Quotables
"Radio has no future."
Lord Kelvin, British mathematician and physicist ; 1897
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 6399457 | Semiconductor device having capacitor and method of manufacturing the same A semiconductor device having a capacitor. The capacitor includes a first electrode, a dielectric layer formed of a metal oxide layer including a Ta2 O5 layer, and a second electrode composed of first and second metal nitride layers ... | 06/04/2002 |
| 6214733 | Process for lift off and handling of thin film materials A process for lift-off of at least one thin film layer situated on a substrate is disclosed, including the steps of: depositing a support layer such as polymer on the thin film layer, wherein the support layer maintains the structural integrity of the thi... | 04/10/2001 |
| 6054370 | Method of delaminating a pre-fabricated transistor layer from a substrate for placement on another wafer A method of fabricating a film of active devices is provided. First damaged regions are formed, in a substrate, underneath first areas of the substrate where active devices are to be formed. Active devices are formed onto the first areas. Second damaged r... | 04/25/2000 |
| 5895259 | Polysilicon diffusion doping method employing a deposited doped oxide layer with a highly uniform thickness A polysilicon diffusion doping method which employs a deposited dopant-rich oxide layer with a highly uniform distribution of dopant atoms and thickness. Polysilicon layers 1,500 angstroms thick have been doped, achieving average resistance values of 60 o... | 04/20/1999 |
| 5882950 | Fabrication method for horizontal direction semiconductor PN junction array A fabrication method for a horizontal direction semiconductor PN junction array which can be achieved when an epitaxial layer is grown by a metalorganic chemical vapor deposition (MOCVD method) by introducing (or doping) a small amount of CCl4 ... | 03/16/1999 |
| 5728605 | Method for producing an optical semiconductor device having a carrier injection path or an electric-field applying path An optical semiconductor device includes a plurality of electrodes formed on a common side of a substrate. On the substrate, a first type conductivity layer, a first main layer such as an active layer, which has any one of an undoped type, a first type co... | 03/17/1998 |
| 4939102 | Method of growing III-V semiconductor layers with high effective hole concentration 36 We have discovered the III-V semiconductor layers with previously unattainably high effective hole concentrations can be produced by molecular growth processes (e.g. MBE) if an amphoteric dopant such as Be is used and if, during the growth of the highl... | 07/03/1990 |
| 4755856 | Znse green light emitting diode A green color light emitting ZnSe diode having a pn junction is fabricated by the use of a ZnSe crystal having a good crystal perfection and being obtained by a solution growth method relying on the temperature difference technique using a solvent contain... | 07/05/1988 |
| 4753895 | Method of forming low leakage CMOS device on insulating substrate A method of fabricating CMOS circuit devices on an insulator substrate is disclosed in which a solid phase epitaxy process is applied to islands for the individual devices in the same step as the channel dopant implants. An ion species, preferably silicon... | 06/28/1988 |
| 4692194 | Method of performing solution growth of a GaAs compound semiconductor crystal layer under control of conductivity type thereof In a solution growth method to perform an epitaxial growth by doping an amphoteric impurity into a Group III-V compound semiconductor crystal, vapor of a crystal-constituting Group V element is supplied to the solution, during the growth process, from abo... | 09/08/1987 |
| 4583110 | Intermetallic semiconductor ohmic contact A 10-6 ohm cm2 ohmic contact is provided by formation of a 20-50 Angstroms deep surface region with a net donor density of higher than 5×1019 /cc. An amphoteric dopant of Si or Ge is incorporated in a pinned Fermi level c... | 04/15/1986 |
| 4384398 | Elimination of silicon pyramids from epitaxial crystals of GaAs and GaAlAs The occurrence of pyramidal protrusions on the surface of GaAs and GaAlAs p-n junction wafers produced by a multislice liquid phase epitaxy process is avoided by slow cooling to a specified quenching temperature or below. The pyramidal protrusions are con... | 05/24/1983 |
| 4300960 | Method of making a light emitting diode A method of making a light emitting diode by a liquid phase epitaxial growth is disclosed, the method comprising the steps of growing a first p-type epitaxial layer from a gallium melt containing Zn, and Ga2 O3 and GaP on an n-type GaP su... | 11/17/1981 |
| 4105472 | Preparation of silicon doped mercury cadmium telluride Mercury cadmium telluride is described having a quantity of a silicon dispersed therein in an amount to measurably increase the donor concentration of the mercury cadmium telluride. Silicon has been found to substitute for metal, either mercury or cadmium... | 08/08/1978 |
| 4035205 | Amphoteric heterojunction A method of manufacturing a hetero junction by epitaxial deposition in a solution. The solution contains an amphoteric dopant and the composition thereof is modified at a temperature which lies between the transition temperatures prior to and after the mo... | 07/12/1977 |
| 4008485 | Gallium arsenide infrared light emitting diode A gallium arsenide infrared-light emitting diode in which an Si-doped p-type GaAs layer is formed on an Si-doped n-type GaAs layer which is performed on an n-type GaAs substrate doped with at least one selected from Sn, Se, Te and S.... | 02/15/1977 |
| 3998672 | Method of producing infrared luminescent diodes A recess is formed in one of the principal surfaces of an N-type substrate of GaAs. Through the liquid phase growth technique, a silicon-doped N-type GaAs layer is formed on the one of the principal surfaces and on the surface of the recess and a silicon-... | 12/21/1976 |
| 3933539 | Solution growth system for the preparation of semiconductor materials The disclosure relates to a method and system for providing epitaxial solution growth of Group III-V compounds, one of which is gallium arsenide onto a substrate wherein the epitaxially grown layer is of uniform thickness over the substrate and the dopant... | 01/20/1976 |
