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Class 438/921 - Nonselective diffusion


Subclass of Class 438 - Semiconductor device manufacturing: process
Definition: Art collection under 914 involving a random diffusion process
No. of patents: 5
Last issue date: 11/05/1996


NumberTitleIssue Date
5571747Method for producing a semiconductor commutator
A semiconductor commutator which is constructed by joining a semiconductor region of the first conductivity type and a semiconductor region of the second conductivity type, wherein there is provided a grain boundary which is located near a junction surfac...
11/05/1996
5569611Method of manufacturing a bipolar transistor operating at low temperature
In a method of manufacturing a bipolar transistor, an oxide film pattern is formed on an epitaxial collector layer of a first conductive type which is formed on a buried layer of the first conductive type. A selectively-ion-implanted-collector (SIC) regio...
10/29/1996
4843034Fabrication of interlayer conductive paths in integrated circuits
A method of producing interlayer conductive paths having substantially planar top surfaces in a multilayer integrated circuit structure, comprising the steps of forming elements of either a conductive or semiconductive material as a lower layer, depositin...
06/27/1989
4168997Method for making integrated circuit transistors with isolation and substrate connected collectors utilizing simultaneous outdiffusion to convert an epitaxial layer
In an integrated circuit structure a subsurface isolation layer is doped by diffusion during wafer processing. A substrate is first doped by ion implantation to create surface layer of the opposite conductivity type. Where substrate connections are to be ...
09/25/1979
4140559Method of fabricating an improved substrate fed logic utilizing graded epitaxial deposition
An integrated circuit having a substrate of a first conductivity type, a first layer of opposite conductivity type thereon and a second layer of said first conductivity type inversely graded on said first layer and including a heavily doped region adjacen...
02/20/1979
 
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