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| Number | Title | Issue Date |
| 8178447 | Methods of forming hydrophobic silicon dioxide layer and forming organic thin film transistor A method of forming a hydrophobic silicon dioxide layer is provided. A substrate is provided. Thereafter, a hydrophobic silicon dioxide layer is formed on the substrate by using a plasma chemical vapor deposition (CVD) system, in which tetraethyl orthosilicate (TEOS... | 05/15/2012 |
| 7923386 | Method to improve the step coverage and pattern loading for dielectric films A method of forming a layer on a substrate in a chamber, wherein the substrate has at least one formed feature across its surface, is provided. The method includes exposing the substrate to a silicon-containing precursor in the presence of a plasma to deposit a laye... | 04/12/2011 |
| 7923384 | Formation method of porous insulating film, manufacturing apparatus of semiconductor device, manufacturing method of semiconductor device, and semiconductor device In a formation method of a porous insulating film by supplying at least organosiloxane and an inert gas to a reaction chamber and forming an insulating film by a plasma vapor deposition method, a partial pressure of the organosiloxane in the reaction chamber is chan... | 04/12/2011 |
| 7923385 | Methods for producing low stress porous and CDO low-K dielectric materials using precursors with organic functional groups Methods of preparing a carbon doped oxide (CDO) layers having a low dielectric constant are provided. The methods involve, for instance, providing a substrate to a deposition chamber and exposing it to one or multiple carbon-doped oxide precursors having molecules w... | 04/12/2011 |
| 7867922 | Film forming method for dielectric film The present invention is a film forming method for an SiOCH film, comprising a unit-film-forming step including: a deposition step of depositing an SiOCH film element by using an organic silicon compound as a raw material and by using a plasma CVD method; and a hydr... | 01/11/2011 |
| 7825044 | Curing methods for silicon dioxide multi-layers Methods of curing a silicon oxide layer on a substrate are provided. The methods may include the processes of providing a semiconductor processing chamber and a substrate and forming an silicon oxide layer filling a portion of a trench on the substrate, the silicon ... | 11/02/2010 |
| 7790634 | Method for depositing and curing low-k films for gapfill and conformal film applications Methods of making a silicon oxide layer on a substrate are described. The methods may include forming the silicon oxide layer on the substrate in a reaction chamber by reacting an atomic oxygen precursor and a silicon precursor and depositing reaction products on th... | 09/07/2010 |
| 7781351 | Methods for producing low-k carbon doped oxide films with low residual stress Methods of preparing a carbon doped oxide (CDO) layer of low dielectric constant and low residual stress involving, for instance, providing a substrate to a deposition chamber and exposing it to an organosilicon precursor containing unsaturated C—C bonds or to mul... | 08/24/2010 |
| 7745352 | Curing methods for silicon dioxide thin films deposited from alkoxysilane precursor with harp II process Methods of curing a silicon oxide layer on a substrate are provided. The methods may include the processes of providing a semiconductor processing chamber and a substrate and forming an silicon oxide layer overlying at least a portion of the substrate, the silicon o... | 06/29/2010 |
| 7642204 | Methods of forming fluorine doped insulating materials In one aspect, the invention includes a method of forming an insulating material comprising: a) providing a substrate within a reaction chamber; b) providing reactants comprising a Si, F and ozone within the reaction chamber; and c) depositing an insulating material... | 01/05/2010 |
| 7601651 | Method to improve the step coverage and pattern loading for dielectric films A method of forming a layer on a substrate in a chamber, wherein the substrate has at least one formed feature across its surface, is provided. The method includes exposing the substrate to a silicon-containing precursor in the presence of a plasma to deposit a laye... | 10/13/2009 |
| 7585789 | Method for forming porous insulation film A method of forming a porous film on a semiconductor substrate includes: supplying a silicon compound containing at least one Si—O bond in its molecule in a gaseous phase into a reaction chamber; forming a siloxane oligomer through plasma reaction of the silicon c... | 09/08/2009 |
| 7541298 | STI of a semiconductor device and fabrication method thereof A method for filling silicon oxide materials into a trench includes providing a substrate having a plurality of trenches, performing a first deposition process to form a first silicon oxide layer in the trenches, and performing a second deposition process to form a ... | 06/02/2009 |
