound semiconductor
Patents: 111
Patent Applications: 50
- 591 Gate insulator structure constructed of plural layers or nonsilicon containing compound
Patents: 729
Patent Applications: 742
- 592 Possessing plural conductive layers (e.g., polycide)
Patents: 1594
Patent Applications: 402
- 593 Separated by insulator (i.e., floating gate)
Patents: 592
Patent Applications: 245
- 594 Tunnelling dielectric layer
Patents: 327
Patent Applications: 127
- 595 Having sidewall structure
Patents: 970
Patent Applications: 192
- 596 Portion of sidewall structure is conductive
Patents: 287
Patent Applications: 26
- 597 To form ohmic contact to semiconductive material
Patents: 1080
Patent Applications: 494
- 598 Selectively interconnecting (e.g., customization, wafer scale integration, etc.)
Patents: 399
Patent Applications: 55
- 599 With electrical circuit layout
Patents: 232
Patent Applications: 34
- 600 Using structure alterable to conductive state (i.e., antifuse)
Patents: 301
Patent Applications: 73
- 601 Using structure alterable to nonconductive state (i.e., fuse)
Patents: 382
Patent Applications: 159
- 602 To compound semiconductor
Patents: 153
Patent Applications: 60
- 603 II-VI compound semiconductor
Patents: 79
Patent Applications: 12
- 604 III-V compound semiconductor
Patents: 255
Patent Applications: 55
- 605 Multilayer electrode
Patents: 144
Patent Applications: 11
- 606 Ga and As containing semiconductor
Patents: 184
Patent Applications: 20
- 607 With epitaxial conductor formation
Patents: 178
Patent Applications: 44
- 608 Oxidic conductor (e.g., indium tin oxide, etc.)
Patents: 156
Patent Applications: 55
- 609 Transparent conductor
Patents: 128
Patent Applications: 66
- 610 Conductive macromolecular conductor (including metal powder filled composition)
Patents: 101
Patent Applications: 33
- 611 Beam lead formation
Patents: 221
Patent Applications: 30
- 612 Forming solder contact or bonding pad
Patents: 1799
Patent Applications: 649
- 613 Bump electrode
Patents: 1553
Patent Applications: 710
- 614 Plural conductive layers
Patents: 889
Patent Applications: 353
- 615 Including fusion of conductor
Patents: 276
Patent Applications: 71
- 616 By transcription from auxiliary substrate
Patents: 167
Patent Applications: 14
- 617 By wire bonding
Patents: 413
Patent Applications: 164
- 618 Contacting multiple semiconductive regions (i.e., interconnects)
Patents: 1760
Patent Applications: 687
- 619 Air bridge structure
Patents: 577
Patent Applications: 104
- 620 Forming contacts of differing depths into semiconductor substrate
Patents: 343
Patent Applications: 53
- 621 Contacting diversely doped semiconductive regions (e.g., p-type and n-type regions, etc.)
Patents: 173
Patent Applications: 4
- 622 Multiple metal levels, separated by insulating layer (i.e., multiple level metallization)
Patents: 2346
Patent Applications: 677
- 623 Including organic insulating material between metal levels
Patents: 1028
Patent Applications: 138
- 624 Separating insulating layer is laminate or composite of plural insulating materials
Patents: 1687
Patent Applications: 228
- 625 At least one metallization level formed of diverse conductive layers
Patents: 479
Patent Applications: 52
- 626 Planarization
Patents: 733
Patent Applications: 83
- 627 At least one layer forms a diffusion barrier
Patents: 1314
Patent Applications: 256
- 628 Having adhesion promoting layer
Patents: 355
Patent Applications: 37
- 629 Diverse conductive layers limited to viahole/plug
Patents: 896
Patent Applications: 232
- 630 Silicide formation
Patents: 296
Patent Applications: 17
- 631 Having planarization step
Patents: 767
Patent Applications: 89
- 632 Utilizing reflow
Patents: 227
Patent Applications: 4
- 633 Simultaneously by chemical and mechanical means
Patents: 1091
Patent Applications: 100
- 634 Utilizing etch-stop layer
Patents: 541
Patent Applications: 33
- 635 Insulator formed by reaction with conductor (e.g., oxidation, etc.)
