Class 438/787 - Silicon oxide formation

Subclass of Class 438 - Semiconductor device manufacturing: process
Definition: Processes wherein the deposited insulative material is a
No. of patents: 948
Last issue date: 03/27/2012

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Number	Title	Issue Date
8143175	Dry etching method The invention provides a dry etching method for performing a wiring process on a semiconductor substrate using a plasma etching apparatus, wherein the wiring process is performed without causing disconnection or deflection of the wiring. The invention provides a dry...	03/27/2012
8133822	Method of forming silicon nanocrystal embedded silicon oxide electroluminescence device with a mid-bandgap transition layer A method is provided for forming a silicon (Si) nanocrystal embedded Si oxide electroluminescence (EL) device with a mid-bandgap transition layer. The method provides a highly doped Si bottom electrode, and forms a mid-bandgap electrically insulating dielectric film...	03/13/2012
8129289	Method to deposit conformal low temperature SiO2 Methods of controlling critical dimensions of reduced-sized features during semiconductor fabrication through pitch multiplication are disclosed. Pitch multiplication is accomplished by patterning mask structures via conventional photoresist techniques and subsequen...	03/06/2012
8119543	Methods of reducing defect formation on silicon dioxide formed by atomic layer deposition (ALD) processes Methods for reducing and inhibiting defect formation on silicon dioxide formed by atomic layer deposition (ALD) are disclosed. Defect reduction is accomplished by performing processing on the silicon dioxide subsequent to deposition by ALD. The post-deposition proce...	02/21/2012
8084373	Manufacturing method of semiconductor device for enhancing the current drive capability A manufacturing method of a semiconductor device is provided which can uniformly form a good and thin silicon oxide film or the like at a relatively low temperature. In step 1, a semiconductor substrate is exposed to monosilane (SiH4). Then, in ste...	12/27/2011
8058184	Semiconductor device producing method Disclosed is a producing method of a semiconductor device, including: loading at least one substrate formed on a surface thereof with a tungsten film into a processing chamber; and forming a silicon oxide film on the surface of the substrate which includes the tungs...	11/15/2011
8030222	Structures with increased photo-alignment margins Methods and structures are provided for increasing alignment margins when contacting pitch multiplied interconnect lines with other conductive features in memory devices. The portions of the lines at the periphery of the memory device are formed at an angle and are ...	10/04/2011
8021991	Technique to radiation-harden trench refill oxides Oxide films are deposited under conditions generating a silicon-rich oxide in which silicon nanoclusters form either during deposition or during subsequent annealing. Such deposition conditions include those producing films with optical indices (n) greater than 1.46...	09/20/2011
7989363	Method for rapid thermal treatment using high energy electromagnetic radiation of a semiconductor substrate for formation of dielectric films A method for fabricating semiconductor devices, e.g., SONOS cell. The method includes providing a semiconductor substrate (e.g., silicon wafer, silicon on insulator) having a surface region, which has a native oxide layer. The method includes treating the surface re...	08/02/2011
7972979	Substrate processing method and substrate processing apparatus Provided is a substrate processing method comprising: loading a substrate, on which polysilazane is applied, into a substrate process chamber; maintaining an inside of the substrate process chamber, into which the substrate is loaded, in water vapor atmosphere and d...	07/05/2011
7964516	Film formation apparatus for semiconductor process and method for using same A method for using a film formation apparatus includes, in order to inhibit metal contamination: performing a cleaning process using a cleaning gas on an inner wall of a process container and a surface of a holder with no productive target objects held thereon; and ...	06/21/2011
7943531	Methods for forming a silicon oxide layer over a substrate A method of depositing a silicon oxide layer over a substrate includes providing a substrate to a deposition chamber. A first silicon-containing precursor, a second silicon-containing precursor and a NH3 plasma are reacted to form a silicon oxide layer. T...	05/17/2011
7932189	Process of forming an electronic device including a layer of discontinuous storage elements An electronic device can include a layer of discontinuous storage elements. A dielectric layer overlying the discontinuous storage elements can be substantially hydrogen-free. A process of forming the electronic device can include forming a layer including silicon o...	04/26/2011
