Bizarre Patents
Pneumatic Shoe Lacing Apparatus
This invention provides a pneumatic shoe lacing apparatus for the pneumatic lacing of shoe.
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 7273809 | Method of fabricating a conductive path in a semiconductor device A method for fabricating an ultra-small electrode or plug contact for use in chalcogenide memory cells specifically, and in semiconductor devices generally, in which disposable spacers are utilized to fabricate ultra-small pores into which the electrodes are formed.... | 09/25/2007 |
| 7176075 | Field effect transistor and method of fabrication The present invention is a novel field effect transistor having a channel region formed from a narrow bandgap semiconductor film formed on an insulating substrate. A gate dielectric layer is formed on the narrow bandgap semiconductor film. A gate electrode is then f... | 02/13/2007 |
| 6939772 | Bipolar transistor and fabrication method thereof A SiGe spacer layer 151, a graded SiGe base layer 152 including boron, and an Si-cap layer 153 are sequentially grown through epitaxial growth over a collector layer 102 on an Si substrate. A second deposited oxide film 112 having ... | 09/06/2005 |
| 6806502 | 3-5 Group compound semiconductor and light emitting device Provide is a 3-5 group compound semiconductor having a concentration of a p-type dopant of 1×1017 cm− or more and 1×1021 cm−3 or less, which can be laminated to control the carrier concentration of an InGaAlN-type mi... | 10/19/2004 |
| 6794211 | Light emitting diode and method of fabricating thereof The light emitting diode includes an intermediate layer made of non-single crystalline material between single crystalline layers. By the intermediate layer, the boundary characteristic between the single crystalline layers may be improved and the defect caused by t... | 09/21/2004 |
| 6756325 | Method for producing a long wavelength indium gallium arsenide nitride(InGaAsN) active region Several methods for producing an active region for a long wavelength light emitting device are disclosed. In one embodiment, the method comprises placing a substrate in an organometallic vapor phase epitaxy (OMVPE) reactor, the substrate for supporting growth of an ... | 06/29/2004 |
| 6703300 | Method for making multilayer electronic devices There is a method for forming a multilayer electronic device. The method has the following steps: a) depositing a thin molecular layer on an electrically conductive substrate and b) depositing metal atoms or ions on the thin molecular layer at an angle of... | 03/09/2004 |
| 6699778 | Masking method for producing semiconductor components, particularly a BH laser diode A method produces structures for semiconductor components, particularly BH laser diodes, in which a mask material is applied to a sample in a masking step. The etch rate in an etching step depends upon the composition and/or nature of the mask material. T... | 03/02/2004 |
| 6686281 | Method for fabricating a semiconductor device and a substrate processing apparatus A substrate processing apparatus for forming a boron doped silicon-germanium film on one or more substrates in a reaction furnace of a low pressure CVD apparatus uses a mixture gas of GeH4 and SiH4 as a reaction gas, and BCl3 | 02/03/2004 |
| 6482672 | Using a critical composition grading technique to deposit InGaAs epitaxial layers on InP substrates A method for growing Inx Ga1-x As epitaxial layer on a lattice mismatched InP substrate calls for depositing by organo-metallic vapor phase epitaxy, or other epitaxial layer growth technique, a plurality of discreet layers of InAs | 11/19/2002 |
| 6468818 | Method for producing a high-luminance semiconductor light-emitting device capable of operating at a low voltage A semiconductor light-emitting device has a light-emitting section comprised of at least a lower clad layer, an active layer and an upper clad layer which are formed on a compound semiconductor substrate and a layer grown on the upper clad layer of the li... | 10/22/2002 |
| 6033945 | Multiple equilibration circuits for a single bit line According to one embodiment, a memory device comprises a bit line operable to access a memory cell. The bit line has a first end and a second end. A first equilibration circuit is coupled to the first end of the bit line, and a second equilibration circui... | 03/07/2000 |
| 6033926 | Method for making multiple wavelength semiconductor lasers on a single wafer A plurality of different wavelength semiconductor lasers are fabricated on a single semiconductor substrate by establishing a thermal gradient across the substrate during epitaxial growth. The result is a variation in composition which produces a correspo... | 03/07/2000 |