Patents: 251
Patent Applications: 7
- 636 Including use of antireflective layer
Patents: 495
Patent Applications: 52
- 637 With formation of opening (i.e., viahole) in insulative layer
Patents: 3011
Patent Applications: 828
- 638 Having viaholes of diverse width
Patents: 1129
Patent Applications: 214
- 639 Having viahole with sidewall component
Patents: 761
Patent Applications: 76
- 640 Having viahole of tapered shape
Patents: 539
Patent Applications: 57
- 641 Selective deposition
Patents: 194
Patent Applications: 12
- 642 Diverse conductors
Patents: 235
Patent Applications: 39
- 643 At least one layer forms a diffusion barrier
Patents: 1146
Patent Applications: 297
- 644 Having adhesion promoting layer
Patents: 305
Patent Applications: 37
- 645 Having planarization step
Patents: 296
Patent Applications: 20
- 646 Utilizing reflow
Patents: 98
Patent Applications: 2
- 647 Having electrically conductive polysilicon component
Patents: 294
Patent Applications: 14
- 648 Having refractory group metal (i.e., titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), or alloy thereof)
Patents: 942
Patent Applications: 82
- 649 Silicide
Patents: 596
Patent Applications: 38
- 650 Having noble group metal (i.e., silver (Ag), gold (Au), platinum (Pt), palladium (Pd), rhodium (Rh), ruthenium (Ru), iridium (Ir), osmium (Os), or alloy thereof)
Patents: 208
Patent Applications: 31
- 651 Silicide
Patents: 152
Patent Applications: 11
- 652 Plural layered electrode or conductor
Patents: 609
Patent Applications: 259
- 653 At least one layer forms a diffusion barrier
Patents: 1239
Patent Applications: 483
- 654 Having adhesion promoting layer
Patents: 359
Patent Applications: 47
- 655 Silicide
Patents: 993
Patent Applications: 99
- 656 Having refractory group metal (i.e., titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), or alloy thereof)
Patents: 956
Patent Applications: 145
- 657 Having electrically conductive polysilicon component
Patents: 311
Patent Applications: 13
- 658 Altering composition of conductor
Patents: 292
Patent Applications: 36
- 659 Implantation of ion into conductor
Patents: 358
Patent Applications: 21
- 660 Including heat treatment of conductive layer
Patents: 801
Patent Applications: 145
- 661 Subsequent fusing conductive layer
Patents: 141
Patent Applications: 14
- 662 Utilizing laser
Patents: 144
Patent Applications: 16
- 663 Rapid thermal anneal
Patents: 263
Patent Applications: 38
- 664 Forming silicide
Patents: 548
Patent Applications: 126
- 665 Utilizing textured surface
Patents: 192
Patent Applications: 16
- 666 Specified configuration of electrode or contact
Patents: 739
Patent Applications: 257
- 667 Conductive feedthrough or through-hole in substrate
Patents: 534
Patent Applications: 413
- 668 Specified aspect ratio of conductor or viahole
Patents: 235
Patent Applications: 10
- 669 And patterning of conductive layer
Patents: 775
Patent Applications: 238
- 670 Utilizing lift-off
Patents: 187
Patent Applications: 31
- 671 Utilizing multilayered mask
Patents: 245
Patent Applications: 44
- 672 Plug formation (i.e., in viahole)
Patents: 1224
Patent Applications: 167
- 673 Tapered etching
Patents: 171
Patent Applications: 11
- 674 Selective deposition of conductive layer
Patents: 456
Patent Applications: 190
- 675 Plug formation (i.e., in viahole)
Patents: 836
Patent Applications: 384
- 676 Utilizing electromagnetic or wave energy
Patents: 200
Patent Applications: 19
- 677 Pretreatment of surface to enhance or retard deposition
Patents: 330
Patent Applications: 38
- 678 Electroless deposition of conductive layer
Patents: 620
Patent Applications: 127
- 679 Evaporative coating of conductive layer
Patents: 124
Patent Applications: 36
- 680 Utilizing chemical vapor deposition (i.e., CVD)
Patents: 1183
Patent Applications: 280
- 681 Of organo-metallic precursor (i.e., MOCVD)
Patents: 533
Patent Applications: 103
- 682 Silicide
Patents: 802
Patent Applications: 219
- 683 Of refractory group metal (i.e., titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), or alloy thereof)
Patents: 732
Patent Applications: 93
- 684 Electrically conductive polysilicon
Patents: 228
Patent Applications: 34
- 685 Refractory group metal (i.e., titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), or alloy thereof)
Patents: 918
Patent Applications: 155
- 686 Noble group metal (i.e., silver (Ag), gold (Au), platinum (Pt), palladium (Pd), rhodium (Rh), ruthenium (Ru), iridium (Ir), osmium (Os), or alloy thereof)
Patents: 421
Patent Applications: 108
- 687 Copper of copper alloy conductor
Patents: 1885
Patent Applications: 379
- 688 Aluminum or aluminum alloy conductor
Patents: 700
Patent Applications: 57
- 689 CHEMICAL ETCHING
Patents: 1443
Patent Applications: 806
- 690 Combined with the removal of material by nonchemical means (e.g., ablating, abrading, etc.)
Patents: 731
Patent Applications: 108
- 691 Combined mechanical and chemical material removal
Patents: 1043
Patent Applications: 145
- 692 Simultaneous (e.g., chemical-mechanical polishing, etc.)
