Quotables
"The production of too many useful things results in too many useless people."
Karl Marx
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 8158537 | Chalcogenide absorber layers for photovoltaic applications and methods of manufacturing the same In one example embodiment, a method includes depositing one or more thin-film layers onto a substrate. More particularly, at least one of the thin-film layers comprises at least one electropositive material and at least one of the thin-film layers comprises at least... | 04/17/2012 |
| 8119546 | Array substrate, method of manufacturing the same and method of crystallizing silicon An array substrate includes a base substrate, a switching element, and a pixel electrode. The switching element is on the base substrate. The switching element includes a poly silicon pattern having at least one block. Grains are formed in each of the at least one b... | 02/21/2012 |
| 7364986 | Laser beam processing method and laser beam machine A laser beam processing method comprising the step of processing-feeding a wafer having devices which are formed in a large number of areas sectioned by streets arranged in a lattice pattern on the front surface while a laser beam capable of passing through the wafe... | 04/29/2008 |
| 7338913 | Semiconductor device, manufacturing method thereof, and electronic device A laser annealing method for obtaining a crystalline semiconductor film having a large grain size is provided. Laser light is irradiated to the top surface and the bottom surface of an amorphous semiconductor film when crystallizing the amorphous semiconductor film ... | 03/04/2008 |
| 7294454 | Waveguide fabrication methods and devices A method of writing a waveguide using an ultrashort laser beam is disclosed. The laser beam is directed to a substrate in transverse relation to a waveguide propagation axis to generate an ultrashort laser pulse focus in the substrate. A refractive index is modified... | 11/13/2007 |
| 7235427 | Method for treating substrates for microelectronics and substrates obtained by said method An embodiment of a multilayer wafer according to the invention includes a base substrate, a first layer associated with the base substrate, and a second layer on the first layer on side opposite from the base substrate in an axial direction and having a lateral edge... | 06/26/2007 |
| 7211526 | Laser based splitting method, object to be split, and semiconductor element chip A laser splitting method for splitting off a segment from an object to be split using a laser beam, includes a surface processing step of processing the object by forming a linear recessed portion in a surface of the object, the linear recessed portion being effecti... | 05/01/2007 |
| 7195993 | Methods of fabricating gallium nitride semiconductor layers by lateral growth into trenches A gallium nitride layer is laterally grown into a trench in the gallium nitride layer, to thereby form a lateral gallium nitride semiconductor layer. At least one microelectronic device may then be formed in the lateral gallium nitride semiconductor layer. Dislocati... | 03/27/2007 |
| 7151061 | Method of selective post-growth tuning of an optical bandgap of a semi-conductor heterostructure and products produced thereof A method of controlling the degree of IFVEI for post-growth tuning of an optical bandgap of a semiconductor heterostructure. The resultant layer structure may contain a semi-conductor heterostructure with one or more regions with selectively modified bandgap. Accord... | 12/19/2006 |
| 7122734 | Isoelectronic surfactant suppression of threading dislocations in metamorphic epitaxial layers A method of reducing propagation of threading dislocations into active areas of an optoelectronic device having a III–V material system includes growing a metamorphic buffer region in the presence of an isoelectronic surfactant. A first buffer layer may be lattice... | 10/17/2006 |
| 7035305 | Monolithically integrated high power laser optical device An optical device, including a monolithically integrated diode laser and semiconductor optical amplifier, that has reduced linewidth and improved side mode suppression for a given output power target. In a preferred embodiment, the diode laser is detuned from a gain... | 04/25/2006 |
| 7026256 | Method for forming flowable dielectric layer in semiconductor device The method for forming a flowable dielectric layer without micro-voids therein in a semiconductor device is employed to utilize a ultra-violet (UV) bake process. The method includes steps of: forming a plurality of patterns on a semiconductor substrate, wherein narr... | 04/11/2006 |
| 6992026 | Laser processing method and laser processing apparatus A laser beam machining method and a laser beam machining device capable of cutting a work without producing a fusing and a cracking out of a predetermined cutting line on the surface of the work, wherein a pulse laser beam is radiated on the predetermined cut line o... | 01/31/2006 |