| 5985689 | Method of fabricating photoelectric conversion device having at least one step-back layer A photoelectric conversion device includes a plurality of photoelectric conversion units and a signal output unit. The signal output unit has at least one storage device for storing electrical signals generated by the photoelectric conversion device. A sc... | 11/16/1999 |
| 5714777 | Si/SiGe vertical junction field effect transistor A junction field effect transistor and method for making is described incorporating horizontal semiconductor layers within an opening to form a channel and a semiconductor layer through which the opening was made which forms a gate electrode surrounding t... | 02/03/1998 |
| 5670414 | Graded-gap process for growing a SiC/Si heterojunction structure The present invention relates to a graded-gap process for forming a SiC/Si heterojunction electrical element and includes steps of a) provide a Si substrate; b) introduce a hydrogen containing gas stream to the Si substrate; c) introduce a silane-containi... | 09/23/1997 |
| 5656514 | Method for making heterojunction bipolar transistor with self-aligned retrograde emitter profile A high gain, high frequency transistor is formed having a combination of a moderately doped retrograde emitter and a collector which is formed by self-aligned implantation through an emitter opening window. This combination allows continued base width sca... | 08/12/1997 |
| 5631173 | Method for forming collector up heterojunction bipolar transistor having insulative extrinsic emitter A process and structure for an improved collector-up bipolar transistor. The base is formed after the emitter is implanted to eliminate base damage during oxygen implantation typical in prior art collector-up bipolar transistors. In a preferred embodiment... | 05/20/1997 |
| 5571732 | Method for fabricating a bipolar transistor In one form of the invention, a bipolar transistor is disclosed, the transistor comprising a GaAs substrate in the (111) orientation 100, and an InGaAs region 106 over the substrate 100, the InGaAs region 106 having a first surface and a second surface, w... | 11/05/1996 |
| 5525541 | Method of making an electronic and/or photonic component A method of making a component presenting at least one integrated electro-optical and/or photonic function, in which at least one dielectric layer of doped SiOx is deposited on a quantum well layer based on III/V materials, and in which the res... | 06/11/1996 |
| 5525539 | Method for forming a light emitting diode for use as an efficient emitter or detector of light at a common wavelength An infrared LED can function efficiently as both an emitter and a detector at a common wavelength without undesirable characteristics found in avalanche diodes. The LED comprises a graded-bandgap Ga1-x Alx As semiconductor material w... | 06/11/1996 |
| 5429957 | Method of manufacturing an heterojunction bipolar transistor A base layer interposed between an n-type GaAs collector layer and an n-type AlGaAs emitter layer is composed of a p-type InAlGaAs. From a collector/base interface to an emitter/base interface, an InAs composition of the base layer is decreased and a conc... | 07/04/1995 |
| 5400352 | Semiconductor laser and method therefor A semiconductor laser (10) utilizes a material having a first band gap (26) for an active layer (13) of the laser (10). Monolayers (14) of a material having a smaller band gap are positioned in the active layer (13) without substantially altering the firs... | 03/21/1995 |
| 5389554 | Method for fabricating microwave heterojunction bipolar transistors with emitters designed for high power applications In one form of the invention, an emitter structure for a bipolar transistor is disclosed. The structure is comprised of an emitter layer 6 of Alx Ga1-x As, where x>0.4, abutting a base layer 8.... | 02/14/1995 |
| 5378640 | Method of fabricating a transmission mode InGaAs photocathode for night vision system An improved photocathode for use in a night vision system, comprising a glass face plate, an AlInAs window layer having an anti-reflection and protective coating bonded to the face plate, an InGaAs active layer epitaxially grown to the window layer, and a... | 01/03/1995 |
| 5372658 | Disordered crystalline semiconductor A semiconductor material having a disordered structure consists of a semiconductor material on which epitaxial growth is possible. The semiconductor material has an energy band structure constituted by one of the indirect band structure, the direct band s... | 12/13/1994 |
