Bizarre Patents
Crispy Chip Sandwich and Process of Producing a Sandwich Product
A food product comprising a multilayer cookie or snack having outer layers formed from a crispy type edible food product such as a potato chip or corn chip, etc. with an intermediate marshmallow layer being in contact with the inner surface of each crispy chip and one or more filler substances.
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| Number | Title | Issue Date |
| 8431430 | Method for forming a compound semi-conductor thin-film A method is provided for fabricating a thin film semiconductor device. The method includes providing a plurality of raw semiconductor materials. The raw semiconductor materials undergo a pre-reacting process to form a homogeneous compound semiconductor target materi... | 04/30/2013 |
| 8404512 | Crystallization methods for preparing group IBIIIAVIA thin film solar absorbers The present invention provides methods for forming a doped Group IBIIIAVIA absorber layer for a solar cell. The method includes forming precursor layers that include a dopant rich layer and then annealing the precursor layers. The annealing process results in dopant... | 03/26/2013 |
| 8404513 | Solar cell A method for generating electric power including the steps of: (a) preparing a solar cell having a condensing lens and a solar cell element, wherein the solar cell element includes an n-type GaAs layer, a p-type GaAs layer, a quantum tunneling layer, an n-type InGaP... | 03/26/2013 |
| 8329501 | High-throughput printing of semiconductor precursor layer from inter-metallic microflake particles Methods and devices are provided for high-throughput printing of semiconductor precursor layer from microflake particles. In one embodiment, the method comprises of transforming non-planar or planar precursor materials in an appropriate vehicle under the appropriate... | 12/11/2012 |
| 8293566 | Strained layer superlattice focal plane array having a planar structure An infrared focal plane array (FPA) is disclosed which utilizes a strained-layer superlattice (SLS) formed of alternating layers of InAs and InxGa1-xSb with 0≦x≦0.5 epitaxially grown on a GaSb substrate. The FPA avoids the use of a mesa str... | 10/23/2012 |
| 8278133 | Method for joining a film onto a substrate A method for joining a film onto a substrate comprises: a step (A) of floating the film on an interface between an aqueous liquid and a water-insoluble liquid; a step (B) of immersing the substrate into the aqueous liquid; a step (C) of stacking the substrate onto s... | 10/02/2012 |
| 8252621 | Method for forming copper indium gallium chalcogenide layer with optimized gallium content at its surface A method of forming a Group IBIIIAVIA solar cell absorber, which includes a top surface region of less than or equal to 300 nm depth. The Ga/(Ga+In) molar ratio within the top surface region is in the range of 0.1-0.3. The Group IBIIIAVIA solar cell absorber is form... | 08/28/2012 |
| 8227291 | Method of manufacturing stacked-layered thin film solar cell with a light-absorbing layer having band gradient A method of manufacturing a stacked-layered thin film solar cell with a light-absorbing layer having a band gradient is provided. The stacked-layered thin film solar cell includes a substrate, a back electrode layer, a light-absorbing layer, a buffer layer, a window... | 07/24/2012 |
| 8093095 | Semiconductor device with a bulk single crystal on a substrate Device and method of forming a device in which a substrate (10) is fabricated with at least part of an electronic circuit for processing signals. A bulk single crystal material (14) is formed on the substrate, either directly on the substrate (10 | 01/10/2012 |
| 8034654 | Method for forming a GexSi1-x buffer layer of solar-energy battery on a silicon wafer The method is disclosed that Si+ is implanted on Si substrate to enhance strain relaxation at the interface between the metamorphic GexSi1−x buffer layers and Si substrate, in order to facilitate the growth of a high quality Ge on ... | 10/11/2011 |
| 7972892 | Light emitting device and method of fabricating the same A composite growth-assisting substrate 10 is formed by epitaxially growing a separation-assisting compound semiconductor layer 10k composed of a non-GaAs III-V compound semiconductor single crystal, and then a sub-substrate 10e com... | 07/05/2011 |
| 7964436 | Co-sputter deposition of metal-doped chalcogenides The present invention is related to methods and apparatus that allow a chalcogenide glass such as germanium selenide (GexSe1-x) to be doped with a metal such as silver, copper, or zinc without utilizing an ultraviolet (UV) photodoping step to d... | 06/21/2011 |
| 7955890 | Methods for forming an amorphous silicon film in display devices Embodiments of the present invention relate to methods for depositing an amorphous film that may be suitable for using in a NIP photodiode in display applications. In one embodiment, the method includes providing a substrate into a deposition chamber, supplying a ga... | 06/07/2011 |
