Did You Know...
...During the Civil War, the Confederacy established its own Patent Office which issued 266 patents, a third of which concerned implements of war.
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 7425483 | Structure and method of fabricating a hybrid substrate for high-performance hybrid-orientation silicon-on-insulator CMOS devices The present invention provides a method of integrating semiconductor devices such that different types of devices are formed upon a specific crystal orientation of a hybrid substrate that enhances the performance of each type of device. Specifically, the present inv... | 09/16/2008 |
| 7354523 | Methods for sidewall etching and etching during filling of a trench A method for sidewall etching includes providing a substrate having a trench defined therein, with the trench having fill material disposed over a bottom thereof, along a sidewall thereof, and at the trench opening. The fill material along the sidewall of the trench... | 04/08/2008 |
| 7285452 | Method to selectively form regions having differing properties and structure A semiconductor device is formed having two physically separate regions with differing properties such as different surface orientation, crystal rotation, strain or composition. In one form a first layer having a first property is formed on an insulating layer. The ... | 10/23/2007 |
| 7279751 | Semiconductor laser device and manufacturing method thereof It is an object of the present invention to provide a semiconductor laser device with high-yielding in which a clack generated in an epitaxial growth layer is restrained and to the manufacturing method thereof, the semiconductor laser device includes a GaN substrate... | 10/09/2007 |
| 7241708 | Laser irradiation method that includes moving a center of rotation along a straight line in order to enhance the crystallinity of the semiconductor film Continuous wave laser apparatus with enhanced processing efficiency is provided as well as a method of manufacturing a semiconductor device using the laser apparatus. The laser apparatus has: a laser oscillator; a unit for rotating a process object; a unit for movin... | 07/10/2007 |
| 7084051 | Manufacturing method for semiconductor substrate and manufacturing method for semiconductor device A purpose of the invention is to provide a manufacturing method for a semiconductor substrate in which a high quality strained silicon channel can easily be formed without sacrificing the processing efficiency of a wafer and to provide a manufacturing method for a s... | 08/01/2006 |
| 6887734 | Method of manufacturing semiconductor pressure sensor In a semiconductor pressure sensor manufacturing method of disposing an etching mask (50) at one-face (11) side of a monocrystal silicon substrate 10 in which the face-direction of the one face 11 corresponds to the (110)-face, and then c... | 05/03/2005 |
| 6838319 | Transfer molding and underfilling method and apparatus including orienting the active surface of a semiconductor substrate substantially vertically A method and apparatus for reducing or eliminating the formation of air pockets or voids in a flowable material provided in contact with at least one substrate. The flowable material is provided in a non-horizontal direction and flows from a lower portion to an uppe... | 01/04/2005 |
| 6822262 | Semiconductor thin film and semiconductor device After an amorphous semiconductor thin film is crystallized by utilizing a catalyst element, the catalyst element is removed by performing a heat treatment in an atmosphere containing a halogen element. A resulting crystalline semiconductor thin film exhibits {110} o... | 11/23/2004 |
| 6803264 | Method of fabricating a semiconductor device A semiconductor device with high reliability is provided using an SOI substrate. When the SOI substrate is fabricated by using a technique typified by SIMOX, ELTRAN, or Smart-Cut, a single crystal semiconductor substrate having a main surface (crystal face) of a {11... | 10/12/2004 |
| 6740542 | Method for producing micromachined devices and devices obtained thereof The present invention is related to a method for producing micromachined devices for use in Microelectromechanical Systems (MEMS), comprising the steps of providing a crystalline wafer, and processing from said wafer at least one micromachined device comprising at l... | 05/25/2004 |
| 6720632 | Semiconductor device having diffusion layer formed using dopant of large mass number Between a source/drain heavily-doped diffusion layer and a region below a side face of a gate electrode in an epitaxial semiconductor substrate, an extension heavily-doped diffusion layer where N-type As ions are diffused is formed to have shallower junction than th... | 04/13/2004 |
