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...When G.G. Hubbard learned of his future son-in-law's invention, he called it "only a toy." His daughter was engaged to a young man named Alexander Graham Bell.
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| Number | Title | Issue Date |
| 8039290 | Method of making photovoltaic cell Methods of making a photovoltaic (PV) cell are disclosed. The methods comprise at least the steps of, providing a first component comprising a cadmium telluride (CdTe) layer comprising an interfacial region, and subjecting the first component to a functionalizing tr... | 10/18/2011 |
| 7960203 | Pore phase change material cell fabricated from recessed pillar A method of manufacturing an electrode is provided that includes providing a pillar of a first phase change material atop a conductive structure of a dielectric layer; or the inverted structure; forming an insulating material atop dielectric layer and adjacent the p... | 06/14/2011 |
| 7935564 | Self-converging bottom electrode ring A method and memory cell including self-converged bottom electrode ring. The method includes forming a step spacer, a top insulating layer, an intermediate insulating layer, and a bottom insulating layer above a substrate. The method includes forming a step spacer w... | 05/03/2011 |
| 7888164 | Programmable via structure and method of fabricating same A method of fabricating a programmable via structure is provided. The method includes providing a patterned heating material on a surface of an oxide layer. The oxide layer is located above a semiconductor substrate. A patterned dielectric material is formed having ... | 02/15/2011 |
| 7795067 | Semitransparent flexible thin film solar cells and modules A method of manufacturing partially light transparent thin film solar cells generally includes forming a solar cell structure stack and forming multiple openings through the solar cell structure stack. The solar cell structure stack includes a flexible foil substrat... | 09/14/2010 |
| 7776644 | Phase change memory cell and method and system for forming the same For fabricating a phase change memory cell, a layer of phase change material and a layer of a first electrode material are deposited. In addition, the first electrode material is patterned using an etchant including a low-reactivity halogen element such as bromine o... | 08/17/2010 |
| 7700398 | Method for fabricating an integrated device comprising a structure with a solid electrolyte Method for fabricating an integrated device, comprising the step of providing a substrate, which includes an electrode element, and a step of providing a solid electrolyte element coupled to the electrode element. The solid electrolyte element is provided in a cryst... | 04/20/2010 |
| 7638357 | Programmable resistance memory devices and systems using the same and methods of forming the same A programmable resistance memory element and method of forming the same. The memory element includes a first electrode, a dielectric layer over the first electrode and a second electrode over the dielectric layer. The dielectric layer and the second electrode each h... | 12/29/2009 |
| 7632701 | Thin film solar cells by selenization sulfurization using diethyl selenium as a selenium precursor A method of forming a CIGSS absorber layer includes the steps of providing a metal precursor, and selenizing the metal precursor using diethyl selenium to form a selenized metal precursor layer (CIGSS absorber layer). A high efficiency solar cell includes a CIGSS ab... | 12/15/2009 |
| 7550313 | Method for delineation of phase change memory (PCM) cells separated by PCM and upper electrode regions modified to have high film resistivity A method for forming a Phase Change Material (PCM) cell structure comprises forming both a lower electrode composed of a PCM layer and a conductive encapsulating upper electrode layer. The PCM is protected from damage by a conductive encapsulating layer. Electrical ... | 06/23/2009 |
| 7355185 | Semiconductor radiation detector and process for producing the same A semiconductor radiation detector 10 comprises a Si substrate 11 of an N-ype of low resistance, an arsenic coating layer 12 formed on the Si substrate, and a CdTe growth layer 13 of a P-type of high resistance laminated and formed thereo... | 04/08/2008 |
| 7323356 | LnCuO(S,Se,Te)monocrystalline thin film, its manufacturing method, and optical device or electronic device using the monocrystalline thin film Disclosed is a method of producing an LnCuOX single-crystal thin film (wherein Ln is at least one selected from the group consisting of lanthanide elements and yttrium, and X is at least one selected from the group consisting of S, Se and Te), which comprises the st... | 01/29/2008 |
