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Class 438/81 - Specified shape junction barrier (e.g., V-grooved junction, etc.)


Subclass of Class 438 - Semiconductor device manufacturing: process
Definition: Process wherein the junction barrier interface (i.e., between
No. of patents: 41
Last issue date: 10/20/2009


1    
NumberTitleIssue Date
7605017Method of manufacturing a semiconductor device and products made thereby
Methods of manufacturing a semiconductor device and resulting products. The semiconductor device includes a semiconductor substrate, a hetero semiconductor region hetero-adjoined with the semiconductor substrate, a gate insulation layer contacting the semiconductor ...
10/20/2009
7238968Semiconductor device and method of making the same
The present invention presents a semiconductor device (10) which is adapted to a solar cell, and in which a semiconductor element (1) is produced by forming one flat surface (2) on a spherical or substantially spherical silicon single crystal (
07/03/2007
7217883Manufacturing a solar cell with backside contacts
A solar cell involving a silicon wafer having a basic doping, a light-receiving front side and a backside, which is provided with an interdigital semiconductor pattern, which interdigital semiconductor pattern has a first pattern of at least one first diffusion zone...
05/15/2007
7132297Multi-layer inductor formed in a semiconductor substrate and having a core of ferromagnetic material
A thin-film multilayer high-Q inductor having a ferromagnetic core and spanning at least three metal layers is formed by forming a plurality of parallel first metal runners on the semiconductor substrate. A plurality of first and second vertical conductive vias are ...
11/07/2006
7064418Method and structure of diode
A method and a structure of a diode are provided. The diode is used in an electrostatic discharge protection circuit using TFT (Thin Film Transistor) fabrication technology. A semiconductor layer is formed on a substrate. A first region of a first carrier concentrat...
06/20/2006
7057255Photodiode, optical receiver device including the same, and method of making the photodiode
A photodiode (PD chip) includes a substrate, an absorption layer, a p-n junction in the absorption layer, a passivation film for protecting the end of the p-n junction, a p-electrode, and an n-electrode. The passivation film is covered with a protective layer compos...
06/06/2006
7049167CMOS image sensor having test pattern therein and method for manufacturing the same
The method for manufacturing a test pattern for use in a CMOS image sensor is employed to measure a sheet resistivity of each ion implantation region, respectively. The method includes steps of: forming an FOX area on a semiconductor substrate so as to define an act...
05/23/2006
7041525Three-dimensional island pixel photo-sensor
A method and structure for a photodiode array comprising a plurality of photodiode cores, light sensing sidewalls along an exterior of the cores, logic circuitry above the cores, trenches separating the cores, and a transparent material in the trenches is disclosed....
05/09/2006
7005313Semiconductor dynamic sensor, and methods of transport and collet suction for the same
A semiconductor dynamic sensor has a displacement portion, which is composed of a movable electrode and first and second fixed electrodes, formed in a semiconductor substrate. The movable electrode is displaced in response to applied acceleration, so that capacitanc...
02/28/2006
6864414Apparatus and method for integral bypass diode in solar cells
A solar cell having a multijunction solar cell structure with a bypass diode is disclosed. The bypass diode provides a reverse bias protection for the multijunction solar cell structure. In one embodiment, the multifunction solar cell structure includes a substrate,...
03/08/2005
6815347Method of forming a reflective electrode
The present invention provides a method of forming a TFT and a reflective electrode having recesses or projections with reduced manufacturing cost and a reduced number of manufacturing steps, and provides a liquid crystal display device to which the method is applie...
11/09/2004
6815792Epitaxially grown compound semiconductor film and compound semiconductor multi-layer structure
The present invention provides an epitaxially grown compound semiconductor film having a low density of crystal defects which are generated during the course of crystal growth of a compound semiconductor. The present invention also provides a compound semiconductor ...
