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| Number | Title | Issue Date |
| 8357620 | Laser annealing method and laser annealing apparatus An embodiment of the invention provides a laser annealing method, including the steps of radiating a laser beam to an amorphous film on a substrate while scanning the laser beam for the amorphous film, crystallizing the amorphous film, detecting a light quantity of ... | 01/22/2013 |
| 8236709 | Method of fabricating a device using low temperature anneal processes, a device and design structure A method of fabricating a device using a sequence of annealing processes is provided. More particularly, a logic NFET device fabricated using a low temperature anneal to eliminate dislocation defects, method of fabricating the NFET device and design structure is sho... | 08/07/2012 |
| 8138105 | Rapid thermal processing using energy transfer layers A method that is performed for heat treating a semiconductor wafer in a process chamber, as an intermediate part of an overall multi-step technique for processing the wafer, includes applying an energy transfer layer to at least a portion of the wafer, and exposing ... | 03/20/2012 |
| 8080485 | Localized temperature control during rapid thermal anneal A method of forming a semiconductor structure comprises providing a substrate and forming an insulator layer on the substrate. A first film is formed on the insulator layer. Thus, the first film can correspond to a device region of the semiconductor structure. A sec... | 12/20/2011 |
| 8076252 | Substrate processing method and substrate processing apparatus In a substrate processing method, a substrate to be processed is mounted on a mounting table in a processing chamber of a substrate processing apparatus, and while heating the substrate by a heating unit through the mounting table to a processing temperature of 700... | 12/13/2011 |
| 8017528 | Impurity-activating thermal process method and thermal process apparatus A thermal cycle includes: increasing a temperature from an initial temperature to a temperature T1 at an arbitrary rate R1 (° C./sec); holding the temperature at the temperature T1 for an arbitrary period t1 (sec); increasing the tempera... | 09/13/2011 |
| 7981816 | Impurity-activating thermal process method and thermal process apparatus An impurity-activating thermal process is performed after a target is subjected to an impurity introduction step. In this thermal process, while a spike RTA process including a holding period for holding a temperature at a predetermined temperature is performed, at ... | 07/19/2011 |
| 7863204 | Substrate processing apparatus, heating apparatus for use in the same, method of manufacturing semiconductors with those apparatuses, and heating element supporting structure A substrate treating device comprising a treatment chamber for storing and treating substrates and a heating device having a heating element and a heat insulator and heating the substrates in the treatment chamber by the heating element. The heating element is so fo... | 01/04/2011 |
| 7786025 | Activating dopants using multiple consecutive millisecond-range anneals A method of fabricating an integrated circuit includes providing a gate conductor spaced above a semiconductor substrate by a gate dielectric, a pair of dielectric spacers disposed on sidewall surfaces of the gate conductor, and source and drain regions disposed in ... | 08/31/2010 |
| 7772135 | Method for forming poly-silicon film A method for forming a poly-silicon film, using sequential lateral solidification (SLS) by laser irradiation through an optical device to pattern the laser beam and provide a periodic energy profile on the edges of transparent regions so as to widen the poly-silicon... | 08/10/2010 |
| 7629275 | Multiple-time flash anneal process A method of forming an integrated circuit is provided. The method includes performing a multiple-time flash anneal process to a wafer, wherein the multiple-time flash anneal process comprises preheating the wafer to a first preheat temperature; performing a first fl... | 12/08/2009 |
| 7592274 | Method for fabricating semiconductor element A method for fabricating a semiconductor element includes the steps of: providing a semiconductor wafer; forming an oxide layer on the semiconductor wafer; carrying out a high-temperature thermal treatment to the semiconductor wafer at least once, wherein the high-t... | 09/22/2009 |
| 7585793 | Method for applying a high temperature heat treatment to a semiconductor wafer The invention provides methods for applying high temperature treatments to semiconductor wafers that limit surface tearing-off defects and surface particle contamination. In preferred embodiments, the high temperature treatments begin at boat-in temperatures of less... | 09/08/2009 |
