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| Number | Title | Issue Date |
| 8133755 | Avalanche photodiode having controlled breakdown voltage Avalanche photodiodes and methods for forming them are disclosed. The breakdown voltage of an avalanche photodiode is controlled through the inclusion of a diffusion sink that is formed at the same time as the device region of the photodiode. The device region and d... | 03/13/2012 |
| 8076173 | Semiconductor device and method of producing the same A semiconductor substrate and a method of its manufacture has a semiconductor substrate having a carbon concentration in a range of 6.0×1015 to 2.0×1017 atoms/cm3, both inclusively. One principal surface of the substrate is irradia... | 12/13/2011 |
| 7964435 | Method for dopant diffusion A method for controlling dopant diffusion is disclosed. Using certain control parameters that are not used in the prior art, the method provides an unprecedented measure of control over the dopant diffusion process. The control parameters include, among others, the ... | 06/21/2011 |
| 7851251 | Portable optical detection chip and manufacturing method thereof A portable optical detection chip comprises a substrate, a plurality of avalanche-type photosensitive device modules and a plurality of plane mirrors. The plurality of avalanche-type photosensitive device modules are formed on the substrate, and each of them compris... | 12/14/2010 |
| 7695997 | Semiconductor device and manufacturing method thereof An electrostatic discharge protection element and a protection resistor, which are formed on an N− drain region with a field oxide film interposed therebetween for the purpose of preventing electrical breakdown of a field effect transistor, are composed as a stack... | 04/13/2010 |
| 7553690 | Starved source diffusion for avalanche photodiode This disclosure is concerned with starved source diffusion methods for forming avalanche photodiodes are provided for controlling an edge effect. In one example, a method for manufacturing an avalanche photodiode includes forming an absorber layer and an avalanche l... | 06/30/2009 |
| 7510903 | Transient voltage suppression device A bi-directional transient voltage suppression (“TVS”) device (101) includes a semiconductor die (201) that has a first avalanche diode (103) in series with a first rectifier diode (104) connected cathode to cathode, electrically coup... | 03/31/2009 |
| 7429761 | High power diode utilizing secondary emission A high power diode includes a cathode for emitting a primary electron discharge, an anode, and a porous dielectric layer, e.g. a honeycomb ceramic, positioned between the cathode and the anode for receiving the primary electron discharge and emitting a secondary ele... | 09/30/2008 |
| 7384854 | Method of forming low capacitance ESD robust diodes A method of forming a diode having a capacitance below 0.1 pF and a breakdown voltage of at least 500V. The method including forming an anode of a first conductivity type and a cathode of a second conductivity type disposed below the anode. At least one of the catho... | 06/10/2008 |
| 7365773 | CMOS APS with stacked avalanche multiplication layer and low voltage readout electronics An image sensor includes a pixel having a protection circuit connected to a charge multiplying photoconversion layer. The protection circuit prevents the pixel circuit from breaking down when the voltage in the pixel circuit reaches the operating voltage applied to ... | 04/29/2008 |
| 7348607 | Planar avalanche photodiode The present invention includes a planar avalanche photodiode having a first n-type semiconductor layer defining a planar contact area, and a second n-type semiconductor layer having a p-type diffusion region. Further features of the structure includes an n-type semi... | 03/25/2008 |
| 7348608 | Planar avalanche photodiode A planar avalanche photodiode includes a small localized contact layer on the top of the device produced by either a diffusion or etching process and a semiconductor layer defining a lower contact area. A semiconductor multiplication layer is positioned between the ... | 03/25/2008 |
| 7309638 | Method of manufacturing a semiconductor component A semiconductor component comprises a first semiconductor region (110, 310), a second semiconductor region (120, 320) above the first semiconductor region, a third semiconductor region (130, 330) above the second semiconductor region, a fourth s... | 12/18/2007 |
| 7268010 | Method of manufacturing an LED The present invention related to a method of manufacturing an LED, including the steps of: first, forming a tape coppery metal strip; then, continuously pressing circuits on the tape coppery metal strip so as to form a carrier having circuit patterns of electric con... | 09/11/2007 |
