Did You Know...
...that it was melting ice cream that inspired the invention of the outboard motor? It was a lovely August day and Ole Evinrude was rowing his boat to his favorite island picnic spot. As he rowed, he watched his ice cream melt and wished he had a faster way to get to the island. At that moment the idea for the outboard motor was born!
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| Number | Title | Issue Date |
| 8247332 | Hardmask materials Hardmask films having high hardness and low stress are provided. In some embodiments a film has a stress of between about −600 MPa and 600 MPa and hardness of at least about 12 GPa. In some embodiments, a hardmask film is prepared by depositing multiple sub-layers... | 08/21/2012 |
| 7494943 | Method for using film formation apparatus In a method for using a film formation apparatus for a semiconductor process, process conditions of a film formation process are determined. The process conditions include a preset film thickness of a thin film to be formed on a target substrate. Further, a timing o... | 02/24/2009 |
| 7432215 | Semiconductor device manufacturing method and semiconductor manufacturing apparatus A semiconductor device manufacturing method comprises a first step of forming, by a thermal chemical vapor deposition method, a silicon nitride film on an object disposed in a reaction container, with bis tertiary butyl amino silane and NH3 flowing into t... | 10/07/2008 |
| 7402258 | Methods of removing metal contaminants from a component for a plasma processing apparatus Methods of removing metal contaminants from a component for a plasma processing apparatus are provided. The method includes cleaning a surface of the component with a cleaning liquid that includes at least one acid selected from oxalic acid, formic acid, acetic acid... | 07/22/2008 |
| 7381344 | Method to reduce particle level for dry-etch The invention teaches a multi-step method for shutting down the dry-etch process. The ICP rf power is reduced between each of these consecutive power-down steps of the dry-etch process, the complete power-down sequence consists of six steps. These six steps are exec... | 06/03/2008 |
| 7371688 | Removal of transition metal ternary and/or quaternary barrier materials from a substrate A process for the selective removal of a substance from a substrate for etching and/or cleaning applications is disclosed herein. In one embodiment, there is provided a process for removing a substance from a substrate comprising: providing the substrate having the ... | 05/13/2008 |
| 7358196 | Wet chemical treatment to form a thin oxide for high k gate dielectrics Described herein are methods of forming a thin silicon dioxide layer having a thickness of less than eight angstroms on a semiconductor substrate to form the bottom layer of a gate dielectric. A silicon dioxide layer having a thickness of less than eight angstroms m... | 04/15/2008 |
| 7354525 | Specimen surface processing apparatus and surface processing method For a surface processing apparatus using a plasma, a mixed gas of a fluorine-containing gas and an oxygen gas is used as an ashing gas. A mixed gas of an oxygen gas and a fluorine-containing gas is introduced as an ashing gas. This allows the following steps to be c... | 04/08/2008 |
| 7332425 | Simultaneous deposition and etch process for barrier layer formation in microelectronic device interconnects The present invention provides a method of forming a interconnect barrier layer 100. In the method, physical vapor deposition of barrier material 200 is performed within an opening 140 located in a dielectric layer 135 of a substrate 1... | 02/19/2008 |
| 7322368 | Plasma cleaning gas and plasma cleaning method A plasma cleaning gas for CVD chamber is a gas for cleaning silicon-containing deposits on the surface of a CVD chamber inner wall and the surfaces of members placed inside the CVD chamber after film forming treatment on a substrate by a plasma CVD apparatus. The cl... | 01/29/2008 |
| 7323399 | Clean process for an electron beam source One embodiment of the present invention is a method for cleaning an electron beam treatment apparatus that includes: (a) generating an electron beam that energizes a cleaning gas in a chamber of the electron beam treatment apparatus; (b) monitoring an electron beam ... | 01/29/2008 |
| 7311109 | Method for cleaning a processing chamber and method for manufacturing a semiconductor device A method for cleaning a processing chamber and manufacturing a semiconductor device by removing impurities from a substrate in the processing chamber with a plasma of a first gas including hydrogen gas. After the substrate is removed from the processing chamber, the... | 12/25/2007 |
| 7270761 | Fluorine free integrated process for etching aluminum including chamber dry clean A fluorine-free integrated process for plasma etching aluminum lines in an integrated circuit structure including an overlying anti-reflection coating (ARC) and a dielectric layer underlying the aluminum, the process being preferably performed in a single plasma rea... | 09/18/2007 |
