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| Number | Title | Issue Date |
| 7446063 | Silicon nitride films A method of forming structures comprises depositing silicon nitride films simultaneously on a plurality of substrates at a first temperature, and heating the silicon nitride films at a temperature greater than the first temperature. ... | 11/04/2008 |
| 7432215 | Semiconductor device manufacturing method and semiconductor manufacturing apparatus A semiconductor device manufacturing method comprises a first step of forming, by a thermal chemical vapor deposition method, a silicon nitride film on an object disposed in a reaction container, with bis tertiary butyl amino silane and NH3 flowing into t... | 10/07/2008 |
| 7416997 | Method of fabricating semiconductor device including removing impurities from silicon nitride layer A method of fabricating a semiconductor device having a silicon nitride layer substantially free of impurities includes forming a silicon nitride layer on a semiconductor substrate and annealing the semiconductor substrate having the silicon nitride layer in an atmo... | 08/26/2008 |
| 7402533 | Masking without photolithography during the formation of a semiconductor device A method for forming a semiconductor device comprises forming a dielectric layer over a semiconductor wafer substrate assembly having closely spaced regions, such as a memory transistor array, and widely spaced regions, such as a periphery. Under conditions specifie... | 07/22/2008 |
| 7387971 | Fabricating method for flat panel display device A fabricating method for a flat panel display device having a thin film pattern over a substrate is disclosed. The fabricating method includes depositing a hydrophilic resin over a substrate and patterning the hydrophilic resin to form hydrophilic resin patterns ove... | 06/17/2008 |
| 7387943 | Method for forming layer for trench isolation structure A method for forming a thermal oxide layer on the surface of a semiconductor substrate exposed during a semiconductor fabricating process. The thermal oxide layer is to be thin to minimize silicon substrate defects caused by volume expansion. A chemical vapor deposi... | 06/17/2008 |
| 7365029 | Method for silicon nitride chemical vapor deposition Embodiments of the invention generally provide a method for depositing a film containing silicon (Si) and nitrogen (N). In one embodiment, the method includes heating a substrate disposed in a processing chamber to a temperature less than about 650 degrees Celsius, ... | 04/29/2008 |
| 7288284 | Post-cleaning chamber seasoning method A method for seasoning a process chamber is disclosed. The seasoning method includes providing a seasoning film on the interior surfaces of a process chamber, typically after cleaning of the chamber. ... | 10/30/2007 |
| 7238629 | Deposition method, method of manufacturing semiconductor device, and semiconductor device The present invention relates to a deposition method of a low dielectric constant insulating film, which comprises the steps of generating a first deposition gas containing at least one silicon source selecting from the group consisting of silicon containing organic... | 07/03/2007 |
| 7208427 | Precursor compositions and processes for MOCVD of barrier materials in semiconductor manufacturing Metalorganic precursors of the formula: (R1R2N)a−bMXb wherein: M is the precursor metal center, selected from the group of Ta, Ti, W, Nb, Si, Al and B; a is a number equal to the valence of M; 1≦bâ‰... | 04/24/2007 |
| 7192626 | Methods for producing silicon nitride films and silicon oxynitride films by thermal chemical vapor deposition Silicon nitride film is formed on substrate by feeding trisilylamine and ammonia into a CVD reaction chamber that contains a substrate. The ammonia gas/trisilylamine gas flow rate ratio is set to a value of at least about 10 and/or the thermal CVD reaction is run at... | 03/20/2007 |
| 7190047 | Transistors and methods for making the same Apparatus comprising: a first compound semiconductor composition layer doped to have a first charge carrier polarity; a second compound semiconductor composition layer doped to have a second charge carrier polarity and located on the first layer; a third compound se... | 03/13/2007 |
| 7166516 | Method for fabricating a semiconductor device including the use of a compound containing silicon and nitrogen to form an insulation film of SiN or SiCN The semiconductor device fabrication method comprises the step of forming gate electrode 20 on a semiconductor substrate 10 with a gate insulation film 18 formed therebetween; the step of implanting dopants in the semiconductor substrate 10 | 01/23/2007 |
