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| Number | Title | Issue Date |
| 7101779 | Method of forming barrier layers Mixed metal aluminum nitride and boride diffusion barriers and electrodes for integrated circuits, particularly for DRAM cell capacitors. Also provided are methods for CVD deposition of MxAlyNzBw alloy diffusion barriers, ... | 09/05/2006 |
| 7056842 | Method and apparatus for non-aggressive plasma-enhanced vapor deposition of dielectric films According to the invention, while performing plasma-enhanced chemical vapor deposition on a substrate by exposing the substrate in a vacuum to a flow of particles generated by a plasma, which particles react to form a passivation layer on the substrate, a grid is in... | 06/06/2006 |
| 6960537 | Incorporation of nitrogen into high k dielectric film A high k dielectric film and methods for forming the same are disclosed. The high k material includes two peaks of impurity concentration, particularly nitrogen, such as at a lower interface and upper interface, making the layer particularly suitable for transistor ... | 11/01/2005 |
| 6617668 | Methods and devices using group III nitride compound semiconductor A layer comprising silicon oxide (SiO2) is formed on (111) plane of a silicon (Si) substrate in a striped pattern which is longer in the [1-10] axis direction perpendicular to the [110] axis direction. Then a group III nitride compound semicond... | 09/09/2003 |
| 5624853 | Method for forming heterojunction bipolar transistors A pnp transistor is formed having a heterojunction of p-type diamond (or BPx N1-x, 6HSiC) and n-type SiC (3CSiC). The transistor is formed such that a p+ -SiC (3CSiC) layer, a p-SiC (3CSiC) layer, an n+ -SiC (3C... | 04/29/1997 |
| 5476812 | Semiconductor heterojunction structure A semiconductor heterojunction structure comprising a p-type diamond layer and an n-type cubic boron nitride layer on a surface of said p-type diamond layer. Such heterojunction structure is useful for a semiconductor device such as a diode, a transistor,... | 12/19/1995 |
| 5444017 | Method of making cBN semiconductor device having an ohmic electrode An ohmic electrode is formed on a cBN crystal to form a cBN semiconductor device which is used as a solid electronic element. The cBN semiconductor device may be of an n-type, a p-type or a pn junction type wherein molybdenum is deposited onto an n-type d... | 08/22/1995 |
| 5326424 | Cubic boron nitride phosphide films Thin films of single crystal, cubic boron nitride phosphide are provided on, and in crystallographic registry with, an underlying silicon substrate which is oriented along a single crystallographic axis. The cubic boron nitride phosphide films are deposit... | 07/05/1994 |
| 5298461 | Method of forming ohmic contact electrodes for n-type semiconductor cubic boron nitride An ohmic contact electrode is formed on an n-type semiconductor cubic boron nitride by using a IVB metal; an alloy with a IVB metal; a metal with Si or S; an alloy with Si or S; a metal with B, Al, Ga, or In; an alloy with B, Al, Ga, or In; a VB metal; or... | 03/29/1994 |
| 5227318 | Method of making a cubic boron nitride bipolar transistor A bipolar transistor is formed from epitaxial cubic boron nitride grown on a silicon substrate which is a three to two commensurate layer deposited by pulsed laser evaporation techniques. The thin film, cubic boron nitride bipolar transistor is in epitaxi... | 07/13/1993 |
| 5225367 | Method for manufacturing an electronic device A method of manufacturing an electronic device using boron nitrides comprises the steps of adding impurities in boron nitrides by ion implantation to form a doped region and directing a laser beam onto the doped region while the boron nitrides are placed ... | 07/06/1993 |
| 5196366 | Method of manufacturing electric devices A method of manufacturing electric devices is described. Discrete single crystals are formed on a substrate to be coated. The formation of these crystals is carried out by forming discrete crystallization centers in the surface of the substrate and growin... | 03/23/1993 |
| 5145741 | Converting ceramic materials to electrical conductors and semiconductors In a preferred embodiment room temperature electrically conductive or semiconductive ceramic paths or areas are produced on carbide and nitride ceramic substrates by a process of controlled oxidation using localized thermal heating (e.g., laser heating) b... | 09/08/1992 |
| 5139970 | Electric device and manufacturing method of the same An electric device comprises a crystalline film deposited on a substrate and an electrode formed on the film. The crystalline film consists of a number of colomnar crystals grown at right angles from the surface of the substrate. There are many grain boun... | 08/18/1992 |
| 5081053 | Method for forming a transistor having cubic boron nitride layer A method for forming a transistor which may be suitable for high temperature application is provided. A single crystal silicon substrate has an overlaying layer of epitaxially grown cubic boron nitride in crystallographic registry with the silicon substra... | 01/14/1992 |
| 5057454 | Process for producing ohmic electrode for p-type cubic system boron nitride A process for producing an ohmic electrode for p-type cBN is disclosed, which process comprises the steps of: providing a thin alloy film composed of Au and Be, the weight ratio of Be being from 0.1 to 15% by weight, on p-type cBN; providing a thin film o... | 10/15/1991 |
| 5011790 | Method of manufacturing cubic boron nitride p-n junction body In a method of manufacturing a cubic boron nitride p-n junction body, cBN seed crystals (1) of a first conductivity type are made coexist with original BN (3) and a solvent (2) containing a doping material of a second conductivity type, to grow cBN of the... | 04/30/1991 |
