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| Number | Title | Issue Date |
| 8293662 | Method of manufacturing semiconductor device, apparatus for manufacturing same, and storage medium A method of manufacturing a semiconductor device includes steps of: generating positively or negatively charged fine bubbles having substantially zero buoyancy in a coating solution as an insulating film forming material; coating the coating solution including the b... | 10/23/2012 |
| 8236708 | Reduced pattern loading using bis(diethylamino)silane (CHNSi) as silicon precursor Aspects of the disclosure pertain to methods of depositing dielectric layers on patterned substrates. In embodiments, dielectric layers are deposited by flowing BIS(DIETHYLAMINO)SILANE (BDEAS), ozone and molecular oxygen into a processing chamber such that a relativ... | 08/07/2012 |
| 7858536 | Semiconductor device and method for manufacturing semiconductor device A semiconductor device comprising a semiconductor substrate, a gate dielectrics formed on the semiconductor substrate and including a silicon oxide film containing a metallic element, the silicon oxide film containing the metallic element including a first region ne... | 12/28/2010 |
| 7772133 | Method and equipment for forming oxide film An oxide film forming equipment is provided with a reactor 10 in which a heater unit 14 holding a substrate 100 is stored, a piping 11 provided with a material gas introducing valve V1 for introducing a material gas containing orga... | 08/10/2010 |
| 7491659 | APCVD method of forming silicon oxide using an organic silane, oxidizing agent, and catalyst-formed hydrogen radical In forming various types of insulating films in manufacture of a semiconductor device, carbon is gasified into CHx, COH etc. during film formation by adding active hydrogen and nitrogen oxide to reduce the carbon content during the film formation, and the... | 02/17/2009 |
| 7470636 | Semiconductor interlayer dielectric material and a semiconductor device using the same The present invention relates to low a dielectric material essential for a next generation semiconductor with high density and high performance, and more particularly to a low dielectric material that is thermally stable and has good film-forming properties and exce... | 12/30/2008 |
| 7465682 | Method and apparatus for processing organosiloxane film A method for processing an organosiloxane film includes loading a target substrate (W) with a coating film formed thereon into a reaction chamber (2), and performing a heat process on the target substrate (W) within the reaction chamber (2) to bake the... | 12/16/2008 |
| 7410913 | Method of manufacturing silicon rich oxide (SRO) and semiconductor device employing SRO Provided are methods for manufacturing silicon rich oxide (SRO) layers useful in the fabrication of semiconductor devices, for example, non-volatile memory devices, and methods for fabricating semiconductor devices incorporating such SRO layers. The methods include ... | 08/12/2008 |
| 7404990 | Non-thermal process for forming porous low dielectric constant films Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. In certain embodiments of the invention, there is provided a low-temperatu... | 07/29/2008 |
| 7399715 | Organic silica-based film, method of forming the same, composition for forming insulating film for semiconductor device, interconnect structure, and semiconductor device A method of forming an organic silica-based film, including: applying a composition for forming an insulating film for a semiconductor device, which is cured by using heat and ultraviolet radiation, to a substrate to form a coating; heating the coating; and applying... | 07/15/2008 |
| 7399697 | Very low dielectric constant plasma-enhanced CVD films The present invention provides a method for depositing nano-porous low dielectric constant films by reacting a mixture comprising an oxidizable silicon component and an oxidizable component having thermally labile groups with an oxidizing gas in gas-phase plasma-enh... | 07/15/2008 |
| 7387943 | Method for forming layer for trench isolation structure A method for forming a thermal oxide layer on the surface of a semiconductor substrate exposed during a semiconductor fabricating process. The thermal oxide layer is to be thin to minimize silicon substrate defects caused by volume expansion. A chemical vapor deposi... | 06/17/2008 |
| 7387971 | Fabricating method for flat panel display device A fabricating method for a flat panel display device having a thin film pattern over a substrate is disclosed. The fabricating method includes depositing a hydrophilic resin over a substrate and patterning the hydrophilic resin to form hydrophilic resin patterns ove... | 06/17/2008 |