| 7491658 | Ultra low k plasma enhanced chemical vapor deposition processes using a single bifunctional precursor containing both a SiCOH matrix functionality and organic porogen functionality A method for fabricating a SiCOH dielectric material comprising Si, C, O and H atoms from a single organosilicon precursor with a built-in organic porogen is provided. The single organosilicon precursor with a built-in organic porogen is selected from silane (SiH | 02/17/2009 |
| 7422774 | Method for forming ultra low k films using electron beam The present invention generally provides a method for depositing a low dielectric constant film using an e-beam treatment. In one aspect, the method includes delivering a gas mixture comprising one or more organosilicon compounds and one or more hydrocarbon compound... | 09/09/2008 |
| 7416994 | Atomic layer deposition systems and methods including metal beta-diketiminate compounds The present invention provides atomic layer deposition systems and methods that include metal compounds with at least one β-diketiminate ligand. Such systems and methods can be useful for depositing metal-containing layers on substrates. ... | 08/26/2008 |
| 7410913 | Method of manufacturing silicon rich oxide (SRO) and semiconductor device employing SRO Provided are methods for manufacturing silicon rich oxide (SRO) layers useful in the fabrication of semiconductor devices, for example, non-volatile memory devices, and methods for fabricating semiconductor devices incorporating such SRO layers. The methods include ... | 08/12/2008 |
| 7404990 | Non-thermal process for forming porous low dielectric constant films Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. In certain embodiments of the invention, there is provided a low-temperatu... | 07/29/2008 |
| 7390537 | Methods for producing low-k CDO films with low residual stress Methods of preparing a carbon doped oxide (CDO) layer with a low dielectric constant and low residual stress are provided. The methods involve, for instance, providing a substrate to a deposition chamber and exposing it to a chemical precursor having molecules with ... | 06/24/2008 |
| 7387973 | Method for improving low-K dielectrics by supercritical fluid treatments A method for treating an inter-metal dielectric (IMD) layer to improve a mechanical strength and/or repair plasma etching damage including providing a low-K silicon oxide containing dielectric insulating layer; and carrying out a super critical fluid treatment of th... | 06/17/2008 |
| 7387971 | Fabricating method for flat panel display device A fabricating method for a flat panel display device having a thin film pattern over a substrate is disclosed. The fabricating method includes depositing a hydrophilic resin over a substrate and patterning the hydrophilic resin to form hydrophilic resin patterns ove... | 06/17/2008 |
| 7371695 | Use of TEOS oxides in integrated circuit fabrication processes A method for manufacturing a low temperature removable silicon dioxide hard mask for patterning and etching is provided, wherein tetra-ethyl-ortho-silane (TEOS) is used to deposit a silicon dioxide hard mask. ... | 05/13/2008 |
| 7357977 | Ultralow dielectric constant layer with controlled biaxial stress A method for forming a ultralow dielectric constant layer with controlled biaxial stress is described incorporating the steps of forming a layer containing Si, C, O and H by one of PECVD and spin-on coating and curing the film in an environment containing very low c... | 04/15/2008 |
| 7354872 | Hi-K dielectric layer deposition methods Methods of forming a high dielectric constant dielectric layer are disclosed including providing a process chamber including a holder for supporting a substrate, introducing a first gas comprising a high dielectric constant (Hi-K) dielectric precursor and an oxygen ... | 04/08/2008 |
| 7354873 | Method for forming insulation film A method for forming an insulation film having filling property on a semiconductor substrate by plasma reaction includes: vaporizing a silicon-containing hydrocarbon having a Si—O bond compound to provide a source gas; introducing the source gas and a carrier gas ... | 04/08/2008 |
| 7341761 | Methods for producing low-k CDO films Methods of preparing a carbon doped oxide (CDO) layers having a low dielectric constant are provided. The methods involve, for instance, providing a substrate to a deposition chamber and exposing it to one or multiple carbon-doped oxide precursors having molecules w... | 03/11/2008 |
| 7335609 | Gap-fill depositions introducing hydroxyl-containing precursors in the formation of silicon containing dielectric materials A chemical vapor deposition method for forming a dielectric material in a trench formed on a substrate. The method includes flowing a silicon-containing precursor into a process chamber housing the substrate, flowing an oxidizing gas into the chamber, and providing ... | 02/26/2008 |
