Did You Know...
...that the inventor of the electric motor was a blacksmith named Thomas Davenport? Described as "a brilliantly unsuccessful inventor", Davenport invented the first rotary electric motor. In 1836 he headed out -- on foot -- from his Vermont home to file a patent application at the Patent Office in Washington, D.C. By the time he got there, he had squandered away his money and couldn't afford the $30 filing fee so he turned around and went home. When he later mailed in his application with money he'd raised, the Patent office was destroyed in a fire. He did finally get credit for his invention on Feb. 5, 1837.
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| Number | Title | Issue Date |
| 6858510 | Low-voltage punch-through bi-directional transient-voltage suppression devices having surface breakdown protection and methods of making the same A method of making a bi-directional transient voltage suppression device is provided, which comprises: (a) providing a p-type semiconductor substrate; (b) epitaxially depositing a lower semiconductor layer of p-type conductivity; (c) epitaxially depositing a middle ... | 02/22/2005 |
| 6709914 | Manufacturing process of pn junction diode device and pn junction diode device One aspect of the present invention is a to provide a process for manufacturing a pn junction diode, includes providing a semiconductor wafer having an n-type cathode layer formed thereon. Then, a p-type anode layer is formed on the n-type cathode layer so that a pn... | 03/23/2004 |
| 5882950 | Fabrication method for horizontal direction semiconductor PN junction array A fabrication method for a horizontal direction semiconductor PN junction array which can be achieved when an epitaxial layer is grown by a metalorganic chemical vapor deposition (MOCVD method) by introducing (or doping) a small amount of CCl4 ... | 03/16/1999 |
| 5756387 | Method for forming zener diode with high time stability and low noise Zener diode with high stability in time and low noise for integrated circuits and provided in an epitaxial pocket insulated from the rest of a type N epitaxial layer grown on a substrate of type P semiconductor material. In said pocket are included a type... | 05/26/1998 |
| 4728616 | Ballistic heterojunction bipolar transistor A heterojunction transistor doped to form a specially-shaped emitter-base conduction band step or spike is disclosed. The potential barrier is then utilized to accelerate electrons across the base region at the maximum velocity obtainable without scatteri... | 03/01/1988 |
| 4251287 | Amorphous semiconductor solar cell A solar cell comprising a back electrical contact, amorphous silicon semiconductor base and junction layers and a top electrical contact includes in its manufacture the step of heat treating the physical junction between the base layer and junction layer ... | 02/17/1981 |
| 4183035 | Inverted heterojunction photodiode A low-leakage, heterojunction photodiode for use as a detector sensitive to infrared radiation is provided. The diode structure comprises a PbTe substrate of n-type conductivity with an n-type epitaxial buffer layer on the substrate and an epitaxial activ... | 01/08/1980 |
| 4166278 | Semiconductor injection laser device N type CaAlAs, GaAs and GaAlAs layers are successively grown on a semi-insulating GaAs substrate doped with Cr to form a semiconductor chip. Predetermined portions of those layers are selectively etched away to a depth reaching the substrate. Then a P typ... | 08/28/1979 |
| 4163987 | GaAs-GaAlAs solar cells The specification describes an improved III-V compound solar cell structure and fabrication process therefor wherein a P-type layer of gallium aluminum arsenide is epitaxially grown on an N-type gallium arsenide substrate to form a P-type region and a PN ... | 08/07/1979 |
| 4126930 | Magnesium doping of AlGaAs Aluminum gallium arsenide is used as a transparent, conducting contact layer on the exposed surface of a gallium arsenide photovoltaic cell. Increased conductivity for the high current generated when concentrated solar radiation strikes the cell, is provi... | 11/28/1978 |
