Class 438/937 - HILLOCK PREVENTION

Subclass of Class 438 - Semiconductor device manufacturing: process
Definition: Art collection involving the prevention of spikelike projections
No. of patents: 38
Last issue date: 09/12/2006

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Number	Title	Issue Date
7105451	Method for manufacturing semiconductor device A resist pattern formed so as to expose a wafer edge region is used to expose an edge surface region of an Si support substrate by dry etching. Next, a conductive layer constituted as wirings by subsequent patterning is formed by sputtering. ...	09/12/2006
6893905	Method of forming substantially hillock-free aluminum-containing components An aluminum-containing film having an oxygen content within the film. The aluminum-containing film is formed by introducing hydrogen gas and oxygen gas along with argon gas into a sputter deposition vacuum chamber during the sputter deposition of aluminum or aluminu...	05/17/2005
6764951	Method for forming nitride capped Cu lines with reduced hillock formation The electromigration resistance of nitride capped Cu lines is significantly improved by treating the exposed planarized surface of inlaid Cu with a plasma containing NH3, depositing a silicon nitride capping layer at reduced temperatures, and then laser t...	07/20/2004
6573127	Thin-film transistor and method of making same A thin-film transistor includes a substrate and a gate including a double-layered structure-having first metal layer formed of a material exhibiting tensile stress and second metal layer formed of a metal exhibiting compressive stress, the first metal lay...	06/03/2003
6518179	Method of controlling hillock formation of platinum thin film of semiconductor memory device by ion bombardment A method of forming metal thin film of a memory device includes the steps of forming a metal layer on a semiconductor substrate, forming uniform grains on a surface of the metal layer, and forming a dielectric layer on the metal layer....	02/11/2003
6455939	Substantially hillock-free aluminum-containing components An aluminum-containing film having an oxygen content within the film. The aluminum-containing film is formed by introducing hydrogen gas and oxygen gas along with argon gas into a sputter deposition vacuum chamber during the sputter deposition of aluminum...	09/24/2002
6268274	Low temperature process for forming inter-metal gap-filling insulating layers in silicon wafer integrated circuitry This invention provides an in situ low temperature, two step deposition HDP-CVD process separated by a cooldown period, for forming an inter-metal dielectric passivation layer for an integrated circuit structure. Said process mitigating metal line defects...	07/31/2001
6222271	Method of using hydrogen gas in sputter deposition of aluminum-containing films and aluminum-containing films derived therefrom Aluminum containing films having an oxygen content within the films. The aluminum-containing film is formed by introducing hydrogen gas along with argon gas into a sputter deposition vacuum chamber during the sputter deposition of aluminum or aluminum all...	04/24/2001
6211075	Method of improving metal stack reliability A method for increasing electromigration resistance within the metal stack layer of Wolfram plugs by applying air exposure or plasma treatment to the top surface of the first layer of metal within the metal stack layer that is formed on top of metal plugs...	04/03/2001
6194783	Method of using hydrogen gas in sputter deposition of aluminum-containing films and aluminum-containing films derived therefrom Aluminum-containing films having an oxygen content within the films. The aluminum-containing film is formed by introducing hydrogen gas along with argon gas into a sputter deposition vacuum chamber during the sputter deposition of aluminum or aluminum all...	02/27/2001
6107688	Aluminum-containing films derived from using hydrogen and oxygen gas in sputter deposition An aluminum-containing film having an oxygen content within the film. The aluminum-containing film is forced by introducing hydrogen gas and oxygen gas along with aragon gas into a sputter deposition vacuum chamber during the sputter deposition of aluminu...	08/22/2000
6071796	Method of controlling oxygen incorporation during crystallization of silicon film by excimer laser anneal in air ambient The invention provides a method of making silicon-on-glass substrates used in the manufacture of flat panel displays. A layer of amorphous silicon film is deposited on a glass substrate. The amorphous silicon is annealed by excimer laser annealing, transf...	06/06/2000
6060386	Method and apparatus for forming features in holes, trenches and other voids in the manufacturing of microelectronic devices The present invention is a method and apparatus for filling voids in a substrate with a desired material to form conductive components and/or other features on the substrate. In one embodiment in accordance with the principles of the present invention, a ...	05/09/2000
6057238	Method of using hydrogen and oxygen gas in sputter deposition of aluminum-containing films and aluminum-containing films derived therefrom An aluminum-containing film having an oxygen content within the film. The aluminum-containing film is formed by introducing hydrogen gas and oxygen gas along with argon gas into a sputter deposition vacuum chamber during the sputter deposition of aluminum...	05/02/2000
6025892	Active matrix substrate with removal of portion of insulating film overlapping source line and pixel electrode and method for producing the same An active matrix substrate of the present invention includes: a substrate; a plurality of first lines formed on the substrate to be parallel to each other; an insulating film covering the first lines; a plurality of second lines formed on the substrate ex...	02/15/2000
6010958	Method for improving the planarization of dielectric layer in the fabrication of metallic interconnects A method for improving the planarization of a dielectric layer in the fabrication of metallic interconnects wherein a rapid thermal processing operation is used in order to consolidate exposed surfaces of a dielectric layer after local planarization of th...	01/04/2000
5759912	Method of manufacturing a semiconductor device having multi-layered wiring without hillocks at the insulating layers An Al alloy interconnection layer is deposited on a silicon oxide layer, and a first carbon layer is formed on the Al alloy interconnection layer. Then, the first carbon layer and the Al alloy interconnection layer are patterned, thereby forming a first i...	06/02/1998
5747361	Stabilization of the interface between aluminum and titanium nitride A semiconductor device comprises at least one metal interconnect layer, a titanium-based barrier layer in contact with the metal interconnect layer. The metal interconnect layer contains titanium in an amount up to the limit of solid solubility at the per...	05/05/1998
