Did You Know...
...that it was melting ice cream that inspired the invention of the outboard motor? It was a lovely August day and Ole Evinrude was rowing his boat to his favorite island picnic spot. As he rowed, he watched his ice cream melt and wished he had a faster way to get to the island. At that moment the idea for the outboard motor was born!
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| Number | Title | Issue Date |
| 8124440 | Solid-state imaging device and method for making the same, and manufacturing substrate for solid-state imaging device A method for making a solid-state imaging device includes forming a pinning layer, which is a P-type semiconductor layer or an N-type semiconductor layer, on a first substrate by deposition; forming a semiconductor layer on the pinning layer; forming a photoelectric... | 02/28/2012 |
| 8105864 | Method of forming barrier regions for image sensors Embodiments of the invention provide an image sensor that includes a barrier region for isolating devices. The image sensor comprises a substrate and an array of pixel cells formed on the substrate. Each pixel cell comprises a photo-conversion device. The array comp... | 01/31/2012 |
| 7879642 | Solid-state sensor and manufacturing method thereof A sensor having photodiodes whose sensitivity and storage capacity can be increased is provided. The sensor is formed by arranging the photodiodes in an array with first region of second conductivity type is formed on the principal surface of a substrate of a first ... | 02/01/2011 |
| 7871850 | Light emitting device and manufacturing method thereof Disclosed are a light emitting device and a method for manufacturing the same. The light emitting device includes a substrate having a lead frame, a light emitting diode mounted on the substrate, a mold member formed on the substrate and the light emitting diode, an... | 01/18/2011 |
| 7833819 | Method and apparatus for decreasing storage node parasitic charge in active pixel image sensors Methods, systems and apparatuses for an imager that improve the quality of a captured image. The imager includes a pixel having a photosensor that generates charge in response to receiving electromagnetic radiation and a storage region that stores the generated char... | 11/16/2010 |
| 7776643 | Solid state image pickup device and its manufacture method A solid state image pickup device is provided which includes: charge accumulation regions disposed in a semiconductor substrate in a matrix shape; a plurality of vertical transfer channels formed in the semiconductor substrate each in a close proximity to each colum... | 08/17/2010 |
| 7517717 | Wide dynamic range sensor having a pinned diode with multiple pinned voltages A pixel cell has controlled photosensor anti-blooming leakage by having dual pinned voltage regions, one of which is used to set the anti-blooming characteristics of the photosensor. Additional exemplary embodiments also employ an anti-blooming transistor in conjunc... | 04/14/2009 |
| 7385272 | Method and apparatus for removing electrons from CMOS sensor photodetectors An improved CMOS sensor integrated circuit is disclosed, along with methods of making the circuit and computer readable descriptions of the circuit. ... | 06/10/2008 |
| 7352047 | Systems and methods for integration of heterogeneous circuit devices A heterogeneous device comprises a substrate and a plurality of heterogeneous circuit devices defined in the substrate. In embodiments, a plurality of heterogeneous circuit devices are integrated by successively masking and ion implanting the substrate. The heteroge... | 04/01/2008 |
| 7338833 | Dual dielectric structure for suppressing lateral leakage current in high fill factor arrays A structure and method for suppressing lateral leakage current in full fill factor image arrays includes dual dielectric passivation layer. A first passivation layer includes a material that is an insulator, has a low dielectric constant to minimize capacitive coupl... | 03/04/2008 |
| 7317400 | Self light emitting type display module, electronic appliance loaded with the same module and verification method of faults in the same module Reverse bias voltage VM is applied to any one of self light emitting elements arranged on a light emitting panel 1 under detection mode. Current corresponding to weak current flowing to the element is supplied to a transistor Q3 by the operation of a c... | 01/08/2008 |
| 7315328 | Solid-state image sensor device and driving method A solid-state image sensor device having an image sensing portion performing the photoelectric conversion and being able to correspond to both progressive mode in which all picture element signals obtained by the scanning of one time are output independently, and in... | 01/01/2008 |