| 6936526 | Method of disordering quantum well heterostructures A method of disordering a quantum well heterostructure, including the step of irradiating the heterostructure with a particle beam, wherein the energy of the beam is such that the beam creates a substantially constant distribution of defects within the heterostructu... | 08/30/2005 |
| 6881601 | Nitride compound semiconductor, nitride compound semiconductor light emitting device and method of manufacturing the same A nitride compound semiconductor light-emitting device having a stack of layers including an active layer for a light emitting device and a method of manufacturing the device is disclosed. The method includes the steps of growing a first layer on a substrate at a fi... | 04/19/2005 |
| 6852629 | Backside integrated circuit die surface finishing technique and tool A method for preparing a semiconductor die for analysis comprises providing a semiconductor die having a connector on one side and an opposite, backside surface to be analyzed, providing a polishing pad for polishing the backside surface of a semiconductor die, prov... | 02/08/2005 |
| 6833332 | Method for fabrication of relaxed SiGe buffer layers on silicon-on-insulators and structures containing the same A method of fabricating relaxed SiGe buffer layers with low threading dislocation densities on silicon-on-insulator (SOI) substrates is provided. The relaxed SiGe buffer layers are fabricated by the epitaxial deposition of a defect-free Stranski-Krastanov Ge or SiGe... | 12/21/2004 |
| 6753212 | Laser apparatus, laser annealing method, and manufacturing method of a semiconductor device To provide a laser apparatus and a laser annealing method with which a crystalline semiconductor film with a larger crystal grain size is obtained and which are low in their running cost. A solid state laser easy to maintenance and high in durability is used as a la... | 06/22/2004 |
| 6750158 | Method for producing a semiconductor device A first semiconductor layer is formed on a mother substrate, and the mother substrate is irradiated with irradiation light from a surface opposite to the first semiconductor layer, so that a thermally decomposed layer formed by thermally decomposing the first semico... | 06/15/2004 |
| 6741804 | Apparatus and method for rapid thermal processing An apparatus for rapid thermal processing is described and includes a cylindrical lamp array structure (13) surrounding a cylindrical process tube (16). The cylindrical process tube (16) has a lengthwise central axis (22). The cylindrical... | 05/25/2004 |
| 6730550 | Laser apparatus, laser annealing method, and manufacturing method of a semiconductor device To provide a laser apparatus and a laser annealing method with which a crystalline semiconductor film with a larger crystal grain size is obtained and which are low in their running cost. A solid state laser easy to maintenance and high in durability is used as a la... | 05/04/2004 |
| 6723590 | Method for laser-processing semiconductor device A linear laser light which has an energy and is to be scanned is irradiated to a semiconductor device formed on a substrate, and then the substrate is rotated to irradiate to the semiconductor device a linear laser light which has a higher energy than that of the ir... | 04/20/2004 |
| 6635587 | Method for producing czochralski silicon free of agglomerated self-interstitial defects A process for heat treating a silicon wafer to dissolve B-type agglomerated interstitial defects present therein. The process includes heating the silicon wafer at a temperature for a time sufficient to dissolve B-defects, the wafer being heated to said t... | 10/21/2003 |
| 6524976 | Method of heat-treating nitride compound semiconductor layer and method of producing semiconductor device A method of heat-treating a nitride compound semiconductor layer, comprising heating a nitride compound semiconductor layer doped with a p-type impurity at a temperature that is at least 200° C. but less than 400° C. for at least 100 minutes.... | 02/25/2003 |
| 6524662 | Method of crystallizing amorphous silicon layer and crystallizing apparatus thereof The present invention is related to a method of crystallizing an amorphous silicon layer and a crystallizing apparatus thereof which crystallize an amorphous silicon layer using of electric fields and plasma. The present invention includes the steps of de... | 02/25/2003 |
| 6486046 | Method of forming polycrystalline semiconductor film It is possible to prevent lowering in productivity of thin-film transistors with no decrease in performance of the transistors. Provided are depositing an amorphous semiconductor film on a substrate, a first irradiating the amorphous semiconductor film wi... | 11/26/2002 |
