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| Number | Title | Issue Date |
| 7399708 | Method of treating a composite spin-on glass/anti-reflective material prior to cleaning Methods are provided for cleaning a microelectronic device, and one method includes providing a substrate having a patterned SOG/anti-reflective material; performing a process to cure the patterned SOG/anti-reflective material; and performing a cleaning process to r... | 07/15/2008 |
| 7390758 | Method of manufacturing a semiconductor integrated circuit device with elimination of static charge A sealed type container accommodating a semiconductor substrate is positioned to a load port of a semiconductor manufacturing apparatus. The semiconductor substrate is taken out of the container. An ionizer is used for static-eliminating the semiconductor substrates... | 06/24/2008 |
| 7329308 | Air handling and chemical filtration system and method The present invention relates to systems and methods for controlling humidity and temperature in gases or air streams used in semiconductor processing systems. These systems and methods can be used in combination with systems and methods for contaminant detection an... | 02/12/2008 |
| 7172981 | Semiconductor integrated circuit device manufacturing method including static charge elimination A sealed type container accommodating a semiconductor substrate is positioned to a load port of a semiconductor manufacturing apparatus. The semiconductor substrate is taken out of the container. An ionizer is used for static-charge-eliminating the semiconductor sub... | 02/06/2007 |
| 7163849 | Fabrication method of semiconductor integrated circuit device Upon formation of an impurity-added silicon film by a low-pressure CVD apparatus, diffusion of an impurity from another similar silicon film, which has already been formed over the inside walls of the deposition chamber, is suppressed in the following manner. After ... | 01/16/2007 |
| 7135418 | Optimal operation of conformal silica deposition reactors Methods of forming conformal films that reduce the amount of metal-containing precursor and/or silicon containing precursor materials required are described. The methods increase the amount of film grown following each dose of metal-containing and/or silicon-contain... | 11/14/2006 |
| 7118683 | Methods of etching silicon-oxide-containing compositions The invention encompasses a method of enhancing selectivity of etching silicon dioxide relative to one or more organic substances. A material comprising one or more elements selected from Group VIII of the periodic table is provided within a reaction chamber; and a ... | 10/10/2006 |
| 7109129 | Optimal operation of conformal silica deposition reactors Methods of forming conformal films that reduce the amount of metal-containing precursor and/or silicon containing precursor materials required are described. The methods increase the amount of film grown following each dose of metal-containing and/or silicon-contain... | 09/19/2006 |
| 7090716 | Single phase fluid imprint lithography method The present invention is directed toward a method for reducing pattern distortions in imprinting layers by reducing gas pockets present in a layer of viscous liquid deposited on a substrate. To that end, the method includes varying a transport of the gases disposed ... | 08/15/2006 |
| 7064084 | Oxide film forming method To provide a method for the formation of oxide films to form with advantage a high-quality oxide film having excellent uniformity in film thickness and film quality over the entire wafer. The method for the formation of oxide films comprises: the pretreatment proces... | 06/20/2006 |
| 7049154 | Vapor phase growth method by controlling the heat output in the gas introduction region A vapor phase growth method for growing a semiconductor single crystal thin film on a front surface of a semiconductor single crystal substrate (1) while introducing gas into a reaction chamber (11), has a step of performing heating output power contro... | 05/23/2006 |
| 6977225 | Chemical vapor deposition of titanium from titanium tetrachloride and hydrocarbon reactants A new process for depositing titanium metal layers via chemical vapor deposition is disclosed. The process provides deposited titanium layers having a high degree of conformality, even in trenches and contact openings having aspect ratios greater than 1:5. ... | 12/20/2005 |
| 6962878 | Method to reduce photoresist mask line dimensions A method for reducing the dimension of a patterned organic photoresist area by reducing the pressure of a reactive environment surrounding the patterned photoresist to cause outgasing. The outgased materials CxHyOz are then decompose... | 11/08/2005 |
