Class 438/961 - ION BEAM SOURCE AND GENERATION

Subclass of Class 438 - Semiconductor device manufacturing: process
Definition: Art collection involving use of an ion source with the generation
No. of patents: 33
Last issue date: 09/09/2008

Number	Title	Issue Date
7422970	Method for modifying circuit within substrate A method is provided for modifying a circuit containing a plurality of electrodes, within a substrate, comprising the steps of: (a) selecting at least two electrodes for making a connection; (b) removing materials covering the electrodes with a focused ion beam (FIB...	09/09/2008
7405152	Reducing wire erosion during damascene processing A damascene process incorporating a GCIB step is provided. The GCIB step can replace one or more CMP steps in the traditional damascene process. The GCIB step allows for selectable removal of unwanted material and thus, reduces unwanted erosion of certain nearby str...	07/29/2008
7361913	Methods and apparatus for glitch recovery in stationary-beam ion implantation process using fast ion beam control An ion implanter includes a source of a stationary, planar ion beam, a set of beamline components that steer the ion beam along a normal beam path as determined by first operating parameter values, an end station that mechanically scans the wafer across the normal b...	04/22/2008
7202133	Structure and method to form source and drain regions over doped depletion regions A structure and method of reducing junction capacitance of a source/drain region in a transistor. A gate structure is formed over on a first conductive type substrate. We perform a doped depletion region implantation by implanting ions being the second conductive ty...	04/10/2007
7157325	Method for fabricating semiconductor memory device A method for fabricating a semiconductor memory device in which a logic circuit and a nonvolatile memory are provided on a semiconductor substrate includes the steps of: forming an isolation region; forming a protective film made of an insulating material over the s...	01/02/2007
7037732	Method and device for cutting wire formed on semiconductor substrate Method and device for cutting a wire with a small number of processing operations. The method includes forming a cut portion by scanning the semiconductor substrate with a focused ion beam to cut the wire. The method further includes forming a clear region continuou...	05/02/2006
6977204	Method for forming contact plug having double doping distribution in semiconductor device The present invention provides a method for forming a contact plug in a semiconductor device capable of preventing an increase of contact resistance caused by a decrease in dopant concentration and suppressing diffusions of dopants implanted into the contact. The do...	12/20/2005
6965116	Method of determining dose uniformity of a scanning ion implanter Dose uniformity of a scanning ion implanter is determined. A base beam current is measured at the beginning and/or the end of a complete scan over the whole substrate area. This base beam current is measured at a time when the measurement should be unaffected by out...	11/15/2005
6927148	Ion implantation method and method for manufacturing SOI wafer Disclosed are an ion implantation method capable of dramatically increasing an implantation rate of hydrogen ions into a semiconductor substrate and a method for manufacturing an SOI wafer, in which manufacturing efficiency of the SOI wafer is sufficiently high. Whe...	08/09/2005
6872628	Method of manufacturing semiconductor device A gate structure (4), an LDD region (6) and a sidewall (7) are provided in this order. Arsenic ions (8) are thereafter implanted into the upper surface of a silicon substrate (1) by tilted implantation. The next step is annealing f...	03/29/2005
6815311	Method for fabricating semiconductor memory device A method for fabricating a semiconductor memory device is provided to increase the etch selectivity of photoresist by changing the matter properties thereof in forming a trench isolation region. The method includes the steps of: depositing first and second insulatin...	11/09/2004
6762094	Nanometer-scale semiconductor devices and method of making A semiconductor device including a substrate having a dopant of a first polarity, a first semiconducting structure including a dopant of a second polarity disposed over the substrate, and having substantially planar top and side surfaces. The semiconductor device in...	07/13/2004
6555451	Method for making shallow diffusion junctions in semiconductors using elemental doping A method is provided for making ultra-shallow diffused junctions using an elemental dopant. A semiconductor wafer is cleaned for providing a clean reaction surface. The cleaned wafer in loaded onto a stage located in a doping system. A quantity of element...	04/29/2003
6518175	Process for reducing critical dimensions of contact holes, vias, and trench structures in integrated circuits An integrated circuit fabrication process to pattern reduced feature size is disclosed herein. The process includes reducing the width of a patterned area of a patterned photoresist layer provided over a substrate before patterning the substrate. The patt...	02/11/2003
6265327	Method for forming an insulating film on semiconductor substrate surface and apparatus for carrying out the method Disclosed are a method and apparatus for forming an insulating film on the surface of a semiconductor substrate capable of improving the quality and electrical properties of the insulating film with no employment of high-temperature heating and with good ...	07/24/2001