Patents: 2927
Patent Applications: 696
- 693 Utilizing particulate abradant
Patents: 1025
Patent Applications: 268
- 694 Combined with coating step
Patents: 1386
Patent Applications: 630
- 695 Simultaneous etching and coating
Patents: 538
Patent Applications: 41
- 696 Coating of sidewall
Patents: 599
Patent Applications: 109
- 697 Planarization by etching and coating
Patents: 501
Patent Applications: 59
- 698 Utilizing reflow
Patents: 127
Patent Applications: 4
- 699 Plural coating steps
Patents: 438
Patent Applications: 35
- 700 Formation of groove or trench
Patents: 1519
Patent Applications: 303
- 701 Tapered configuration
Patents: 529
Patent Applications: 42
- 702 Plural coating steps
Patents: 743
Patent Applications: 136
- 703 Plural coating steps
Patents: 468
Patent Applications: 310
- 704 Having liquid and vapor etching steps
Patents: 556
Patent Applications: 100
- 705 Altering etchability of substrate region by compositional or crystalline modification
Patents: 442
Patent Applications: 45
- 706 Vapor phase etching (i.e., dry etching)
Patents: 1915
Patent Applications: 462
- 707 Utilizing electromagnetic or wave energy
Patents: 204
Patent Applications: 29
- 708 Photo-induced etching
Patents: 259
Patent Applications: 39
- 709 Photo-induced plasma etching
Patents: 192
Patent Applications: 22
- 710 By creating electric field (e.g., plasma, glow discharge, etc.)
Patents: 1586
Patent Applications: 534
- 711 Utilizing multiple gas energizing means
Patents: 289
Patent Applications: 26
- 712 Reactive ion beam etching (i.e., RIBE)
Patents: 679
Patent Applications: 105
- 713 Forming tapered profile (e.g., tapered etching, etc.)
Patents: 361
Patent Applications: 12
- 714 Including change in etch influencing parameter (e.g., energizing power, etchant composition, temperature, etc.)
Patents: 1213
Patent Applications: 74
- 715 With substrate heating or cooling
Patents: 387
Patent Applications: 45
- 716 With substrate handling (e.g., conveying, etc.)
Patents: 198
Patent Applications: 22
- 717 Utilizing multilayered mask
Patents: 494
Patent Applications: 89
- 718 Compound semiconductor
Patents: 207
Patent Applications: 28
- 719 Silicon
Patents: 797
Patent Applications: 83
- 720 Electrically conductive material (e.g., metal, conductive oxide, etc.)
Patents: 908
Patent Applications: 61
- 721 Silicide
Patents: 194
Patent Applications: 3
- 722 Metal oxide
Patents: 194
Patent Applications: 17
- 723 Silicon oxide or glass
Patents: 1238
Patent Applications: 70
- 724 Silicon nitride
Patents: 663
Patent Applications: 36
- 725 Organic material (e.g., resist, etc.)
Patents: 1124
Patent Applications: 184
- 726 Having microwave gas energizing
Patents: 71
Patent Applications: 19
- 727 Producing energized gas remotely located from substrate
Patents: 97
Patent Applications: 6
- 728 Using magnet (e.g., electron cyclotron resonance, etc.)
Patents: 74
Patent Applications: 0
- 729 Using specified electrode/susceptor configuration (e.g., of multiple substrates using barrel-type susceptor, planar reactor configuration, etc.) to generate plasma
Patents: 259
Patent Applications: 28
- 730 Producing energized gas remotely located from substrate
Patents: 58
Patent Applications: 5
- 731 Using intervening shield structure
Patents: 48
Patent Applications: 1
- 732 Using magnet (e.g., electron cyclotron resonance, etc.)
Patents: 107
Patent Applications: 5
- 733 Using or orientation dependent etchant (i.e., anisotropic etchant)
Patents: 166
Patent Applications: 31
- 734 Sequential etching steps on a single layer
Patents: 623
Patent Applications: 68
- 735 Differential etching of semiconductor substrate
Patents: 259
Patent Applications: 72
- 736 Utilizing multilayered mask
Patents: 317
Patent Applications: 95
- 737 Substrate possessing multiple layers
Patents: 214
Patent Applications: 26
- 738 Selectively etching substrate possessing multiple layers of differing etch characteristics
Patents: 720
Patent Applications: 55
- 739 Lateral etching of intermediate layer (i.e., undercutting)
Patents: 301
Patent Applications: 25
- 740 Utilizing etch stop layer
Patents: 406
Patent Applications: 35
- 741 PN junction functions as etch stop
Patents: 17
Patent Applications: 2
- 742 Electrically conductive material (e.g., metal, conductive oxide, etc.)