| 6933249 | Method of fabricating semiconductor device A manufacturing method for semiconductor devices that can improve uniformity in the surface of a silicon nitride film or a nitride film to be formed and improve production efficiency is provided. A step of forming a first film that is a silicon oxide film or a silic... | 08/23/2005 |
| 6933236 | Method for forming pattern using argon fluoride photolithography A method for forming a photoresist pattern with minimally reduced transformations through the use of ArF photolithography, including the steps of: forming an organic anti-reflective coating layer on a an etch-target layer already formed on a substrate; coating a pho... | 08/23/2005 |
| 6929985 | Air filter, method of manufacturing air filter, local facility, clean room, treating agent, and method of manufacturing filter medium A material not releasing gaseous organic substances during use is used as a filter medium and a sealing material for tightly sealing between the medium and a frame. Specifically, a synthetic paraffin not containing an aliphatic hydrocarbon having not more than 19 ca... | 08/16/2005 |
| 6903030 | System and method for heat treating semiconductor A supply system in a heat-treating apparatus for a semiconductor process has a combustor (12), heating unit (13), and gas distributor (14). The combustor (12) has a combustion chamber (59) disposed outside a process chamber (21 | 06/07/2005 |
| 6890866 | Method for manufacturing semiconductor device A method for manufacturing a semiconductor device having a semiconductor substrate with a contact hole filled by an aluminum-containing thin film. This manufacturing method includes a step of forming a silicon-containing thin film so as to fill the contact hole on t... | 05/10/2005 |
| 6867152 | Properties of a silica thin film produced by a rapid vapor deposition (RVD) process A rapid vapor deposition (RVD) method conformally deposits a dielectric material on small features of a substrate surface. The resulting dielectric film has a low dielectric constant, low wet etch rate, low film shrinkage and low stress hysteresis, appropriate for v... | 03/15/2005 |
| 6841056 | Apparatus and method for treating a substrate electrochemically while reducing metal corrosion A process tool for electrochemically treating a substrate is configured to reduce the oxygen concentration and/or the sulfur dioxide concentration in the vicinity of the substrate so that corrosion of copper may be reduced. In one embodiment, a substantially inert a... | 01/11/2005 |
| 6838359 | Suppression of n-type autodoping in low-temperature Si and SiGe epitaxy A method of manufacturing a semiconductor device, which method comprises the step of epitaxially growing a stack comprising an n-type doped layer of a semiconductor material followed by at least one further layer of a semiconductor material, the stack being grown in... | 01/04/2005 |
| 6833306 | Deuterium treatment of semiconductor device Semiconductor device annealing process with deuterium at superatmospheric pressures to improve reduction of the effects of hot carrier stress during device operation, and devices produced thereby. ... | 12/21/2004 |
| 6809035 | Hot plate annealing A rapid thermal processor, having a process chamber, including a stable heat source in the form of a heatable mass. Heat is provided to the heatable mass using a series of heating devices. The temperature of the heatable mass establishes the temperature of a semicon... | 10/26/2004 |
| 6787377 | Determining method of thermal processing condition The invention is a method of determining a set temperature profile for a method of controlling respective substrate temperatures of a plurality of groups in accordance with respective corresponding set temperature profiles, in a method of heat processing a plurality... | 09/07/2004 |
| 6782907 | Gas recirculation flow control method and apparatus for use in vacuum system A gas recirculation flow control method and apparatus for use in an evacuation system having a vacuum chamber into which a gas is introduced, a first vacuum pump for exhausting the gas from the vacuum chamber and reducing the pressure in the vacuum chamber to a desi... | 08/31/2004 |
| 6689699 | Method for manufacturing a semiconductor device using recirculation of a process gas There is disclosed a semiconductor processing apparatus comprising a process chamber treating a substrate, a process gas feeder feeding a process gas to the process chamber, a first vacuum pump exhausting the process chamber, a second vacuum pump inhaling... | 02/10/2004 |
| 6670282 | Method and apparatus for producing silicon carbide crystal To produce a SiC crystal in a shape which is used as a wafer, a guide is disposed around a SiC crystal substrate so as to cover a peripheral portion of the SiC crystal substrate. Temperature of the guide may be made higher than the sublimation temperature... | 12/30/2003 |
