Class 438/795 - RADIATION OR ENERGY TREATMENT MODIFYING PROPERTIES OF SEMICONDUCTOR REGION OF SUBSTRATE (E.G., THERMAL, CORPUSCULAR, ELECTROMAGNETIC, ETC.)

Subclass of Class 438 - Semiconductor device manufacturing: process
Definition: Process of radiating a semiconductor substrate with a form
No. of patents: 1065
Last issue date: 05/29/2012

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Number	Title	Issue Date
8187983	Methods for fabricating semiconductor components using thinning and back side laser processing A method for fabricating semiconductor components includes the steps of providing a semiconductor substrate having a circuit side, a back side and integrated circuits and circuitry on the circuit side; thinning the substrate from the back side to a selected thicknes...	05/29/2012
8153538	Process for annealing semiconductor wafers with flat dopant depth profiles A process is disclosed for annealing a single crystal silicon wafer having a front surface and a back surface, and an oxide layer disposed on the front surface of the wafer extending over substantially all of the radial width. The process includes annealing the wafe...	04/10/2012
8097543	Apparatus and method of aligning and positioning a cold substrate on a hot surface Embodiments of the invention contemplate a method, apparatus and system that are used to support and position a substrate on a surface that is at a different temperature than the initial, or incoming, substrate temperature. Embodiments of the invention may also incl...	01/17/2012
8084374	Tuning of photo-absorption materials through use of magnetic fields The disclosure relates to using magnetic fields for the purposes of modifying the absorption characteristics of materials, such as semiconductor materials, to both tune the materials to specific wavelengths and to enhance the absorption of the materials by concentra...	12/27/2011
8062984	Laser ablation of electronic devices A method of fabricating an electronic device, the device including a plurality of layers on a substrate, the layers including an upper conductive layer and at least one patterned underlying layer between said conductive layer and said substrate. The method includes ...	11/22/2011
8058187	Trap charge equalizing method and threshold voltage distribution reducing method A method reduces a threshold voltage distribution in transistors of a semiconductor memory device, where each transistor includes a nitride liner. The method includes injecting electrons into a charge trap inside and outside the nitride liner of the transistors, and...	11/15/2011
8058186	Components for substrate processing apparatus and manufacturing method thereof A focus ring is shaped by cutting off a silicon carbide body formed by a sintering method or a CVD method. The shaped focus ring is exposed to a plasma generated from at least one of a carbon tetra fluoride gas and an oxygen gas for producing impurities, and the imp...	11/15/2011
8030224	Manufacturing method of semiconductor device, semiconductor device, communication apparatus, and semiconductor laser A method of manufacturing a semiconductor device including a semiconductor layer and a dielectric layer deposited on the semiconductor layer, including: forming the semiconductor layer; performing a surface treatment for removing a residual carbon compound, on a sur...	10/04/2011
8030225	Heat treatment method for preventing substrate deformation A heat treatment method which can prevent heat deformation of a substrate caused during a heat treatment process on the substrate with a thin film formed on its surface is provided. The heat treatment method in accordance with the present invention includes (a) stac...	10/04/2011
8026187	Method of forming silicon oxide film and method of production of semiconductor memory device using this method To form a good quality silicon oxide film provided with both a superior Qbd characteristic and Rd characteristic, a wafer W is loaded into a plasma treatment apparatus where the surface of a silicon layer 501 of the wafer W is treated by plasma oxidation to f...	09/27/2011
8021993	Method of carrying out an exposure process for a liquid crystal display device An apparatus for manufacturing a liquid crystal display device is disclosed. A first robot arm at a loading side of the thru-conveyor receives a substrate coated with photoresist and conveys the substrate to a thru-conveyor. A softbake hot plate (SHP) at the unloadi...	09/20/2011
8012888	Substrate processing apparatus and semiconductor device manufacturing method Provided is a substrate processing apparatus comprising: a process chamber for processing a substrate; a heater for heating an interior of the process chamber; a holder for sustaining the substrate in the process chamber; and a substrate transfer plate for transferr...	09/06/2011
8003550	Method for revealing emergent dislocations in a germanium-base crystalline element The invention relates to a method for detecting defects, more particularly emergent dislocations of an element having at least one crystalline germanium-base superficial layer. The method comprises an annealing step of the element in an atmosphere having a base that...	08/23/2011