5672543	Volcano defect-free tungsten plug A new method of metallization using a tungsten plug is described. Semiconductor device structures are provided in and on a semiconductor substrate. An insulating layer covers the semiconductor device structures wherein a contact opening is made through th...	09/30/1997
5498571	Method of manufacturing a semiconductor device having reliable multi-layered wiring An Al alloy interconnection layer is deposited on a silicon oxide layer, and a first carbon layer is formed on the Al alloy interconnection layer. Then, the first carbon layer and the Al alloy interconnection layer are patterned, thereby forming a first i...	03/12/1996
5356659	Metallization for semiconductor devices A low temperature chemical vapor deposition process is used to encapsulate aluminum conductors on the surface of a silicon substrate to form bimetallic conductors. The refractory material is desirably tungsten....	10/18/1994
5328873	Process for forming deposited film by use of alkyl aluminum hydride A process for forming an Al film of good quality according to the CVD method utilizing the reaction between alkyl aluminum hydride and hydrogen, which is an excellent deposited film formation process also capable of selective deposition of Al....	07/12/1994
5148259	Semiconductor device having thin film wiring layer of aluminum containing carbon A semiconductor device comprises one or a plurality of thin film wiring layers made of aluminum containing carbon, so as to obtain hillock-free wiring layers. A method of forming the thin film wiring layer employs a plasma-enhanced chemical vapor depositi...	09/15/1992
5082801	Process for producing multilayer interconnection for semiconductor device with interlayer mechanical stress prevention and insulating layers The present invention is directed to a process for producing a semiconductor device that has a multilayer interconnection composed of a plurality of conductive layers electrically separated from each other by interlayer insulating layers inserted therebet...	01/21/1992
5040048	Metal interconnection layer having reduced hillock formation A semiconductor device having multilayer interconnections with reduced formation of hillocks is provided. An Al wiring layer formed on a substrate is patterned for Al wirings. Impurity ions such as Al, Ar, As, P and Sb or the like are implanted on the ent...	08/13/1991
4992152	Reducing hillocking in aluminum layers formed on substrates A method of reducing hillocks in an aluminum layer sputtered onto a substrate includes depositing a layer of WSi2 on the aluminum layer having a thickness of between 1500-2500 Å and then sintering these bilayers....	02/12/1991
4786962	Process for fabricating multilevel metal integrated circuits and structures produced thereby The specification describes a multilevel metal CMOS integrated circuit wherein a first or lower level of metallization comprises strips of tungsten over aluminum. These strips are connected through vias in an inter-metal dielectric layer to an upper or se...	11/22/1988
4740481	Method of preventing hillock formation in polysilicon layer by oxygen implanation Hillock formation as a result of heating uncapped polycrystalline silicon layers can be avoided by first implanting the uncapped poly layers with silicon, oxygen, or nitrogen prior to heating. Equivalent mono-atomic oxygen or nitrogen doses in the range o...	04/26/1988
4728627	Method of making multilayered interconnects using hillock studs formed by sintering A method of manufacturing a semiconductor device comprising the steps of preparing a semiconductor substrate on which a first insulation film is formed, forming a first conductive layer on the first insulation film, forming a hillock of the first conducti...	03/01/1988
4704367	Suppression of hillock growth through multiple thermal cycles by argon implantation A technique for suppressing hillock growth in metal films on integrated circuits through multiple thermal cycles by argon implantation. Although it was known that ion implantation of many species such as arsenic suppressed the growth of hillocks in metal ...	11/03/1987
4680854	Forming low resistivity hillock free conductors in VLSI devices Particularly for use in MOS (metal-oxide-semiconductor) VLSI (very large scale integrated) circuits, an aluminum conductor coated with a layer of refractory metal or refractory metal silicide has the advantages of being resistant both to electromigration ...	07/21/1987
4620986	MOS rear end processing A process for the reduction of defect formation in conductive layers of semiconductor bodies during patterning, alloying and passivation. A film of low temperature spin-on-glass containing dye is formed on the conductive layer prior to patterning and any ...	11/04/1986
4587138	MOS rear end processing A process for the reduction of defect formation in conductive layers of semiconductor bodies during patterning, alloying and passivation. A film of low temperature spin-on-glass containing dye is formed on the conductive layer prior to patterning and any ...	05/06/1986
4525733	Patterning method for reducing hillock density in thin metal films and a structure produced thereby Hillock formation in a thin film of metal having a high coefficient of thermal expansion on a substrate having a low coefficient of thermal expansion is reduced by patterning the substrate in an area normally free from such pattern, specifically for the p...	06/25/1985
4525221	Alloying of aluminum metallization An improvement in the rapid alloying of aluminum metallization on a silicon substrate is provided. The structure is heated to alloying temperature for under a minute in a suitable heating means in a reducing atmosphere and rapidly cooled to under 200° C....	06/25/1985
4433004	Semiconductor device and a method for manufacturing the same A semiconductor device is disclosed which includes a semiconductor substrate; a metal wiring layer comprising an Al alloy formed on the surface of this substrate; and an alumina layer covering this metal layer and containing at least one metal selected fr...	02/21/1984
4123565	Method of manufacturing semiconductor devices A semiconductor device comprises a semiconductor substrate, an insulating layer formed on one surface of the semiconductor substrate, a wiring layer formed on at least a portion of that area of the semiconductor substrate where no insulating layer is form...	10/31/1978
3986897	Aluminum treatment to prevent hillocking A method of surface treating aluminum, particularly aluminum metallization for semiconductors, which includes subjecting the aluminum surface to be treated with fuming nitric acid for one to ten minutes at room temperature. Following cleaning, the surface...	10/19/1976

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Class 438/937 - HILLOCK PREVENTION