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Actor Marlon Brando has four patents, all named "Drumhead tensioning device and method."
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| Number | Title | Issue Date |
| 7115503 | Method and apparatus for processing thin metal layers A method and apparatus for processing a thin metal layer on a substrate to control the grain size, grain shape, and grain boundary location and orientation in the metal layer by irradiating the metal layer with a first excimer laser pulse having an intensity pattern... | 10/03/2006 |
| 6869863 | Fabrication process of solar cell Metal-grade silicon is melted and solidified in a mold to form a plate-shaped silicon layer and a crystalline silicon layer is made thereon, thereby providing a cheap solar cell without a need for a slicing step. ... | 03/22/2005 |
| 6809015 | Method for heat treatment of silicon wafers and silicon wafer According to the present invention, there are provided a method for heat treatment of silicon wafers wherein a silicon wafer is subjected to a heat treatment at a temperature of from 1000° C. to the melting point of silicon in an inert gas atmosphere, and temperatu... | 10/26/2004 |
| 6387780 | Fabrication process of solar cell Metal-grade silicon is melted and solidified in a mold to form a plate-shaped silicon layer and a crystalline silicon layer is made thereon, thereby providing a cheap solar cell without a need for a slicing step.... | 05/14/2002 |
| 5821134 | Method of manufacturing an optoelectronic device Disclosed is a method of producing an electron-absorption modulator having a reverse mesa structure. In the electron-absorption modulator, a first clad of a first conductivity type, an active layer of the first conductivity type, a second clad layer of a ... | 10/13/1998 |
| 5786234 | Method of fabricating semiconductor laser A method of fabricating a semiconductor laser includes successively epitaxially growing on a first conductivity type semiconductor substrate, a first conductivity type lower cladding layer, an active layer, a second conductivity type first upper cladding ... | 07/28/1998 |
| 5643827 | GaP light emitting substrate and a method of manufacturing it A GaP light emitting element substrate comprising an n-type GaP layer, a nitrogen-doped n-type GaP layer and a p-type GaP layer layered one after another on a multi-layer GaP substrate built by forming an n-type GaP buffer layer(s) on an n-type GaP single... | 07/01/1997 |
| 5401684 | Method of manufacturing a light-emitting semiconductor device substrate Disclosed are a light-emitting semiconductor device substrate and a method of manufacturing the same. The substrate is prepared by causing a Ga1-x Alx As compound semiconductor single crystalline thick-film layer having a first AlAs ... | 03/28/1995 |
| 5236864 | Method of manufacturing a surface-emitting type semiconductor laser device A method of manufacturing a surface-emitting-type semiconductor laser device having a buried structure. A GaAlAs film is used as a mask layer in forming a GaAlAs/GaAs system burying part around a GaAlAs/GaAs system buried part. The mask layer can be forme... | 08/17/1993 |
| 4994143 | Method for manufacturing a buried heterostructure laser diode A method for manufacturing a buried heterostructure laser diode comprising an active layer and a clad layer which are formed as a reverse mesa on a substrate, current blocking layers and an insulation layer deposited on the top of the blocking layers, and... | 02/19/1991 |
| 4876210 | Solution growth of lattice mismatched and solubility mismatched heterostructures The effects of excessive lattice mismatch in solution grown heterostructures are reduced by incorporating a lattice graded interface layer between the substrate and the heteroepitaxial layer. The effects of lattice mismatch are also reduced by reducing th... | 10/24/1989 |
| 4840916 | Process for fabricating an avalanche photodiode Disclosed is an avalanche photodiode wherein a light absorption layer and a multiplication layer are first grown on substrate. The multiplication layer is then mesa-etched and another semiconductor layer is second grown on the mesa-etched multiplication l... | 06/20/1989 |
| 4818722 | Method for generating a strip waveguide A method for generating a strip laser in a buried hetero-structure composed of layers, wherein a raised strip is etched out of the layer structure and the strip is laterally etched with an erosion melt. The lateral edges of the laser active layer are prot... | 04/04/1989 |
