Bizarre Patents
A method of swing on a swing is disclosed, in which a user positioned on a standard swing suspended by two chains from a substantially horizontal tree branch induces side to side motion by pulling alternately on one chain and then the other.
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 8119441 | Method for manufacturing a solar cell A method for manufacturing a solar cell comprises disposing a first doping layer on a substrate, forming a first doping layer pattern by patterning the first doping layer to expose a portion of the substrate, disposing a second doping layer on the first doping layer... | 02/21/2012 |
| 8071418 | Selective emitter solar cells formed by a hybrid diffusion and ion implantation process Solar cells and methods for their manufacture are disclosed. An example method may include providing a silicon substrate and introducing dopant to one or more selective regions of the front surface of the substrate by ion implantation. The substrate may be subjected... | 12/06/2011 |
| 8039291 | Demounting of inverted metamorphic multijunction solar cells A method of forming a multijunction solar cell including an upper subcell, a middle subcell, and a lower subcell by providing a first substrate for the epitaxial growth of semiconductor material; forming a first solar subcell on the substrate having a first band gap... | 10/18/2011 |
| 7939363 | Systems and methods of intermixing cadmium sulfide layers and cadmium telluride layers for thin film photovoltaic devices A process for manufacturing a cadmium telluride based thin film photovoltaic device having an intermixed layer is provided. The process can include introducing a substrate into a deposition chamber, wherein a window layer (e.g., a cadmium sulfide layer) is on a surf... | 05/10/2011 |
| 7741146 | Demounting of inverted metamorphic multijunction solar cells A method of forming a multifunction solar cell including an upper subcell, a middle subcell, and a lower subcell by providing a first substrate for the epitaxial growth of semiconductor material; forming a first solar subcell on the substrate having a first band gap... | 06/22/2010 |
| 7691663 | CMOS image sensor having double gate insulator therein and method for manufacturing the same A method for manufacturing a CMOS image sensor includes: preparing a semiconductor substrate incorporating therein a p-type epitaxial layer by epitaxially growing up an upper portion of the semiconductor substrate; forming a pixel array in one predetermined location... | 04/06/2010 |
| 7648853 | Dual channel heterostructure Dual channel heterostructures comprising strained Si and strained Ge-containing layers are disclosed, along with methods for producing such structures. In preferred embodiments, a strain-relaxed buffer layer is deposited on a carrier substrate, a strained Si layer i... | 01/19/2010 |
| 7618839 | Pinned photodiode structure and method of formation An imager having a photodiode with a shallow doping profile with respect to the top surface of a substrate is disclosed. An imager with a graded pinned surface layer, self-aligned to a gate stack is provided. A photodiode with a shallow doping profile with respect t... | 11/17/2009 |
| 7601558 | Transparent zinc oxide electrode having a graded oxygen content A method of reactively sputtering from a metallic zinc target a transparent conductive oxide electrode of zinc oxide from a metallic zinc in a silicon photo diode device and the resultant product, such as a solar cell. The electrode in deposited on a transparent sub... | 10/13/2009 |
| 7442627 | Transparent conductive layer forming method, transparent conductive layer formed by the method, and material comprising the layer A transparent conductive layer forming method is disclosed which comprises the steps of introducing a reactive gas to a discharge space, exciting the reactive gas in a plasma state by discharge at atmospheric pressure or at approximately atmospheric pressure, and ex... | 10/28/2008 |
| 7416909 | Methods for preserving strained semiconductor substrate layers during CMOS processing Oxidation methods, which avoid consuming undesirably large amounts of surface material in Si/SiGe heterostructure-based wafers, replace various intermediate CMOS thermal oxidation steps. First, by using oxide deposition methods, arbitrarily thick oxides may be forme... | 08/26/2008 |
| 7368308 | Methods of fabricating semiconductor heterostructures Dislocation pile-ups in compositionally graded semiconductor layers are reduced or eliminated, thereby leading to increased semiconductor device yield and manufacturability. This is accomplished by introducing a semiconductor layer having a plurality of threading di... | 05/06/2008 |
| 7364960 | Methods for fabricating solid state image sensor devices having non-planar transistors Methods for fabricating CMOS image sensor devices are provided, wherein active pixel sensors are constructed with non-planar transistors having vertical gate electrodes and channels, which minimize the effects of image lag and dark current. ... | 04/29/2008 |