6159867	RF powered plasma enhanced chemical vapor deposition reactor and methods of effecting plasma enhanced chemical vapor deposition Plasma enhanced chemical vapor deposition (PECVD) reactors and methods of effecting the same are described. In accordance with a preferred implementation, a reaction chamber includes first and second electrodes operably associated therewith. A single RF p...	12/12/2000
5907792	Method of forming a silicon nitride layer A method of forming a silicon nitride layer or film on a semiconductor wafer structure includes forming a silicon nitride layer on the surface of a wafer structure using a molecular beam of high purity elemental Si and an atomic beam of high purity nitrog...	05/25/1999
5824598	IC wiring connecting method using focused energy beams An IC wiring connecting method for interconnecting conductive lines of the same wiring plane of an IC chip for correcting the wiring, for interconnecting conductive lines of different wiring lanes of a multilayer IC chip at the same position, or for conne...	10/20/1998
5601654	Flow-through ion beam source A method and an apparatus for forming a charge neutral ion beam which is useful in producing thin films of material on electrically conductive or non-conductive substrates are provided....	02/11/1997
5091048	Ion milling to obtain planarization The surface of a semiconductor wafer is planarized by disposing the wafer in a wafer plane and rotating the wafer within the wafer plane wherein the rotation is around an axis perpendicular to the plane. A stream of particles is transported to the surface...	02/25/1992
4988640	Method of doping and implanting using arsine, antimony, and phosphine substitutes The present invention addresses the use of at least partially fluorinated organometallic compounds in reactive deposition applications. More specifically, the present invention addresses the use of the fluoroorganometallic compounds M(CF3)...	01/29/1991
4942138	Ion-implantation of wiring electrodes of a semiconductor device for hillock reduction An ion-implantation method for wiring electrodes of a semiconductor device comprises irradiating the wiring electrodes with ion beams from at least two directions to prevent occurrence of hillocks....	07/17/1990
4902647	Surface modification using low energy ground state ion beams A method of effecting modifications at the surfaces of materials using low energy ion beams of known quantum state, purity, flux and energy. The ion beam is obtained by bombarding ion-generating molecules with electrons which are also at low energy. The e...	02/20/1990
4740267	Energy intensive surface reactions using a cluster beam Chemical reactions are accomplished at a surface of a substrate by supplying both a chemical reactant and energy by means of a cluster beam of a volatile material. Discrete units containing a volatile reactant are formed into clusters, ionized, accelerate...	04/26/1988
4481042	Ion implantation method An ion implantation method is provided which uses an ion implantation apparatus which is capable of focusing an ion beam into a spot having a diameter smaller than the size of a region into which ions are to be implanted. The ion dose is varied in accorda...	11/06/1984
4457803	Processing method using a focused ion beam A processing method using a focused ion beam is proposed which uses a focused ion beam radiation apparatus. When a specimen is irradiated with the focused ion beam in order to be etched, the desired etching depth of the specimen is preset as a function of...	07/03/1984
4426237	Volatile metal oxide suppression in molecular beam epitaxy systems When growing GaAs by molecular beam epitaxy (MBE), a typical related reaction acts to affix Ga2 O3 to the growth surface and hence incorporates such oxide contaminants in the epitaxial layer as it is grown. Such contaminants may yiel...	01/17/1984
4392453	Molecular beam converters for vacuum coating systems This invention relates to coating of substrates in a vacuum system. A beam of molecules incident upon a molecular beam converter is transformed into a molecular beam flowing from the converter toward a substrate to be coated, or on which a layer is to be ...	07/12/1983
4286545	Apparatus for vapor depositing a stoichiometric compound A method of producing compounds which comprises the steps of separately vaporizing a plurality of substances containing the component elements of a desired compound and placed in a plurality of crucibles to form vapors of the substances, mixing the vapors...	09/01/1981
4278475	Forming of contoured irradiated regions in materials such as semiconductor bodies by nuclear radiation Irradiated regions are formed in materials such as semiconductor bodies by nuclear radiation where the irradiated regions are of a desired thickness, dosage and dosage gradient, a desired distance from a selected surface of the material. A nuclear radiati...	07/14/1981
4227961	Process for forming a single-crystal film A process for forming a thin single-crystal film comprising the steps of heating and vaporizing a film material in a closed type crucible to form vapor of the film material, injecting the vapor into a high vacuum region to form clusters of atoms of said v...	10/14/1980
4187124	Process for doping semiconductors A process and apparatus for doping a substrate by ion implantation or discharge. The process comprises the steps of maintaining an electric discharge in an evacuated enclosure containing a gaseous compound of a dopant for creating ions of said dopant; ext...	02/05/1980
4159919	Molecular beam epitaxy using premixing An improved method of forming ternary and quaternary epitaxial films by molecular beam epitaxy involves controlling precisely the ratio of concentrations of two alloying elements in the final compound by heating predetermined independently adjustable quan...	07/03/1979

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Class 438/961 - ION BEAM SOURCE AND GENERATION