| 4728625 | Method of fabricating buried crescent semiconductor laser device by removing a surface portion of substrate around a groove therein A method of fabricating a semiconductor laser stably operable at high temperatures over long periods of time and with a low leakage current. A semiconductor wafer is prepared including a semiconductor substrate of a first conductivity type and a current b... | 03/01/1988 |
| 4662983 | Multiple meltback procedure for LPE growth on InP A multiple meltback procedure is described for removing gross contaminants and thermal degradation from InP-containing surfaces. Prior to LPE growth on an InP substrate, the substrate surface is brought into contact briefly (.ltorsim.1 sec) with an essent... | 05/05/1987 |
| 4547230 | LPE Semiconductor material transfer method A method for liquid phase epitaxy maskless deposition of a III-V compound on a substrate in a pre-determined pattern includes the steps of contacting a growth wafer having a patterned mask thereon to a growth solution in equilibrium and then increasing th... | 10/15/1985 |
| 4404730 | Method of producing luminescent or laser diodes having an internally limited luminescent surface A luminescent or laser diode having a pn-junction surrounding an internally limited luminescent surface area and limiting current flow in the diode is produced by etching a select semiconductor substrate so as to produce a mesa dimensioned accordingly to ... | 09/20/1983 |
| 4376663 | Method for growing an epitaxial layer of CdTe on an epitaxial layer of HgCdTe grown on a CdTe substrate Disclosed is a method of growing a layer of CdTe on HgCdTe by liquid phase epitaxy. The solution for growth comprises Sn and Hg with a small amount of CdTe. A typical composition is Sn:Hg:CdTe=36:5:0.15 parts by weight. The growth temperature is a functio... | 03/15/1983 |
| 4373989 | Controlled in situ etch-back A controlled in situ etch-back technique is disclosed in which an etch melt 17 and a growth melt 18 are first saturated by a source-seed crystal 15 and thereafter etch-back of a substrate 14 takes place by the slightly undersaturated etch melt, followed b... | 02/15/1983 |
| 4372808 | Process for removing a liquid phase epitaxial layer from a wafer A process for removing a liquid phase epitaxial layer of material from a wafer substrate is disclosed. An etch melt is provided which is substantially the same as that used to grow the epitaxial layer on the wafer surface. The temperature of the etch melt... | 02/08/1983 |
| 4263065 | Semi-open liquid phase epitaxial growth system A semi-open method for growing an epitaxial layer on a substrate by increasing the pressure, refluxing the volatile components, contacting the substrate with the melt solution, and reducing the solution temperature.... | 04/21/1981 |
| 4178195 | Semiconductor structure A technique for fabricating a semiconductor heterostructure by growth of a ternary semiconductor on a binary semiconductor substrate from a melt of the ternary semiconductor containing less than saturation of at least one common ingredient of both the bin... | 12/11/1979 |
| 4012242 | Liquid epitaxy technique In a preferred embodiment, a technique and associated apparatus for producing heteroepitaxial semi-conductor junctions preferably for Group III-V compounds in an improved liquid-solid transport method, placing a prescribed doped "limited-volume" melt dire... | 03/15/1977 |
| 3983510 | Semiconductor double heterostructure laser device and method of making the same A strip-geometry semiconductor double-heterostructure laser device includes an n-GaAs substrate on which a first layer of n-Alx Ga1-x As and a second layer of p-AlyGa1-y As are formed by epitaxial growth techniques. A thir... | 09/28/1976 |
| 3967987 | Epitazy of heterojunction devices A method of producing light emitting diodes of high quantum efficiency in mass production by utilizing an epitaxial deposition from a small size melt such that the substrate itself serves as a saturation source. A silicon doped gallium arsenide wafer is c... | 07/06/1976 |
| 3960618 | Epitaxial growth process for compound semiconductor crystals in liquid phase In an epitaxial growth process for compound semiconductor crystals in a liquid phase, a substrate crystal is brought into contact with an etching solution containing as solute a predetermined amount of at least one constituent of the substrate crystal, wh... | 06/01/1976 |
