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| Number | Title | Issue Date |
| 7214614 | System for controlling metal formation processes using ion implantation The present invention is generally directed to various methods of using ion implantation techniques to control various metal formation processes. In one illustrative embodiment, the method comprises forming a metal seed layer above a patterned layer of insulating ma... | 05/08/2007 |
| 7186631 | Method for manufacturing a semiconductor device Provided is a method for manufacturing a semiconductor device comprising forming a device isolation layer on a semiconductor substrate; forming gate insulating layers on the upper part of the semiconductor substrate having the device isolation layers formed thereon;... | 03/06/2007 |
| 7041530 | Method of production of nano particle dispersed composite material A method of the production of a nanoparticle dispersed composite material capable of controlling a particle size and a three dimensional arrangement of the nanoparticles is provided. The method of the production of a nanoparticle dispersed composite material of the ... | 05/09/2006 |
| 6960498 | Doping method, doping apparatus, and control system for doping apparatus A doping method capable of controlling a dose amount in response to a change the ratio in ion species during a doping process, a control system for controlling a doping amount, and a doping apparatus having a control system are provided. An ion current value of a sp... | 11/01/2005 |
| 6943116 | Method for fabricating a p-channel field-effect transistor on a semiconductor substrate A p-channel field-effect transistor is formed on a semiconductor substrate. The transistor has an n-doped gate electrode, a buried channel, a p-doped source and a p-doped drain. The transistor is fabricated by a procedure in which, after an implantation for defining... | 09/13/2005 |
| 6936530 | Deposition method for Si-Ge epi layer on different intermediate substrates A method of forming an Si—Ge epitaxial layer comprising the following steps. A structure is provided and a doped Si—Ge seed layer is formed thereover. The doped Si—Ge seed layer having increased nucleation sites. A Si—Ge epitaxial layer upon the doped Si—G... | 08/30/2005 |
| 6927153 | Ion implantation with multiple concentration levels A method that includes providing a semiconductor substrate having a mask on a surface thereof. The mask includes a first region having no masking elements and a second region having a plurality of masking elements. Each of the plurality of masking elements has a dim... | 08/09/2005 |
| 6911376 | Selective heating using flash anneal A process, which includes implanting hydrogen ions into a silicon substrate, overlaying the silicon substrate on to a support substrate, and applying a flash anneal heat treatment to the silicon and support substrates to cause the silicon substrates to separate at a... | 06/28/2005 |
| 6727175 | Method of controlling metal formation processes using ion implantation, and system for performing same The present invention is generally directed to various methods of using ion implantation techniques to control various metal formation processes. In one illustrative embodiment, the method includes forming a metal seed layer above a patterned layer of insulating mat... | 04/27/2004 |
| 6562686 | Method for fabricating semiconductor device A method for fabricating a semiconductor device employing a salicide (self-aligned silicide) structure is disclosed. The method prevents a junction leakage current from being increased at a portion of a source/drain region which is adjacent to an field ox... | 05/13/2003 |
| 6479312 | Gallium phosphide luminescent device By providing a nitrogen-doped low carrier concentration layer 13 having both of a donor concentration and an acceptor concentration controlled below 1×1016 /cm3 at a p-n junction portion between an n-type GaP layer 12 and a p-type G... | 11/12/2002 |
| 6465370 | Low leakage, low capacitance isolation material A method for reducing a capacitance formed on a silicon substrate includes the step of introducing hydrogen atoms into a portion of said surface to increase the dielectric constant of such portion of the surface increasing the effective thickness of the d... | 10/15/2002 |
| 6410348 | Interface texturing for light-emitting device An interface texturing for light-emitting device is formed by utilizing holographic lithography. Two coherent light beams are overlaid to cause constructive and destructive interference and thereby periodical alternative bright and dark lines are formed. ... | 06/25/2002 |
