Bizarre Patents
Crispy Chip Sandwich and Process of Producing a Sandwich Product
A food product comprising a multilayer cookie or snack having outer layers formed from a crispy type edible food product such as a potato chip or corn chip, etc. with an intermediate marshmallow layer being in contact with the inner surface of each crispy chip and one or more filler substances.
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| Number | Title | Issue Date |
| 7435445 | Method for manufacturing semiconductor device Disclosed are PEALD (plasma-enhanced atomic layer deposition) apparatus and PEALD method for manufacturing a semiconductor device, the PEALD apparatus comprising: a housing including a reaction chamber in which a deposition reaction is performed; a rotary disk unit ... | 10/14/2008 |
| 7122454 | Method for improving nitrogen profile in plasma nitrided gate dielectric layers A method is provided wherein a gate dielectric film that is plasma nitrided in a chamber of one system is subsequently heated or “annealed” in another chamber of the same system. Processing delay can be controlled so that all wafers processed in the system exper... | 10/17/2006 |
| 7115508 | Oxide-like seasoning for dielectric low k films A method for seasoning a chamber and depositing a low dielectric constant layer on a substrate in the chamber is provided. In one aspect, the method includes seasoning the chamber with a first mixture comprising one or more organosilicon compounds and one or more ox... | 10/03/2006 |
| 7049154 | Vapor phase growth method by controlling the heat output in the gas introduction region A vapor phase growth method for growing a semiconductor single crystal thin film on a front surface of a semiconductor single crystal substrate (1) while introducing gas into a reaction chamber (11), has a step of performing heating output power contro... | 05/23/2006 |
| 6969682 | Single workpiece processing system A system for processing wafers includes a robot moveable within an enclosure to load and unload workpieces into and out of workpiece processors. A processor includes an upper rotor having alignment pins, and a lower rotor having one or more openings for receiving th... | 11/29/2005 |
| 6930046 | Single workpiece processing system A system and method for processing a workpiece, includes workpiece processors. A robot is moveable within an enclosure to load and unload workpieces into and out of the processors. A processor includes an upper rotor having a central air flow opening. The upper roto... | 08/16/2005 |
| 6900132 | Single workpiece processing system A system for processing semiconductor wafers has process units on a deck of a frame. The process units and the deck have precision locating features, such as tapered pins, for precisely positioning the process units on the deck. Process units can be removed and repl... | 05/31/2005 |
| 6887775 | Process and apparatus for epitaxially coating a semiconductor wafer and epitaxially coated semiconductor wafer A process for epitaxially coating the front surface of a semiconductor wafer in a CVD reactor, the front surface of the semiconductor wafer being exposed to a process gas which contains a source gas and a carrier gas, and the back surface of the semiconductor wafer ... | 05/03/2005 |
| 6884701 | Process for fabricating semiconductor device A process for fabricating a semiconductor device having a buried layer comprises the steps of implanting an impurity ion into where the buried layer to be formed in a substrate, providing the substrate inside a reactor furnace, preparing a nonoxidizing atmosphere in... | 04/26/2005 |
| 6858508 | SOI annealing method A method for annealing an SOI in which two annealing steps are followed by a cooling step. During the second annealing step, the annealing temperature is from 993° C. to the melting point of silicon. During the cooling step, the cooling rate is not less than 0.12°... | 02/22/2005 |
| 6846742 | Si seasoning to reduce particles, extend clean frequency, block mobile ions and increase chamber throughput Embodiments of the present invention include a method of depositing an improved seasoning film. In one embodiment the method includes, prior to performing a substrate processing operation, forming a layer of silicon over an interior surface of the substrate processi... | 01/25/2005 |
| 6844260 | Insitu post atomic layer deposition destruction of active species Systems and methods for insitu post atomic layer deposition (ALD) destruction of active species are provided. ALD processes deposit multiple atomic layers on a substrate. Pre-cursor gases typically enter a reactor and react with the substrate resulting in a monolaye... | 01/18/2005 |
| 6828235 | Semiconductor manufacturing method, substrate processing method, and semiconductor manufacturing apparatus It is an object of the present invention to adjust the transfer environment of a substrate in order to prevent contamination of the substrate surface by impurities. A semiconductor manufacturing apparatus comprises a load-lock chamber 1 in which substrate exc... | 12/07/2004 |