| 6261931 | High quality, semi-insulating gallium nitride and method and system for forming same A method for growing high-quality gallium nitride over a substrate is disclosed. The method comprises growing first layer with a high dislocation density over the substrate, a second layer having a high number of point defects and a reduced dislocation de... | 07/17/2001 |
| 6083801 | Manufacturing method of semiconductor and manufacturing method of semiconductor device The nickel element is provided selectively, i.e., adjacent to part of the surface of an amorphous silicon film in a long and narrow opening. The amorphous silicon film is irradiated with linear infrared light beams emitted from respective linear infrared ... | 07/04/2000 |
| 5817179 | GaAs anneal boat design and method for use An improved gallium arsenide anneal boat and method for annealing comprises a slot structure for holding a wafer-stack of first and second GaAs wafers and a silicon wafer in the slot structure prior to annealing. The silicon wafer is tightly held in a cen... | 10/06/1998 |
| 5714403 | Process for producing a matrix of "all optical" vertically-structured quantum well components This invention relates to a process for producing a matrix of "all optical" vertically-structured quantum well components. This process consists in the encapsulation of a half-structure constituted by a lower mirror (2) and an active zone (3) partially covered... | 02/03/1998 |
| 5454902 | Production of clean, well-ordered CdTe surfaces using laser ablation Chemically-etched and or sputtered CdTe surfaces are exposed to UV excimer laser radiation at a fluence ranging from about 15 to 75 mJ/cm2, followed by either a low temperature ( | 10/03/1995 |
| 5395793 | Method of bandgap tuning of semiconductor quantum well structures A method of selectively tuning the bandedge of a semiconductor heterostructure includes repeatedly forming a disordered region that is spatially separated from a quantum well active region and subsequently annealing the heterostructure each time after the... | 03/07/1995 |
| 5376583 | Method for producing P-type impurity induced layer disordering P-type impurity induced layer disordering (IILD) in compound semiconductor structures or multilayer semiconductor material structures is produced by providing a source of a disordering agent during annealing multiple layers of III-V semiconductor material... | 12/27/1994 |
| 5238868 | Bandgap tuning of semiconductor quantum well structures A method of selectively tuning the bandedge of a semi-conductor heterostructure includes forming a disordered region which is spatially separated from a quantum well active region, and subsequently annealing the heterostructure so that vacancies/defects i... | 08/24/1993 |
| 5182229 | Method for diffusing an n type impurity from a solid phase source into a III-V compound semiconductor A method for diffusing n type impurities from a solid phase source into a III-V compound semiconductor includes depositing an amorphous or polycrystalline selenium or sulfur film on the III-V compound semiconductor and diffusing selenium or sulfur from th... | 01/26/1993 |
| 4990466 | Method for fabricating index-guided semiconductor laser A method of altering a refractive index, as for an optical waveguide, as in a buried heterostructure laser, by inducing disordering in a region of a semiconducotr body comprises exposing a surface portion of the semiconductor body to plasma etching, coati... | 02/05/1991 |
| 4916088 | Method of making a low dislocation density semiconductor device A low dislocation density semiconductor device includes a first semiconductor layer of a III-V or II-VI semiconductor compound and alloying atoms on a non-metal substrate. The semiconductor compound usually has a large dislocation density. A predetermined... | 04/10/1990 |
| 4879256 | Method of controlling the order-disorder state in a semiconductor device An ordered-disordered transition is observed in semiconductor alloys which enables either the ordered or disordered structure to be produced.... | 11/07/1989 |
| 4771010 | Energy beam induced layer disordering (EBILD) A novel energy beam induced layer disordering (EBILD) process is used to (a) locally melt in a scanned pattern regions of a solid state semiconductor heterostructure to produce an alloy of intermediate composition having different optical properties and/o... | 09/13/1988 |
| 4731338 | Method for selective intermixing of layered structures composed of thin solid films A multilayer structure formed of two or more separate layers of different materials can be selectively intermixed so as to become compositionally transmuted, such that the distinction between the different original materials is lost, at least partially. T... | 03/15/1988 |
