Quotables
"Man will not fly for 50 years."
Wilbur Wright ; 1901
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 8080484 | Method for manufacturing group III nitride semiconductor layer, method for manufacturing group III nitride semiconductor light-emitting device, and group III nitride semiconductor light-emitting device, and lamp A method for manufacturing a Group III nitride semiconductor layer according to the present invention includes a sputtering step of disposing a substrate and a target containing a Group III element in a chamber, introducing a gas for formation of a plasma in the cha... | 12/20/2011 |
| 8039405 | Conductive oxide-deposited substrate and method for producing the same, and MIS laminated structure and method for producing the same A method for producing a conductive oxide-deposited substrate including depositing a conductive oxide thin film over a substrate, subjecting the conductive oxide thin film to heat treatment by irradiating with a condensed laser beam so as to be thermally changed in ... | 10/18/2011 |
| 8039406 | Method of gap-filling using amplitude modulation radiofrequency power and apparatus for the same A method of filling a gap on a substrate comprises disposing the substrate, on which the gap is formed, on a susceptor in a chamber; applying a source power to the chamber to generate plasmas into the chamber; supplying a process gas into the chamber; filling a thin... | 10/18/2011 |
| 8003551 | Surface-activation of semiconductor nanostructures for biological applications The present invention provides means and methods for producing surface-activated semiconductor nanoparticles suitable for in vitro and in vivo applications that can fluoresce in response to light excitation. Semiconductor nanostructures can be produced by generating... | 08/23/2011 |
| 7947612 | Electronic device array A method of producing an array of electronic devices, the method including the steps of: forming one or more first conductive elements of a first electronic device on a substrate and one or more second conductive elements of a second electronic device on said substr... | 05/24/2011 |
| 7939456 | Method and apparatus for uniform microwave treatment of semiconductor wafers A microwave heating system comprises a microwave applicator cavity; a microwave power supply to deliver power to the applicator cavity; a dielectric support to support a generally planar workpiece; a dielectric gas manifold to supply a controlled flow of inert gas p... | 05/10/2011 |
| 7884036 | Methods for treating substrates in preparation for subsequent processes Methods for treating a substrate in preparation for a subsequent process are presented, the method including: receiving the substrate, the substrate comprising conductive regions and dielectric regions; and applying an oxidizing agent to the substrate in a manner so... | 02/08/2011 |
| 7867925 | Method for manufacturing pattern formed structure The main object of the present invention is to provide a method for manufacturing efficiently a pattern formed structure which has a surface having a property-varied pattern and can be used to manufacture a color filter or the like. In order to achieve the object, t... | 01/11/2011 |
| 7867926 | Substrate processing apparatus and method A substrate processing apparatus is used for radiating UV rays onto a target film formed on a target surface of a substrate to perform a curing process of the target film. The apparatus includes a hot plate configured to heat the substrate to a predetermined tempera... | 01/11/2011 |
| 7855156 | Method of and apparatus for inline deposition of materials on a non-planar surface In manufacturing a semiconductor device, a first chamber is provided. An opening couples the first chamber to a first environment through which at least one substrate can pass. A first seal environmentally isolates the first chamber from the first environment. A pro... | 12/21/2010 |
| 7655579 | Method for improving heat transfer of a focus ring to a target substrate mounting device A focus ring heat transfer method improves heat transfer of a focus ring arranged in an outer peripheral portion of a mounting surface of a mounting table adapted to mount a target substrate in a chamber. The method includes steps of: disposing a heat transfer sheet... | 02/02/2010 |
| 7629274 | Method of fabricating a storage node A storage node, a method of fabricating the same, a semiconductor memory device and a method of fabricating the same is provided. The method of fabricating a storage node may include forming a lower electrode, forming an irradiated data storage layer and forming an ... | 12/08/2009 |
| 7557050 | Method of manufacturing polysilicon thin film and method of manufacturing thin film transistor having the same In a method of manufacturing a polysilicon thin film and a method of manufacturing a TFT having the thin film, a laser beam is irradiated on a portion of an amorphous silicon thin film to liquefy the portion of the amorphous silicon thin film. The amorphous silicon ... | 07/07/2009 |