| 7943415 | Methods of sputtering cadmium sulfide layers for use in cadmium telluride based thin film photovoltaic devices Methods are generally provided of sputtering a cadmium sulfide layer on a substrate. The cadmium sulfide layer can be sputtered on a substrate from a target in a sputtering atmosphere, wherein the target comprises about 75% to about 100% by weight cadmium, and where... | 05/17/2011 |
| 7855096 | Method for manufacturing semiconductor device A semiconductor film is formed on a GaAs substrate (semiconductor substrate). An SiO2 film (insulating film) is formed on the semiconductor film, and the SiO2 film is patterned. The semiconductor film is etched using the SiO2 film as... | 12/21/2010 |
| 7842534 | Method for forming a compound semi-conductor thin-film A method is provided for fabricating a thin film semiconductor device. The method includes providing a plurality of raw semiconductor materials. The raw semiconductor materials undergo a pre-reacting process to form a homogeneous compound semiconductor target materi... | 11/30/2010 |
| 7682865 | Superlattice photodiodes with polyimide surface passivation The subject invention comprises the realization of a superlattice photodiode with polyimide surface passivation. Effective surface passivation of type-II InAs/GaSb superlattice photodiodes with cutoff wavelengths in the long-wavelength infrared is presented. A stabl... | 03/23/2010 |
| 7544535 | Method for manufacturing semiconductor laser element The method for manufacturing a semiconductor laser element according to the present invention has the steps of: forming a semiconductor laminated structure having an active layer composed of a semiconductor material containing Al; etching the semiconductor laminated... | 06/09/2009 |
| 7422927 | Methods of forming a resistance variable element The invention includes methods of depositing silver onto a metal selenide-comprising surface, and methods of forming a resistance variable device. In one implementation, a method of depositing silver onto a metal selenide-comprising surface includes providing a depo... | 09/09/2008 |
| 7416909 | Methods for preserving strained semiconductor substrate layers during CMOS processing Oxidation methods, which avoid consuming undesirably large amounts of surface material in Si/SiGe heterostructure-based wafers, replace various intermediate CMOS thermal oxidation steps. First, by using oxide deposition methods, arbitrarily thick oxides may be forme... | 08/26/2008 |
| 7368309 | Nitride semiconductor and fabrication method thereof The present invention relates to nitride semiconductor, and more particularly, to GaN-based nitride semiconductor and fabrication method thereof. The nitride semiconductor according to the present invention comprises a substrate; a GaN-based buffer layer formed in a... | 05/06/2008 |
| 7368067 | P-type zinc oxide semiconductor film and process for preparation thereof A p-type ZnO semiconductor film comprised mainly of Zn and O elements is disclosed. The film is characterized as containing an alkali metal and nitrogen. Preferably, the alkali metal is contained such that its concentration is distributed to increase toward an end o... | 05/06/2008 |
| 7368757 | Compound semiconductor and compound semiconductor device using the same A back electrode 6 is formed in the back of a Si single crystal substrate 2 of a compound semiconductor in which an n-type 3C-SiC single crystal buffer layer 3 having a thickness of 0.05-2 μm, a carrier concentration of 1016-102... | 05/06/2008 |
| 7358112 | Method of growing a semiconductor layer A method of growing a p-type nitride semiconductor material having magnesium as a p-type dopant by molecular beam epitaxy (MBE), comprises supplying ammonia gas, gallium and magnesium to an MBE growth chamber containing a substrate so as to grow a p-type nitride sem... | 04/15/2008 |
| 7326908 | Optically-regulated optical emission using colloidal quantum dot nanocrystals The present invention relates to the emission of light which occurs in proportion with an electrical signal, an optical signal, or the combination of both. The emission of light may occur due to the passage of current through a light-emitting polymer, or due to ener... | 02/05/2008 |
| 7317202 | Method for manufacture of an epitaxial structural element layer sequence and optoelectronic semiconductor chip A technique for fabricating an epitaxial component layer sequence based on a first III/V compound semiconductor material system with a first group V element on a substrate or a buffer layer, which comprises a material based on a second III/V compound semiconductor m... | 01/08/2008 |