7989366	Dopant activation in doped semiconductor substrates Methods are disclosed for activating dopants in a doped semiconductor substrate. A carbon precursor is flowed into a substrate processing chamber within which the doped semiconductor substrate is disposed. A plasma is formed from the carbon precursor in the substrat...	08/02/2011
7977258	Method and system for thermally processing a plurality of wafer-shaped objects Process and system for processing wafer-shaped objects, such as semiconductor wafers is disclosed. In accordance with the present disclosure, a multiple of two wafers are processed in a thermal processing chamber. The thermal processing chamber is in communication w...	07/12/2011
7968473	Low temperature process for depositing a high extinction coefficient non-peeling optical absorber for a scanning laser surface anneal of implanted dopants A plasma enhanced physical vapor deposition process deposits an amorphous carbon layer on an ion-implanted wafer for use in dynamic surface annealing of the wafer with an intense line beam of a laser wavelength. The deposition process is carried out at a wafer tempe...	06/28/2011
7955995	Nonvolatile semiconductor memory device and manufacturing method thereof, semiconductor device and manufacturing method thereof, and manufacturing method of insulating film An object is to provide a technique to manufacture an insulating film having excellent film characteristics. In particular, an object is to provide a technique to manufacture a dense insulating film with a high withstand voltage. Moreover, an object is to provide a ...	06/07/2011
7943533	Method for surface modification A method for surface modification is disclosed. The method includes the step of irradiating a material with ultrashort pulse laser light to form a modified region including an amorphous region and/or a strain region on a surface of the material. ...	05/17/2011
7943534	Semiconductor device manufacturing method and semiconductor device manufacturing system A semiconductor device manufacturing method and a semiconductor device manufacturing system for irradiating a first laser light (50) and a second laser light (52) with a wavelength different from that of the first laser light to a substrate (46)...	05/17/2011
7928021	System for and method of microwave annealing semiconductor material A system for and method of processing, i.e., annealing semiconductor materials. By controlling the time, frequency, variance of frequency, microwave power density, wafer boundary conditions, ambient conditions, and temperatures (including ramp rates), it is possible...	04/19/2011
7910499	Autofocus for high power laser diode based annealing system Apparatus for thermally processing a substrate includes a source of laser radiation comprising a plurality diode lasers arranged along a slow axis, optics directing the laser radiation from the source to the substrate, and an array of photodetectors arranged along a...	03/22/2011
7906443	Controlling oxygen precipitates in silicon wafers using infrared irradiation and heating A wafer processing method is provided that includes the steps of heating a silicon wafer containing oxygen and irradiating an infrared ray having a wavelength within a range of 7-25 μm on the silicon wafer, and controlling formation of oxygen precipitates within th...	03/15/2011
7902090	Method of forming a layer on a semiconductor substrate In a method of forming a thin layer for a semiconductor device through an ALD process and a CVD process in the same chamber, a semiconductor substrate is introduced into a processing chamber, and an interval between a showerhead and the substrate is adjusted to a fi...	03/08/2011
7902091	Cleaving of substrates An improved process of substrate cleaving and a device to perform the cleaving are disclosed. In the traditional cleaving process, a layer of microbubbles is created within a substrate through the implantation of ions of a gaseous species, such as hydrogen or helium...	03/08/2011
7897523	Substrate heating apparatus, heating method, and semiconductor device manufacturing method A substrate heating apparatus having a conductive heater which heats a substrate includes a filament arranged in the conductive heater and connected to a filament power supply to generate thermoelectrons, and an acceleration power supply which accelerates the thermo...	03/01/2011
7897524	Manufacturing method for semiconductor device and manufacturing apparatus for semiconductor device A manufacturing method for a semiconductor device including: determining pattern dependency of a radiation factor of an element forming surface of one wafer having a predetermined pattern formed on the wafer; determining a heating surface of the wafer, based on the ...	03/01/2011
7897522	Method and system for improving particle beam lithography A method for particle beam lithography, such as electron beam (EB) lithography, includes forming a plurality of cell patterns on a stencil mask and shaping one or more of the cell patterns with a polygonal-shaped contour. A first polygonal-shaped cell pattern is exp...	03/01/2011