| 7294527 | Method of forming a memory cell The invention relates to the fabrication of a resistance variable material cell or programmable metallization cell. The processes described herein can form a metal-rich metal chalcogenide, such as, for example, silver-rich silver selenide. Advantageously, the proces... | 11/13/2007 |
| 7161225 | Reducing shunts in memories with phase-change material A memory cell may include a phase-change material. Adhesion between the phase-change material and a dielectric or other substrate may be enhanced by using an adhesion enhancing interfacial layer. Conduction past the phase-change material through the interfacial laye... | 01/09/2007 |
| 7112975 | Advanced probe card and method of fabricating same In one embodiment, an anti-wafer structure includes a silicon on insulator (SOI) layer and a plurality of probe dice formed on the SOI layer. Each of the probe die may have a pad layout corresponding to a pad layout of a die on a wafer under test. A plurality of hol... | 09/26/2006 |
| 7087454 | Fabrication of single polarity programmable resistance structure A resistance variable memory element with improved data retention and switching characteristics switched between resistance memory states upon the application of write pulses having the same polarity. The resistance variable memory element can be provided having at ... | 08/08/2006 |
| 7053294 | Thin-film solar cell fabricated on a flexible metallic substrate A thin-film solar cell (10) is provided. The thin-film solar cell (10) comprises a flexible metallic substrate (12) having a first surface and a second surface. A back metal contact layer (16) is deposited on the first surface of the flex... | 05/30/2006 |
| 6913943 | Photovoltaic device This invention is a layered thin film semiconductor device comprising a first transparent layer; a thin, second transparent layer having a conductivity less than the first transparent layer; an n-type layer; and a p-type layer comprising one or more IIB and VIA elem... | 07/05/2005 |
| 6861267 | Reducing shunts in memories with phase-change material A memory cell may include a phase-change material. Adhesion between the phase-change material and a dielectric or other substrate may be enhanced by using an adhesion enhancing interfacial layer. Conduction past the phase-change material through the interfacial laye... | 03/01/2005 |
| 6825409 | Method for producing solar cells and thin-film solar cell A thin-film solar cell and a method of producing a thin-film solar cell. The thin-film solar cell includes an absorber layer and at least one transparent window electrode. The window electrode is produced with a first metal-based thin-film, which receives an anti-re... | 11/30/2004 |
| 6815250 | Method for manufacturing infrared detector using diffusion of hydrogen plasma A method for manufacturing an infrared detector forms a p-n junction by forming a low concentration p type HgCdTe layer, forming a diffusion preventing layer for exposing some upper part of the low concentration p type HgCdTe layer, and by forming a low concentratio... | 11/09/2004 |
| 6800504 | Integrated circuit device and fabrication using metal-doped chalcogenide materials Methods of forming metal-doped chalcogenide layers and devices containing such doped chalcogenide layers include using a plasma to induce diffusion of metal into a chalcogenide layer concurrently with metal deposition. The plasma contains at least one noble gas of l... | 10/05/2004 |
| 6784018 | Method of forming chalcogenide comprising devices and method of forming a programmable memory cell of memory circuitry A first conductive electrode material is formed on a substrate. Chalcogenide comprising material is formed thereover. The chalcogenide material comprises AxSey. A silver comprising layer is formed over the chalcogenide material. The silver is i... | 08/31/2004 |
| 6709958 | Integrated circuit device and fabrication using metal-doped chalcogenide materials Methods of forming metal-doped chalcogenide layers and devices containing such doped chalcogenide layers include using a plasma to induce diffusion of metal into a chalcogenide layer concurrently with metal deposition. The plasma contains at least one noble gas of l... | 03/23/2004 |
| 6548751 | Thin film flexible solar cell A thin-film flexible solar cell built on a plastic substrate comprises a cadmium telluride p-type layer and a cadmium sulfide n-type layer sputter deposited onto a plastic substrate at a temperature sufficiently low to avoid damaging or melting the plasti... | 04/15/2003 |
| 6465273 | Method of making ZnSe based light emitting device with in layer using vibration and pressure A light emitting device includes an LED chip fixed to an electrode body via a conductive layer of In or an In alloy. The conductive layer is in ohmic-contact with an n-type ZnSe crystal substrate of the LED chip. To make the device, In or an In alloy is m... | 10/15/2002 |
