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| Number | Title | Issue Date |
| 6905963 | Fabrication of B-doped silicon film by LPCVD method using BCI3 and SiH4 gases A semiconductor device fabricating method for forming a boron doped silicon film includes the step of forming the boron doped silicon film on a substrate at an inner temperature of the reaction furnace ranging from about 460 to 600° C. or at an average velocity of ... | 06/14/2005 |
| 6660615 | Method and apparatus for growing layer on one surface of wafer A method and an apparatus for growing a layer on one surface of a wafer by liquid phase deposition are provided. At first, a first wafer is putted on a first wafer-holder by its first surface. Then, a growth-liquid vessel having a first opening at the bot... | 12/09/2003 |
| 6180470 | FETs having lightly doped drain regions that are shaped with counter and noncounter dorant elements Lifetime of a short-channel NMOS device is increased by modifying distributions of electrically active LDD dopant at boundaries of the device's LDD regions. The LDD dopant distributions are modified by implanting counter-dopants at the boundaries of the L... | 01/30/2001 |
| 6096617 | Method of manufacturing a carbon-doped compound semiconductor layer A compound semiconductor device is manufactured by forming a carbon-doped compound semiconductor device at a predetermined growth temperature on a compound semiconductor substrate, stopping the growth and changing the growth temperature of the compound se... | 08/01/2000 |
| 6078845 | Apparatus for carrying semiconductor devices This invention pertains to the embedding of a information storage device within, or attached to, the carriers used to transport work in progress from step to step in the semiconductor manufacturing process. The carrier can be a tray having sites for sever... | 06/20/2000 |
| 6036772 | Method for making semiconductor device A method for making a semiconductor device comprises: depositing at least one Group II-VI compound semiconductor layer comprising at least one Group II element selected from the group consisting of zinc, magnesium, manganese, beryllium, cadmium and mercur... | 03/14/2000 |
| 5937273 | Fabricating compound semiconductor by varying ratio of stagnant layer thickness and mean free path of seed material A fabricating method of compound semiconductor device is proposed which has a step of varying selective growth ratio of crystal by changing either a mean free path of material gas in gas atmosphere for use in crystal growth or a thickness of a stagnant la... | 08/10/1999 |
| 5789030 | Method for depositing doped amorphous or polycrystalline silicon on a substrate A method for forming an in-situ doped amorphous or polycrystalline silicon thin film on a substrate is provided. The method includes placing the substrate in a reaction chamber of a CVD reactor and introducing a silicon gas species into the reaction chamb... | 08/04/1998 |
| 5756374 | Compound semiconductor light emitting device and method of preparing the same A compound semiconductor light emitting device of high performance and a method which can industrially prepare the same are provided. The compound semiconductor light emitting device includes a GaAs substrate, a buffer layer consisting of GaN, having a th... | 05/26/1998 |
| 5709745 | Compound semi-conductors and controlled doping thereof A method of controlling the amount of impurity incorporation in a crystal grown by a chemical vapor deposition process. Conducted in a growth chamber, the method includes the controlling of the concentration of the crystal growing components in the growth... | 01/20/1998 |
| 5656540 | Semiconductor crystal growing method On a surface of a p-type GaAs (111)B substrate 11, a mesa groove is formed along a [211]A direction. TDMAAs as a group V material and TMGa as a group III material are supplied at 8×10-3 Pa and 8×10-4 Pa, respectively, to grow n-typ... | 08/12/1997 |
| 5656076 | Method for growing III-V group compound semiconductor crystal In a method for growing a III-V group compound semiconductor crystal, as a Si dopant, a compound including a Si atom bonded to an alkyl group and a hydrogen atom is used. Also, a compound including two Si atoms in one molecule thereof, at least one of sai... | 08/12/1997 |
| 5654230 | Method of forming doped film A doped film forming method comprising, the steps of preparing gas source for supplying a film forming gas into the process tube, gas source for supplying doping gases, in which a dope is included, into the process tube, a dry pump for exhausting the proc... | 08/05/1997 |