| 5372970 | Method for epitaxially growing a II-VI compound semiconductor A method for epitaxially growing a II-VI compound semiconductor according to this invention comprises the steps of epitaxially growing a GaAsx Se1-x layer on a GaAs substrate and epitaxially growing a ZnSe layer or a compound semicon... | 12/13/1994 |
| 5366927 | Method of fabricating epitaxially deposited ohmic contacts using group II-V I An ohmic contact to a p-type zinc selenide (ZnSe) layer in a Group II-VI semiconductor device, includes a zinc telluride selenide (ZnTex Se1-x) layer on the zinc selenide layer, a mercury selenide (HgSe) layer on the zinc telluride s... | 11/22/1994 |
| 5352912 | Graded bandgap single-crystal emitter heterojunction bipolar transistor A heterojunction bipolar transistor having a single-crystal emitter with reduced charge storage and acceptable current gain is described herein. The heterojunction transistor comprises a collector region, a base region formed on the collector region, and ... | 10/04/1994 |
| 5284783 | Method of fabricating a heterojunction bipolar transistor A method of fabricating a semiconductor device having an epitaxial layer of a group III-V semiconductor material provided on an underlying crystal layer with a lattice matching therewith, the semiconductor material being doped to the p-type by addition of... | 02/08/1994 |
| 5281299 | Method for manufacturing a crystal with a lattice parameter gradient A method for manufacturing a crystal comprising at least two elements wherein the proportion of at least one of the elements varies in the direction of the thickness. A CVD process is used. The proportion of the gas components from which is formed the dep... | 01/25/1994 |
| 5225371 | Laser formation of graded junction devices A method for fabricating graded heterojunction electronic devices uses laser melting and recrystallization of layered films to create an epitaxial alloy heterojunction. Layering an appropriately doped polysilicon film over a germanium film that has been d... | 07/06/1993 |
| 5204284 | Method of making a high band-gap opto-electronic device A high band-gap opto-electronic device is formed by epitaxially growing the device section in a lattice-matched (Alx Ga1-x)y In1-y P-GaAs system. The band-gap of the epitaxial layer increases with x. Instead of ... | 04/20/1993 |
| 5192695 | Method of making an infrared detector HgCdTe semiconductor material having an n-type epitaxial layer is grown on a substrate. A graded p-type epitaxial layer is grown on the n-type layer. The p-type layer is graded such that the large bandgap region is adjacent the heterojunction with the nar... | 03/09/1993 |
| 5192711 | Method for producing a semiconductor laser device A visible light semiconductor laser device has a double heterojunction structure comprising AlGaInP series semiconductors which is produced on a substrate having an electrode on its rear surface. A a p type GaInP buffer layer is provided between a p type ... | 03/09/1993 |
| 5177025 | Method of fabricating an ultra-thin active region for high speed semiconductor devices A method of fabricating a semiconductor device to retard diffusion of a dopant from a center active region into adjacent regions. The center active region is epitaxially formed by selectively increasing and decreasing an introduction of diffusion-suppress... | 01/05/1993 |
| 5162243 | Method of producing high reliability heterojunction bipolar transistors A technique for producing high reliability GaAsAlGaAs heterojunction bipolar transistors by Molecular Beam Epitaxy with beryllium base doping. Beryllium incorporation and diffusion, during base-layer deposition, is controlled through a combination of redu... | 11/10/1992 |
| 5147817 | Method for forming programmable resistive element A programmable resistive element is provided which includes a channel 16 comprising a layer of gallium arsenide. A programming barrier 18 is disposed outwardly from channel 16. A storage gate 20 comprising a layer of intrinsic gallium arsenide is disposed... | 09/15/1992 |
| 5034342 | Method of forming semiconductor stalk structure by epitaxial growth in trench A moat having a flat bottom and tapered side walls is formed in a monocrystalline silicon body (substrate) and extends from a top surface of the substrate into the substrate. An oxide layer is grown over side walls and a bottom of the moat and then is sel... | 07/23/1991 |
| 5021360 | Method of farbicating highly lattice mismatched quantum well structures A method of fabricating a semiconductor heterostructure includes the growth of a quantum well active region that is highly lattice-mismatched relative to a substrate. A buffer layer having a thickness above a critical value is grown on the substrate where... | 06/04/1991 |