Patents: 270
Patent Applications: 7
- 743 Silicon oxide or glass
Patents: 432
Patent Applications: 7
- 744 Silicon nitride
Patents: 207
Patent Applications: 6
- 745 Liquid phase etching
Patents: 1525
Patent Applications: 426
- 746 Utilizing electromagnetic or wave energy
Patents: 112
Patent Applications: 25
- 747 With relative movement between substrate and confined pool of etchant
Patents: 161
Patent Applications: 13
- 748 Projection of etchant against a moving substrate or controlling the angle or pattern of projected etchant
Patents: 166
Patent Applications: 25
- 749 Sequential application of etchant
Patents: 176
Patent Applications: 17
- 750 To same side of substrate
Patents: 269
Patent Applications: 15
- 751 Each etch step exposes surface of an adjacent layer
Patents: 181
Patent Applications: 7
- 752 Germanium
Patents: 124
Patent Applications: 24
- 753 Silicon
Patents: 485
Patent Applications: 90
- 754 Electrically conductive material (e.g., metal, conductive oxide, etc.)
Patents: 465
Patent Applications: 63
- 755 Silicide
Patents: 59
Patent Applications: 7
- 756 Silicon oxide
Patents: 470
Patent Applications: 34
- 757 Silicon nitride
Patents: 229
Patent Applications: 17
- 758 COATING OF SUBSTRATE CONTAINING SEMICONDUCTOR REGION OR OF SEMICONDUCTOR SUBSTRATE
Patents: 1259
Patent Applications: 664
- 759 Combined with the removal of material by nonchemical means
Patents: 240
Patent Applications: 75
- 760 Utilizing reflow (e.g., planarization, etc.)
Patents: 269
Patent Applications: 21
- 761 Multiple layers
Patents: 587
Patent Applications: 266
- 762 At least one layer formed by reaction with substrate
Patents: 341
Patent Applications: 59
- 763 Layers formed of diverse composition or by diverse coating processes
Patents: 1104
Patent Applications: 288
- 764 Formation of semi-insulative polycrystalline silicon
Patents: 116
Patent Applications: 8
- 765 By reaction with substrate
Patents: 231
Patent Applications: 77
- 766 Implantation of ion (e.g., to form ion amorphousized region prior to selective oxidation, reacting with substrate to form insulative region, etc.)
Patents: 365
Patent Applications: 40
- 767 Compound semiconductor substrate
Patents: 197
Patent Applications: 18
- 768 Reaction with conductive region
Patents: 139
Patent Applications: 18
- 769 Reaction with silicon semiconductive region (e.g., oxynitride formation, etc.)
Patents: 349
Patent Applications: 56
- 770 Oxidation
Patents: 748
Patent Applications: 162
- 771 Using electromagnetic or wave energy
Patents: 155
Patent Applications: 49
- 772 Microwave gas energizing
Patents: 46
Patent Applications: 12
- 773 In atmosphere containing water vapor (i.e., wet oxidation)
Patents: 243
Patent Applications: 25
- 774 In atmosphere containing halogen
Patents: 118
Patent Applications: 8
- 775 Nitridation
Patents: 407
Patent Applications: 74
- 776 Using electromagnetic or wave energy
Patents: 134
Patent Applications: 37
- 777 Microwave gas energizing
Patents: 59
Patent Applications: 11
- 778 Insulative material deposited upon semiconductive substrate
Patents: 1563
Patent Applications: 580
- 779 Compound semiconductor substrate
Patents: 143
Patent Applications: 7
- 780 Depositing organic material (e.g., polymer, etc.)
Patents: 1267
Patent Applications: 302
- 781 Subsequent heating modifying organic coating composition
Patents: 661
Patent Applications: 136
- 782 With substrate handling during coating (e.g., immersion, spinning, etc.)
Patents: 601
Patent Applications: 67
- 783 Insulative material having impurity (e.g., for altering physical characteristics, etc.)
Patents: 455
Patent Applications: 55
- 784 Introduction simultaneous with deposition
Patents: 298
Patent Applications: 21
- 785 Insulative material is compound of refractory group metal (i.e., titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), or alloy thereof)
Patents: 845
Patent Applications: 292
- 786 Tertiary silicon containing compound formation (e.g., oxynitride formation, etc.)
Patents: 458
Patent Applications: 120
- 787 Silicon oxide formation
Patents: 944
Patent Applications: 187
- 788 Using electromagnetic or wave energy (e.g., photo-induced deposition, plasma, etc.)
Patents: 701
Patent Applications: 105
- 789 Organic reactant
Patents: 430
Patent Applications: 56
- 790 Organic reactant
Patents: 440
Patent Applications: 56
- 791 Silicon nitride formation
Patents: 498
Patent Applications: 156
- 792 Utilizing electromagnetic or wave energy (e.g., photo-induced deposition, plasma, etc.)