| 7521383 | Manufacturing method of semiconductor device A first layer (an insulating layer), a second layer (a metal layer), and a third layer (an insulating layer) are formed over a substrate. Then, a fourth layer including a semiconductor element is formed over the third layer. After applying an organic resin film cove... | 04/21/2009 |
| 7479466 | Method of heating semiconductor wafer to improve wafer flatness A method of heating-treating a semiconductor wafer is provided. In one embodiment, a first layer is formed over a first side of a substrate. A second layer is formed over the first layer and over a second side of the substrate and the wafer is then flash annealed. I... | 01/20/2009 |
| 7479465 | Transfer of stress to a layer A strained semiconductor layer is achieved by a method for transferring stress from a dielectric layer to a semiconductor layer. The method comprises providing a substrate having a semiconductor layer. A dielectric layer having a stress is formed over the semiconduc... | 01/20/2009 |
| 7439196 | Method for manufacturing pattern formed structure The main object of the present invention is to provide a method for manufacturing efficiently a pattern formed structure which has a surface having a property-varied pattern and can be used to manufacture a color filter or the like. In order to achieve the ob... | 10/21/2008 |
| 7439198 | Method for fabricating a buried metallic layer in a semiconductor body and semiconductor component having a buried metallic layer A method for fabricating a buried metallic layer at a predetermined vertical position in a semiconductor body having a first and second side includes a step of applying a metal layer to one of the first and second sides at least in sections. The method also includes... | 10/21/2008 |
| 7410355 | Method for the heat treatment of substrates A substrate undergoes a semiconductor fabrication process at different temperatures in a reactor without changing the temperature of the reactor. The substrate is held suspended by flowing gas between two heated surfaces of the reactor. Moving the two heated surface... | 08/12/2008 |
| 7402517 | Method and apparatus for selective deposition of materials to surfaces and substrates Methods are disclosed for depositing materials selectively and controllably from liquid, near-critical, and/or supercritical fluids to a substrate or surface controlling the location and/or thickness of material(s) deposited to the surface or substrate. In one exemp... | 07/22/2008 |
| 7402533 | Masking without photolithography during the formation of a semiconductor device A method for forming a semiconductor device comprises forming a dielectric layer over a semiconductor wafer substrate assembly having closely spaced regions, such as a memory transistor array, and widely spaced regions, such as a periphery. Under conditions specifie... | 07/22/2008 |
| 7402445 | Method of forming micro-structures and nano-structures Methods of forming a nano-structure for electron extraction are disclosed. One method of forming a nano-structure comprises irradiating an area on a first surface of a thermal conductive film to melt the area across the film. The film is insulated on a second surfac... | 07/22/2008 |
| 7381632 | Semiconductor thin film crystallization device and semiconductor thin film crystallization method A first laser beam is emitted from a first laser oscillator in a pulsed manner at a high repetition frequency, and converged onto a substrate by a first intermediate optical system 2 so as to form a slit-like first beam spot. A second laser beam is emitted fr... | 06/03/2008 |
| 7357963 | Apparatus and method of crystallizing amorphous silicon A sequential lateral solidification apparatus includes a laser generator for generating and emitting a laser beam; an X-Y stage movable in two orthogonal axial directions; and a mask arranged between the laser generator and the X-Y stage. The mask has a plurality of... | 04/15/2008 |
| 7358200 | Gas-assisted rapid thermal processing A system, method and apparatus for processing a semiconductor device including a processing chamber and a heating assembly positioned within the processing chamber. The heating assembly including at least a plate defining an internal cavity configured to receive gas... | 04/15/2008 |
| 7341628 | Method to reduce crystal defects particularly in group III-nitride layers and substrates Gallium Nitride layers grown as single crystals by epitaxy such as Hydride Vapor Phase Epitaxy (HVPE) contain large numbers of crystal defects such as hexagonal pits, which limit the yield and performance of opto- and electronic devices. In this method, the Gallium ... | 03/11/2008 |