| 7359010 | Method for producing display device In a liquid crystal display device, a first substrate includes electrical wirings and a semiconductor integrated circuit which has TFTs and is connected electrically to the electrical wirings, and a second substrate includes a transparent conductive film on a surfac... | 04/15/2008 |
| 7259036 | Methods of forming doped and un-doped strained semiconductor materials and semiconductor films by gas-cluster-ion-beam irradiation and materials and film products Methods and apparatus are described for irradiating one or more substrate surfaces with accelerated gas clusters including strain-inducing atoms for blanket and/or localized introduction of such atoms into semiconductor substrates, with additional, optional introduc... | 08/21/2007 |
| 7256075 | Recycling of a wafer comprising a multi-layer structure after taking-off a thin layer The invention relates to a method of transferring useful layers from a donor wafer which includes a multi-layer structure on the surface of the donor wafer that has a thickness sufficient to form multiple useful layers for subsequent detachment. The layers may be fo... | 08/14/2007 |
| 7217982 | Photodiode having voltage tunable spectral response A photodetector (10) includes a substrate (12) having a surface; a first layer (14) of semiconductor material that is disposed above the surface, the first layer containing a first dopant at a first concentration for having a first type of elect... | 05/15/2007 |
| 7211458 | Methods of fabricating strained semiconductor-on-insulator field-effect transistors and related devices A method of fabricating a semiconductor device includes forming a strained first semiconductor layer on an insulating layer that is between second semiconductor layers. The strained first semiconductor layer may be epitaxially grown from the second semiconductor lay... | 05/01/2007 |
| 7208360 | Semiconductor device and method of manufacturing the same A semiconductor device is proposed which includes: a semiconductor substrate of a first conductivity type; a channel region formed at a surface of the semiconductor substrate; source and drain regions of a second conductivity type ... | 04/24/2007 |
| 7063998 | Image sensor having photo diode and method for manufacturing the same An image sensor having a photo diode with improved sensitivity, junction leakage and electron capacity, and a method for manufacturing the image sensor, are provided. The provided image sensor includes a semiconductor substrate and a p-type photo diode region formed... | 06/20/2006 |
| 7049627 | Semiconductor heterostructures and related methods Dislocation pile-ups in compositionally graded semiconductor layers are reduced or eliminated, thereby leading to increased semiconductor device yield and manufacturability. This is accomplished by introducing a semiconductor layer having a plurality of threading di... | 05/23/2006 |
| 7026185 | Methods of fabricating image sensors including local interconnections A pixel of a semiconductor-based image detector includes a photodetector, at least one switching device serially connected to the photodetector and a bypass device interposed between the photodetector and a power supply voltage. Accordingly, even though excess charg... | 04/11/2006 |
| 6991956 | Methods for transferring a thin layer from a wafer having a buffer layer A method for transferring a layer of semiconductor material from a wafer is described. The wafer includes a support substrate and an upper surface that includes a buffer layer of a material having a first lattice parameter. In an embodiment, the technique includes g... | 01/31/2006 |
| 6979589 | Silicon-based thin-film photoelectric conversion device and method of manufacturing thereof An excellent silicon-based thin-film photoelectric conversion device is manufactured simply and efficiently at a low cost. Specifically, a method of manufacturing the silicon-based thin-film photoelectric conversion device including a p-type semiconductor layer, an ... | 12/27/2005 |
| 6949809 | Light receiving element, light detector with built-in circuitry and optical pickup A light receiving element, comprising a semiconductor structure comprising at least a first conductivity type semiconductor layer, a first, second conductivity type semiconductor layer provided on the first conductivity type semiconductor layer in the semiconductor ... | 09/27/2005 |
| 6916680 | Method for fabricating image sensor A method for fabricating an image sensor comprises forming an over coat layer on an upper face of a semiconductor substrate on which a color filter layer is formed, forming a microlens on the over coat layer; covering the microlens with a protection layer, back grin... | 07/12/2005 |
