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| Number | Title | Issue Date |
| 7384807 | Method of fabricating vertical structure compound semiconductor devices A method of fabricating a vertical structure opto-electronic device includes fabricating a plurality of vertical structure opto-electronic devices on a crystal substrate, and then removing the substrate using a laser lift-off process. The method then fabricates a me... | 06/10/2008 |
| 7214564 | Method of forming film bulk acoustic wave filter assembly A film bulk acoustic wave filter assembly includes a film bulk acoustic filter and an RF circuit. The film bulk acoustic filter unit cell includes a plurality of film bulk acoustic wave resonators. The number, area and arrangement of the resonators depend on the cha... | 05/08/2007 |
| 7192794 | Fabrication method of transparent electrode on visible light-emitting diode A method for forming a transparent electrode on a visible light-emitting diode is described. A visible light-emitting diode element is provided, and the visible light-emitting diode element has a substrate, an epitaxial structure and a metal electrode. The metal ele... | 03/20/2007 |
| 7074631 | Light emitting device methods A method includes disposing a planarization layer on a surface of a layer of semiconductor material and disposing a lithography layer on a surface of the planarization layer. The method also includes performing nanolithography to remove at least a portion of the pla... | 07/11/2006 |
| 6969626 | Method for forming LED by a substrate removal process The present invention relates to a method for forming LED. In the present invention, LED dies are defined by photolithography and etching processes to replace a cutting step, and a metal substrate of the LED is formed by chemical or physical method. ... | 11/29/2005 |
| 6872672 | Method of manufacturing an electro-optical device An object of the invention is reducing a manufacturing cost of an EL display device and an electronic device equipped therewith. In an active matrix type EL display device, an EL material for a pixel portion is formed by coating steps using a dispenser device. As a ... | 03/29/2005 |
| 6773948 | Semiconductor light emitting device and method for producing the same A semiconductor light emitting device of the present invention includes: a substrate; a light emitting layer; a semiconductor layer of a hexagonal first III-group nitride crystal; and a cladding layer of a second III-group nitride crystal. A stripe groove is provide... | 08/10/2004 |
| 6756325 | Method for producing a long wavelength indium gallium arsenide nitride(InGaAsN) active region Several methods for producing an active region for a long wavelength light emitting device are disclosed. In one embodiment, the method comprises placing a substrate in an organometallic vapor phase epitaxy (OMVPE) reactor, the substrate for supporting growth of an ... | 06/29/2004 |
| 6468818 | Method for producing a high-luminance semiconductor light-emitting device capable of operating at a low voltage A semiconductor light-emitting device has a light-emitting section comprised of at least a lower clad layer, an active layer and an upper clad layer which are formed on a compound semiconductor substrate and a layer grown on the upper clad layer of the li... | 10/22/2002 |
| 6399407 | Methods of electrostatic control in semiconductor devices A semiconductor light-emitting device having one or more depletion regions that are controlled by one or more control electrodes to vary the spatial distribution of the carriers in an active layer. The voltages on the control electrodes can be controlled ... | 06/04/2002 |
| 6258615 | Method of varying a characteristic of an optical vertical cavity structure formed by metalorganic vapor phase epitaxy A process for forming an array of vertical cavity optical resonant structures wherein the structures in the array have different detection or emission wavelengths. The process uses selective area growth (SAG) in conjunction with annular masks of differing... | 07/10/2001 |
| 6103555 | Method of improving the reliability of low-voltage programmable antifuse The reliability of an antifuse can be increased and/or the thickness of the antifuse dielectric can be decreased by the use of a rapid thermal nitridation nitride layer as part of the antifuse dielectric. The RTN nitride layer is denser and has fewer pinh... | 08/15/2000 |
| 6033926 | Method for making multiple wavelength semiconductor lasers on a single wafer A plurality of different wavelength semiconductor lasers are fabricated on a single semiconductor substrate by establishing a thermal gradient across the substrate during epitaxial growth. The result is a variation in composition which produces a correspo... | 03/07/2000 |
| 5854089 | Semiconductor device by selectively controlling growth of an epitaxial layer without a mask A semiconductor structure including: a substrate having a step portion; a first semiconductor layer formed on a region of the substrate which is selectively irradiated by light at an angle with respect to the projecting portion by using the step portion a... | 12/29/1998 |
| 5397740 | Method of making an optical semiconductor device First and second junctions are set so as to control electric fields applied to an active layer, independent from each other, and the electric field applied by the first junction controls exciting conditions while the electric field applied by the second j... | 03/14/1995 |
| 4888085 | Processes for their manufacture of monolithically integrated planar lasers differing in emission wavelengths Lasers differing in emission wavelengths are disclosed monolithically integrated in a common substrate providing positive index guiding of adjacent lasers. The lasers and the substrate together present a planar semiconductive surface. The monolithically i... | 12/19/1989 |
| 4879250 | Method of making a monolithic interleaved LED/PIN photodetector array Interleaved arrays of photoelectronic devices are fabricated utilizing one-step epitaxial growth of all active layers and simple planar processing. Exemplary arrays include interleaved LED transmitters and PIN photodiode receivers that operate at the same... | 11/07/1989 |
| 4843031 | Method of fabricating compound semiconductor laser using selective irradiation Disclosed is a method of fabricating a compound semiconductor device which is capable of forming a multi-wavelength semiconductor laser structure, double cavity type semiconductor laser structure, stripe type semiconductor laser structure transverse junct... | 06/27/1989 |
| 4148045 | Multicolor light emitting diode array Multicolor light emitting diode arrays can be made using a binary semiconductor substrate on which is grown a graded epitaxial region of an AB1-x Cx semiconductor. Diodes emitting various light colors can selectively be formed in dif... | 04/03/1979 |