| 7361614 | Method of depositing a silicon dioxide comprising layer in the fabrication of integrated circuitry This invention includes methods of depositing a silicon dioxide comprising layer in the fabrication of integrated circuitry, and to methods of forming trench isolation in the fabrication of integrated circuitry. In one implementation, a method of depositing a silico... | 04/22/2008 |
| 7357977 | Ultralow dielectric constant layer with controlled biaxial stress A method for forming a ultralow dielectric constant layer with controlled biaxial stress is described incorporating the steps of forming a layer containing Si, C, O and H by one of PECVD and spin-on coating and curing the film in an environment containing very low c... | 04/15/2008 |
| 7354873 | Method for forming insulation film A method for forming an insulation film having filling property on a semiconductor substrate by plasma reaction includes: vaporizing a silicon-containing hydrocarbon having a Si—O bond compound to provide a source gas; introducing the source gas and a carrier gas ... | 04/08/2008 |
| 7354779 | Topography compensated film application methods Methods for applying topographically compensated film in a semiconductor wafer fabrication process are disclosed. The processes include premapping a surface of a wafer so as to determine the local topography (e.g., z-height) of the wafer and then applying a variable... | 04/08/2008 |
| 7341761 | Methods for producing low-k CDO films Methods of preparing a carbon doped oxide (CDO) layers having a low dielectric constant are provided. The methods involve, for instance, providing a substrate to a deposition chamber and exposing it to one or multiple carbon-doped oxide precursors having molecules w... | 03/11/2008 |
| 7329612 | Semiconductor device and process for producing the same A semiconductor device is manufactured by the steps of generating a film forming gas by setting a flow rate ratio of H2O to any one of a silicon-contained organic compound having a siloxane bond and a silicon-contained organic compound having a CH3 | 02/12/2008 |
| 7326444 | Methods for improving integration performance of low stress CDO films Methods of preparing a carbon doped oxide (CDO) layer with a low dielectric constant ( | 02/05/2008 |
| 7326657 | Post-deposition treatment to enhance properties of Si-O-C low k films A method for providing a dielectric film having enhanced adhesion and stability. The method includes a post deposition treatment that densifies the film in a reducing atmosphere to enhance stability if the film is to be cured ex-situ. The densification generally tak... | 02/05/2008 |
| 7323407 | Method of fabricating dual damascene interconnections of microelectronic device using diffusion barrier layer against base material Methods of fabricating dual damascene interconnections suitable for use in microelectronic devices and similar applications using a diffusion barrier layer to protect against base materials during processing are provided. The methods include the steps of: filling a ... | 01/29/2008 |
| 7314837 | Chemical treatment of semiconductor substrates A method is disclosed for removing liquids from a semiconductor substrate by contacting the liquid on the substrate with a liquid which attracts the liquid on the substrate, separating the liquids from the substrate, and inducing a phase transition in a layer on the... | 01/01/2008 |
| 7312165 | Codeposition of hafnium-germanium oxides on substrates used in or for semiconductor devices Methods of film deposition using metals and metal oxides. A thin film of germanium oxide and an oxide of a non-germanium metal is deposited by ALD by alternating deposition of first and second precursor compounds, wherein the first precursor compound includes a meta... | 12/25/2007 |
| 7312512 | Interconnect structure with polygon cell structures Interconnect structures with polygonal cell structures. An exemplary interconnect structure comprises a substrate and a first dielectric layer, overlying the substrate and exposing a conductive feature formed therethrough and connected with the substrate, wherein th... | 12/25/2007 |
| 7288205 | Hermetic low dielectric constant layer for barrier applications Methods and apparatus are provided for processing a substrate with a hermetic dielectric layer. In one aspect, the invention provides a method for processing a substrate including providing the substrate to a processing chamber, introducing a processing gas comprisi... | 10/30/2007 |
| 7288292 | Ultra low k (ULK) SiCOH film and method The present invention provides a multiphase, ultra low k film which exhibits improved elastic modulus and hardness as well as various methods for forming the same. The multiphase, ultra low k dielectric film includes atoms of Si, C, O and H, has a dielectric constan... | 10/30/2007 |
