Class 438/966 - SELECTIVE OXIDATION OF ION-AMORPHOUSIZED LAYER

Subclass of Class 438 - Semiconductor device manufacturing: process
Definition: Art collection involving enhancing the oxidation of predetermined
No. of patents: 34
Last issue date: 09/16/2008

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Number	Title	Issue Date
7425480	Semiconductor device and method of manufacture thereof A method of manufacturing a MOS transistor incorporating a silicon oxide film serving as a gate insulating film and containing nitrogen and a polycrystalline silicon film serving as a gate electrode and containing a dopant and arranged such that the gate electrode i...	09/16/2008
7303946	Method of manufacturing a semiconductor device using an oxidation process A method of manufacturing a MOS transistor incorporating a silicon oxide film serving as a gate insulating film and containing nitrogen and a polycrystalline silicon film serving as a gate electrode and containing a dopant and arranged such that the gate electrode i...	12/04/2007
6998353	Active wafer cooling during damage engineering implant to enhance buried oxide formation in SIMOX wafers The present invention provides methods and system for forming a buried oxide layer (BOX) region in a semiconductor substrate, such as, a silicon wafer. In one aspect, in a method of the invention, an initial dose of oxygen ions is implanted in the substrate while ma...	02/14/2006
6900111	Method of forming a thin oxide layer having improved reliability on a semiconductor surface A method for forming a reliable and ultra-thin oxide layer, such as a gate oxide layer of an MOS transistor, comprises an annealing step immediately performed prior to oxidizing a substrate. The annealing step is performed in an inert gas ambient to avoid oxidation ...	05/31/2005
6869891	Semiconductor device having groove and method of fabricating the same A method for forming a plurality of grooves of a semiconductor device having of a plurality of MOS transistors is provided. A plurality of photoresist patterns are formed on a semiconductor substrate. Ions are implanted on a portion of the semiconductor substrate us...	03/22/2005
6855994	Multiple-thickness gate oxide formed by oxygen implantation A semiconductor device including a gate oxide of multiple thicknesses for multiple transistors where the gate oxide thicknesses are altered through the growth process of implanted oxygen ions into selected regions of a substrate. The implanted oxygen ions accelerate...	02/15/2005
6743651	Method of forming a SiGe-on-insulator substrate using separation by implantation of oxygen A method of fabricating high-quality, substantially relaxed SiGe-on-insulator substrate is provided by implanting oxygen into a Si/SiGe multilayer heterostructure which comprises alternating Si and SiGe layers. Specifically, the high quality, relaxed SiGe-on-insulat...	06/01/2004
6455405	Using implantation method to control gate oxide thickness on dual oxide semiconductor devices A method for forming dual thickness gate oxide layers comprising the following steps. A structure having at least a first area and a second area is provided. The second area of the structure is masked. Ion implanting Si4+ or Ge4+ ion...	09/24/2002
6407014	Method achieving higher inversion layer mobility in novel silicon carbide semiconductor devices The invention provides a method for the production of high quality thermally grown oxide on top of silicon carbide. The high quality oxide is obtained by selectively removing the carbon from the silicon carbide in the areas where oxide formation is desire...	06/18/2002
6383859	Method of forming semiconductor device including patterning lower electrode of capacitor and gate electrode of transistor with same resist A silicon film is formed on a semiconductor substrate, and a silicon oxide film and a polycrystalline silicon film are formed thereon. Patterning is performed for the polycrystalline silicon film to form a capacitive upper electrode. Then, patterning is p...	05/07/2002
6232206	Method for forming electrostatic discharge (ESD) protection transistors A method is provided for selective oxidation on source/drain regions of transistors on an integrated circuit. The method includes the steps of a) incorporating a neutral species into first kind of the source/drain regions, and b) forming oxidation regions...	05/15/2001
6143624	Shallow trench isolation formation with spacer-assisted ion implantation An insulated trench isolation structure is formed by ion implanting impurities proximate the trench edges to enhance the silicon oxidation rate and, hence, increase the thickness of the resulting oxide at the trench edges. Embodiments include masking and ...	11/07/2000
6013557	Advanced CMOS isolation utilizing enhanced oxidation by light ion implantation A method for forming field isolation regions in multilayer semiconductor devices comprises the steps of masking active regions of the substrate, forming porous silicon in the exposed field isolation regions, removing the mask and oxidizing the substrate. ...	01/11/2000
5930658	Oxidized oxygen-doped amorphous silicon ultrathin gate oxide structures A method of manufacturing a semiconductor device to negate the effects on the device performance caused by defects on the silicon substrate. An oxygen doped amorphous silicon layer is deposited onto the gate region of the semiconductor device and can have...	07/27/1999
5895252	Field oxidation by implanted oxygen (FIMOX) A method of forming a field oxide isolation region is described, in which a masking layer is formed over a silicon substrate. The masking layer is patterned to form an opening for the field oxide isolation region, whereby the remainder of the masking laye...	04/20/1999
5780347	Method of forming polysilicon local interconnects A method and apparatus of forming local interconnects in a MOS process deposits a layer of polysilicon over an entire region after several conventional MOS processing steps. The region is then masked to provide protected regions and unprotected regions. T...	07/14/1998