| 6642078 | Method for manufacturing diode subassemblies used in rectifier assemblies of engine driven generators A method of manufacturing a diode assembly used in rectifier assemblies of engine-driven generators is disclosed. The diode assemblies have diode cups, semiconductor diode dies and diode leads fitted therein. The diode subassemblies are reflow soldered, s... | 11/04/2003 |
| 6559053 | Method of passivating an oxide surface subjected to a conductive material anneal A method of preventing formation of titanium oxide within a semiconductor device structure during a high temperature treatment of the device structure includes forming a passivation layer to preclude formation of titanium oxide at a titanium/oxide interfa... | 05/06/2003 |
| 6524952 | Method of forming a titanium silicide layer on a substrate A method of forming a silicide layer in contact with a silicon substrate. The method comprises forming the silicide layer by supplying a silicon-containing source that is different from the silicon substrate, such that the silicon in the silicide layer or... | 02/25/2003 |
| 6521477 | Vacuum package fabrication of integrated circuit components A method for vacuum packaging MEMS or similar devices during device fabrication comprises forming a plurality of MEMS devices (12), or similar devices, on a device wafer (10). A device sealing ring (16) is formed between the MEMS devices (12) and bonding ... | 02/18/2003 |
| 6497734 | Apparatus and method for enhanced degassing of semiconductor wafers for increased throughput A multi-level shelf degas station relying on at least two heaters integrated within wafer holding shelves or slots, where the semiconductor wafers do not have direct contact with the heater shelves. The heaters provide conduction heating. In order to dega... | 12/24/2002 |
| 6458715 | Process of manufacturing semiconductor device A target semiconductor device can be obtained stably by reforming an insulating film and a semiconductor. In a process of manufacturing a semiconductor device, at least one of the semiconductor and the insulating film is reformed after an annealing proces... | 10/01/2002 |
| 6444480 | Thermal treatment apparatus, semiconductor device fabrication apparatus, load-lock chamber, and method of fabricating semiconductor device A semiconductor device fabrication apparatus includes a thermal treatment device for thermally processing a semiconductor substrate, a first oxygen monitor for monitoring the density of oxygen in said thermal treatment device, a load-lock chamber separabl... | 09/03/2002 |
| 6423654 | Method of manufacturing a semiconductor device having silicon oxynitride passavation layer There is provided a semiconductor device having a silicon oxynitride passivation layer and a fabrication method thereof. The passivation layer is formed of a silicon oxynitride having a dielectric constant of 5.0-6.0 and an atomic composition ratio of sil... | 07/23/2002 |
| 6413887 | Method for producing silicon nitride series film A method for producing a plasma silicon nitride series film with a small heat load having a low hydrogen concentration is provided. The method is for producing a silicon nitride series film on a material to be treated using a plasma CVD apparatus having a... | 07/02/2002 |
| 6387712 | Process for preparing ferroelectric thin films In a film structure comprising a ferroelectric thin film formed on a substrate, the ferroelectric thin film contains a rare earth element (Rn), Pb, Ti, and O in an atomic ratio in the range: 0.8ࣘ(Pb+Rn)/Tiࣘ1.3 and 0.5ࣘPb/(Pb+Rn)ࣘ0.99, has a p... | 05/14/2002 |
| 6365510 | Method for fabricating a contact layer A contact layer is used, for example, as a liner for the fabrication of electrical contacts in contact holes. The contact layer is fabricated in two steps, in a first step a first contact layer is deposited, in which only a small proportion of the particl... | 04/02/2002 |
| 6313953 | Gas chemical filtering for optimal light transmittance; and methods Systems and methods of achieving optimal light transmittance through a gas and light transmittance region. This invention is directed at the application of specific activated carbon based materials for the protection of imaging lenses which are targeting ... | 11/06/2001 |
| 6260266 | Method of forming wire interconnection wire A silicon substrate on which a silicon dioxide film having a groove is formed is placed on a sample stage disposed in a vacuum chamber. Subsequently, a titanium film and a tungsten film are deposited sequentially on the silicon dioxide film. The surface o... | 07/17/2001 |