| 6362483 | Visible-blind UV detectors Visible-blind UV detectors are disclosed comprising an active layer of ZnSTe alloy. The Te composition can be varied to provide good lattice matching depending on the nature of the substrate (eg Si, GaP or GaAs) and a novel structure is provided to give h... | 03/26/2002 |
| 6281035 | Ion-beam treatment to prepare surfaces of p-CdTe films A method of making a low-resistance electrical contact between a p-CdTe layer and outer contact layers by ion beam processing comprising: a) placing a CdS/CdTe device into a chamber and evacuating the chamber; b) orienting the p-CdTe side of the CdS/CdTe layer so t... | 08/28/2001 |
| 6046068 | Forming contacts on semiconductor substrates radiation detectors and imaging devices A method, suitable for forming metal contacts on a semiconductor substrate at positions for defining radiation detector cells, includes the steps of forming one or more layers of material on a surface of the substrate with openings to the substrate surfac... | 04/04/2000 |
| 6036822 | Thin-film solar cell manufacturing apparatus and manufacturing method A base is provided with a gas outlet pipe and a gas inlet pipe. A bell jar is placed on top of the base with an O-ring interposed between them. Thin-film solar cells and a Se powder are placed in a recess formed in a lower heating jig, and the lower heati... | 03/14/2000 |
| 6036771 | Method of manufacturing optical semiconductor device In a method of manufacturing an optical semiconductor device having a semiconductor substrate, an optical waveguide formed by a semiconductor layer is formed on the semiconductor substrate by the use of the selective metal-organic vapor phase epitaxy incl... | 03/14/2000 |
| 6023020 | Solar cell and method for manufacturing the same A solar cell utilizing a chalcopyrite semiconductor and reducing the density of defects on the junction interface of pn junctions is provided. This solar cell includes a substrate, a back electrode formed on the substrate, a p-type chalcopyrite semiconduc... | 02/08/2000 |
| 6001669 | Method for producing II-VI compound semiconductor epitaxial layers having low defects Epitaxial layers of II-VI semiconductor compounds having low incidence of lattice defects such as stacking faults are produced by first depositing a fraction of a monolayer of the cation species of the compound, followed by depositing a thin layer of the ... | 12/14/1999 |
| 5994163 | Method of manufacturing thin-film solar cells A method of manufacturing thin-film solar cells that include a layer of copper indium selenide (CuInSe2) that is applied in one manufacturing step onto a substrate that includes a metal layer that defines an electrical back contact layer of the... | 11/30/1999 |
| 5989933 | Method of forming a cadmium telluride/silicon structure In one embodiment, a semiconductor structure is disclosed. The structure includes both a silicon and a cadmium telluride layer. Each may have a (100) lattice orientation. A plurality of buffer layers are disposed between the silicon layer and the cadmium ... | 11/23/1999 |
| 5986205 | Stainless steel sheet and a substrate for a solar cell and manufacturing method thereof The stainless steel sheet useful as a substrate for non-single crystalline semiconductor solar cells has minute ripples with undulations along a rolling direction, and its surface roughness is controlled in the range of Rz 0.3-1.4 μm and R | 11/16/1999 |
| 5466613 | Method of manufacturing a camera device A camera device having favorable multiplication characteristics (quantum efficiency) as well as improved sensitivity in a visible light region (especially the region on the red side) and a method of manufacturing the same are provided. The camera device i... | 11/14/1995 |
| 4520010 | Process for modifying the electrical properties of selenium, and selenium alloys Disclosed is a process for improving the electron transporting properties of selenium, or selenium alloys, by (1) providing a source of selenium, or selenium alloy, (2) treating the selenium, or selenium alloy with hydrazine contained in an organic solven... | 05/28/1985 |
| 4040985 | Photoconductive films A photoconductive film comprises a first region containing Se in which Te and an element capable of forming deep levels in Se are added at concentrations lower than 10 atomic % inclusive on average, respectively, a second region disposed on the first regi... | 08/09/1977 |
| 4007473 | Target structures for use in photoconductive image pickup tubes and method of manufacturing the same In a target structure for use in a photoconductive image pickup tube, a P-type photoconductive film is deposited on an N-type transparent conductive film which is deposited on a transparent substrate. The P-type photosensitive film comprises first and sec... | 02/08/1977 |