| 6204157 | Method for establishing shallow junction in semiconductor device to minimize junction capacitance A method for making a semiconductor device including a silicon substrate includes implanting Nitrogen into the substrate after gate stack formation and before source/drain pant implantation. The Nitrogen is implanted and then annealed as appropriate to es... | 03/20/2001 |
| 6093648 | Production method for a discrete structure substrate The problem to be solved by the present invention is providing a production method capable of adjusting a dislocation density freely to a required dislocation density level for a discrete structure substrate. According to the present invention, when produ... | 07/25/2000 |
| 6063682 | Ultra-shallow p-type junction having reduced sheet resistance and method for producing shallow junctions A method of fabricating a transistor is provided. According to the method, a heavy ion is implanted into a silicon substrate so as to amorphize at least a portion of the silicon substrate. The amorphized silicon is substantially free of channels. A dopant... | 05/16/2000 |
| 6048782 | Method for doped shallow junction formation using direct gas-phase doping Halides of a dopant species may be used as a dopant gas source to form shallow doped junctions using a direct gas-phase doping (GPD) process. These halides can also be combined with a carrier gas. Some advantages over conventional gas-phase doping process... | 04/11/2000 |
| 6043117 | SRAM cell employing substantially vertically elongated pull-up resistors and methods of making, and resistor constructions and method of making A method of forming an SRAM cell includes, a) providing a pair of pull-down gates having associated transistor diffusion regions operatively adjacent thereto, one of the diffusion regions of each pull-down gate being electrically connected to the other pu... | 03/28/2000 |
| 6043139 | Process for controlling dopant diffusion in a semiconductor layer Diffusion of ion-implanted dopant is controlled by incorporating electrically inactive impurity in a semiconductor layer by at least one crystal growth technique.... | 03/28/2000 |
| 6013332 | Boron doping by decaborane A method of manufacturing a semiconductor device comprising the steps of: ionizing decaborane; and implanting ionized decaborane into a silicon wafer. Solid decaborane can be vaporized in a reduced pressure atmosphere or by heating. A single decaborane mo... | 01/11/2000 |
| 6008124 | Semiconductor device having improved lamination-structure reliability for buried layers, silicide films and metal films, and a method for forming the same After formation of a connection hole or before deposition of an insulator film, a semiconductor device is placed onto a cathode of a plasma generator. A surface of a metal silicide film such as a silicide of titanium is exposed to a plasma of a nitrogen-c... | 12/28/1999 |
| 5885861 | Reduction of dopant diffusion by the co-implantation of impurities into the transistor gate conductor Diffusion of dopants within the gate of the transistor and/or the source/drain regions can be inhibited by the ion co-implantation of impurities in addition to the ion implantation of the n-type or p-type dopants. Implanting a combination of nitrogen and ... | 03/23/1999 |
| 5855962 | Flowable spin-on insulator A spin on insulating coating with ionic barrier properties is formed on a substrate, by mixing a P or B containing material such as phosphazene or borazine with a solution of silsesquioxane, spin coating on a substrate to form a film of pre-determined thi... | 01/05/1999 |
| 5821147 | Integrated circuit fabrication Indium is employed as the shallow portion of a lightly doped drain transistor.... | 10/13/1998 |
| 5780347 | Method of forming polysilicon local interconnects A method and apparatus of forming local interconnects in a MOS process deposits a layer of polysilicon over an entire region after several conventional MOS processing steps. The region is then masked to provide protected regions and unprotected regions. T... | 07/14/1998 |
| 5766695 | Method for reducing surface layer defects in semiconductor materials having a volatile species The number of surface defects in semiconductor materials having a volatile species, particulary group-III nitride-based semiconductor devices, are reduced by first implanting species atoms into the semiconductor sample to fill some of the surface layer sp... | 06/16/1998 |
| 5753039 | Manufacturing method of p-type semiconductor crystal An object formed of a semiconductor is heated to and kept at such a temperature that a semiconductor crystal formed of a II-VI Group compound semiconductor mainly containing Zn and Se can be grown. A molecular beam including elements constituting the II-V... | 05/19/1998 |
