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| Number | Title | Issue Date |
| 8178448 | Film formation method and apparatus for semiconductor process Disclosed is a method for using a film formation apparatus to form a silicon nitride film by CVD on target substrates while suppressing particle generation. The apparatus includes a process container and an exciting mechanism attached on the process container. The m... | 05/15/2012 |
| 8173554 | Method of depositing dielectric film having Si-N bonds by modified peald method A method of forming dielectric film having Si—N bonds on a semiconductor substrate by plasma enhanced atomic layer deposition (PEALD), includes: introducing a nitrogen- and hydrogen-containing reactive gas and a rare gas into a reaction space inside which the semi... | 05/08/2012 |
| 8129291 | Method of depositing dielectric film having Si-N bonds by modified peald method A method of forming dielectric film having Si—N bonds on a semiconductor substrate by plasma enhanced atomic layer deposition (PEALD), includes: introducing a nitrogen- and hydrogen-containing reactive gas and a rare gas into a reaction space inside which the semi... | 03/06/2012 |
| 8119544 | Film formation method and apparatus for semiconductor process A film formation process is performed to form a silicon nitride film on a target substrate within a process field configured to be selectively supplied with a first process gas containing a silane family gas and a second process gas containing a nitriding gas. The m... | 02/21/2012 |
| 8119545 | Forming a silicon nitride film by plasma CVD Provided is a plasma CVD device. In the plasma CVD device, in producing a silicon nitride film while controlling the size of a band gap by CVD, microwaves are introduced into a treatment vessel by a flat antenna having a plurality of holes. The plasma CVD is carried... | 02/21/2012 |
| 8114790 | Plasma CVD method, silicon nitride film formation method, semiconductor device manufacturing method, and plasma CVD apparatus A plasma processing apparatus includes a process chamber configured to be vacuum-exhausted; a worktable configured to place a target substrate thereon inside the process chamber; a microwave generation source configured to generate microwaves; a planar antenna inclu... | 02/14/2012 |
| 7972980 | Method of forming conformal dielectric film having Si-N bonds by PECVD A method of forming a conformal dielectric film having Si—N bonds on a semiconductor substrate by plasma enhanced chemical vapor deposition (PECVD) includes: introducing a nitrogen- and hydrogen-containing reactive gas and a rare gas into a reaction space inside w... | 07/05/2011 |
| 7919416 | Method of forming conformal dielectric film having Si-N bonds by PECVD A method of forming a conformal dielectric film having Si—N bonds on a semiconductor substrate by plasma enhanced chemical vapor deposition (PECVD) includes: introducing a nitrogen- and hydrogen-containing reactive gas and an additive gas into a reaction space ins... | 04/05/2011 |
| 7884035 | Method of controlling film uniformity and composition of a PECVD-deposited A-SiN: H gate dielectric film deposited over a large substrate surface We have discovered that adding H2 to a precursor gas composition including SiH4, NH3, and N2 is effective at improving the wet etch rate and the wet etch rate uniformity across the substrate surface of a-SiNx:H ... | 02/08/2011 |
| 7838444 | Semiconductor device and fabrication method of the same A fabrication method of a semiconductor device includes forming a silicon nitride layer on a compound semiconductor layer with a plasma CVD method and selectively treating the compound semiconductor layer with use of the silicon nitride layer for a mask. The silicon... | 11/23/2010 |
| 7807586 | Method of forming a stressed passivation film using a non-ionizing electromagnetic radiation-assisted oxidation process A method for forming a stressed passivation film. In one embodiment, the method includes depositing a silicon nitride film over an integrated circuit structure on a substrate and embedding oxygen into a surface of the silicon nitride film by exposing the silicon nit... | 10/05/2010 |
| 7799706 | Neutral beam-assisted atomic layer chemical vapor deposition apparatus and method of processing substrate using the same A neutral beam-assisted atomic layer chemical vapor deposition (ALCVD) apparatus is provided for uniformly depositing an oxide layer filling a planarization layer or a trench to increase uniformity and density of the oxide layer using neutral beams generated by a ne... | 09/21/2010 |
| 7781352 | Method for forming inorganic silazane-based dielectric film A method of forming an inorganic silazane-based dielectric film includes: introducing a gas constituted by Si and H and a gas constituted by N and optionally H into a reaction chamber where an object is placed; controlling a temperature of the object at −50° C. t... | 08/24/2010 |