Patents: 314
Patent Applications: 84
- 793 Organic reactant
Patents: 55
Patent Applications: 8
- 794 Organic reactant
Patents: 68
Patent Applications: 10
- 795 RADIATION OR ENERGY TREATMENT MODIFYING PROPERTIES OF SEMICONDUCTOR REGION OF SUBSTRATE (E.G., THERMAL, CORPUSCULAR, ELECTROMAGNETIC, ETC.)
Patents: 1063
Patent Applications: 583
- 796 Compound semiconductor
Patents: 215
Patent Applications: 30
- 797 Ordering or disordering
Patents: 41
Patent Applications: 3
- 798 Ionized irradiation (e.g., corpuscular or plasma treatment, etc.)
Patents: 416
Patent Applications: 107
- 799 By differential heating
Patents: 252
Patent Applications: 38
- 800 MISCELLANEOUS
Patents: 356
Patent Applications: 98
- 900 BULK EFFECT DEVICE MAKING
Patents: 56
Patent Applications: 35
- 901 CAPACITIVE JUNCTION
Patents: 28
Patent Applications: 1
- 902 CAPPING LAYER
Patents: 105
Patent Applications: 3
- 903 CATALYST AIDED DEPOSITION
Patents: 49
Patent Applications: 1
- 904 CHARGE CARRIER LIFETIME CONTROL
Patents: 59
Patent Applications: 0
- 905 CLEANING OF REACTION CHAMBER
Patents: 305
Patent Applications: 20
- 906 CLEANING OF WAFER AS INTERIM STEP
Patents: 508
Patent Applications: 18
- 907 CONTINUOUS PROCESSING
Patents: 121
Patent Applications: 3
- 908 Utilizing cluster apparatus
Patents: 91
Patent Applications: 1
- 909 CONTROLLED ATMOSPHERE
Patents: 193
Patent Applications: 1
- 910 CONTROLLING CHARGING STATE AT SEMICONDUCTOR-INSULATOR INTERFACE
Patents: 132
Patent Applications: 1
- 911 DIFFERENTIAL OXIDATION AND ETCHING
Patents: 139
Patent Applications: 0
- 912 DISPLACING PN JUNCTION
Patents: 10
Patent Applications: 2
- 913 DIVERSE TREATMENTS PERFORMED IN UNITARY CHAMBER
Patents: 96
Patent Applications: 0
- 914 DOPING
Patents: 45
Patent Applications: 2
- 915 Amphoteric doping
Patents: 18
Patent Applications: 0
- 916 Autodoping control or utilization
Patents: 35
Patent Applications: 0
- 917 Deep level dopants (e.g., gold (Au), chromium (Cr), iron (Fe), nickel (Ni), etc.)
Patents: 23
Patent Applications: 3
- 918 Special or nonstandard dopant
Patents: 70
Patent Applications: 0
- 919 Compensation doping
Patents: 84
Patent Applications: 0
- 920 Controlling diffusion profile by oxidation
Patents: 54
Patent Applications: 0
- 921 Nonselective diffusion
Patents: 5
Patent Applications: 1
- 922 Diffusion along grain boundaries
Patents: 15
Patent Applications: 0
- 923 Diffusion through a layer
Patents: 77
Patent Applications: 0
- 924 To facilitate selective etching
Patents: 84
Patent Applications: 0
- 925 Fluid growth doping control (e.g., delta doping, etc.)
Patents: 107
Patent Applications: 0
- 926 DUMMY METALLIZATION
Patents: 143
Patent Applications: 12
- 927 ELECTROMIGRATION RESISTANT METALLIZATION
Patents: 84
Patent Applications: 0
- 928 FRONT AND REAR SURFACE PROCESSING
Patents: 270
Patent Applications: 3
- 929 EUTECTIC SEMICONDUCTOR
Patents: 17
Patent Applications: 0
- 930 TERNARY OR QUATERNARY SEMICONDUCTOR COMPRISED OF ELEMENTS FROM THREE DIFFERENT GROUPS (E.G., I-III-V, ETC.)
Patents: 66
Patent Applications: 0
- 931 SILICON CARBIDE SEMICONDUCTOR
Patents: 297
Patent Applications: 27
- 932 BORON NITRIDE SEMICONDUCTOR
Patents: 17
Patent Applications: 0
- 933 GERMANIUM OR SILICON OR GE-SI ON III-V
Patents: 251
Patent Applications: 12
- 934 SHEET RESISTANCE (I.E., DOPANT PARAMETERS)
Patents: 59
Patent Applications: 0
- 935 GAS FLOW CONTROL
Patents: 172
Patent Applications: 1
- 936 GRADED ENERGY GAP
Patents: 80
Patent Applications: 4
- 937 HILLOCK PREVENTION
Patents: 38
Patent Applications: 0
- 938 LATTICE STRAIN CONTROL OR UTILIZATION
Patents: 155
Patent Applications: 0
- 939 LANGMUIR-BLODGETT FILM UTILIZATION
Patents: 15
Patent Applications: 0
- 940 LASER ABLATIVE MATERIAL REMOVAL
Patents: 173
Patent Applications: 9
- 941 LOADING EFFECT MITIGATION
Patents: 19
Patent Applications: 1
- 942 MASKING
Patents: 218
Patent Applications: 16
- 943 Movable
Patents: 24
Patent Applications: 0
- 944 Shadow
Patents: 92
Patent Applications: 2
- 945 Special (e.g., metal, etc.)