| 5597761 | Semiconductor light emitting device and methods of manufacturing it An epitaxial layer(s) of compound semiconductor alloy doped with nitrogen and represented by the formula (Alx Ga1-x)y In1-y P (0 | 01/28/1997 |
| 5597740 | Semiconductor display device and a method of fabricating the same A light emitting device and a method of fabricating the same in which a first cladding layer is formed on a substrate, then red, green and blue light emitting portions each made of II-VI semiconductor are formed in a horizontal direction with respect to a... | 01/28/1997 |
| 5585306 | Methods for producing compound semiconductor devices In a method for producing a compound semiconductor device such as laser devices, FET and HEMT, a crystal layer is formed with materials belonging to at least two (first and second) different groups of the periodic law table under a crystal growth conditio... | 12/17/1996 |
| 5580818 | Fabrication process for semiconductor optical device A SiO2 mask is formed on an n-type InP substrate. The mask gap width is narrower in a region I (laser region) and wider in a region II (modulator region). With taking the mask as growth blocking masks, an optical guide layer of InGaAsP, an MQW ... | 12/03/1996 |
| 5573976 | Method of fabricating semiconductor laser A method of fabricating a semiconductor laser includes forming an active layer including a compound semiconductor material on a semiconductor substrate, the compound semiconductor material having an energy band gap that monotonically increases as the grow... | 11/12/1996 |
| 5499599 | Method for continuous control of composition and doping of pulsed laser deposited films by pressure control A method for growing a deposit upon a substrate of semiconductor material involves the utilization of pulsed laser deposition techniques within a low-pressure gas environment. The substrate and a target of a first material are positioned within a depositi... | 03/19/1996 |
| 5498568 | Method of producing a compound semiconductor crystal layer with a steep heterointerface After a GaAs substrate is set in a reaction container, the pressure in the reaction container is reduced to 10-100 torr and arsine is supplied into the container. A GaAs buffer layer is formed on the GaAs substrate by introducing TMG when the surface temp... | 03/12/1996 |
| 5463978 | Compound semiconductor and controlled doping thereof A method of controlling the amount of impurity incorporation in a crystal grown by a chemical vapor deposition process. Conducted in a growth chamber, the method includes the controlling of the concentration of the crystal growing components in the growth... | 11/07/1995 |
| 5458085 | Magnesium-doping in III-V compound semiconductor A method of manufacturing a semiconductor device having a step of growing a plurality of electrically connected p-type group III-V compound semiconductor layers by organo-metallic vapor phase epitaxy. In growing the plurality of p-type group III-V compoun... | 10/17/1995 |
| 5415128 | Rotation induced superlattice This invention describes a multi-deposition system, whereby directing elemental or molecular source fluxes across a substrate in an asymmetrical manner and rotating the substrate at low rotation speeds, a superlattice is formed having a composition of ... | 05/16/1995 |
| 5387544 | Method of making a semiconductor device including carbon as a dopant While producing a III-V compound semiconductor layer, carbon is added to group III and V elements to control the p type conductivity of the semiconductor layer, forming a p type region. Then, a small amount of n type dopant is added to the group III and V... | 02/07/1995 |
| 5372658 | Disordered crystalline semiconductor A semiconductor material having a disordered structure consists of a semiconductor material on which epitaxial growth is possible. The semiconductor material has an energy band structure constituted by one of the indirect band structure, the direct band s... | 12/13/1994 |
| 5332689 | Method for depositing low bulk resistivity doped films An LPCVD deposition process for depositing doped thin films on a substrate is provided. The process may be performed in a LPCVD reaction chamber at elevated temperatures and reduced pressures. The process is especially suited to the deposition and doping ... | 07/26/1994 |
| 5322808 | Method of fabricating inverted modulation-doped heterostructure A donor layer (17) including an undoped wide bandgap material (14) and an n-type dopant (16) is deposited on a substrate (12) by molecular beam epitaxy (MBE) at a first temperature which is high enough for optimal growth of the donor layer (17). The dopan... | 06/21/1994 |