| 7268339 | Large area semiconductor detector with internal gain A method is provided for forming a semiconductor-detection device that provides internal gain. The method includes forming a plurality of bottom trenches in a bottom surface of an n-doped semiconductor wafer; and forming a second plurality of top trenches in a top s... | 09/11/2007 |
| 7229932 | Method and structure for fabricating a halftone mask for the manufacture of semiconductor wafers A method for manufacturing a mask for integrated circuit devices. The method includes providing a quartz substrate having a surface and forming a MoSi film overlying the surface of the quartz substrate. The method also includes patterning the MoSi film overlying the... | 06/12/2007 |
| 7169634 | Design and fabrication of rugged FRED An improved Fast Recovery Diode comprises a main PN junction defining a central conduction region for conducting high current in a forward direction and a peripheral field spreading region surrounding the central conduction region for blocking high voltage in the re... | 01/30/2007 |
| 7169628 | Cold cathode field emission device and process for the production thereof, and cold cathode field emission display and process for the production thereof A process for producing a cold cathode field emission device. A cathode electrode is formed on a front surface of a support member that transmits exposure light. An insulating layer is formed on an entire surface. A gate electrode is formed on the insulating layer. ... | 01/30/2007 |
| 7166482 | Cold cathode field emission device and process for the production thereof, and cold cathode field emission display and process for the production thereof A process for producing a cold cathode field emission device. A cathode electrode is formed on a front surface of a support member that transmits exposure light. An insulating layer is formed on an entire surface. A gate electrode is formed on the insulating layer. ... | 01/23/2007 |
| 7144787 | Methods to improve the SiGe heterojunction bipolar device performance Methods of boosting the performance of bipolar transistor, especially SiGe heterojunction bipolar transistors, is provided together with the structure that is formed by the inventive methods. The methods include providing a species-rich dopant region comprising C, a... | 12/05/2006 |
| 7112465 | Fabrication methods for ultra thin back-illuminated photodiode array Ultra thin back-illuminated photodiode array structures and fabrication methods. The photodiode arrays are back illuminated photodiode arrays having a substrate of a first conductivity type having first and second surfaces, the second surface having a layer of the f... | 09/26/2006 |
| 7091527 | Semiconductor photodetection device A semiconductor photodetection device includes a semiconductor structure including an optical absorption layer having a photo-incidence surface on a first side thereof, a dielectric reflecting layer formed on a second side of the semiconductor structure opposite to ... | 08/15/2006 |
| 7056761 | Avalanche diode with breakdown voltage controlled by gate length In an avalanche structure, different breakdown voltages are achieved by making use of a polygate and forming a highly doped p-n junction beneath the polygate, and adjusting the gate length and optionally the bias voltage of the gate. ... | 06/06/2006 |
| 7042059 | Optical semiconductor device and method for manufacturing optical semiconductor device An optical semiconductor device includes: a photo detector section which includes: a first semiconductor layer of a first conductivity type formed on a surface of a semiconductor substrate of the first conductivity type, a second semiconductor layer of a second cond... | 05/09/2006 |
| 6946318 | Method of forming GE photodetectors A photodetector device includes a plurality of Ge epilayers that are grown on a substrate and annealed in a defined temperature range. The Ge epilayers form a tensile strained Ge layer that allows the photodetector device to operate efficiently in the C-band and L-b... | 09/20/2005 |
| 6933169 | Optical semiconductor device A LED has a thin highly resistive or insulative layer formed below an electrode pad in order to divert current flow from the region below an electrode pad, which region does not contribute to light emission, to another region which does. Consequently, better current... | 08/23/2005 |
| 6885039 | Semiconductor photodetector and avalanche photodiode There is provided a semiconductor photodetector which comprises (i) an InP substrate(1), (ii) an optical waveguide(5) having an N-type semiconductor layer(32) formed on the InP substrate(1), an optical waveguide core layer(3) forme... | 04/26/2005 |