| 5656538 | Halide dopant process for producing semi-insulating group III-V regions for semiconductor devices A process for growing semi-insulating layers of indium phosphide and other group III-V materials through the use of halide dopant or etchant introduction during growth. Gas phase epitaxial growth techniques are utilized at low temperatures to produce indi... | 08/12/1997 |
| 5599735 | Method for doped shallow junction formation using direct gas-phase doping Halides of a dopant species may be used as a dopant gas source to form shallow doped junctions using a direct gas-phase doping (GPD) process. These halides can also be combined with a carrier gas. Some advantages over conventional gas-phase doping process... | 02/04/1997 |
| 5585291 | Method for manufacturing a semiconductor device containing a crystallization promoting material A method for manufacturing a semiconductor device having a crystalline silicon semiconductor layer comprises the steps of heat crystallizing an amorphous silicon semiconductor layer at a relatively low temperature because of the use of a crystallization p... | 12/17/1996 |
| 5534079 | Supersaturated rare earth doped semiconductor layers formed by chemical vapor deposition A CVD process for producing a rare earth-doped, epitaxial semiconductor layer on a substrate is disclosed. The process utilizes a silane or germane and a rare earth compound in the gas phase. By this method single phase, rare earth-doped semiconductor lay... | 07/09/1996 |
| 5364804 | Nitride cap sidewall oxide protection from BOE etch A method of forming a self-aligned contact is disclosed. A pattern of polysilicon gate electrode stack including a silicon oxide gate dielectric, a polysilicon gate electrode, a first thermal polyoxide layer over the top of said polysilicon gate electrode... | 11/15/1994 |
| 5322813 | Method of making supersaturated rare earth doped semiconductor layers by chemical vapor deposition A CVD process for producing a rare earth-doped, epitaxial semiconductor layer on a substrate is disclosed. The process utilizes a silane or germane and a rare earth compound in the gas phase. By this method single phase, rare earth-doped semiconductor lay... | 06/21/1994 |
| 5294287 | Class of magnetic materials for solid state devices A new semiconductor material or compound and method for its manufacture is disclosed. The material or compound has the Formula III-V or IV which includes as part of the compound, a transition element or a rare earth element present in an amount sufficient... | 03/15/1994 |
| 5284793 | Method of manufacturing radiation resistant semiconductor device According to this invention, an oxide film is formed on a semiconductor substrate, a metallic boron film or a film containing at least one selected from the group consisting of boron, phosphorus, and arsenic is deposited on the surface of the resultant st... | 02/08/1994 |
| 5252512 | TEOV doping of gallium arsenide GaAs films compensated with TEOV to reduce free electron concentration are grown having superior morphology by heating the TEOV above the temperature used in the prior art, filtering the other constituents but not the TEOV, and reducing the arsenic ambien... | 10/12/1993 |
| 5212101 | Substitutional carbon in silicon The invention provides a method of producing silicon with about 100% substitutionality of very high concentrations of carbon up to about 1021 cm-3, which has good quality recrystallized layers containing low levels of residual damage... | 05/18/1993 |
| 5208184 | P-N junction diffusion barrier employing mixed dopants Generally, and in one form of the invention, a p-n junction diffusion barrier is disclosed comprising a first semiconductor layer 28 of p-type conductivity, a second semiconductor layer 32 of n-type conductivity and a third semiconductor layer 30 of p-typ... | 05/04/1993 |
| 5185276 | Method for improving low temperature current gain of bipolar transistors A method for improving the low temperature current gain of silicon bipolar transistors by implanting a first and a second impurity of the same conductivity type into the base region to provide a high doping level base that increases bandgap narrowing with... | 02/09/1993 |
| 5156979 | Semiconductor-based radiation-detector element A semiconductor-based radiation-detector element particularly adapted to neutron detection, and the method for making the same, in which a high sensitivity single-crystal semiconductor substrate has diffused therein at-least-one region of 3 He ... | 10/20/1992 |