| 5316958 | Method of dopant enhancement in an epitaxial silicon layer by using germanium An in-situ doped n-type silicon layer is provided by a low temperature, low pressure chemical vapor deposition process employing a germanium-containing gas in combination with the n-type dopant containing gas to thereby enhance the in-situ incorporation o... | 05/31/1994 |
| 5298108 | Serpentine superlattice methods and devices The disclosed invention provides a serpentine-shaped semiconductor superlattice for novel electric and electro-optic devices. The invention comprises a stepped, or vicinal substrate, having a plurality of layers deposited on the steps in succession. Each ... | 03/29/1994 |
| 5298452 | Method and apparatus for low temperature, low pressure chemical vapor deposition of epitaxial silicon layers A method and apparatus for depositing single crystal, epitaxial films of silicon on a plurality of substrates in a hot wall, isothermal deposition system is described. The deposition temperatures are less than about 800° C., and the operating pressures d... | 03/29/1994 |
| 5294286 | Process for forming a thin film of silicon The thickness of a thin film of an element semiconductor may be determined by counting the number of cycles of gaseous component introductions within a crystal growth vessel. Each cycle permits at most one monolayer of growth since the pressure in the ves... | 03/15/1994 |
| 5284782 | Process for formation of delta-doped quantum well field effect transistor A process for formation of a delta-doped quantum well field effect transistor is disclosed, and the transistor includes: a substrate, a super lattice, a buffer layer, quantum wells, a cap layer, and an ohmic layer. Then a drain, a source and a gate are fo... | 02/08/1994 |
| 5281551 | Method for delta-doping in GaAs epitaxial layer grown on silicon substrate by metalorganic chemical vapor deposition The technique of the delta-doping by metalorganic chemical vapor deposition (MOCVD) in GaAs epitaxial layer at 700°-750° C. after deposition of GaAs heteroepitaxial buffer layer exceeding 3 μm thickness on silicon substrate.... | 01/25/1994 |
| 5275966 | Low temperature process for producing antimony-containing semiconductor materials Tri-isopropylantimony is used as a source of antimony in chemical vapor deposition production of semiconductor materials. The process can be used to introduce antimony as a dopant into III/V and II/VI semiconductor materials.... | 01/04/1994 |
| 5273933 | Vapor phase growth method of forming film in process of manufacturing semiconductor device In a process of manufacturing a short-wavelength-light emitting element, n- and p-type GaInAlN films are formed on a substrate made of SiC, using an MOCVD method. (CH3)3 SiN3 is used as raw material for nitrogen. The films... | 12/28/1993 |
| 5273931 | Method of growing epitaxial layers of N-doped II-VI semiconductor compounds Epitaxial layers of N-doped II-VI semiconductor compounds are grown on GaAs substrates by MOCVD using FME. Separating the growth and doping by alternating introduction of (1) the semiconductor cation and anion and (2) the cation and the dopant increases t... | 12/28/1993 |
| 5266127 | Epitaxial process for III-V compound semiconductor A vapor-phase epitaxial process enabling easy growth of a III-V compound semiconductor layer including a δ-doped layer requires essentially no change or rearrangement of the conventional vapor-phase epitaxial reactor system but only a simple change in th... | 11/30/1993 |
| 5248631 | Doping of IIB-VIA semiconductors during molecular beam epitaxy using neutral free radicals A method and apparatus for enhanced doping of IIB-VIA semiconductors through the use of a free-radical source is described. The process involves the simultaneous production of beams of free-radicals together with group IIB molecules or atoms and group VIA... | 09/28/1993 |
| 5244829 | Organometallic vapor-phase epitaxy process using (CH3)3 As and CCl4 for improving stability of carbon-doped GaAs The use of trimethylarsine in place of tertiary butyl arsine for low pressure organometallic vapor phase epitaxy of GaAs:C to enhance the carbon doping efficiency of CCl4. The hole concentration is three times higher with trimethylarsine then w... | 09/14/1993 |
| 5225378 | Method of forming a phosphorus doped silicon film Phosphor-doped silicon films are simultaneously formed on semiconductor wafers, respectively. The semiconductor wafers are contained in a reaction tube whose interior temperature is controlled to 500° C. Si2 H6 and PH3 ar... | 07/06/1993 |
