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...that to encourage use of his new invention, the shopping cart, market owner Sylvan Goldman hired fake shoppers to push the carts around his store in Oklahoma City? Seems his customers were reluctant to give up their hand-carried baskets.
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| Number | Title | Issue Date |
| 7312128 | Selective epitaxy process with alternating gas supply In one example, a method of epitaxially forming a silicon-containing material on a substrate surface is presented which includes positioning a substrate into a process chamber. The substrate has a monocrystalline surface and at least a second surface, such as an amo... | 12/25/2007 |
| 7265010 | High performance vertical PNP transistor method The invention includes a method and resulting structure for fabricating high performance vertical NPN and PNP transistors for use in BiCMOS devices. The resulting high performance vertical PNP transistor includes an emitter region including silicon and germanium, an... | 09/04/2007 |
| 7227186 | Thin film transistor and method of manufacturing the same An amorphous silicon film is laser irradiated a plural number of times to make the film composed of a plurality of crystal grains while suppressing the formation of protrusions at the boundaries of the adjoining grains to realize a polycrystalline silicon thin film ... | 06/05/2007 |
| 7067341 | Single electron transistor manufacturing method by electro-migration of metallic nanoclusters A method manufactures a single electron transistor device by electro-migration of nanocluster wherein said nanoclusters are metallically passivated and forced to assembly over a lithographic patterned substrate under control of a non homogeneous electric field at ro... | 06/27/2006 |
| 6991999 | Bi-layer silicon film and method of fabrication A bi-layer silicon electrode and its method of fabrication is described. The electrode of the present invention comprises a lower polysilicon film having a random grain microstructure, and an upper polysilicon film having a columnar grain microstructure. ... | 01/31/2006 |
| 6964892 | N-channel metal oxide semiconductor (NMOS) driver circuit and method of making same An N-channel metal oxide semiconductor (NMOS) driver circuit (and method for making the same), includes a boost gate stack formed on a substrate and having a source and drain formed by a low concentration implantation, and an N-driver coupled to the boost gate stack... | 11/15/2005 |
| 6909164 | High performance vertical PNP transistor and method The invention includes a method and resulting structure for fabricating high performance vertical NPN and PNP transistors for use in BiCMOS devices. The resulting high performance vertical PNP transistor includes an emitter region including silicon and germanium, an... | 06/21/2005 |
| 6884699 | Process and unit for production of polycrystalline silicon film A process for making a polycrystalline silicon film includes forming, on a glass substrate, an amorphous silicon film having a first region and a second region that contacts the first region, forming a first polycrystalline portion by irradiating the first region of... | 04/26/2005 |
| 6593174 | Field effect transistor having dielectrically isolated sources and drains and method for making same A field-effect transistor and a method for its fabrication is described. The transistor includes a monocrystalline semiconductor channel region overlying and epitaxially continuous with a body region of a semiconductor substrate. First and second semicond... | 07/15/2003 |
| 6500717 | Method for making an integrated circuit device with dielectrically isolated tubs and related circuit A method for making an integrated circuit includes forming spaced-apart trenches on a surface of a single crystal silicon substrate, lining the trenches with a silicon oxide layer, forming a first polysilicon layer over the silicon oxide layer, forming a ... | 12/31/2002 |
| 6407014 | Method achieving higher inversion layer mobility in novel silicon carbide semiconductor devices The invention provides a method for the production of high quality thermally grown oxide on top of silicon carbide. The high quality oxide is obtained by selectively removing the carbon from the silicon carbide in the areas where oxide formation is desire... | 06/18/2002 |
| 6337255 | Method for forming a trench structure in a silicon substrate A method for forming a trench structure in a silicon substrate, which trench structure serves for electrically insulating a first region of the substrate from a second substrate region. The method proceeds from a growth of a thermal oxide layer on the sub... | 01/08/2002 |
| 6184059 | Process of making diamond-metal ohmic junction semiconductor device A diamond product comprising a semiconductor layer having an outer surface region of graphite in contact with the metal electrode to form an ohmic junction with the metal electrode, wherein the outer surface region of graphite has a thickness of at least ... | 02/06/2001 |