| 7285502 | Methods for forming porous insulator structures on semiconductor devices A method for forming a porous insulative structure on a semiconductor device structure includes forming a layer of unconsolidated electrically insulative, or dielectric, material with microcapsules dispersed therethrough on at least a portion of the surface of the s... | 10/23/2007 |
| 7285340 | Organic electroluminescent device and method of manufacturing the same An organic electroluminescent device which has a low moisture permeability and an oxygen permeability. The organic electroluminescent device includes a substrate, an organic light-emitting unit having a sequentially stacked structure of a first electrode, an organic... | 10/23/2007 |
| 7282458 | Low K and ultra low K SiCOH dielectric films and methods to form the same Dielectric materials including elements of Si, C, O and H having specific values of mechanical properties (tensile stress, elastic modulus, hardness cohesive strength, crack velocity in water) that result in a stable ultra low k film which is not degraded by water v... | 10/16/2007 |
| 7279732 | Enhanced atomic layer deposition A method of enhanced atomic layer deposition is described. In an embodiment, the enhancement is the use of plasma. Plasma begins prior to flowing a second precursor into the chamber. The second precursor reacts with a prior precursor to deposit a layer on the substr... | 10/09/2007 |
| 7270886 | Spin-on glass composition and method of forming silicon oxide layer in semiconductor manufacturing process using the same A spin-on glass (SOG) composition and a method of forming a silicon oxide layer utilizing the SOG composition are disclosed. The method includes coating on a semiconductor substrate having a surface discontinuity, an SOG composition containing polysilazane having a ... | 09/18/2007 |
| 7270713 | Tunable gas distribution plate assembly A gas distribution plate assembly and a method for distributing gas in a processing chamber are provided. In one embodiment, a gas distribution plate assembly includes a tuning plate coupled to a diffuser plate. The tuning plate has a plurality of orifice holes form... | 09/18/2007 |
| 7270765 | Composition for forming dielectric layer, MIM capacitor and process for its production To provide a composition for forming a dielectric layer excellent in dielectric constant and withstand voltage properties, a MIM capacitor and a process for its production. A composition for forming a dielectric layer, which comprises fine particles of perovs... | 09/18/2007 |
| 7271112 | Methods for forming high density, conformal, silica nanolaminate films via pulsed deposition layer in structures of confined geometry Methods of forming conformal films with increased density are described. The methods may be used to improve gap fill in semiconductor device manufacturing by eliminating seams and voids. The methods involve operating at high reactant partial pressure. Additionally, ... | 09/18/2007 |
| 7259111 | Interface engineering to improve adhesion between low k stacks A method of depositing a organosilicate dielectric layer exhibiting high adhesion strength to an underlying substrate disposed within a single processing chamber without plasma arcing. The method includes positioning a substrate within a processing chamber having a ... | 08/21/2007 |
| 7256146 | Method of forming a ceramic diffusion barrier layer The present invention comprises an interconnect structure including a metal, interlayer dielectric and a ceramic diffusion barrier formed therebetween, where the ceramic diffusion barrier has a composition SivNwCxOyHz... | 08/14/2007 |
| 7244334 | Apparatus used in reshaping a surface of a photoresist The invention relates to a method of improving control over the dimensions of a patterned photoresist, which enables better control of the critical dimensions of a photomask or reticle which is fabricated using the patterned photoresist. In addition, the method may ... | 07/17/2007 |
| 7241704 | Methods for producing low stress porous low-k dielectric materials using precursors with organic functional groups Methods of preparing a low stress porous low-k dielectric material on a substrate are provided. The methods involve the use of a structure former precursor and/or porogen precursor with one or more organic functional groups. In some cases, the structure former precu... | 07/10/2007 |
| 7241707 | Layered films formed by controlled phase segregation Multiple-layer films in integrated circuit processing may be formed by the phase segregation of a single composition formed above a semiconductor substrate. The composition is then induced to phase segregate into at least a first continuous phase and a second contin... | 07/10/2007 |