5691212	MOS device structure and integration method This invention describes a new method for forming self-aligned silicide for application in MOSFET, and a new structure of MOSFET device featuring elevated source and drain, with the objectives of reducing silicide penetration into the source and drain jun...	11/25/1997
5407838	Method for fabricating a semiconductor device using implantation and subsequent annealing to eliminate defects A method for fabricating a semiconductor device including carrying out an ion implantation into a predetermined region of a single-crystal silicon substrate to form therein an amorphized ion-implanted layer according to any one of the methods: (A) implant...	04/18/1995
5376560	Method for forming isolated semiconductor structures A number of dielectrically isolated single crystal islands are formed by implanting neon or other group Zero ions into a semiconductor substrate, preferably silicon, at a sufficiently high energy to created an amorphized region in the interior of the subs...	12/27/1994
5372952	Method for forming isolated semiconductor structures A number of dielectrically isolated single crystal islands are formed by implanting neon or other group Zero ions into a semiconductor substrate, preferably silicon, at a sufficiently high energy to created an amorphized region in the interior of the subs...	12/13/1994
5364804	Nitride cap sidewall oxide protection from BOE etch A method of forming a self-aligned contact is disclosed. A pattern of polysilicon gate electrode stack including a silicon oxide gate dielectric, a polysilicon gate electrode, a first thermal polyoxide layer over the top of said polysilicon gate electrode...	11/15/1994
5270244	Method for forming an oxide-filled trench in silicon carbide A method for forming an oxide-filled trench in silicon carbide includes the steps of amorphizing a portion of a monocrystalline silicon carbide substrate to thereby define an amorphous silicon carbide region in the substrate and then oxidizing the amorpho...	12/14/1993
5219766	Semiconductor device having a radiation resistance and method for manufacturing same A semiconductor device having a field insulating film which comprises a semiconductor substrate having an active region and a field region, a first oxide film formed on a surface of the substrate within the field region and etched on an upper surface of t...	06/15/1993
5215934	Process for reducing program disturbance in EEPROM arrays A method by which the gate oxide in an EEPROM device is selectively thickened over the channel region nearest to the drain so as to penalize erase-type behavior during programming of a selected cell. First the lattice structure in a portion of the channel...	06/01/1993
5043292	Self-aligned masking for ultra-high energy implants with application to localized buried implants and insolation structures A self-aligned masking process for use with ultra-high energy implants (implant energies equal to or greater than 1 MeV) is provided. The process can be applied to an arbitrary range of implant energies. Consequently, high doses of dopant may be implanted...	08/27/1991
4957873	Process for forming isolation trenches in silicon semiconductor bodies Isolation trenches are formed in a semiconductor, e.g. silicon, substrate by selectively doping the substrate and preferentially oxidizing the doped material. Typically the dopant is arsenic or phosphorus and preferably the substrate is doped to a level o...	09/18/1990
4818711	High quality oxide on an ion implanted polysilicon surface A method for growing a high quality oxide layer on the surface of a polysilicon film for use as an interpoly dielectric. The method comprises depositing a silicon film on a wafer and implanting the silicon film with phosphorous ions. The wafers are then s...	04/04/1989
4814291	Method of making devices having thin dielectric layers Certain devices require a high quality thin (	03/21/1989
4660276	Method of making a MOS field effect transistor in an integrated circuit A method for making a MOS field effect transistor structure having tungsten silicide contact surfaces for the gate and source and drain regions is disclosed. Protective oxide is very precisely positioned so that a tungsten layer is formed on only selected...	04/28/1987
4597164	Trench isolation process for integrated circuit devices Isolation trenches are formed around selected areas on an integrated circuit device, and highly doped areas are formed in the epitaxial silicon surrounding such trenches. The device is then oxidized at a low temperature, and differential oxidation growth ...	07/01/1986
4552595	Method of manufacturing a semiconductor substrate having dielectric regions A method of manufacturing a semiconductor substrate having dielectric regions is disclosed. The method comprises steps of forming an amorphous silicon layer on the surface of a monocrystalline silicon substrate, annealing a selected surface of said amorph...	11/12/1985
4407696	Fabrication of isolation oxidation for MOS circuit A method is disclosed for fabricating an isolation oxidation (44), also referred to as field oxide, to separate the active regions on the surface of an MOS integrated circuit. On the surface of a semiconductor substrate (24) there are fabricated in succes...	10/04/1983
4157268	Localized oxidation enhancement for an integrated injection logic circuit A device and method are disclosed for incorporating on a single semiconductor chip, integrated injection logic (I2 L) circuits operating at low signal voltages and off chip driver devices operating at relatively high signal voltages. The vertic...	06/05/1979
4098618	Method of manufacturing semiconductor devices in which oxide regions are formed by an oxidation mask disposed directly on a substrate damaged by ion implantation A method of manufacturing semiconductor devices of the type wherein regions of oxide such as silicon oxide recessed or inset in a silicon substrate are formed by oxidation of the silicon with the use of a masking layer protecting locally against the oxida...	07/04/1978

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Class 438/966 - SELECTIVE OXIDATION OF ION-AMORPHOUSIZED LAYER