| 7288825 | Low-noise semiconductor photodetectors A photodetector is formed from a body of semiconductor material substantially surrounded by dielectric surfaces. A passivation process is applied to at least one surface to reduce the rate of carrier generation and recombination on that surface. Photocurrent is read... | 10/30/2007 |
| 7285438 | Solid-state imaging device and method for manufacturing solid-state imaging device A plurality of optical sensors (4) are arranged in a surface region of a semiconductor substrate (6) in a matrix pattern, and electric charge generated by the optical sensors (4) is transferred by first and second transfer electrodes (12 ... | 10/23/2007 |
| 7271836 | Solid state image pickup device capable of draining unnecessary charge and driving method thereof A drain region is formed along a horizontal charge transfer channel constituting a horizontal charge transfer element, and a barrier region for charges is formed between the horizontal charge transfer channel and drain region. A two-electrode element is formed by us... | 09/18/2007 |
| 7217601 | High-yield single-level gate charge-coupled device design and fabrication In accordance with the invention, an electrically conducting charge transfer channel is formed in a semiconductor substrate and an electrically insulating layer is formed on a surface of the substrate; a layer of gate electrode material is formed on the insulating l... | 05/15/2007 |
| 7198976 | Solid-state imaging device and method for manufacturing the same Channel stop sections are formed by multiple times of impurity ion implanting processes. Four-layer impurity regions are formed across the depth of a semiconductor substrate (across the depth of the bulk), so that a P-type impurity region is formed deep in the semic... | 04/03/2007 |
| 7186583 | Methods of fabricating image sensors including local interconnections A pixel of a semiconductor-based image detector includes a photodetector, at least one switching device serially connected to the photodetector and a bypass device interposed between the photodetector and a power supply voltage. Accordingly, even though excess charg... | 03/06/2007 |
| 7176532 | CMOS active pixel sensor with improved dark current and sensitivity An active pixel sensor which provides reduced dark current, improved sensitivity, and improved modulation transfer function. An N well, surrounded by a P well is formed in a P type epitaxial substrate. A P+ region is formed extending from within the P wel... | 02/13/2007 |
| 7157730 | Angled wafer rotating ion implantation Ion implantation by mounting a semiconductor wafer on a rotating plate that is tilted at an angle relative to an ion implantation flux. The tilt angle and the ion implantation energy are adjusted to produce a desired implantation profile. Ion implantation of mesa st... | 01/02/2007 |
| 7087933 | Light-emitting semiconductor device and method of fabrication A light emitting diode has a semiconductor region for production of light. The semiconductor region is a lamination of two complementary layers, an n-type semiconductor layer, an active layer, a p-type semiconductor layer, another complementary layer, and an ohmic c... | 08/08/2006 |
| 7075128 | Charge transfer element having high output sensitivity A charge transfer element comprising a reverse conductive type well formed on the surface of one conductive type semiconductor substrate, the one conductive type channel region extending in one direction relative to the well, a transfer electrode formed intersecting... | 07/11/2006 |
| 7074639 | Fabrication of a high-precision blooming control structure for an image sensor Provided is a method of fabrication of a blooming control structure for an imager. The structure is produced in a semiconductor substrate in which is configured an electrical charge collection region. The electrical charge collection region is configured to accumula... | 07/11/2006 |
| 7050101 | Solid state image pickup device capable of draining unnecessary charge and driving method thereof A drain region is formed along a horizontal charge transfer channel constituting a horizontal charge transfer element, and a barrier region for charges is formed between the horizontal charge transfer channel and drain region. A two-electrode element is formed by us... | 05/23/2006 |
| 7026185 | Methods of fabricating image sensors including local interconnections A pixel of a semiconductor-based image detector includes a photodetector, at least one switching device serially connected to the photodetector and a bypass device interposed between the photodetector and a power supply voltage. Accordingly, even though excess charg... | 04/11/2006 |
| 7002626 | Image sensor with motion artifact supression and anti-blooming An image sensor includes pixels formed on a semiconductor substrate. Each pixel includes a photoactive region in the semiconductor substrate, a sense node, and a power supply node. A first electrode is disposed near a surface of the semiconductor substrate. A bias s... | 02/21/2006 |