| 6608328 | Semiconductor light emitting diode on a misoriented substrate A light emitting diode is made by a compound semiconductor in which light is emitted from an active region with a multiple quantum well structure. The active region is sandwiched by InGaAlP-based lower and upper cladding layers. Emission efficiency of the... | 08/19/2003 |
| 6537895 | Method of forming shallow trench isolation in a silicon wafer A method of forming a shallow trench isolation region in a silicon wafer which results in the elimination of long range slip dislocations in the wafer and reduces leakage current across the isolation regions. Long shallow trenches are formed in a silicon ... | 03/25/2003 |
| 6514836 | Methods of producing strained microelectronic and/or optical integrated and discrete devices A new method of producing strained crystalline semiconductor microelectronic devices. Microelectronic devices can either be formed within a membrane, prior to straining or processed after straining. The method includes the steps of straining a membrane al... | 02/04/2003 |
| 6495886 | Semiconductor thin film and semiconductor device After an amorphous semiconductor thin film is crystallized by utilizing a catalyst element, the catalyst element is removed by performing a heat treatment in an atmosphere containing a halogen element. A resulting crystalline semiconductor thin film exhib... | 12/17/2002 |
| 6455397 | Method of producing strained microelectronic and/or optical integrated and discrete devices A method of producing a strained crystalline semiconductor microelectronic device(s). Microelectronic device(s) are formed within a membrane. The method includes the steps of straining a membrane along at least one axis and bonding the membrane to a base ... | 09/24/2002 |
| 6409463 | Apparatuses and methods for adjusting a substrate centering system Apparatuses and methods for use in adjusting a substrate centering system to center a substrate on a rotatable chuck in a semiconductor processing machine, the chuck including at least one reference point. One apparatus comprises a plate configured to be ... | 06/25/2002 |
| 6358867 | Orientation independent oxidation of silicon A method for forming an oxide of substantially uniform thickness on at least two crystallographic planes of silicon, in accordance with the present invention, includes providing a substrate where silicon surfaces have at least two different crystallograph... | 03/19/2002 |
| 6335231 | Method of fabricating a high reliable SOI substrate A semiconductor device with high reliability is provided using an SOI substrate. When the SOI substrate is fabricated by using a technique typified by SIMOX, ELTRAN, or Smart-Cut, a single crystal semiconductor substrate having a main surface (crystal fac... | 01/01/2002 |
| 6307214 | Semiconductor thin film and semiconductor device After an amorphous semiconductor thin film is crystallized by utilizing a catalyst element, the catalyst element is removed by performing a heat treatment in an atmosphere containing a halogen element. A resulting crystalline semiconductor thin film has f... | 10/23/2001 |
| 6245615 | Method and apparatus on (110) surfaces of silicon structures with conduction in the <110> direction Improved methods and structures are provided that are lateral to surfaces with a (110) crystal plane orientation such that an electrical current of such structures is conducted in the direction. Advantageously, improvements in hole carrier mobility ... | 06/12/2001 |
| 6177285 | Process for determining the crystal orientation in a wafer A method for determining the crystal orientation of a wafer using anisotropic etching in which an etching mask having mask openings such as circle scale marks arranged one beside the other is applied in relation to a preexisting marking of the wafer. Mask... | 01/23/2001 |
| 6174788 | Partial semiconductor wafer processing with multiple cuts of random sizes Partial wafer processing is achieved by down loading the wafer map of the whole wafer from a host (12) and if the partial wafer contains the reference die (14) move table to a locator die (15) and upload locator die coordinates to wafer map data host (16)... | 01/16/2001 |
| 6156625 | Partial semiconductor wafer processing using wafermap display Partial wafer processing is achieved by down loading the wafer map of the whole wafer from a host (2) and display the whole wafer in the die bonder monitor (3) move the wafer table to a first die pickup position (4) and move the display cursor to the firs... | 12/05/2000 |
| 6083830 | Process for manufacturing a semiconductor device A process for producing a semiconductor device comprising the steps of forming a titanium film having a (002) orientation, forming a titanium nitride film on the titanium film to such a thickness as allows the titanium nitride film to follow the orientati... | 07/04/2000 |