| 7267132 | Methods for removing silicon and silicon-nitride contamination layers from deposition tubes Described are methods, systems, and chemistries for removing layers of stubborn silicon and silicon-nitride contamination layers from the inside surfaces of such articles as deposition tubes. In such embodiments, a tube to be cleaned is gently rolled on it side whil... | 09/11/2007 |
| 7268089 | Method for forming PE-TEOS layer of semiconductor integrated circuit device A method of forming a PE-TEOS layer of a semiconductor IC device provides uniformly thick PE-TEOS layers on a batch of wafers. First, a loading wafer cassette is prepared to provide the wafers to be processed. Next, a process atmosphere is pre-created in a processin... | 09/11/2007 |
| 7250114 | Methods of finishing quartz glass surfaces and components made by the methods Methods of surface finishing a component useful for a plasma processing apparatus are provided. The component includes at least one plasma-exposed quartz glass surface. The method includes mechanically polishing, chemically etching and cleaning the plasma-exposed su... | 07/31/2007 |
| 7234476 | Method of cleaning CVD equipment processing chamber A method of remote plasma cleaning a processing chamber of CVD equipment, which has high cleaning rates, low cleaning operational cost and high efficiency, is provided. The method comprises supplying cleaning gas to the remote plasma-discharge device; activating the... | 06/26/2007 |
| 7223446 | Plasma CVD apparatus and dry cleaning method of the same In a parallel flat plate type plasma CVD apparatus, plasma damage of constituent parts in a reaction chamber due to irregularity of dry cleaning in the reaction chamber is reduced and the cost is lowered. In the parallel flat plate type plasma CVD apparatus in which... | 05/29/2007 |
| 7211518 | Waferless automatic cleaning after barrier removal A method for forming features in dielectric layers and opening barrier layers for a plurality of wafers and cleaning an etch chamber after processing and removing each wafer of the plurality of wafers is provided. A wafer of the plurality of wafers is placed into th... | 05/01/2007 |
| 7207339 | Method for cleaning a plasma enhanced CVD chamber A method for plasma cleaning a CVD reactor chamber including providing a plasma enhanced CVD reactor chamber comprising residual deposited material; performing a first plasma process comprising an oxygen containing plasma; performing a second plasma process comprisi... | 04/24/2007 |
| 7201807 | Method for cleaning a deposition chamber and deposition apparatus for performing cleaning Disclosed are a method for cleaning a deposition chamber by removing attached metal oxides, and a deposition apparatus for performing in situ cleaning. A first gas and a second gas are provided into the deposition chamber. The first gas is reacted with metal include... | 04/10/2007 |
| 7201174 | Processing apparatus and cleaning method In a chamber (11), a SiOF film is formed on a wafer W using a plasma CVD method. A film remaining inside the chamber (11) is cleaned up using a gas containing NF3. A manometer (28) is prepared for the chamber (11). An end point... | 04/10/2007 |
| 7202099 | Method of fabricating a laser diode that includes thermally cleaning a deposition reactor using a gas mixture of arsine and hydrogen Provided is a method of fabricating a laser diode including a lower Al-containing semiconductor material layer, a active layer, and an upper Al-containing semiconductor material layer. The method includes thermally cleaning the inside of a deposition reactor in whic... | 04/10/2007 |
| 7182819 | Methods for cleaning a chamber of semiconductor device manufacturing equipment Methods for cleaning a chamber of semiconductor device manufacturing equipment are disclosed. An illustrated method comprises supplying cleaning gas into a chamber to start a cleaning process; detecting the intensity of a wavelength for the cleaning gas; fixing a va... | 02/27/2007 |
| 7168436 | Gas for removing deposit and removal method using same The invention relates to a gas for removing deposits by a gas-solid reaction. This gas includes a hypofluorite that is defined as being a compound having at least one OF group in the molecule. Various deposits can be removed by the gas, and the gas can easily be mad... | 01/30/2007 |
| 7163849 | Fabrication method of semiconductor integrated circuit device Upon formation of an impurity-added silicon film by a low-pressure CVD apparatus, diffusion of an impurity from another similar silicon film, which has already been formed over the inside walls of the deposition chamber, is suppressed in the following manner. After ... | 01/16/2007 |
| 7159597 | Multistep remote plasma clean process A process for removing unwanted deposition build-up from one or more interior surfaces of a substrate processing chamber after depositing a layer of material over a substrate disposed in the chamber. In one embodiment the process comprises transferring the substrate... | 01/09/2007 |