Patents: 212
Patent Applications: 3
- 946 Step and repeat
Patents: 33
Patent Applications: 2
- 947 Subphotolithographic processing
Patents: 269
Patent Applications: 11
- 948 Radiation resist
Patents: 155
Patent Applications: 1
- 949 Energy beam treating radiation resist on semiconductor
Patents: 165
Patent Applications: 1
- 950 Multilayer mask including nonradiation sensitive layer
Patents: 142
Patent Applications: 1
- 951 Lift-off
Patents: 167
Patent Applications: 5
- 952 Utilizing antireflective layer
Patents: 169
Patent Applications: 6
- 953 MAKING RADIATION RESISTANT DEVICE
Patents: 72
Patent Applications: 1
- 954 MAKING OXIDE-NITRIDE-OXIDE DEVICE
Patents: 145
Patent Applications: 8
- 955 MELT-BACK
Patents: 26
Patent Applications: 0
- 956 MAKING MULTIPLE WAVELENGTH EMISSIVE DEVICE
Patents: 19
Patent Applications: 0
- 957 MAKING METAL-INSULATOR-METAL DEVICE
Patents: 96
Patent Applications: 51
- 958 PASSIVATION LAYER
Patents: 226
Patent Applications: 9
- 959 MECHANICAL POLISHING OF WAFER
Patents: 154
Patent Applications: 1
- 960 POROUS SEMICONDUCTOR
Patents: 141
Patent Applications: 2
- 961 ION BEAM SOURCE AND GENERATION
Patents: 33
Patent Applications: 3
- 962 QUANTUM DOTS AND LINES
Patents: 180
Patent Applications: 17
- 963 REMOVING PROCESS RESIDUES FROM VERTICAL SUBSTRATE SURFACES
Patents: 113
Patent Applications: 1
- 964 ROUGHENED SURFACE
Patents: 259
Patent Applications: 4
- 965 SHAPED JUNCTION FORMATION
Patents: 105
Patent Applications: 0
- 966 SELECTIVE OXIDATION OF ION-AMORPHOUSIZED LAYER
Patents: 34
Patent Applications: 0
- 967 SEMICONDUCTOR ON SPECIFIED INSULATOR
Patents: 94
Patent Applications: 0
- 968 SEMICONDUCTOR-METAL-SEMICONDUCTOR
Patents: 6
Patent Applications: 0
- 969 SIMULTANEOUS FORMATION OF MONOCRYSTALLINE AND POLYCRYSTALLINE REGIONS
Patents: 71
Patent Applications: 3
- 970 SPECIFIED ETCH STOP MATERIAL
Patents: 190
Patent Applications: 1
- 971 STOICHIOMETRIC CONTROL OF HOST SUBSTRATE COMPOSITION
Patents: 45
Patent Applications: 0
- 972 STORED CHARGE ERASURE
Patents: 23
Patent Applications: 2
- 973 SUBSTRATE ORIENTATION
Patents: 90
Patent Applications: 0
- 974 SUBSTRATE SURFACE PREPARATION
Patents: 287
Patent Applications: 5
- 975 SUBSTRATE OR MASK ALIGNING FEATURE
Patents: 362
Patent Applications: 15
- 976 TEMPORARY PROTECTIVE LAYER
Patents: 126
Patent Applications: 1
- 977 THINNING OR REMOVAL OF SUBSTRATE
Patents: 520
Patent Applications: 10
- 978 FORMING TAPERED EDGES ON SUBSTRATE OR ADJACENT LAYERS
Patents: 262
Patent Applications: 1
- 979 TUNNEL DIODES
Patents: 50
Patent Applications: 1
- 980 UTILIZING PROCESS EQUIVALENTS OR OPTIONS
Patents: 74
Patent Applications: 0
- 981 UTILIZING VARYING DIELECTRIC THICKNESS
Patents: 382
Patent Applications: 13
- 982 VARYING ORIENTATION OF DEVICES IN ARRAY
Patents: 25
Patent Applications: 0
- 983 ZENER DIODES
Patents: 62
Patent Applications: 0
|
Definition
A. This class provides for manufacturing a semiconductor containing
a solid-state device by a combination of operations wherein: (1) no other class provides for the overall combination, and (2) the intent is to use the electrical properties of the semiconductor
in the device for at least one of the following purposes: (a) conducting
or modifying an electrical current, (b) storing electrical energy
for subsequent discharge within a microelectronic integrated circuit,
or (c) converting electromagnetic wave energy to electrical energy
or electrical energy to electromagnetic energy. B. This class provides for a species of Class 427 operations
involving: (1) coating a substrate with a semiconductive material, or (2) coating a semiconductive substrate or substrate containing
a semiconductive region; wherein the intent is to use the electrical properties of the
semiconductor in a solid-state device for at least one of the following
purposes: (a) conducting or modifying an electrical current, (b)
storing electrical energy for subsequent discharge within a microelectronic
integrated circuit, or (c) converting electromagnetic wave energy
