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| Number | Title | Issue Date |
| 8168548 | UV-assisted dielectric formation for devices with strained germanium-containing layers A method of forming a semiconductor device includes providing a substrate in a vacuum processing tool, the substrate having a strained Ge-containing layer on the substrate and a Si-containing layer on the strained Ge-containing layer, maintaining the substrate at a ... | 05/01/2012 |
| 8163660 | SONOS type stacks for nonvolatile change trap memory devices and methods to form the same A method for fabricating a nonvolatile charge trap memory device is described. The method includes forming a first oxide layer on a surface of a substrate. The first oxide layer is exposed to a first decoupled plasma nitridation process having a first bias. Subseque... | 04/24/2012 |
| 8101531 | Plasma-activated deposition of conformal films Methods and hardware for depositing thin conformal films using plasma-activated conformal film deposition (CFD) processes are described herein. In one example, a method for forming a thin conformal film comprises, in a first phase, generating precursor radicals off ... | 01/24/2012 |
| 8043981 | Dual frequency low temperature oxidation of a semiconductor device Methods and apparatus for forming an oxide layer on a semiconductor substrate are disclosed. A two frequency plasma source is used to form a plasma in a plasma reactor. In various embodiments, different quantities of power are supplied to a power source operating at... | 10/25/2011 |
| 8021992 | High aspect ratio gap fill application using high density plasma chemical vapor deposition A high density plasma chemical vapor deposition process including exciting gas mixture to create a plasma including ions, and directing the plasma into a dense region above the upper surface of the semiconductor wafer, heating the wafer using an additional heat sour... | 09/20/2011 |
| 7998884 | Method of forming a light emitting device with a nanocrystalline silicon embedded insulator film A light emitting device using a silicon (Si) nanocrystalline Si insulating film is presented with an associated fabrication method. The method provides a doped semiconductor or metal bottom electrode. Using a high density plasma-enhanced chemical vapor deposition (H... | 08/16/2011 |
| 7989364 | Plasma oxidation processing method A plasma oxidation process is performed to form a silicon oxide film on the surface of a target object by use of plasma with an O(1D2) radical density of 1×1012 [cm−3] or more generated from a process gas containing oxy... | 08/02/2011 |
| 7989365 | Remote plasma source seasoning Methods of seasoning a remote plasma system are described. The methods include the steps of flowing a silicon-containing precursor into a remote plasma region to deposit a silicon containing film on an interior surface of the remote plasma system. The methods reduce... | 08/02/2011 |
| 7985700 | Composition for forming insulating film and method for fabricating semiconductor device A method for fabricating a semiconductor device utilizing the step of forming a first insulating film of a porous material over a substrate; the step of forming on the first insulating film a second insulating film containing a silicon compound containing Si—CH | 07/26/2011 |
| 7981814 | Replication and transfer of microstructures and nanostructures A method for the duplication of microscopic patterns from a master to a substrate is disclosed, in which a replica of a topographic structure on a master is formed and transferred when needed onto a receiving substrate using one of a variety of printing or imprint t... | 07/19/2011 |
| 7981815 | Semiconductor device producing method and substrate processing apparatus Disclosed is a producing method or a semiconductor device including: loading at least one substrate into a processing chamber; forming a metal oxide film or a silicon oxide film on a surface of the substrate by repeatedly supplying a metal compound or a silicon comp... | 07/19/2011 |
| 7964517 | Use of a biased precoat for reduced first wafer defects in high-density plasma process According to various embodiments, the present teachings include methods for reducing first wafer defects in a high-density plasma chemical vapor deposition process. In an exemplary embodiment, the method can include running a deposition chamber for deposition of fil... | 06/21/2011 |
| 7928020 | Method of fabricating a nitrogenated silicon oxide layer and MOS device having same A method for fabricating a nitrogen-containing dielectric layer and semiconductor device including the dielectric layer in which a silicon oxide layer is formed on a substrate, such that an interface region resides adjacent to substrate and a surface region resides ... | 04/19/2011 |