| 6809015 | Method for heat treatment of silicon wafers and silicon wafer According to the present invention, there are provided a method for heat treatment of silicon wafers wherein a silicon wafer is subjected to a heat treatment at a temperature of from 1000° C. to the melting point of silicon in an inert gas atmosphere, and temperatu... | 10/26/2004 |
| 6806194 | Apparatus and methods for processing a workpiece A system for processing a workpiece includes a head attached to a head lifter. A workpiece is supported in the head between an upper rotor and a lower rotor. A base has a bowl for containing a liquid. The head is movable by the head lifter from a first position vert... | 10/19/2004 |
| 6790777 | Method for reducing contamination, copper reduction, and depositing a dielectric layer on a semiconductor device The present invention relates to a method for improving an interface of a semiconductor device. The method comprises providing a first and second substrate having an oxidized region, and establishing a first loading position in a first process chamber. The first and... | 09/14/2004 |
| 6774056 | Sonic immersion process system and methods A process system for processing a semiconductor wafer or other similar flat workpiece has a head including a workpiece holder. A motor in the head spins the workpiece. A head lifter lowers the head to move the workpiece into a bath of liquid in a bowl. Sonic energy ... | 08/10/2004 |
| 6759336 | Methods for reducing contamination of semiconductor substrates Methods for reducing contamination of semiconductor substrates after processing are provided. The methods include heating the processed substrate to remove absorbed chemical species from the substrate surface by thermal desorption. Thermal desorption can be performe... | 07/06/2004 |
| 6716769 | Use of a plasma source to form a layer during the formation of a semiconductor device A method used to form a semiconductor device having a capacitor comprises placing a semiconductor wafer assembly into a chamber of a plasma source, the wafer assembly comprising a layer of insulation having at least one contact therein and a surface, and further com... | 04/06/2004 |
| 6680253 | Apparatus for processing a workpiece A system for processing a workpiece includes a base having a bowl or recess for holding a liquid. A process reactor or head holds a workpiece between an upper rotor and a lower rotor. A head lifter lowers the head holding the workpiece into contact with t... | 01/20/2004 |
| 6667187 | Semiconductor laser and method of manufacturing the same A semiconductor laser of present invention is constructed by an aluminium oxide (Al2 O3) film on an end surface opposed to a beam emission surface of the semiconductor laser, a silicon nitride (SiNx, or Si3 N | 12/23/2003 |
| 6649537 | Intermittent pulsed oxidation process The present invention provides a method of forming a dielectric on a semiconductor substrate. A dielectric is grown at a substrate interface in a plurality of increments. Stress is relieved at the dielectric substrate interface between each increment. In ... | 11/18/2003 |
| 6596631 | Method of forming copper interconnect capping layers with improved interface and adhesion The integrity of the interface and adhesion between a barrier or capping layer and a Cu or Cu alloy interconnect member is significantly enhanced by delaying and/or slowly ramping up the introduction of silane to deposit a silicon nitride capping layer af... | 07/22/2003 |
| 6589868 | Si seasoning to reduce particles, extend clean frequency, block mobile ions and increase chamber throughput Embodiments of the present invention include a method of depositing an improved seasoning film. In one embodiment the method includes, prior to performing a substrate processing operation, forming a layer of silicon over an interior surface of the substra... | 07/08/2003 |
| 6582567 | Method of growing epitaxial layers using magnetron sputter source in MBE apparatus A magnetron sputter source is adapted to fit into a K-cell port in a molecular beam epitaxy apparatus. The MSE source has a protruding cylindrical body for insertion into the K-cell port. The cylindrical body is attached at its proximal end to a flange an... | 06/24/2003 |
| 6573183 | Method and apparatus for controlling contamination during the electroplating deposition of metals onto a semiconductor wafer surface A method and apparatus for the electroplating deposition of a metal onto a semiconductor wafer surface (29), including vibrationally scrubbing the wafer surface (29) during an electroplating process. At least one transducer (32) is mounted to a wall (33) ... | 06/03/2003 |