| 7294200 | Method for producing nitride semiconductor crystal, and nitride semiconductor wafer and nitride semiconductor device A method for producing a nitride semiconductor crystal comprising steps (a), (b) and (c), which steps follow in sequence as follows: a step (a) for forming fine crystal particles made of a nitride semiconductor on a substrate; a step (b) for forming a nitride semico... | 11/13/2007 |
| 7253355 | Method for constructing a layer structure on a substrate The invention relates to a method for constructing a layer structure on an especially fragile flat substrate. In order for thin, fragile flat substrates to be able to be subjected to refinement or construction of semiconductor components, a process is proposed with ... | 08/07/2007 |
| 7238545 | Method for fabricating tandem thin film photoelectric converter A method of manufacturing a tandem-type thin film photoelectric conversion device includes the steps of forming at least one photoelectric conversion unit (3) on a substrate (1) in a deposition apparatus, taking out the substrate (1) having the ... | 07/03/2007 |
| 7223620 | Process for the production of light-emitting diode light sources with a luminescence conversion element A plurality of light-emitting diode light sources of the same kind are produced simultaneously. Each light source includes a light-emitting diode chip and a luminescence conversion element, which converts the wavelength of at least part of an electromagnetic radiati... | 05/29/2007 |
| 7211462 | Process for large-scale production of CdTe/CdS thin film solar cells A process for large-scale production of CdTe/CdS thin film solar cells, films of the cells being deposited, in sequence, on a transparent substrate, the sequence comprising the steps of: depositing a film of a transparent conductive oxide (TCO) on the substrate; dep... | 05/01/2007 |
| 7202104 | Co-sputter deposition of metal-doped chalcogenides The present invention is related to methods and apparatus that allow a chalcogenide glass such as germanium selenide (GexSe1-x) to be doped with a metal such as silver, copper, or zinc without utilizing an ultraviolet (UV) photodoping step to d... | 04/10/2007 |
| 7192850 | Method for doping quantum dots A doping method for forming quantum dots is disclosed, which includes following steps: providing a first precursor solution for a group II element and a second precursor solution for a group VI element; heating and mixing the first precursor solution and the second ... | 03/20/2007 |
| 7189588 | Group III nitride semiconductor substrate and its manufacturing method The present invention provides a group III nitride semiconductor substrate with low defect density as well as small warp and a process for producing the same; for instance, the process according to the present invention comprises the following series of steps of: fo... | 03/13/2007 |
| 7179667 | Semiconductor base material and method of manufacturing the material As shown in FIG. 1(a), substrate 1 having a growth plane having a concavo-convex surface is used. When GaN group crystal is vapor phase grown using this substrate, the concavo-convex shape suppresses growth in the lateral direction and promotes ... | 02/20/2007 |
| 7179677 | ZnO/Cu(InGa)Sesolar cells prepared by vapor phase Zn doping A process for making a thin film ZnO/Cu(InGa)Se2 solar cell without depositing a buffer layer and by Zn doping from a vapor phase, comprising: depositing Cu(InGa)Se2 layer on a metal back contact deposited on a glass substrate; heating the Cu(I... | 02/20/2007 |
| 7176479 | Nitride compound semiconductor element A nitride compound semiconductor element having improved characteristics, productivity and yield. A nitride compound semiconductor element includes: a sapphire substrate; a first single crystalline layer of AlN formed on said sapphire substrate; a second single crys... | 02/13/2007 |
| 7170147 | Dissipative isolation frames for active microelectronic devices, and methods of making such dissipative isolation frames Microelectronic apparatus having protection against high frequency crosstalk radiation, comprising: a planar insulating substrate; an active semiconductor electronic device located over a first region of the insulating substrate; and a doped semiconductor located in... | 01/30/2007 |
| 7170126 | Structure of vertical strained silicon devices A trench capacitor vertical-transistor DRAM cell in a SiGe wafer compensates for overhang of the pad nitride by forming an epitaxial strained silicon layer on the trench walls that improves transistor mobility, removes voids from the poly trench fill and reduces res... | 01/30/2007 |
| 7157300 | Fabrication of thin film germanium infrared sensor by bonding to silicon wafer A method of fabricating a thin film germanium photodetector includes preparing a silicon substrate; fabricating a CMOS device on the silicon substrate; preparing a germanium substrate; preparing surfaces of each substrate for bonding; bonding the germanium substrate... | 01/02/2007 |