| 7156923 | Silicon nitride film forming method, silicon nitride film forming system and silicon nitride film forming system precleaning method A thermal processing system (1) includes a reaction vessel (2) capable of forming a silicon nitride film on semiconductor wafers (10) through interaction between hexachlorodisilane and ammonia, and an exhaust pipe (16) connected to the re... | 01/02/2007 |
| 7150796 | Method of removing PECVD residues of fluorinated plasma using in-situ Hplasma In a method of affecting cleaning or chamber process control to remove residues of fluorinated discharges from internal PECVD chamber hardware during manufacture of a semiconductor or integrated circuit, the improvement of removing the fluorinated discharges without... | 12/19/2006 |
| 7140374 | System, method and apparatus for self-cleaning dry etch A method for cleaning a processing chamber that includes heating an inner surface of the processing chamber to a first temperature. The first temperature can be sufficient to cause a first species to become volatile. The first species can be one of several species d... | 11/28/2006 |
| 7141512 | Method of cleaning semiconductor device fabrication apparatus A semiconductor device fabrication apparatus is cleaned after a conductive layer is formed on a metal oxide layer of a substrate. The substrate is disposed on a heater in a process chamber of the apparatus, and the conductive layer is formed by introducing source ga... | 11/28/2006 |
| 7141492 | Method for forming thin-film, apparatus for forming thin-film, method for manufacturing semiconductor device, electro-optical unit, and electronic apparatus The invention provides a method of forming a high-performance thin-film at low cost using a liquid material in safety, an apparatus to form a thin-film, a method of manufacturing a semiconductor device, an electro-optical unit, and an electronic apparatus. An... | 11/28/2006 |
| 7125583 | Chemical vapor deposition chamber pre-deposition treatment for improved carbon doped oxide thickness uniformity and throughput A method for improving thickness uniformity and throughput of a carbon doped oxide deposition process is described. That method comprises removing pre-deposition steps in a deposition phase. Moreover, helium plasma is added to a pre-clean phase to eliminate the prod... | 10/24/2006 |
| 7121286 | Method for cleaning a manufacturing apparatus and a manufacturing apparatus A method for cleaning a manufacturing apparatus, includes introducing a cleaning gas including fluorine so as to flow from upstream toward an outlet port in a reaction chamber; and flowing a protective gas which reacts with the fluorine from a vicinity of the outlet... | 10/17/2006 |
| 7112546 | Method of manufacturing semiconductor devices comprising a deposition tool cleaning process having a moving plasma zone The present invention provides, in one embodiment, a method of manufacturing semiconductor devices. The method comprises transferring one or more substrate into a deposition chamber and depositing material layers on the substrate. The chamber has an interior surface... | 09/26/2006 |
| 7109114 | HDP-CVD seasoning process for high power HDP-CVD gapfil to improve particle performance A method of operating a substrate processing chamber that includes, prior to a substrate processing operation, flowing a seasoning gas comprising silane and oxygen into said chamber at a flow ratio of greater than or equal to about 1.6:1 oxygen to silane to deposit ... | 09/19/2006 |
| 7110845 | Method for managing semiconductor manufacturing equipment and system for managing semiconductor manufacturing line Manufacturing equipment performs different processes, including a first process that produces a reaction products and a second process that removes the reaction products, in a same chamber. The amount of reaction products in the chamber is monitored, and a priority ... | 09/19/2006 |
| 7097716 | Method for performing fluorocarbon chamber cleaning to eliminate fluorine memory effect A method of cleaning a plasma etching reactor is provided. The method of cleaning a plasma etching reactor includes generating one or more plasmas from oxygen gas and a hydrogen-containing gas, and exposing interior surfaces of the reactor to the plasma(s) from the ... | 08/29/2006 |
| 7044821 | Method of manufacturing a plasma display panel by decomposing impurities in exhaust gas with a catalyst Plural first exhaust pipes are disposed as exhaust paths at an upper portion of a heat treatment apparatus. Exhaust gases are discharged from the inside of the heat treatment apparatus to the respective exhaust pipes. Inlets of catalyst units are connected to outlet... | 05/16/2006 |
| 7045020 | Cleaning a component of a process chamber Process deposits formed on a component of a process chamber are cleaned. In the cleaning method, gas holes in the component are mechanically pinned to clean the process deposits therein. A ceramic portion of the component is then exposed to an acidic solution, such ... | 05/16/2006 |