| 6548411 | Apparatus and methods for processing a workpiece A system for processing a workpiece includes a head attached to a head lifter. A workpiece is supported in the head between an upper rotor and a lower rotor. A base has a bowl for containing a liquid. The head is movable by the head lifter from a first po... | 04/15/2003 |
| 6528435 | Plasma processing An apparatus and method for depositing a thin film on a semiconductor substrate. The apparatus includes a chamber or housing suited for holding a plurality of wafer platforms. The wafer platforms are arranged stacked in the chamber equidistant and electri... | 03/04/2003 |
| 6528427 | Methods for reducing contamination of semiconductor substrates Methods for reducing contamination of semiconductor substrates after processing are provided. The methods include heating the processed substrate to remove adsorbed chemical species from the substrate surface by thermal desorption. Thermal desorption can ... | 03/04/2003 |
| 6511914 | Reactor for processing a workpiece using sonic energy A system for processing a workpiece includes a base having a bowl or recess for holding a liquid. A sonic energy source, such as a megasonic transducer, provides sonic energy into a liquid in the bowl. A process reactor or head holds a workpiece between a... | 01/28/2003 |
| 6498095 | CVD METHOD FOR PRODUCING AN INTERCONNECTION FILM BY DEPOSITING A LOWER LAYER TO FILL A RECESS PERFORMING A CLEANING STEP TO REMOVE DISSOCIATED REACTANT GAS, AND CONSEQUENTLY DEPOSITING AN UPPER LAYER THAT HAS A SMALLER IMPURITY CONCENTRATION THAN THE LOWER LAYER The interconnection system of the present invention comprises an interconnection film formed by chemical vapor deposition, wherein the interconnection film comprises an upper layer and a lower layer in which the concentrations of impurities are different.... | 12/24/2002 |
| 6492284 | Reactor for processing a workpiece using sonic energy A system for processing a workpiece includes a base having a bowl or recess for holding a liquid. A process reactor or head holds a workpiece between an upper rotor and a lower rotor. A head lifter lowers the head holding the workpiece into contact with t... | 12/10/2002 |
| 6447633 | Reactor for processing a semiconductor wafer A method for processing a semiconductor wafer or similar article includes the step of spinning the wafer and applying a fluid to a first side of the wafer, while it is spinning. The fluid flows radially outwardly in all directions, over the first side of ... | 09/10/2002 |
| 6440841 | Method of fabricating vias The present invention is a method of fabricating interconnects. A semiconductor substrate having a dielectric layer is provided. The dielectric layer has a via opening therein, which exposes the semiconductor substrate. Next, the surfaces of the via openi... | 08/27/2002 |
| 6429142 | In-situ photoresist removal by an attachable chamber with light source A method of fabricating integrated circuit wafers, in accordance with this invention comprises the following steps. Provide an integrated circuit wafer having devices formed therein covered with a metal layer and a photoresist layer over the metal layer w... | 08/06/2002 |
| 6429139 | Serial wafer handling mechanism A wafer handling system for a wafer processing apparatus includes a wafer load lock chamber, a wafer processing chamber and a transfer chamber operatively coupled to the wafer load lock chamber and the wafer processing chamber. The transfer chamber includ... | 08/06/2002 |
| 6426303 | Processing system When both a wafer transfer means in a first transfer device and a wafer transfer means in a second transfer device move downward at the same time, the amount of exhaust air by an exhaust fan is increased by the control of a control section, whereby the do... | 07/30/2002 |
| 6383927 | Process for fabricating semiconductor device, apparatus using more than one kind of inert gas for evacuating air and method for entering wafer into the apparatus Semiconductor wafers on a boat are inserted into a furnace chamber of a vertical oxidation/diffusion furnace, and helium gas and argon gas are injected into the furnace chamber during the insertion of the boat, so that the light helium gas fills the furna... | 05/07/2002 |
| 6380103 | Rapid thermal etch and rapid thermal oxidation At least both a rapid thermal etch step and a rapid thermal oxidation step are performed on a semiconductor substrate in situ in a rapid thermal processor. A method including an oxidation step followed by an etch step may be used to remove contamination a... | 04/30/2002 |
| 6365518 | Method of processing a substrate in a processing chamber Methods for processing a substrate are disclosed. In one embodiment of the invention, a substrate with a first layer and an oxide layer on the substrate is placed in a processing chamber. The oxide layer is removed while the substrate is at a first temper... | 04/02/2002 |