| 7332448 | Manufacturing method of semiconductor device and semiconductor manufacturing device A manufacturing method of a semiconductor device, comprises; a process of heat-treating a semiconductor substrate under the ordinary pressure and in an oxidizing atmosphere; and a process of heat-treating the semiconductor substrate under the ordinary pressure and i... | 02/19/2008 |
| 7326876 | Sequential lateral solidification device A sequential lateral solidification device, for enhancing optical characteristics of the device and for preventing damage caused by an ablation of a crystallization thin film, is disclosed. The device includes a laser light source generating a laser beam, a projecti... | 02/05/2008 |
| 7326658 | Method for preparing nitrogen-doped annealed wafer and nitrogen-doped and annealed wafer The present invention provides a method for producing a nitrogen-doped annealed wafer, wherein before a wafer sliced from a silicon single crystal doped with at least nitrogen and polished is subjected to a high temperature heat treatment at 1100° C. to 1350° C. i... | 02/05/2008 |
| 7309617 | MRAM memory cell with a reference layer and method for fabricating The invention relates to a method for fabricating a reference layer for MRAM memory cells and an MRAM memory cell equipped with a reference layer of this type. A reference layer of this type comprises two magnetically coupled layers having a different Curie temperat... | 12/18/2007 |
| 7300856 | Process for detaching layers of material A process for detaching two layers of material according to a weakened zone defined between the layers. This process includes the thermal annealing of a structure that incorporates the layers, with the annealing bringing the temperature from a starting temperature t... | 11/27/2007 |
| 7294589 | Laser irradiation apparatus An object is to obtain an even energy distribution of a laser beam in one direction, thereby conducting a uniform laser annealing on a film. A laser irradiation apparatus comprising: a lens for dividing a laser beam in one direction; and an optical system for... | 11/13/2007 |
| 7294586 | Method of processing a substrate, heating apparatus, and method of forming a pattern A method of processing a substrate, comprising forming a chemically amplified resist film on a substrate, irradiating energy beams to the chemically amplified resist film to form a latent image therein, carrying out heat treatment with respect to the chemically ampl... | 11/13/2007 |
| 7282456 | Self-repair and enhancement of nanostructures by liquification under guiding conditions In accordance with the invention, the structure of a patterned nanoscale or near nanoscale device (“nanostructure”) is repaired and/or enhanced by liquifying the patterned device in the presence of appropriate guiding conditions for a period of time and then per... | 10/16/2007 |
| 7279721 | Dual wavelength thermal flux laser anneal A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 μm is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the... | 10/09/2007 |
| 7276175 | Semiconductor device fabrication method A semiconductor device fabrication method comprises (1) forming a patterned mask layer on an oxide layer of a Mn-containing perovskite type oxide; (2) heat-treating the oxide layer; and (3) patterning the oxide layer with an etching solution containing at least one ... | 10/02/2007 |
| 7255899 | Heat treatment apparatus and heat treatment method of substrate A heat diffusion plate and a heating plate are placed in a heat treatment chamber in this order. The heating plate is used for preliminarily heating a glass substrate to a temperature in a range from 200° C. to 400° C. The glass substrate thus preliminarily heated... | 08/14/2007 |
| 7254319 | Heating system comprising at least two different radiations A heating system includes a reflector having a concave section symmetrical with respect to an axis of symmetry. In addition, a first radiation system having at least a first radiation member is capable of emitting a first type of radiation and a second radiation sys... | 08/07/2007 |
| 7235427 | Method for treating substrates for microelectronics and substrates obtained by said method An embodiment of a multilayer wafer according to the invention includes a base substrate, a first layer associated with the base substrate, and a second layer on the first layer on side opposite from the base substrate in an axial direction and having a lateral edge... | 06/26/2007 |
| 7232774 | Polycrystalline silicon layer with nano-grain structure and method of manufacture A method of forming polycrystalline silicon with ultra-small grain sizes employs a differential heating of the upper and lower sides of the substrate of a CVD apparatus, in which the lower side of the substrate receives considerably more power than the upper side, p... | 06/19/2007 |