| 7524777 | Method for manufacturing an isolation structure using an energy beam treatment The invention provides a method for manufacturing a semiconductor device. The method for manufacturing the semiconductor device, among others, may include forming one or more layers of material within an opening in a substrate, the opening and the one or more layers... | 04/28/2009 |
| 7524776 | Surface-activation of semiconductor nanostructures for biological applications Means and methods for producing surface-activated semiconductor nanoparticles suitable for in vitro and in vivo applications that can fluoresce in response to light excitation. Semiconductor nanostructures can be produced by generating a porous layer in semiconducto... | 04/28/2009 |
| 7514377 | Plasma generator, ozone generator, substrate processing apparatus and manufacturing method of semiconductor device To provide a generator capable of generating plasma and ozone with high efficiency and easy to handle, with a simple structure. An electrode part 10 is formed of electrodes 11 and 12 without dielectric material interposed therebetween. An arc-ex... | 04/07/2009 |
| 7482288 | Method for producing a grid cap with a locally increased dielectric constant A method for producing a semiconductor product. Semiconductor product components are formed in a semiconductor product region of the substrate. A layer made of low-k material is subsequently formed on the substrate. Electrically conductive interconnects are formed i... | 01/27/2009 |
| 7482289 | Methods and apparatus for depositing tantalum metal films to surfaces and substrates Methods and an apparatus are disclosed for depositing tantalum metal films in next-generation solvent fluids on substrates and/or deposition surfaces useful, e.g., as metal seed layers. Deposition involves low valence oxidation state metal precursors soluble in liqu... | 01/27/2009 |
| 7439197 | Method of fabricating a capacitor A method of preparing a semiconductor film on a substrate is disclosed. The method includes arranging an insulating substrate in a deposition chamber and depositing a semiconductor film onto the insulating substrate using ion beam deposition, wherein a temperature o... | 10/21/2008 |
| 7410839 | Thin film transistor and manufacturing method thereof The present invention provides a thin film transistor in which a substantial length of a channel is shortened to miniaturize a semiconductor device and a manufacturing method thereof. In addition, the present invention provides a semiconductor device which realizes ... | 08/12/2008 |
| 7396745 | Formation of ultra-shallow junctions by gas-cluster ion irradiation Method of forming one or more doped regions in a semiconductor substrate and semiconductor junctions formed thereby, using gas cluster ion beams. ... | 07/08/2008 |
| 7387946 | Method of fabricating a substrate for a planar, double-gated, transistor process A semiconductor fabrication process includes forming a sacrificial layer on a substrate of a donor wafer and implanting hydrogen ions into the substrate through the sacrificial layer to create a stress layer in the substrate. After forming the stress layer, multiple... | 06/17/2008 |
| 7381943 | Neutral particle beam processing apparatus The present invention relates to a neutral particle beam processing apparatus. More specifically, the present invention relates to a neutral particle beam processing apparatus comprising a plasma discharging space inside which processing gases are converted to plasm... | 06/03/2008 |
| 7372049 | Lithographic apparatus including a cleaning device and method for cleaning an optical element An EUV lithographic apparatus includes an EUV radiation source, an optical element and a cleaning device. The cleaning device includes a hydrogen radical source and a flow tube in communication with the hydrogen radical source. The cleaning device is configured to p... | 05/13/2008 |
| 7357963 | Apparatus and method of crystallizing amorphous silicon A sequential lateral solidification apparatus includes a laser generator for generating and emitting a laser beam; an X-Y stage movable in two orthogonal axial directions; and a mask arranged between the laser generator and the X-Y stage. The mask has a plurality of... | 04/15/2008 |
| 7358200 | Gas-assisted rapid thermal processing A system, method and apparatus for processing a semiconductor device including a processing chamber and a heating assembly positioned within the processing chamber. The heating assembly including at least a plate defining an internal cavity configured to receive gas... | 04/15/2008 |