7892986	Ashing method and apparatus therefor An ashing method of a target substrate is applied after plasma-etching a part of a low-k film by using a patterned resist film as a mask in a vacuum processing chamber. The method includes a process of removing the resist film in the vacuum processing chamber, and a...	02/22/2011
7879742	Laser annealing method wherein reflected beams are minimized It is an object of the present invention to provide a laser irradiation technique which can keep the stability of the laser oscillator high and which can perform laser process homogeneously by avoiding the adverse effect due to the return light reflected on an irrad...	02/01/2011
7879741	Laser thermal annealing of lightly doped silicon substrates Apparatus and method for performing laser thermal annealing (LTA) of a substrate using an annealing radiation beam that is not substantially absorbed in the substrate at room temperature. The method takes advantage of the fact that the absorption of long wavelength ...	02/01/2011
7871943	Method of making transistor gates with controlled work function Embodiments of the invention provide methods for making an integrated circuit comprising providing a substrate, forming a structured layer stack on the substrate comprising a dielectric layer located on the substrate and an oxide-free metallic layer located on the d...	01/18/2011
7867924	Methods of reducing impurity concentration in isolating films in semiconductor devices A method of fabricating a semiconductor device includes forming a lower device on a lower semiconductor substrate, and forming an interlayer insulating film on the lower device. An upper semiconductor substrate is formed on the interlayer insulating film such that t...	01/11/2011
7858537	Plasma processing method and apparatus With evacuation of interior of a vacuum chamber halted and with gas supply into the vacuum chamber halted, in a state that a mixed gas of helium gas and diborane gas is sealed in the vacuum chamber, a plasma is generated in a vacuum vessel and simultaneously a high-...	12/28/2010
7855155	Process for producing semiconductor device using optical absorption layer An optical absorption layer comprised of a substance having a band gap energy smaller than that of GaN is formed on an implanted region formed in a pGaN layer as a ground layer. There is performed an annealing step from an upper surface of a substrate with predeterm...	12/21/2010
7846851	Method and apparatus for a two-step resist soft bake to prevent ILD outgassing during semiconductor processing A semiconductor wafer having no photoresist craters at the completion of a two-step post-apply resist bake (soft bake) in the fabrication of an integrated circuit. A process and method for soft baking the semiconductor wafer so that photoresist layers are free of su...	12/07/2010
7829475	Baking method of quartz products, computer program and storage medium The present invention relates to control of copper contamination to semiconductor substrates upon operation of a heat treatment apparatus which is a semiconductor manufacturing apparatus and which is constructed with quartz products having been contaminated with cop...	11/09/2010
7816284	Method of forming pattern on group III nitride semiconductor substrate and method of manufacturing group III nitride semiconductor light emitting device There is provided a method of forming a pattern on a group III nitride semiconductor substrate. A method of forming a pattern on a group III nitride semiconductor substrate according to an aspect of the invention may include: irradiating a laser beam onto at least o...	10/19/2010
7799707	Method of forming gated, self-aligned micro-structures and nano structures Methods of forming a gated, self-aligned nano-structures for electron extraction are disclosed. One method of forming the nano-structure comprises irradiating a first surface of a thermally conductive laminate to melt an area across the first surface of the laminate...	09/21/2010
7790636	Simultaneous irradiation of a substrate by multiple radiation sources A method for configuring J electromagnetic radiation sources (J≧2) to simultaneously irradiate a substrate. Each source has a different function of wavelength and angular distribution of emitted radiation. The substrate includes a base layer and I stacks (I≧2) t...	09/07/2010
7786024	Selective processing of semiconductor nanowires by polarized visible radiation Methods, systems, and apparatuses for annealing semiconductor nanowires and for fabricating electrical devices are provided. Nanowires are deposited on a substrate. A plurality of electrodes is formed. The nanowires are in electrical contact with the plurality of el...	08/31/2010

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Class 438/795 - RADIATION OR ENERGY TREATMENT MODIFYING PROPERTIES OF SEMICONDUCTOR REGION OF SUBSTRATE (E.G., THERMAL, CORPUSCULAR, ELECTROMAGNETIC, ETC.)