| 7138068 | Printed circuit patterned embedded capacitance layer A method is disclosed for fabricating a patterned embedded capacitance layer. The method includes fabricating (1305, 1310) a ceramic oxide layer (510) overlying a conductive metal layer (515) overlying a printed circuit substrate (505), p... | 11/21/2006 |
| 7132732 | Semiconductor device having two distinct sioch layers A semiconductor device has a semiconductor substrate, and a multi-layered wiring arrangement provided thereon. The multi-layered wring arrangement includes at least one insulating layer structure having a metal wiring pattern formed therein. The insulating layer str... | 11/07/2006 |
| 7129187 | Low-temperature plasma-enhanced chemical vapor deposition of silicon-nitrogen-containing films A method for low-temperature plasma-enhanced chemical vapor deposition of a silicon-nitrogen-containing film on a substrate. The method includes providing a substrate in a process chamber, exciting a reactant gas in a remote plasma source, thereafter mixing the exci... | 10/31/2006 |
| 7101814 | Masking without photolithography during the formation of a semiconductor device A method for forming a semiconductor device comprises forming a dielectric layer over a semiconductor wafer substrate assembly having closely-spaced regions, such as a memory transistor array, and widely-spaced regions, such as a periphery. Under conditions specifie... | 09/05/2006 |
| 7098153 | Semiconductor device, manufacture and evaluation methods for semiconductor device, and process condition evaluation method A gate insulating film made of silicon oxynitride is disposed on the partial surface area of a semiconductor substrate. A gate electrode is disposed on the gate insulating film. Source and drain regions are disposed on both sides of the gate electrode. An existence ... | 08/29/2006 |
| 7098061 | Forming interconnects using locally deposited solvents A method for forming an electronic device, comprising: forming a first conductive or semiconductive layer; forming a sequence of at least on insulating layer and at least one semiconducting layer over the first conductive or semiconductive layer; locally depositing ... | 08/29/2006 |
| 7094709 | Method of synthesizing hybrid metal oxide materials and applications thereof The present invention relates to metal oxide coating materials that can be used as thin film thin film coatings on various substrate surfaces. The invention also concerns a method of making metal oxide material which are stable in aqueous phase and that can be depos... | 08/22/2006 |
| 7084080 | Silicon source reagent compositions, and method of making and using same for microelectronic device structure A method of synthesizing an aminosilane source reagent composition, by reacting an aminosilane precursor compound with an amine source reagent compound in a solvent medium comprising at least one activating solvent component, to yield an aminosilane source reagent c... | 08/01/2006 |
| 7067414 | Low k interlevel dielectric layer fabrication methods A low k inter-level dielectric layer fabrication method includes providing a substrate having integrated circuitry at least partially formed thereon. An oxide-comprising inter-level dielectric layer including carbon and having a dielectric constant no greater than 3... | 06/27/2006 |
| 7067415 | Low k interlevel dielectric layer fabrication methods A low k interlevel dielectric layer fabrication method includes providing a substrate having integrated circuitry at least partially formed thereon. An oxide comprising interlevel dielectric layer comprising carbon and having a dielectric constant no greater than 3.... | 06/27/2006 |
| 7037803 | Manufacture of semiconductor device having STI and semiconductor device manufactured A semiconductor device manufacture method has the steps of: (a) forming a polishing stopper layer over a semiconductor substrate; (b) etching the semiconductor substrate to form a trench; (c) forming a first liner insulating layer of silicon oxide over the surface o... | 05/02/2006 |
| 7011866 | Method and apparatus for film deposition A reaction gas made of a hydrogen-based carrier gas and a silane gas or the like is brought in contact with a heated catalyzer of tungsten or the like, and a DC voltage not higher than a glow discharge starting voltage or a voltage produced by superimposing an AV vo... | 03/14/2006 |
| 7001844 | Material for contact etch layer to enhance device performance Stress level of a nitride film is adjusted as a function of two or more of the following: identity of a starting material precursor used to make the nitride film; identity of a nitrogen-containing precursor with which is treated the starting material precursor; rati... | 02/21/2006 |
| 6974781 | Reactor precoating for reduced stress and uniform CVD A method is provided for obtaining stable and elevated deposition rates in a reaction chamber, following the cleaning of the chamber. The method involves cleaning of the chamber, pre-coating the interior surfaces of the reaction chamber with an inorganic composition... | 12/13/2005 |