| 6171935 | Process for producing an epitaxial layer with laterally varying doping A process for producing an epitaxial layer with laterally varying doping includes the following steps: (a) applying a patterned insulator layer to a semiconductor body; (b) growing a first epitaxial layer on the semiconductor body and the patterned insula... | 01/09/2001 |
| 5998844 | Semiconductor constructions comprising electrically conductive plugs having monocrystalline and polycrystalline silicon A method of forming a field effect transistor relative to a monocrystalline silicon substrate, where the transistor has an elevated source and an elevated drain, includes: a) providing a transistor gate over the monocrystalline silicon substrate, the gate... | 12/07/1999 |
| 5913135 | Method for forming planar field effect transistors with source and drain on oxide and device constructed therefrom A method for forming a transistor (50) includes forming a first insulating region (16) in the outer surface of a semiconductor body (10) and forming a second insulating region (16) in the outer surface of the semiconductor body (10) and spaced apart from ... | 06/15/1999 |
| 5840613 | Fabrication method for semiconductor device A semiconductor device including a bipolar transistor is provided, which can reduce the base resistance of the transistor. This device includes a semiconductor base region having a first semiconductor active region of a first conductivity type in its insi... | 11/24/1998 |
| 5831334 | Field effect transistors comprising electrically conductive plugs having monocrystalline and polycrystalline silicon A method of forming a field effect transistor relative to a monocrystalline silicon substrate, where the transistor has an elevated source and an elevated drain, includes: a) providing a transistor gate over the monocrystalline silicon substrate, the gate... | 11/03/1998 |
| 5693979 | Semiconductor device A semiconductor device having a first insulation film, a base contact and a second insulation film on a semiconductor substrate. The first and second insulation films and the base contact respectively have openings which forms a hole extending therethroug... | 12/02/1997 |
| 5648280 | Method for fabricating a bipolar transistor with a base layer having an extremely low resistance A base region structure involved in a bipolar transistor, wherein the base region comprises a compound semiconductor epitaxial layer formed in a recessed portion provided by etching in an upper region of the semiconductor substrate and the recessed portio... | 07/15/1997 |
| 5637518 | Method of making a field effect transistor having an elevated source and an elevated drain A method of forming a field effect transistor relative to a monocrystalline silicon substrate, where the transistor has an elevated source and an elevated drain, includes: a) providing a transistor gate over the monocrystalline silicon substrate, the gate... | 06/10/1997 |
| 5599723 | Method for manufacturing bipolar transistor having reduced base-collector parasitic capacitance In a process for manufacturing a bipolar transistor, an intrinsic base is formed by a selective epitaxial growth while the lower surface of a base electrode single crystal silicon film 33 and the surface of a collector epitaxial layer 3 are exposed. In th... | 02/04/1997 |
| 5569611 | Method of manufacturing a bipolar transistor operating at low temperature In a method of manufacturing a bipolar transistor, an oxide film pattern is formed on an epitaxial collector layer of a first conductive type which is formed on a buried layer of the first conductive type. A selectively-ion-implanted-collector (SIC) regio... | 10/29/1996 |
| 5504018 | Process of fabricating bipolar transistor having epitaxially grown base layer without deterioration of transistor characteristics A bipolar transistor has a base rink structure epitaxially grown from an overhang portion of a poly-crystal silicon base electrode and an epitaxial collector layer and an intrinsic base structure grown on a concave central portion of the base rink structu... | 04/02/1996 |
| 5494836 | Process of producing heterojunction bipolar transistor with silicon-germanium base The invention provides a heterojunction bipolar transistor which has a low reistance SiGe base and is high in current gain and cutoff frequency even at low temperatures near the liquid nitrogen temperature. The transistor fabrication process comprises for... | 02/27/1996 |
| 5478774 | Method of fabricating patterned-mirror VCSELs using selective growth A method of fabricating VCSELs including the steps of epitaxially growing a first mirror stack of a first conductivity type, an active region on the first mirror stack, and a first portion of a second mirror stack of a second conductivity type on the acti... | 12/26/1995 |