| 7763551 | RLSA CVD deposition control using halogen gas for hydrogen scavenging Film thickness uniformity and stoichiometry are controlled and deposition rate is increased in the chemical vapor deposition (CVD) of silicon nitride from complex gas mixtures in microwave plasmas. In Si2H6+NH3+Ar gas mixtures using ... | 07/27/2010 |
| 7651961 | Method for forming strained silicon nitride films and a device containing such films A method for forming a strained SiN film and a semiconductor device containing the strained SiN film. The method includes exposing the substrate to a gas including a silicon precursor, exposing the substrate to a gas containing a nitrogen precursor activated by a pl... | 01/26/2010 |
| 7648927 | Method for forming silicon-containing materials during a photoexcitation deposition process Embodiments of the invention generally provide a method for depositing films or layers using a UV source during a photoexcitation process. The films are deposited on a substrate and usually contain a material, such as silicon (e.g., epitaxy, crystalline, microcrysta... | 01/19/2010 |
| 7629273 | Method for modulating stresses of a contact etch stop layer A method for forming a semiconductor structure includes providing a substrate comprising a first device region, forming a metal-oxide-semiconductor (MOS) device in the first device region, forming a stressed layer over the MOS device, and performing a post-treatment... | 12/08/2009 |
| 7601652 | Method for treating substrates and films with photoexcitation Embodiments of the invention generally provide a method for depositing films using photoexcitation. The photoexcitation may be utilized for at least one of treating the substrate prior to deposition, treating substrate and/or gases during deposition, treating a depo... | 10/13/2009 |
| 7563731 | Field effect transistor having a stressed dielectric layer based on an enhanced device topography By increasing the transistor topography after forming a first layer of highly stressed dielectric material, additional stressed material may be added, thereby efficiently increasing the entire layer thickness of the stressed dielectric material. The corresponding in... | 07/21/2009 |
| 7534732 | Semiconductor devices with copper interconnects and composite silicon nitride capping layers Cu interconnects are formed with composite capping layers for reduced electromigration, improved adhesion between Cu and the capping layer, and reduced charge loss in associated non-volatile transistors. Embodiments include depositing a first relatively thin silicon... | 05/19/2009 |
| 7528078 | Process of forming electronic device including a densified nitride layer adjacent to an opening within a semiconductor layer A process of forming an electronic device can include patterning a semiconductor layer to define an opening extending to an insulating layer, wherein the insulating layer lies between a substrate and the semiconductor layer. After patterning the semiconductor layer,... | 05/05/2009 |
| 7517818 | Method for forming a nitrided germanium-containing layer using plasma processing A method and system for forming a nitrided germanium-containing layer by plasma processing. The method includes providing a germanium-containing substrate in a process chamber, generating a plasma from a process gas containing N2 and a noble gas, where th... | 04/14/2009 |
| 7514376 | Manufacture of semiconductor device having nitridized insulating film A method for manufacturing a semiconductor device is disclosed which enables to suppress decrease in the mobility in a channel region by suppressing piercing of boron through a gate insulation film which boron is ion-implanted into a gate electrode. The method for m... | 04/07/2009 |
| 7494941 | Manufacturing method of semiconductor device, and substrate processing apparatus At a time of a substrate loading step or/and at a time of a substrate unloading step, particles are effectively eliminated from a reaction chamber. Provided are a step of loading at least one wafer 200 into a reaction chamber 201, a step of intr... | 02/24/2009 |
| 7435663 | Methods for dicing a released CMOS-MEMS multi-project wafer Simple but practical methods to dice a CMOS-MEMS multi-project wafer are proposed. On this wafer, micromachined microstructures have been fabricated and released. In a method, a photoresist is spun on the full wafer surface, and this photoresist is thick enough to c... | 10/14/2008 |
| 7427518 | Semiconductor device fabrication method and fabrication apparatus According to the present invention, there is provided a semiconductor device fabrication method comprising: measuring light emission intensity of at least one type of wavelength contained in light emitted from a plasma, when one of... | 09/23/2008 |
| 7390744 | Method and composition for polishing a substrate Polishing compositions and methods for removing conductive materials and barrier materials from a substrate surface are provided. Polishing compositions are provided for removing at least a barrier material from a substrate surface by a chemical mechanical polishing... | 06/24/2008 |