| 6963006 | Process for the production and purification of bis(tertiary-butylamino)silane A process for synthesizing an aminosilane compound such as bis(tertiarybutylamino)silane is provided. In one aspect of the present invention, there is provided a process for making bis(tertiarybutylamino)silane comprising reacting a stoichiometric excess of tert-but... | 11/08/2005 |
| 6955974 | Method for forming isolation layer of semiconductor device A method for forming an isolation layer of a semiconductor device, which comprises the steps of: a) sequentially forming a pad oxide layer and a pad nitride layer on a silicon substrate; b) etching the pad nitride layer, the pad oxide layer, and the silicon substrat... | 10/18/2005 |
| 6890869 | Low-dielectric silicon nitride film and method of forming the same, semiconductor device and fabrication process thereof A method of forming a silicon nitride film includes a CVD process that uses an organic Si compound having an organic silazane bond as a gaseous source. The CVD process is conducted under a condition that the organic silazane bond in the organic Si source is preserve... | 05/10/2005 |
| 6849562 | Method of depositing a low k dielectric barrier film for copper damascene application A method for depositing a low k dielectric film comprising silicon, carbon, and nitrogen is provided. The low k dielectric film is formed by a gas mixture comprising a silicon source, a carbon source, and NR1R2R3, wherein R1 | 02/01/2005 |
| 6828256 | Methods for forming metal-containing films using metal complexes with chelating O- and/or N-donor ligands A method of forming a film on a substrate using one or more complexes containing one or more chelating O- and/or N-donor ligands. The complexes and methods are particularly suitable for the preparation of semiconductor structures using chemical vapor deposition tech... | 12/07/2004 |
| 6828683 | Semiconductor devices, and semiconductor processing methods In one aspect, the invention encompasses a semiconductor processing method wherein a conductive copper-containing material is formed over a semiconductive substrate and a second material is formed proximate the conductive material. A barrier layer is formed between ... | 12/07/2004 |
| 6777351 | Masking without photolithography during the formation of a semiconductor device A method for forming a semiconductor device comprises forming a dielectric layer over a semiconductor wafer substrate assembly having closely-spaced regions, such as a memory transistor array, and widely-spaced regions, such as a periphery. Under conditions specifie... | 08/17/2004 |
| 6716773 | Process for producing semiconductor substrates A process for producing semiconductor substrates with a coating film having excellent chemical resistance with high yield and excellent production reliability without any development of cracks and any generation or collection of foreign matter resulting from a proje... | 04/06/2004 |
| 6716772 | Semiconductor device manufacturing method and semiconductor manufacturing apparatus A semiconductor device manufacturing apparatus which forms silicon nitride films on a plurality of substrates by thermal chemical vapor deposition. The semiconductor device manufacturing apparatus includes a vertical reaction tube, a substrate holder, and gas suppli... | 04/06/2004 |
| 6673725 | Semiconductor device and method of manufacturing the same The present invention relates to a semiconductor device manufacturing method for forming an interlayer insulating film having a low dielectric constant by coating a copper wiring. The low dielectric constant insulating film is formed by reaction of a plas... | 01/06/2004 |
| 6673709 | Formation of an aluminide coating, incorporating a reactive element, on a metal substrate The reactive element is introduced to the surface of the metal substrate in the form of an oxide powder and the aluminide-type coating is then formed.... | 01/06/2004 |
| 6664201 | Method of manufacturing anti-reflection layer An anti-reflection layer and method of manufacture. A silicon substrate has a conductive layer formed thereon. Plasma-enhanced chemical vapor deposition is performed to form a graded silicon oxynitride layer over the conductive layer. During silicon oxyni... | 12/16/2003 |
| 6645835 | Semiconductor film forming method and manufacturing method for semiconductor devices thereof A method for forming a semiconductor film capable allowing easy cleaning of the processing equipment and capable of forming an epitaxial film at low temperatures as well as a manufacturing method for semiconductor devices utilizing this forming method is ... | 11/11/2003 |