| 5476809 | Semiconductor device and method of manufacturing the same This invention relates to a semiconductor device which comprises a monocrystalline silicon substrate, a first insulating film formed in a first region on one major surface of the monocrystalline silicon substrate, a first monocrystalline silicon layer for... | 12/19/1995 |
| 5432104 | Method for fabricating a vertical bipolar transistor with reduced parasitic capacitance between base and collector regions A method of fabricating a vertical bipolar semiconductor device includes a step of forming an N- -type silicon epitaxial layer which constitutes a part of a collector region and a P+ -type polycrystalline silicon film which functions... | 07/11/1995 |
| 5296388 | Fabrication method for semiconductor devices A fabrication method for semiconductor devices connecting a multi-crystal semiconductor thin film and a semiconductor region including a high density of an impurity formed in a single crystal semiconductor substrate. After forming a N-type semiconductor r... | 03/22/1994 |
| 5234845 | Method of manufacturing semiconductor IC using selective poly and EPI silicon growth Herein disclosed is an improved bipolar transistor manufacturing method which adopts an EBT (Epitaxial Base Transistor) structure using an SPESG (Selective Poly-and-Epitaxial-Silicon Growth) technique. Specifically, the method of manufacturing a bipolar t... | 08/10/1993 |
| 5219767 | Process for preparing semiconductor device Disclosed is a process for preparing a semiconductor device which comprises a step of growing, in a molecular beam epitaxial growth apparatus, a P-type silicon epitaxial layer which becomes the base, on an N-type silicon epitaxial layer which becomes the ... | 06/15/1993 |
| 5114875 | Planar dielectric isolated wafer A substantially planar dielectric wafer is formed by utilizing a polysilicon filler to remove surface irregularities (15, 15'). The polysilicon filler is formed by filling surface irregularities (15, 15') with polysilicon (19) and polishing the polysilico... | 05/19/1992 |
| 5110757 | Formation of composite monosilicon/polysilicon layer using reduced-temperature two-step silicon deposition A reduced-temperature two-step silicon deposition performed at different silicon sources is used in forming a composite monosilicon/polysilicon layer (20/24/26) on a body that contains a monosilicon region (10) and an adjoining dielectric regin (12). The ... | 05/05/1992 |
| 5104823 | Monolithic integration of optoelectronic and electronic devices In the monolithic integration of HFET and DOES device, a wide band gap carrier confining semiconductor layer is provided only at predetermined locations where DOES devices are desired. This layer is not provided at other predetermined locations where HFET... | 04/14/1992 |
| 5096844 | Method for manufacturing bipolar transistor by selective epitaxial growth of base and emitter layers The invention relates to a method in particular for manufacturing bipolar transistors. By applying selective epitaxy methods and by using self-adjusting techniques, the process sequence is shortened and the transistor properties are improved.... | 03/17/1992 |
| 5084407 | Method for planarizing isolated regions A method is described for planarizing isolated regions (12) and active regions (22) of a semiconductor wafer (10). Semiconductor wafer (10) is provided with islands of dielectric (12) that cover portions of the semiconductor wafer (10), while leaving othe... | 01/28/1992 |
| 5008207 | Method of fabricating a narrow base transistor There is provided a method for use in the fabrication of a transistor, the method including the steps of: providing a substrate of semiconductor material including a region of first conductivity type; forming a first layer of second conductivity type epit... | 04/16/1991 |
| 4963505 | Semiconductor device and method of manufacturing same Disclosed is a semiconductor device which comprises a substrate, an insulating film formed at a predetermined region in the substrate or on the main surface of the substrate, a polycrystalline semiconductor layer formed on at least the insulating film, a ... | 10/16/1990 |
| 4949146 | Structured semiconductor body A structured semiconductor body e.g., an integrated circuit or a transistor, based on an silicon substrate having barrier regions which contain polycrystalline silicon, preferably produced by a silicon MBE process. The barrier regions are required to deli... | 08/14/1990 |
| 4925810 | Compound semiconductor device and a method of manufacturing the same A compound semiconductor device comprises a substrate formed from a single crystal of silicon, a layer of an insulator formed on a portion of a surface of the substrate, at least one layer of a high resistance compound semiconductor formed on the insulato... | 05/15/1990 |