to electrical energy or electrical energy to electromagnetic energy. C. This class provides for a species of Class 216 operations
involving etching a semiconductive substrate or etching a substrate
containing a semiconductive region, wherein the intent is to use
the electrical properties of the semiconductor in a solid-state
device for at least one of the following purposes: (1) conducting or modifying an electrical current, (2) storing electrical energy for subsequent discharge within
a microelectronic integrated circuit, or (3) converting electromagnetic wave energy to electrical energy
or electrical energy to electromagnetic energy. D. This class provides for packaging (e.g., with mounting,
encapsulating, etc.) or treatment of packaged semiconductor, when not elsewhere provided, wherein there are: (1) multiple operations having a step of permanently attaching
or securing a semiconductive substrate to a terminal, elongated
conductor, or support (e.g., mounting, housing, lead frame, discrete
heat sink, etc.), (2) multiple operations having a step of shaping flowable
plastic or flowable insulative material about a semiconductive substrate,
or (3) a step of treating an already packaged semiconductor substrate
(e.g., coating, etching, etc.); if the following conditions are
also met: (a) there is significant semiconductor
chip structure (e.g., such as recited semiconductor junction, etc.)
or named semiconductor device (e.g., DRAM, CMOS, EPROM, etc.), or
(b) there is no significant semiconductor structure if also combined
with a coating operation of this class (see B above) or etching operation
of this class (see C above), and (c) the intent is to use the electrical
properties of the semiconductor in a solid-state device for at least
one of the following purposes: (i) conducting or modifying an electrical
current, (ii) storing electrical energy for subsequent discharge within
a microelectronic integrated circuit, or (iii) converting electromagnetic
wave energy to electrical energy or electrical energy to electromagnetic
energy; (1)
Note. When Class 438 coating (see B above) or etching operations
(see C above) are not included,
Class 29, following historical precedence, provides for processes
of mounting, packaging, molding, or encapsulating of semiconductors
having no significant semiconductor chip structure (e.g., merely
recited as semiconductor chip, per se, etc.) when not elsewhere
provided.
E. This is the generic class for operations not elsewhere
provided for treating a semiconductive substrate or substrate containing a
semiconductive region; wherein the intent is to use the semiconductor
in a solid-state device for at least one of the following purposes:
(1) conducting or modifying an electrical current,
(2) storing electrical energy for subsequent discharge within
a microelectronic integrated circuit, or
(3) converting electromagnetic wave energy to electrical energy
or electrical energy to electromagnetic energy.
(1)
Note. Lacking an indication that the semiconducting material
is to be used for a purpose other than (a) conducting or modifying
an electrical current, (b) storing electrical energy for subsequent
discharge within a microelectronic integrated circuit, or (c) converting
electromagnetic wave energy to electrical energy or electrical energy
to electromagnetic energy; it will be assumed that the process meets
the Class 438 definition.
(2)
Note. For this class certain materials will be considered
to be semiconductors even if there is no other indication that semiconducting
properties are present. Thus, if the criteria set forth under the
(1) Note is met that there is no indication that the material is
to be used for a purpose other than (a), (b), or (c), the following
materials are to be considered semiconductive: silicon, germanium,
selenium, tellurium, gallium nitride, gallium phosphide, gallium
arsenide, aluminum phosphide, aluminum arsenide, and mercury cadmium
telluride.