| 6979587 | Image sensor and method for fabricating the same The present invention provides an image sensor capable of suppressing the dark current due to crystalline defects occurring at an edge of a field oxide layer and a method for fabricating the same. The present invention provides an image sensor including: a semicondu... | 12/27/2005 |
| 6927091 | Method for fabricating solid-state imaging device Disclosed is a method for fabricating a solid-state imaging device including a semiconductor substrate of a first conductivity type, a plurality of light-receiving sections provided at a distance in the surface region of the semiconductor substrate, and channel stop... | 08/09/2005 |
| 6869820 | High efficiency light emitting diode and method of making the same A high efficiency light emitting diode (LED) with metal reflector and the method of making the same is disclosed. The metal reflector is composed of at least two layers with one transparent conductive layer and the other highly reflective metal layer. The transparen... | 03/22/2005 |
| 6774420 | Image sensor An image sensor with improved productivity and sensitivity is provided. The image sensor includes a plurality of unit pixels, each unit pixel including an oxide film formed upon a semiconductor substrate; a gate electrode formed on the oxide film; a photodiode N-typ... | 08/10/2004 |
| 6730914 | Photoconductor-on-active-pixel (POAP) sensor utilizing equal-potential pixel electrodes An active pixel sensor. A solid state radiation detection unit may be fabricated using a semiconductor substrate having a plurality of CMOS pixel circuits incorporated into the substrate. An array of pixel circuits includes within each circuit a charge collecting pi... | 05/04/2004 |
| 6680222 | Split-gate virtual-phase CCD image sensor with a diffused lateral overflow anti-blooming drain structure and process of making Generally, and in one form of the invention, a monolithic solid state image-sensing device is disclosed. The device utilizes only a single layer of polysilicon deposition in its fabrication process that is split into two or more phases by very narrow gaps... | 01/20/2004 |
| 6528342 | Solid state imaging apparatus, method of manufacturing the same and video system using such solid state imaging apparatus This invention prevents an end portion of the LOCOS region having a large number of defects of an MOS sensor from depletion and thereby reduces the leak current that occurs in the defects in the end portion of the LOCOS region. An n-type layer region is f... | 03/04/2003 |
| 6489642 | Image sensor having improved spectral response uniformity An image sensor, includes a semiconductor substrate; a photosensor having, a first photosensing region including a first stack of one or more layers of transparent materials overlying the substrate, the first photosensing region having a spectral response... | 12/03/2002 |
| 6403392 | Method for patterning devices A method of fabricating a device is provided. A shadow mask is positioned in a first position over a substrate. A first process is performed on the substrate through the shadow mask. After the first process is performed, the shadow mask is moved to a seco... | 06/11/2002 |
| 6380005 | Charge transfer device and method for manufacturing the same In a charge transfer device of the two-layer electrode, two-phase drive type, an N-- semiconductor region 108 and a first insulator film 103 are formed on a P-type semiconductor substrate 101 in the named order. Then, first transfer electrodes ... | 04/30/2002 |
| 6274401 | Method of manufacturing a CCD sensor with a deep well The present invention is directed to a method of manufacturing a semiconductor device in which ion implantation of impurities is carried out at energy of 0.7 to 16 MeV and the impurities are diffused by heat treatment during a period in which a diffusion ... | 08/14/2001 |
| 6245592 | Method for forming CMOS sensor without blooming effect A method for forming complementary metal-oxide semiconductor sensor is disclosed. The method includes the following steps. Firstly, a semiconductor substrate is provided. A first oxide layer is formed on the surface of the semiconductor substrate. A nitri... | 06/12/2001 |
| 6214631 | Method for patterning light emitting devices incorporating a movable mask A method of fabricatng a device is provided. A shadow mask is positioned in a first position over a substrate. A first process is performed on the substrate through the shadow mask. After the first process is performed, the shadow mask is moved to a secon... | 04/10/2001 |
| 6140147 | Method for driving solid-state imaging device A method for driving a solid-state imaging device such as a CCD (Charge Coupled Device) which facilitates control of a blooming suppressing voltage and can reduce a voltage required for shuttering. The solid-state imaging device to be driven typically com... | 10/31/2000 |