| 6888984 | Amorphous silicon alloy based integrated spot-size converter A photonic device suitable for being optically coupled to at least one optical fiber having a first spot-size, the device including: at least one photonic component; and, a graded index lens optically coupled between the at least one photonic component and the at le... | 05/03/2005 |
| RE38727 | Photoelectric conversion device and method of making the same A photoelectric conversion device has a non-single-crystal semiconductor laminate member formed on a substrate having a conductive surface, and a conductive layer formed on the non-single-crystal semiconductor laminate member. The non-single-crystal semiconductor la... | 04/19/2005 |
| 6864115 | Low threading dislocation density relaxed mismatched epilayers without high temperature growth A semiconductor structure and method of processing same including a substrate, a lattice-mismatched first layer deposited on the substrate and annealed at a temperature greater than 100° C. above the deposition temperature, and a second layer deposited on the first... | 03/08/2005 |
| 6838741 | Avalanche photodiode for use in harsh environments An aspect of the present invention is directed to an avalanche photodiode (APD) device for use in oil well drilling applications in harsh, down-hole environments where shock levels are near 250 gravitational acceleration (G) and/or temperatures approach or exceed 15... | 01/04/2005 |
| 6815792 | Epitaxially grown compound semiconductor film and compound semiconductor multi-layer structure The present invention provides an epitaxially grown compound semiconductor film having a low density of crystal defects which are generated during the course of crystal growth of a compound semiconductor. The present invention also provides a compound semiconductor ... | 11/09/2004 |
| 6815730 | Nitride-based semiconductor light-emitting device A nitride-based semiconductor light-emitting device includes a GaN-based substrate and a semiconductor stacked-layer structure including a plurality of nitride-based semiconductor layers grown on the GaN-based substrate by vapor deposition. The GaN-based substrate h... | 11/09/2004 |
| 6784513 | Semiconductor light receiving device and electronic apparatus incorporating the same A semiconductor light receiving device is provided, which comprises a semiconductor substrate, a collector region, a base region, and an emitter region, an insulating film covering the surface of the collector region, the base region, and the emitter region, a first... | 08/31/2004 |
| 6692981 | Method of manufacturing a solar cell A method of manufacturing a solar cell comprises interposing an intermediate layer containing p-type or n-type impurity between a silicon thin film and a support substrate, and heating all or part of the structure thus formed to a temperature at which the... | 02/17/2004 |
| 6689633 | Optical detector with a filter layer made of porous silicon and method for the production thereof An optical silicon-based detector with a porous filter layer that has a laterally modifiable filter effect, comprising a plurality of integrated photosensitive cells. The invention also relates to a method for the production of an optical detector by crea... | 02/10/2004 |
| 6686220 | Retrograde well structure for a CMOS imager A retrograde and periphery well structure for a CMOS imager is disclosed which improves the quantum efficiency and signal-to-noise ratio of the photosensing portion imager. The retrograde well comprises a doped region with a vertically graded dopant conce... | 02/03/2004 |
| 6670213 | Method of preparing photoresponsive devices, and devices made thereby A method of preparing an efficient photoresponsive device includes the steps of providing a first electrode on a substrate, providing a layer of an organic material including a blend of at least two semiconductive polymers having different electrode affin... | 12/30/2003 |
| 6667528 | Semiconductor-on-insulator lateral p-i-n photodetector with a reflecting mirror and backside contact and method for forming the same A photodetector (and method for producing the same) includes a semiconductor substrate, a buried insulator formed on the substrate, a buried mirror formed on the buried insulator, a semiconductor-on-insulator (SOI) layer formed on the conductor, alternati... | 12/23/2003 |
| 6610557 | CMOS image sensor and a fabrication method for the same The present invention relates to a CMOS image sensor and a fabrication method thereof. The sensor has a photo diode region being extended to a lower portion of an active region in which a transfer gate, sensing gate and reset gate are formed and therefrom... | 08/26/2003 |
| 6583436 | Strain-engineered, self-assembled, semiconductor quantum dot lattices A method for growing strain-engineered, self-assembled, semiconductor quantum dots (QDs) into ordered lattices. The nucleation and positioning of QDs into lattices is achieved using a periodic sub-surface lattice built-up on a substrate, stressor layer, a... | 06/24/2003 |