| 7851385 | Low temperature conformal oxide formation and applications The present invention generally provides apparatus and method for processing a semiconductor substrate. Particularly, embodiments of the present invention relate to a method and apparatus for forming semiconductor devices having a conformal silicon oxide layer forme... | 12/14/2010 |
| 7838443 | Method for minimizing the corner effect by densifying the insulating layer The invention concerns a method for minimizing “corner” effects in shallow silicon oxide trenches, by densifying the silicon oxide layer after it has been deposited in the trenches. Said densification is preferably carried out by irradiating the layer under lumi... | 11/23/2010 |
| 7790633 | Sequential deposition/anneal film densification method A silicon dioxide-based dielectric layer is formed on a substrate surface by a sequential deposition/anneal technique. The deposited layer thickness is insufficient to prevent substantially complete penetration of annealing process agents into the layer and migratio... | 09/07/2010 |
| 7745350 | Impurity control in HDP-CVD DEP/ETCH/DEP processes Methods are disclosed of depositing a silicon oxide film on a substrate disposed in a substrate processing chamber. The substrate has a gap formed between adjacent raised surfaces. A first portion of the silicon oxide film is deposited over the substrate and within ... | 06/29/2010 |
| 7745351 | Post deposition plasma treatment to increase tensile stress of HDP-CVD SIO Methods of forming a dielectric layer where the tensile stress of the layer is increased by a plasma treatment at an elevated position are described. In one embodiment, oxide and nitride layers are deposited on a substrate and patterned to form an opening. A trench ... | 06/29/2010 |
| 7727912 | Method of light enhanced atomic layer deposition A method light enhanced atomic layer deposition for forming a film on a substrate. The method includes disposing the substrate in a process chamber of a light enhanced atomic layer deposition (LEALD) system configured to perform a LEALD process; and depositing a fil... | 06/01/2010 |
| 7674728 | Deposition from liquid sources A liquid injector is used to vaporize and inject a silicon precursor into a process chamber to form silicon-containing layers during a semiconductor fabrication process. The injector is connected to a source of silicon precursor, which preferably comprises liquid tr... | 03/09/2010 |
| 7670964 | Apparatus and methods of forming a gas cluster ion beam using a low-pressure source Embodiments of a gas cluster ion beam apparatus and methods for forming a gas cluster ion beam using a low-pressure process source are generally described herein. In one embodiment, the low-pressure process source is mixed with a high-pressure diluent source in a st... | 03/02/2010 |
| 7622402 | Method for forming underlying insulation film The surface of an insulating film disposed on an electronic device substrate is irradiated with plasma based on a process gas comprising at least an oxygen atom-containing gas, to thereby form an underlying film at the interface between the insulating film and the e... | 11/24/2009 |
| 7598184 | Plasma composition for selective high-k etch A method for the selective removal of a high-k layer such as HfO2 over silicon or silicon dioxide is provided. More specifically, a method for etching high-k selectively over silicon and silicon dioxide and a plasma composition for performing the selectiv... | 10/06/2009 |
| 7589031 | Method of avoiding haze formation on surfaces of silicon-containing PECVD-deposited thin films A method of PECVD deposition of silicon-containing films has been discovered and further developed. The method is particularly useful when the films are deposited on substrates having surface areas which are larger than 25,000 cm2. The method prevents the... | 09/15/2009 |
| 7579286 | Method of fabricating a semiconductor device using plasma to form an insulating film A fabrication method of a semiconductor device is disclosed by which damage to another film or exfoliation of a film is prevented and an insulating film having a dielectric constant of 2.5 or less can be formed while a film strength is maintained without deteriorati... | 08/25/2009 |
| 7514375 | Pulsed bias having high pulse frequency for filling gaps with dielectric material During bottom filling of high aspect ratio gaps and trenches in an integrated circuit substrate using HDP-CVD, a pulsed HF bias is applied to the substrate. In some embodiments, pulsed HF bias is applied to the substrate during etching operations. The pulsed bias ty... | 04/07/2009 |
| 7491656 | Semiconductor device, method for forming silicon oxide film, and apparatus for forming silicon oxide film A silicon oxide film (1701) serving as a gate insulating film of a semiconductor device contains Kr. Therefore, the stress in the silicon oxide film (1701) and the stress at the interface between silicon and the silicon oxide film are relaxed, and the ... | 02/17/2009 |