| 7354858 | Film formation method and apparatus for semiconductor process A film formation method for a semiconductor process is arranged to form an amorphous silicon film on a target substrate by CVD in a process field within a reaction container, while supplying a first process gas containing silicon into the process field, and setting ... | 04/08/2008 |
| 7351669 | Method of forming a substantially closed void To form a substantially closed void between two structures on a substrate, a flowable liquid dielectric material is deposited to fill partially the space between the structures, and a surface is placed to bridge and substantially close the space between the structur... | 04/01/2008 |
| 7338882 | Method of fabricating nano SOI wafer and nano SOI wafer fabricated by the same A method of fabricating a nano silicon on insulator (SOI) wafer having an excellent thickness evenness without performing a chemical mechanical polishing (CMP) and a wafer fabricated by the same are provided. The provided method includes preparing a bond wafer and a... | 03/04/2008 |
| 7329956 | Dual damascene cleaning method A semiconductor structure having a pore sealed portion of a dielectric layer is provided. Exposed pores of the dielectric material are sealed using an anisotropic plasma so that pores along the bottom of the opening are sealed, and pores along sidewalls of the openi... | 02/12/2008 |
| 7314838 | Method for forming a high density dielectric film by chemical vapor deposition A method for forming a high density dielectric film by chemical vapor deposition. The method comprises: (a) a substrate is provided in a processing chamber; (b) a first gas is introduced into the processing chamber with a first pressure and adsorbed on the substrate... | 01/01/2008 |
| 7314812 | Method for reducing the effective thickness of gate oxides by nitrogen implantation and anneal A method for reducing the effective thickness of a gate oxide using nitrogen implantation and anneal subsequent to dopant implantation and activation is provided. More particularly, the present invention provides a method for fabricating semiconductor devices, for e... | 01/01/2008 |
| 7305311 | Arc detection and handling in radio frequency power applications A radio frequency power delivery system comprises an RF power generator, arc detection circuitry, and control logic responsive to the arc detection circuitry. A dynamic boundary is computed about the measured value of a parameter representative of or related to the ... | 12/04/2007 |
| 7294590 | System and method for removing charges with enhanced efficiency Method and apparatus for removing and neutralizing charges. The method includes loading a structure into a chamber. The structure includes a first surface and a plurality of charges away from the first surface. Additionally, the method includes supplying a first ion... | 11/13/2007 |
| 7288294 | Method of crystallizing amorphous silicon using nanoparticles A method of crystallizing amorphous silicon, wherein the method includes supplying nanoparticles over a surface of an amorphous silicon layer; intermittently melting nanoparticles that reach the surface of the amorphous silicon layer while supplying the nanoparticle... | 10/30/2007 |
| 7282456 | Self-repair and enhancement of nanostructures by liquification under guiding conditions In accordance with the invention, the structure of a patterned nanoscale or near nanoscale device (“nanostructure”) is repaired and/or enhanced by liquifying the patterned device in the presence of appropriate guiding conditions for a period of time and then per... | 10/16/2007 |
| 7276172 | Method for preparing a nanowire crossbar structure and use of a structure prepared by this method The present invention relates to a method for preparing a nanowire crossbar structure, comprising: (a) providing a substrate; (b) depositing thereon a composite structure comprising a nucleic acid-block copolymer having equidistant nucleic acid-catalyst binding site... | 10/02/2007 |
| 7268087 | Manufacturing method of semiconductor device In order to provide a manufacturing method of a semiconductor device which can improve the interconnection lifetime, while controlling the increase in resistance thereof, and, in addition, can raise the manufacturing stability; by applying a plasma treatment to the ... | 09/11/2007 |
| 7265038 | Method for forming a multi-layer seed layer for improved Cu ECP A copper filled damascene structure and method for forming the same the method including providing a substrate comprising a semiconductor substrate; forming an insulator layer on the substrate; forming a damascene opening through a thickness portion of the insulator... | 09/04/2007 |
| 7262142 | Semiconductor device fabrication method The semiconductor device fabrication method comprises the step of forming a first porous insulation film 38 over a semiconductor substrate 10; the step of forming a second insulation film 40 whose density is higher than that of the first porous ... | 08/28/2007 |
