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| Number | Title | Issue Date |
| 6809016 | Diffusion stop implants to suppress as punch-through in SiGe Diffusion of As in SiGe of MOS transistors based on Si/SiGe is prevented by ion implanting boron. Embodiments include forming As source/drain extension implants in a strained Si/SiGe substrate, ion implanting boron at between the As source/drain extension implant ju... | 10/26/2004 |
| 6228701 | Apparatus and method for minimizing diffusion in stacked capacitors formed on silicon plugs Methods and apparatus for fabricating stacked capacitor structures, which include barrier layers, are disclosed. According to one aspect of the present invention, a method for reducing outdiffusion within an integrated circuit includes forming a gate oxid... | 05/08/2001 |
| 5923075 | Definition of anti-fuse cell for programmable gate array application A method for fabricating an anti-fuse cell using an undoped polysilicon film as a mask in defining the anti-fuse window is described. A layer of silicon oxide is provided over the surface of a semiconductor substrate. A first undoped polysilicon layer is ... | 07/13/1999 |
| 5639689 | Method for fabricating storage electrode of semiconductor device A method for fabricating a storage electrode of a semiconductor device, capable of forming the storage electrode to have a rough surface with hemispherical lugs by use of simplified deposition process and heat treatment using a single process tube to obta... | 06/17/1997 |
| 5622892 | Method of making a self cooling electrically programmable fuse A method of fabricating an electrically programmable fuse buried under quartz and layers of polyimide with a specific structure to enhance its "thermal" capabilities. The fuse is designed to "blow" and cool off quickly so as not to cause damage to areas a... | 04/22/1997 |
| 5571747 | Method for producing a semiconductor commutator A semiconductor commutator which is constructed by joining a semiconductor region of the first conductivity type and a semiconductor region of the second conductivity type, wherein there is provided a grain boundary which is located near a junction surfac... | 11/05/1996 |
| 5529954 | Method of diffusing a metal through a silver electrode to form a protective film on the surface of the electrode A semiconductor device includes a first metal film formed on a semiconductor substrate, a second metal film formed on the first metal film and containing silver as a main component, and a protective film containing a metal element of the first metal film ... | 06/25/1996 |
| 5037766 | Method of fabricating a thin film polysilicon thin film transistor or resistor A method of fabricating a double layered polisilicon film with oxygen diffusion for scaled down polysilicon thin film transistor/resistor. The double layered polysilicon film structure includes: a first heavily doped polysilicon layer, produced by Low Pre... | 08/06/1991 |
| 4366338 | Compensating semiconductor materials A method of compensating grain boundaries or dislocations causing interstices to form particularly in polycrystalline semiconductor materials is disclosed which comprises selectively diffusing opposite impurity-type donor semiconductor material into the i... | 12/28/1982 |
| 4230508 | Method of making semicrystalline silicon article A semicrystalline silicon solar energy cell formed from individual grains of silicon having portions thereof at the light-receiving surface of the cell. An electrical junction is formed at said light-receiving surface and extends across and below that sur... | 10/28/1980 |
| 4194212 | Semicrystalline silicon article and method of making same A semicrystalline silicon solar energy cell formed from individual grains of silicon having portions thereof at the light-receiving surface of the cell. An electrical junction is formed at said light-receiving surface and extends across and below that sur... | 03/18/1980 |
| 4171997 | Method of producing polycrystalline silicon components, particularly solar elements A method of producing semiconductor components, particularly solar elements, in which a P- or N-semiconductor chip is subjected to an oxidation step prior to formation of the device PN junction, such that the external surface and internal grain boundaries... | 10/23/1979 |
| 4155785 | Process of making a radiation responsive device The practice of this disclosure obtains a relatively high efficiency operation for a crystalline semiconductor solar cell containing various defects of the linear and planar types. Linear defects include screw dislocations as well as full and partial disl... | 05/22/1979 |
| 4082889 | Luminescent material, luminescent thin film therefrom, and optical display device therewith This disclosure provides a polycrystalline semiconductor material which has a high luminous efficiency because of an especial profile of impurity concentration within each grain thereof. The regions immediately adjacent to the grain surfaces or grain boun... | 04/04/1978 |
| 4062038 | Radiation responsive device The practice of this disclosure obtains a relatively high efficiency operation for a crystalline semiconductor solar cell containing various defects of the linear and planar types. Linear defects include screw dislocations as well as full and partial disl... | 12/06/1977 |