| 6080599 | Semiconductor optoelectric device and method of manufacturing the same The present invention is intended to provide a semiconductor optoelectric device with high luminescent efficiency and a method of manufacturing the same. The semiconductor optoelectric device 18 according to the present invention is constructed by deposit... | 06/27/2000 |
| 6001666 | Manufacturing process of strain gauge sensor using the piezoresistive effect This invention relates to the manufacture of a strain gauge sensor using the piezoresistive effect, comprising a structure (1) made of a monocrystalline material acting as support to at least one strain gauge (2) made of a semiconducting material with a f... | 12/14/1999 |
| 5976954 | Method and apparatus for cleaning and separating wafers bonded to a fixing member The present invention relates to a method of cleaning wafers bonded on a fixing member in the form of an ingot, and then sliced by a wire saw from a direction perpendicular to the longitudinal dimension to form a row of wafers. The method includes: a clea... | 11/02/1999 |
| 5970330 | Method of making field effect transistor with higher mobility A method of increasing the performance of an FET device by aligning the channel of the FET with the [110] crystal direction of a {100} silicon wafer. The {100} silicon wafer and the image of a lithographic mask are rotated 45° relative to each other so t... | 10/19/1999 |
| 5956568 | Methods of fabricating and contacting ultra-small semiconductor devices A method of fabricating ultra-small semiconductor devices including providing a mesa on a substrate. A plurality of overlying layers of semiconductor material are grown in overlying relationship to the mesa so that a perpendicular discontinuity is produce... | 09/21/1999 |
| 5945690 | Compound semiconductor device The present invention includes a process of growing a compound semiconductor layer locally, after applying radical particles that do not become an etchant of a compound semiconductor layer to an insulating mask so as to terminate the surface of the insula... | 08/31/1999 |
| 5923054 | Light emitting diode with tilted plane orientation In a light-emitting diode, which comprises epitaxial wafer where a gallium phosphide or a gallium phosphide arsenide mixed crystal epitaxial layer is grown on a III-V family compound single crystal substrate having zinc blende type crystal structure, the ... | 07/13/1999 |
| 5888838 | Method and apparatus for preventing chip breakage during semiconductor manufacturing using wafer grinding striation information A method is described by which the mechanical strength of chips of semiconductor devices can be controlled by appropriate wafer finishing and sorted by knowledge of the finishing method and chip and wafer geometry. The control and sorting derive from a kn... | 03/30/1999 |
| 5883012 | Method of etching a trench into a semiconductor substrate Trench structures (12,32,35,46) are formed in single crystal silicon substrates (10,30) that have either a (110) or (112) orientation. A selective wet etch solution is used that removes only the exposed portions of the single crystal silicon substrates (1... | 03/16/1999 |
| 5877516 | Bonding of silicon carbide directly to a semiconductor substrate by using silicon to silicon bonding A module and a method of making the module is disclosed. The module is formed from a semiconductor substrate and a silicon carbide chip for high temperature applications. The module is designed to be compatible with current silicon IC processes.... | 03/02/1999 |
| 5849638 | Deep trench with enhanced sidewall surface area The present invention includes a method and system to increase the deep trench sidewall surface area in a storage node on a DRAM chip. By tilting the trenches the capacitance is increased without taking up more space on the semiconductor chip.... | 12/15/1998 |
| 5843832 | Method of formation of thin bonded ultra-thin wafers A technique of bonding a thin wafer layer to a substrate. The wafer is blown dry using an inert gas to prevent it from being damaged, while still ensuring that it dries completely. The initial bonding is done by orienting crystallographic axes, and then a... | 12/01/1998 |
| 5705408 | Method for forming semiconductor integrated circuit using monolayer epitaxial growth A semiconductor integrated circuit device including: an off-substrate having a semiconductor surface with a plurality of steps each having a height of one monolayer and extending in one direction; a wiring layer formed on the semiconductor surface of the ... | 01/06/1998 |
| 5702538 | Silicon semiconductor wafer solar cell and process for producing said wafer A silicon semiconductor wafer is constructed from three mutually inclined monocrystalline regions (6, 7, 8) which form three circular sectors of the wafer whose interfaces and boundary lines consequently extend radially with respect to one another and for... | 12/30/1997 |
