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Patent No. 5823572

Self Defense Weapon With Memo

A self defense weapon formed as a memo pad and which is easily held by a person's fingers, therefore making it possible to provide protection from a mugger and also to quickly and easily write a record or a message without failure of missing or forgetting significant information under a stressful situation.

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Class 438/929 - EUTECTIC SEMICONDUCTOR


Subclass of Class 438 - Semiconductor device manufacturing: process
Definition: Art collection directed to semiconductor manufacture involving
No. of patents: 17
Last issue date: 02/28/2006


NumberTitleIssue Date
7005378Processes for fabricating conductive patterns using nanolithography as a patterning tool
Nanolithographic deposition of metallic nanostructures using coated tips for use in microelectronics, catalysis, and diagnostics. AFM tips can be coated with metallic precursors and the precursors patterned on substrates. The patterned precursors can be converted to...
02/28/2006
6090651Depletion free polysilicon gate electrodes
A method of forming a supersaturated layer on a semiconductor device, where an initial phase layer is deposited on the semiconductor device. The initial phase layer has a solid phase dopant saturation level and a liquid phase dopant saturation level, wher...
07/18/2000
5365054Optical detector having a plurality of matrix layers with cobalt disilicide particles embedded therein
Silicon and metal are coevaporated onto a silicon substrate in a molecular beam epitaxy system with a larger than stoichiometric amount of silicon so as to epitaxially grow particles of metal silicide embedded in a matrix of single crystal epitaxially gro...
11/15/1994
5211707Semiconductor metal composite field emission cathodes
A field emission cathode having a parallel array of individual electrically conductive rods of metal silicide or germanide in a silicon-based or germanium-based single crystal matrix. Each rod has an emission end exposed at one major surface of the cathod...
05/18/1993
5098862Method of making ohmic electrical contact to a matrix of semiconductor material
Electrical ohmic contacts are made to a matrix of silicon having conductive rods embedded therein without making contact to any of the rods. Those rods which extend to the surface in the selected area of the matrix to be contacted are etched to form holes...
03/24/1992
4755256Method of producing small conductive members on a substrate
Method of forming alternating narrow strips of conductive metal silicide, specifically cobalt disilicide, and silicon on a substrate as of silicon with a silicon dioxide or silicon nitride surface layer. Cobalt and silicon are deposited on the substrate i...
07/05/1988
4724223Method of making electrical contacts
Electrical contacts are made to conductive elements of an array which are embedded in a matrix of silicon with the conductive elements exposed at a surface. The surface is covered with silicon oxide, and an opening is made in the silicon oxide to expose a...
02/09/1988
4690714Method of making active solid state devices
A method of making an integrated electrooptic solid state device array comprising forming a structure having a multiplicity of active, solid state electrooptic component bodies in a solid state device material, including arranging the component bodies in ...
09/01/1987
4585493Grain-driven zone-melting of silicon films on insulating substrates
A method of growing single crystal layers from polycrystal layers is taught. The method involves forming a eutectic of the polycrystal material and an alloying metal and forming a eutectic bridge between a seed single crystal and the polycrystalline mater...
04/29/1986
4534820Method for manufacturing crystalline film
A thin film of a metal of which eutectic or compound is produced together with a semiconductor which is to be grown in its crystalline form is deposited on an amorphous (quartz glass) substrate. The thin film is patterned with a periodic pattern of a poly...
08/13/1985
4472728Imaging X-ray spectrometer
An X-ray spectrometer for providing imaging and energy resolution of an X-ray source comprised of a thick silicon wafer (10) having an embedded matrix or grid of aluminum completely through the wafer fabricated, for example, by thermal migration. The alum...
09/18/1984
4371406Solid-state device
The ultra-miniaturized, active solid-state devices and circuitries have unique material bodies having signal-translating regions attached thereto for active signal translation. These regions, comprising melt-grown, or simulated melt-grown, metallurgical c...
02/01/1983
4224594Deep diode magnetoresistor
A semiconductor magnetoresistor device embodies a plurality of spaced highly conductive planar metallic-like electrodes formed in situ by thermal gradient zone melting to maximize the increase in the current path in a magnetic field established in the dev...
09/23/1980
4136435Method for making solid-state device
The ultra-miniaturized, active solid-state devices and circuitries have unique material bodies having signal-translating regions attached thereto for active signal translation. These regions, comprising melt-grown, or simulated melt-grown, metallurgical c...
01/30/1979
4116717Ion implanted eutectic gallium arsenide solar cell
An improved gallium arsenide solar cell is provided by ion implanting both the top and bottom of a plural vertical PN junction eutectic gallium arsenide cell body to obtain an electrical drift field, with multiple ion implants progressively larger in dose...
09/26/1978
4070205Aluminum arsenide eutectic gallium arsenide solar cell
An improved gallium arsenide solar cell is provided by forming a P+ layer on top of a wafer of plural vertical PN junction eutectic gallium arsenide crystal by liquid phase epitaxial growth of P doped GaAs followed by liquid phase epitaxial growth at Al
01/24/1978
4012235Solid phase epitaxial growth
A solid phase epitaxially grown semi-conductor is described wherein a thin film of a semi-conductor material together with a thin film dopant are transported through a metal film onto a substrate, using a temperature below the eutectic temperature for the...
03/15/1977
 
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