| 7381660 | Dielectric barrier layer for a copper metallization layer having a varying silicon concentration along its thickness A silicon nitride layer having a silicon-rich sub-layer and a standard sub-layer is formed on a copper surface to obtain excellent electromigration characteristics due to the standard sub-layer that is in contact with the copper, while maintaining a superior diffusi... | 06/03/2008 |
| 7380328 | Method of forming an inductor The invention includes a stacked open pattern inductor fabricated above a semiconductor substrate. The stacked open pattern inductor includes a plurality of parallel open conducting patterns embedded in a magnetic oxide or in an insulator and a magnetic material. Em... | 06/03/2008 |
| 7381608 | Method for making a semiconductor device with a high-k gate dielectric and a metal gate electrode A method for making a semiconductor device is described. That method comprises adding nitrogen to a silicon dioxide layer to form a nitrided silicon dioxide layer on a substrate. After forming a sacrificial layer on the nitrided silicon dioxide layer, the sacrificia... | 06/03/2008 |
| 7374635 | Forming method and forming system for insulation film A gate insulation film (104) of a MISFET (100) is constituted of a silicon oxide film (106), silicon nitride film (107), and high-permittivity film (108). The silicon oxide film (106) and silicon nitride film (107) ar... | 05/20/2008 |
| 7365029 | Method for silicon nitride chemical vapor deposition Embodiments of the invention generally provide a method for depositing a film containing silicon (Si) and nitrogen (N). In one embodiment, the method includes heating a substrate disposed in a processing chamber to a temperature less than about 650 degrees Celsius, ... | 04/29/2008 |
| 7351668 | Film formation method and apparatus for semiconductor process An insulating film is formed on a target substrate by CVD, in a process field to be selectively supplied with a first process gas containing a silane family gas, a second process gas containing a nitriding or oxynitriding gas, and a third process gas containing a ca... | 04/01/2008 |
| 7312151 | System for ultraviolet atmospheric seed layer remediation The present invention provides a system for removing organic contaminants (216) from a copper seed layer that has been deposited on a semiconductor substrate (206). The present invention provides a housing (204) to enclose the semiconductor subs... | 12/25/2007 |
| 7302982 | Label applicator and system A label applicator including a support surface having a central area and curving downwardly from the central area. A post assembly extends up from the central area such that a label having a label through-hole can be positioned in a support position generally on the... | 12/04/2007 |
| 7303962 | Fabricating method of CMOS and MOS device A complementary metal-oxide-semiconductor (CMOS) device comprising a substrate, a first type of metal-oxide-semiconductor (MOS) transistor, a second type of MOS transistor, an etching stop layer, a first stress layer and a second stress layer is provided. The substr... | 12/04/2007 |
| 7300891 | Method and system for increasing tensile stress in a thin film using multi-frequency electromagnetic radiation A method and system are described for increasing the tensile stress in thin films formed on a substrate, such as silicon nitride films. The thin film may be a planar film, or a non-planar film, such as a nitride film formed over a NMOS gate. The thin film is exposed... | 11/27/2007 |
| 7294553 | Plasma-enhanced chemical vapour deposition process for depositing silicon nitride or silicon oxynitride, process for producing one such layer arrangement, and layer arrangement A plasma-enhanced chemical vapor deposition process for depositing relatively high dielectric constant silicon nitride or oxynitride to form an MIM capacitor is described. The flow rate ratios for the silicon nitride layer are: silane-to-ammonia between 1:20 and 6:5... | 11/13/2007 |
| 7279410 | Method for forming inlaid structures for IC interconnections A method for forming an inlaid interconnect structure for ICs. The method includes forming an etch stop layer, opening a portion of the etch stop layer on an IC die, forming a dielectric layer and cap layer over the etch stop layer, forming a photoresist pattern, an... | 10/09/2007 |
| 7271110 | High density plasma and bias RF power process to make stable FSG with less free F and SiN with less H to enhance the FSG/SiN integration reliability An embodiment of the invention is a HDP CVD FSG layer and an HDP CVD SIN layer with more stability (e.g., less free F and less free H). A feature is that the FSG and SIN are formed using a HDP CVD process with a high plasma density between 1E12 and 1E15 ions/cc and ... | 09/18/2007 |