11/09/2004
6706550Photodiode having a plurality of PN injections and image sensor having the same
The present invention relates to a pinned photodiode for an image sensor and a method for manufacturing the same; and, more particularly, to a pinned photodiode of an image sensor fabricated by CMOS processes and a manufacturing method thereof The pinned photodiode,...
03/16/2004
6670657Integrated circuit having photodiode device and associated fabrication process
An integrated circuit is provided that includes a substrate incorporating a semiconductor photodiode device having a p-n junction. The photodiode device includes at least one capacitive trench buried in the substrate and connected in parallel with the jun...
12/30/2003
6441297Solar cell arrangement
The invention relates to a solar cell arrangement consisting of series-connected solar subcells. Said solar subcells consist of a semiconductor wafer which forms a common base material for all of the solar subcells and wherein a number of recesses are pro...
08/27/2002
6429039Semiconductor device and method of manufacturing the same
A gate oxide film 18 and a gate electrode 20 are formed on a surface of a P-type substrate 14. A concave portion 42 is provided in a region of the P-type substrate 14, the region being contiguous to the gate electrode 20. On the P-type substrate 14, an N-...
08/06/2002
6404031Transparent semiconductor light-receiving element and manufacturing method thereof
If a semiconductor device employing semiconductor light-receiving elements is disposed on a single optical axis, laser light which is incident on these light-receiving elements is interrupted by the semiconductor device, and it will be impossible to confi...
06/11/2002
6384317Solar cell and process of manufacturing the same
The solar cell in the semiconductor substrate includes at least a radiation receiving front surface and a second surface. The substrate includes a first region of one type of conductivity and a second region of the opposite conductivity type with at least...
05/07/2002
6294822Spheric semiconductor device, method for manufacturing the same, and spheric semiconductor device material
The present invention discloses a small spherical solar cell SS (spherical semiconductor) and the manufacturing method for the same, comprising: a spherical core 1; a reflective film 2 formed on the surface of core 1; a semiconductor thin film layer (p ty...
09/25/2001
6239354Electrical isolation of component cells in monolithically interconnected modules
A monolithically interconnected photovoltaic module having cells which are electrically connected which comprises a substrate, a plurality of cells formed over the substrate, each cell including a primary absorber layer having a light receiving surface an...
05/29/2001
6069394Semiconductor substrate, semiconductor device and method of manufacturing the same
A sapphire substrate, a buffer layer of undoped GaN and a compound semiconductor crystal layer successively formed on the sapphire substrate together form a substrate of a light emitting diode. A first cladding layer of n-type GaN, an active layer of undo...
05/30/2000
6052261Method for manufacturing magnetoresistance head
A method for manufacturing a magnetoresistance head of the present invention comprises the steps of forming an organic film on a multilayered film constituting a magnetoresistance device, forming an upper film formed of resist or inorganic film on the org...
04/18/2000
5877520Trench lateral overflow drain antiblooming structure for virtual phase charge coupled devices with virtual gate element
The lateral overflow drain for charge coupled devices includes: a semiconductor region 70 of a first conductivity type having a trench 92; a drain region 24 of a second conductivity type below the trench 92; a gate 20 in the trench 92 overlying and separa...
03/02/1999
5523610Photodiode array and method for manufacturing the same
A photodiode array is provided which includes a cell comprised of at least a substrate, an insulating film formed on the substrate, a semiconductor layer containing an impurity of first conductivity type and provided on the insulating film, an impurity-di...
06/04/1996
5454879Helically grown monolithic high voltage photovoltaic devices and method therefor
The invention provides for methods that include the steps of continuous liquid phase epitaxy followed by evaporation or implantation of dopant, barrier-interconnect, and additional interconnect-dopant layers to grow cylindrical helical multi-layer structu...
10/03/1995
5449626Method for manufacture of a solar cell
A solar cell (10) with at least one semiconductor substrate surface (12) is proposed, having elevated areas (24, 26, 28) on which are provided electrically conducting contacts (20) for conducting charge carriers, and which are covered at least between the...