|
Lines with other classes and within this class
Several classes provide for plural step operations for manufacturing
semiconductor solid-state devices or components therefor. Combined
operations for manufacturing semiconductor electrical devices or
semiconductor-based components therefor having plural steps not encompassed by another class are proper
for Class 438. For example, while plural steps acceptable to Class 264 (e.g.,
injection molding and subsequent removal of flash, etc.) remain
in Class 264, combinations of molding and adhesive bonding are provided
for in Class 156, even though this involves multiple steps, one
of which (i.e., molding) would be considered a Class 264 unit operation
even if semiconductor material is involved. However, combinations
of molding, adhesive bonding, and a Class 438 unit operation acting
on a semiconductor substrate which is used for at least one of the
following purposes: (a) conducting or modifying an electrical current,
(b) storing electrical energy for subsequent discharge within a
microelectronic integrated circuit, or (c) converting electromagnetic
wave energy to electrical energy or electrical energy to electromagnetic
energy, are considered proper for Class 438. A. UNIT COATING OPERATIONS, COMBINED OPERATIONS INVOLVING
COATING, AND PARTICLE BOMBARDMENT The following search notes are intended to clarify the lines
and distinctions for determining when coating operations are provided
for in Class 438. Throughout this class, the term "coating" is
used in the generic sense to include both surface coating and impregnation. The unit coating operations in Class 438 may be viewed as
a specie of a Class 427 process which was removed intact from Class
427 and transferred to Class 438 for the convenience of the searcher.
Thus, plural step operations that were acceptable in Class 427 are
now acceptable in Class 438 if the criteria for the semiconductor material
as set forth hereinabove is met. Coating operations which do not
meet the Class 438 definition may be classified in the classes identified
in References to Other Classes, below. B. UNIT ETCHING OPERATIONS AND COMBINED ETCHING OPERATIONS
IN CLASS 438 In References to Other Classes, below, are search notes are
intended to clarify the lines and distinctions for determining when
an etching unit operation is provided for in Class 438. Throughout
this class, the term "etching" is used in the
generic sense to include the removal of a surface by chemical reaction
or solvent action regardless of the composition thereof. The unit etching operations in Class 438 may be viewed as
a specie of a Class 216 process which was removed intact from Class
216 and transferred to Class 438 for the convenience of the searcher.
Thus, plural step operations that were acceptable in Class 216 are
now acceptable in Class 438 if the criteria for the semiconductor material
as set forth hereinabove is met. Etching operations which do not
meet the Class 438 definition may be found in References with Other
Classes, below. C. PACKAGING (E.G., WITH MOUNTING, ENCAPSULATING, ETC.) OR
TREATMENT OF PACKAGED SEMICONDUCTOR Packaging is a semiconductor art manufacturing term for integration,
assembly, or surrounding of a semiconductive substrate (e.g., chip,
die, etc.) with a permanent encasement, housing, capsule, or support.
This is distinguished from package making found in Class 53 which is
directed to preparing a manufactured product for passage through
the channels of trade in a safe, convenient, and attractive condition,
usually wrapped in a cover or in a container which is intended to
be removed when the manufactured product is used. Class 438 takes the following packaging or packaging related
operations, if not elsewhere provided: (a) multiple operations having
a step of permanently attaching or securing a semiconductive substrate
to a terminal, elongated conductor, or support (e.g., mounting,
housing, lead frame, discrete heat sink, etc.), (b) multiple operations
having a step of shaping flowable plastic or flowable insulative
material about a semiconductive substrate, or (c) a step of treating
an already packaged semiconductor substrate (e.g., coating, etching,
etc.). However, other manufacturing classes have established historic
lines with Class 438 that must be considered when determining proper
placement. These lines with external classes revolve around such
concepts as: whether there is significant semiconductor device
structure, whether there is a unit operation or a so-called "multi-step" operation,
etc. The search notes in References to Other Classes, below, are
intended to clarify these established lines and to alert the searcher
to other classes for related searches. D. LINE NOTES TO OTHER MANUFACTURING OPERATIONS See References to Other Classes, below for lines clarifying
the relationship of other chemical classes to Class 438. For many
of the chemical classes, inclusion of metal casting, working or
deforming, or fusion bonding step is not acceptable
if combined with an operation of the chemical class. E. LOCATION OF SEMICONDUCTOR COMPOUND, COMPOSITION, OR STOCK Class 438 does not provide for compound, composition, or stock
material produced or utilized by a Class 438 process. A process
of manufacture or use of a compound or composition is usually classified
with the compound or composition. The process of manufacturing a
semiconductor compound or composition and the formation of a semiconductor
device or semiconductor junction takes combined operations to Class
438. Also see References to Other Classes, below, identifying this
section. F. LINE TO HEATING CLASSES This class (438), will take the process of (a) heating of semiconductor
material to modify the microstructure or electrical properties thereof,
(b) combined operations involving heating of semiconductor material
to modify the semiconductor structure or electrical properties when not provided in another class, or (c)
heating of semiconductor substrates that affects only the nonsemiconductor
region of the substrate when combined with other operations acceptable
to Class 438 or combined with the establishment of device structure
(e.g., connects, insulating regions, electrodes, etc.). See References to Other Classes, below, identified as heating
classes. G. LINE NOTES TO ELECTRICAL CLASSES See References to Other Classes, below. |
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