| 6869820 | High efficiency light emitting diode and method of making the same A high efficiency light emitting diode (LED) with metal reflector and the method of making the same is disclosed. The metal reflector is composed of at least two layers with one transparent conductive layer and the other highly reflective metal layer. The transparen... | 03/22/2005 |
| 6855587 | Gate-controlled, negative resistance diode device using band-to-band tunneling A new gate-controlled, negative resistance diode device is achieved. The device comprises, first, a semiconductor layer in a substrate. The semiconductor layer contains an emitter region and a barrier region. The barrier region is in contact with the emitter region ... | 02/15/2005 |
| 6833284 | Method for subdividing wafers into chips In order to subdivide a wafer (1) into chips, recesses (7) are introduced from a rear side (6), said recesses weakening the wafer (1) at the breaking points. As a result, it is possible to produce chips whose length dimensions are less th... | 12/21/2004 |
| 6821831 | Electrostatic discharge protection in double diffused MOS transistors The specification describes a DMOS transistor that is fully integrated with an electrostatic protection diode (ESD). The ESD diode is isolated from the DMOS device by a trench. The trench is metallized to tie the guard ring of the ESD to the substrate thereby increa... | 11/23/2004 |
| 6797581 | Avalanche photodiode for photon counting applications and method thereof A method for manufacturing an improved APD structure and an improved manner of operating APD's particularly beneficial for a single photon detection applications are provided. An APD is provided having an absorption region, a control region, and a multiplication reg... | 09/28/2004 |
| 6774460 | IMPATT diodes The present invention relates to an impact ionisation avalanche transit time (IMPATT) diode device comprising an avalanche region and a drift region, wherein at least one narrow bandgap region, with a bandgap narrower than the bandgap in the avalanche region, is loc... | 08/10/2004 |
| 6743657 | Method for combined fabrication of indium gallium arsenide/indium phosphide avalanche photodiodes and P-I-N photodiodes An Indium/Gallium/Arsenide (InGaAs) detector having avalanche photodiodes (APD's) and p-i-n photodiodes on a single chip is provided. A method of fabricating the InGaAs device is also provided. The bias on the APD and p-i-n photodiodes are separately controlled.... | 06/01/2004 |
| 6686647 | Gunn diode and method of manufacturing the same Indium phosphor (InP) Gunn diode that realizes improvements in thermal characteristics, yield factor of good products and easy assembly to planar circuits is provided. In a Gunn diode of the present invention, contact layers are interposing an active laye... | 02/03/2004 |
| 6683334 | Compound semiconductor protection device for low voltage and high speed data lines The invention relates to the protection of devices in a monolithic chip fabricated from an epitaxial wafer, such as a wafer for a Group III-V compound semiconductor or a wafer for a Group IV compound semiconductor. Devices fabricated from Group III-V comp... | 01/27/2004 |
| 6677655 | Silicon wafer with embedded optoelectronic material for monolithic OEIC A structure with an optically active layer embedded in a Si wafer, such that the outermost epitaxial layer exposed to the CMOS processing equipment is always Si or another CMOS-compatible material such as SiO2. Since the optoelectronic layer is... | 01/13/2004 |
| 6492239 | Method for fabricating avalanche photodiode An avalanche photodiode fabricating method with a simplified fabrication process and an improved reproducibility is disclosed. The method for fabricating an avalanche photodiode includes the steps of: (a) sequentially stacking, on an n-type InP substrate,... | 12/10/2002 |
| 6489659 | Non-hermetic APD A non-hermetic APD for operation in a moisture-containing ambient comprises an InP/InGaAsP-containing Group III-V compound semiconductor body and a p-n junction formed in the body. Typically the junction intersects a top surface of the body. A patterned d... | 12/03/2002 |
| 6482671 | Integrated optoelectronic device with an avalanche photodetector and method of making the same using commercial CMOS processes An integrated optoelectronic circuit chip for optical data communication systems includes a silicon substrate, at least one MOS field effect transistor (MOSFET) formed on a portion of the silicon substrate, and an avalanche photodetector operatively respo... | 11/19/2002 |