| 7329612 | Semiconductor device and process for producing the same A semiconductor device is manufactured by the steps of generating a film forming gas by setting a flow rate ratio of H2O to any one of a silicon-contained organic compound having a siloxane bond and a silicon-contained organic compound having a CH3 | 02/12/2008 |
| 7326657 | Post-deposition treatment to enhance properties of Si-O-C low k films A method for providing a dielectric film having enhanced adhesion and stability. The method includes a post deposition treatment that densifies the film in a reducing atmosphere to enhance stability if the film is to be cured ex-situ. The densification generally tak... | 02/05/2008 |
| 7323407 | Method of fabricating dual damascene interconnections of microelectronic device using diffusion barrier layer against base material Methods of fabricating dual damascene interconnections suitable for use in microelectronic devices and similar applications using a diffusion barrier layer to protect against base materials during processing are provided. The methods include the steps of: filling a ... | 01/29/2008 |
| 7323371 | Deposition method of insulating layers having low dielectric constant of semiconductor device, a thin film transistor substrate using the same and a method of manufacturing the same The present invention relates to a process for vapor depositing a low dielectric insulating film, a thin film transistor using the same, and a preparation method thereof, and more particularly to a process for vapor deposition of low dielectric insulating film that ... | 01/29/2008 |
| 7320945 | Gradient low k material A thin film dielectric layer comprises a top portion and a bottom portion and has density and permittivity characteristics that vary substantially uniformly from the top portion to the bottom portion. Control over the density and/or permittivity is accomplished thro... | 01/22/2008 |
| 7319068 | Method of depositing low k barrier layers A method is provided for processing a substrate including providing a processing gas comprising an organosilicon compound comprising a phenyl group to the processing chamber, and reacting the processing gas to deposit a low k silicon carbide barrier layer useful as ... | 01/15/2008 |
| 7314837 | Chemical treatment of semiconductor substrates A method is disclosed for removing liquids from a semiconductor substrate by contacting the liquid on the substrate with a liquid which attracts the liquid on the substrate, separating the liquids from the substrate, and inducing a phase transition in a layer on the... | 01/01/2008 |
| 7314824 | Nitrogen-free ARC/capping layer and method of manufacturing the same The present invention provides a nitrogen-free ARC/capping layer in a low-k layer stack, which, in particular embodiments, is comprised of carbon-containing silicon dioxide, wherein the optical characteristics are tuned to conform to the 193 nm lithography. Moreover... | 01/01/2008 |
| 7309662 | Method and apparatus for forming a film on a substrate This invention relates to a method and apparatus for forming a film on the substrate. The method comprises supplying to the chamber in gaseous or vapor form a silicon containing organic compound and an oxidizing agent in the presence of a plasma to deposit a film on... | 12/18/2007 |
| 7294588 | In-situ-etch-assisted HDP deposition A process is provided for depositing an silicon oxide film on a substrate disposed in a process chamber. A process gas that includes a halogen source, a fluent gas, a silicon source, and an oxidizing gas reactant is flowed into the process chamber. A plasma having a... | 11/13/2007 |
| 7288292 | Ultra low k (ULK) SiCOH film and method The present invention provides a multiphase, ultra low k film which exhibits improved elastic modulus and hardness as well as various methods for forming the same. The multiphase, ultra low k dielectric film includes atoms of Si, C, O and H, has a dielectric constan... | 10/30/2007 |
| 7285503 | Hermetic cap layers formed on low-k films by plasma enhanced chemical vapor deposition A method of forming a cap layer over a dielectric layer on a substrate including forming a plasma from a process gas including oxygen and tetraethoxysilane, and depositing the cap layer on the dielectric layer, where the cap layer comprises a thickness of about 600 ... | 10/23/2007 |
| 7282452 | Etching method, semiconductor and fabricating method for the same An organic/inorganic hybrid film represented by SiCx−HyOz (x>0, y≧0, z>0) is plasma-etched with an etching gas containing fluorine, carbon and nitrogen. During the etching, a carbon component is eliminated from the surface portio... | 10/16/2007 |