| 7491657 | Method of manufacturing a semiconductor device having a one time programmable (OTP) erasable and programmable read only memory (EPROM) cell Provided is an erasable and programmable read only memory (EPROM) device in which a plasma enhanced oxide (PEOX) film covers an upper surface of a floating gate in a single poly one time programmable (OTP) cell and a method of manufacturing a semiconductor device ha... | 02/17/2009 |
| 7465681 | Method for producing smooth, dense optical films The invention is directed to preparing optical elements having a thin, smooth, dense coating or film thereon, and a method for making such coating or film. The coated element has a surface roughness of | 12/16/2008 |
| 7465680 | Post deposition plasma treatment to increase tensile stress of HDP-CVD SIO A plasma treatment process for increasing the tensile stress of a silicon wafer is described. Following deposition of a dielectric layer on a substrate, the substrate is lifted to an elevated position above the substrate receiving surface and exposed to a plasma tre... | 12/16/2008 |
| 7452829 | Plasma CVD method In a process of forming a silicon oxide film 116 that constitutes an interlayer insulating film with TEOS as a raw material through the plasma CVD method, the RF output is oscillated at 50 W, and the RF output is gradually increased from 50 W to 250 W (an out... | 11/18/2008 |
| 7446060 | Thin-film forming method using silane and an oxidizing gas Disclosed is a film-forming method, comprising supplying into a plasma processing chamber at least three kinds of gases including a silicon compound gas, an oxidizing gas, and a rare gas, the percentage of the partial pressure of the rare gas (Pr) based on the total... | 11/04/2008 |
| 7446061 | Method of forming insulating film, method of manufacturing semiconductor device and their controlling computer program A semiconductor substrate with a groove is placed in a plasma generating reaction chamber. Silicon, oxygen and hydrogen containing gases are introduced into the reaction chamber as process gases. A ratio of a gas flow of the hydrogen containing gas except the silico... | 11/04/2008 |
| 7442656 | Method and apparatus for forming silicon oxide film A silicon oxide film is formed on a target substrate by CVD, in a process field configured to be selectively supplied with a first process gas containing a chlorosilane family gas, a second process gas containing a Cl-replacing gas, and a third process gas containin... | 10/28/2008 |
| 7435684 | Resolving of fluorine loading effect in the vacuum chamber This invention relates to electronic device fabrication processes for making devices such as semiconductor wafers and resolves the fluorine loading effect in the reaction chamber of a HDP CVD apparatus used for forming dielectric layers in high aspect ratio, narrow ... | 10/14/2008 |
| 7427518 | Semiconductor device fabrication method and fabrication apparatus According to the present invention, there is provided a semiconductor device fabrication method comprising: measuring light emission intensity of at least one type of wavelength contained in light emitted from a plasma, when one of... | 09/23/2008 |
| 7422774 | Method for forming ultra low k films using electron beam The present invention generally provides a method for depositing a low dielectric constant film using an e-beam treatment. In one aspect, the method includes delivering a gas mixture comprising one or more organosilicon compounds and one or more hydrocarbon compound... | 09/09/2008 |
| 7410913 | Method of manufacturing silicon rich oxide (SRO) and semiconductor device employing SRO Provided are methods for manufacturing silicon rich oxide (SRO) layers useful in the fabrication of semiconductor devices, for example, non-volatile memory devices, and methods for fabricating semiconductor devices incorporating such SRO layers. The methods include ... | 08/12/2008 |
| 7405129 | Device comprising doped nano-component and method of forming the device A device comprising a doped semiconductor nano-component and a method of forming the device are disclosed. The nano-component is one of a nanotube, nanowire or a nanocrystal film, which may be doped by exposure to an organic amine-containing dopant. Illustrative exa... | 07/29/2008 |
| 7390757 | Methods for improving low k FSG film gap-fill characteristics The present invention relates to fluorinated silicate glass (FSG) with low dielectric constant and improved gap-fill characteristics. In the present method, a fluorinated silicon source, an optional fluorine source, an optional carbon source, a hydrogen source, and ... | 06/24/2008 |