09/12/1995
5391236Photovoltaic microarray structure and fabrication method
A photovoltaic microarray such as a solar cell array is monolithically fabricated, without a supporting substrate, by forming a network of trenches from one side of a substrate to define separate cell areas, filling the trenches with an insulative filler ...
02/21/1995
5348589Solar cell and method of forming the same
A manufacturing method and an improved structure for solar cells are described. A transparent conductive film and a photoelectric conversion layer are laminated on a flexible transparent substrate, and thereafter the laminate is divided by a first groove ...
09/20/1994
5330918Method of forming a high voltage silicon-on-sapphire photocell array
A method is provided for forming a multi-cell photovoltaic circuit on an insulating substrate, comprising the steps of: forming a photovoltaic junction between p-type and n-type layers in a silicon wafer; bonding the silicon wafer to an insulating substra...
07/19/1994
5296394Manufacturing method of GaAs metal semiconductor FET
A manufacturing method of GaAs metal semiconductor FET is disclosed. The method comprises the steps of: preparing a GaAs substrate; depositing a silicon layer on the GaAs substrate; forming a first photoresist pattern on the silicon layer by means of well...
03/22/1994
5164019Monolithic series-connected solar cells having improved cell isolation and method of making same
Series connected cells of a solar array formed in a monolithic semiconductor substrate are electrically isolated by forming grooves in a first major surface partially through the substrate between cells and then fracturing the substrate from the bottom of...
11/17/1992
5103851Solar battery and method of manufacturing the same
A solar battery characterized in the following respects of having at least one semiconductor multilayer structure (A) having at least, an electrode (a1); a semiconductor crystal (a2) of a first conductivity type formed on the electro...
04/14/1992
4933021Monolithic series-connected solar cells employing shorted p-n junctions for electrical isolation
Electrical isolation between cells in a dual metal layer contact solar cell or an interdigitated contact solar cell structure is provided by forming a plurality of p-n junctions in the semiconductor substrate of the structure between cells and shorting th...
06/12/1990
4773943Photovoltaic device and a method of producing the same
A photovoltaic device including a plurality of power generation regions arranged in alignment with one another on one side of an insulative substrate, the power generation region being composed of an amorphous semiconductor layer, a first electrode formed...
09/27/1988
4569124Method for forming thin conducting lines by ion implantation and preferential etching
A thin conducting line such as a gate pattern is defined on a semiconductor chip (10) by applying a narrow ion beam, suitably a focused-ion-beam (16) having a submicrometer thickness from a source (18) onto a thin layer (14) of an inorganic material such ...
02/11/1986
4442590Monolithic microwave integrated circuit with integral array antenna
A monolithic microwave integrated circuit including an integral array antenna. The system includes radiating elements, feed network, phasing network, active and/or passive semiconductor devices, digital logic interface circuits and a microcomputer control...
04/17/1984
4335503Method of making a high voltage V-groove solar cell
A method is provided for making a high voltage multijunction solar cell which comprises a plurality of discrete voltage generating regions, or unit cells, which are formed in a single semiconductor wafer (10) and are connected together so that the voltage...
06/22/1982
4278473Monolithic series-connected solar cell
A monolithic series-connected solar cell comprises a series of cells each having a mesa-like structure which is electrically interconnected from the top of each cell to a contact ledge formed in the base region of the adjoining cell. The individual cells ...
07/14/1981
4190852Photovoltaic semiconductor device and method of making same
A photovoltaic semiconductor device which is a horizontal multijunction series-array solar battery with a monocrystalline body and having elongate zones of aluminum doped silicon passed entirely through N-type silicon layers by Thermomigration process to ...
02/26/1980
4131984Method of making a high-intensity solid-state solar cell
A semiconductor solar cell capable of converting incident radiation to electrical energy at high efficiency includes a plurality of series-connected unit solar cells formed on a common wafer of semiconductor material. The unit solar cells each include a s...
01/02/1979
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