7923383	Method and apparatus for treating a semi-conductor substrate This invention relates to a method of treating a semiconductor wafer and in particular, but not exclusively, to planarisation. The method consists of depositing a liquid short-chain polymer formed from a silicon containing bas or vapour. Subsequently water and OH ar...	04/12/2011
7867920	Method for modifying high-k dielectric thin film and semiconductor device There is provided a method for modifying a high-k dielectric thin film provided on the surface of an object using a metal organic compound material. The method includes a preparation process for providing the object with the high-k dielectric thin film formed on the...	01/11/2011
7867921	Reduction of etch-rate drift in HDP processes A processing chamber is seasoned by providing a flow of season precursors to the processing chamber. A high-density plasma is formed from the season precursors by applying at least 7500 W of source power distributed with greater than 70% of the source power at a top...	01/11/2011
7858535	Methods of reducing defect formation on silicon dioxide formed by atomic layer deposition (ALD) processes and methods of fabricating semiconductor structures Methods for reducing and inhibiting defect formation on silicon dioxide formed by atomic layer deposition (ALD) are disclosed. Defect reduction is accomplished by performing processing on the silicon dioxide subsequent to deposition by ALD. The post-deposition proce...	12/28/2010
7855154	Methods of forming intermediate semiconductor device structures using spin-on, photopatternable, interlayer dielectric materials A cap layer that enables a photopatternable, spin-on material to be used in the formation of semiconductor device structures at wavelengths that were previously unusable. The photopatternable, spin-on material is applied as a layer to a semiconductor substrate. The ...	12/21/2010
7838442	Thin film solar cell and its fabrication A method for producing a solar cell including the steps of forming a p-type microcrystalline silicon oxide layer on a glass substrate using a PECVD method and raw gases comprising Silane gas, Diborane gas, Hydrogen gas and Carbon Dioxide gas. The method may employ a...	11/23/2010
7803721	Semiconductor device and method of manufacturing same A semiconductor device includes a deposited-type insulating film disposed on a substrate; a coating-type insulating film disposed on a surface of the deposited-type insulating film and having a film density which is lower than a film density of the deposited-type in...	09/28/2010
7803722	Methods for forming a dielectric layer within trenches A method for forming a semiconductor structure includes reacting a silicon precursor and an atomic oxygen or nitrogen precursor at a processing temperature of about 150° C. or less to form a silicon oxide or silicon-nitrogen containing layer over a substrate. The s...	09/28/2010
7767594	Semiconductor device producing method Disclosed is a producing method of a semiconductor device, including: loading at least one substrate formed on a surface thereof with a tungsten film into a processing chamber; and forming a silicon oxide film on the surface of the substrate which includes the tungs...	08/03/2010
7759263	Methods for fabricating improved gate dielectrics Disclosed are a variety of methods for increasing the relative thickness in the peripheral or edge regions of gate dielectric patterns to suppress leakage through these regions. The methods provide alternatives to conventional GPOX processes and provide the improved...	07/20/2010
7737052	Advanced multilayer dielectric cap with improved mechanical and electrical properties A dielectric cap, interconnect structure containing the same and related methods are disclosed. The inventive dielectric cap includes a multilayered dielectric material stack wherein at least one layer of the stack has good oxidation resistance, Cu diffusion and/or ...	06/15/2010
7713887	Method for forming isolation layer in semiconductor device A method for forming an isolation layer in a semiconductor device includes forming a trench in a semiconductor substrate, forming a first liner nitride layer on an exposed surface of the trench, forming a first high density plasma (HDP) oxide layer such that the fir...	05/11/2010
7682990	Method of manufacturing nonvolatile semiconductor memory device Conventionally, a MONOS type nonvolatile memory is fabricated by subjecting a silicon nitride film to ISSG oxidation to form a top silicon oxide film of ONO structure. If the ISSG oxidation conditions are severe, repeats of programming/erase operation cause increase...	03/23/2010
7678712	Vapor phase treatment of dielectric materials The invention concerns a method for applying a surface modification agent composition for organosilicate glass dielectric films. More particularly, the invention pertains to a method for treating a silicate or organosilicate dielectric film on a substrate, which fil...	03/16/2010
7674727	Nitrous oxide anneal of TEOS/ozone CVD for improved gapfill A method of filling a gap defined by adjacent raised features on a substrate includes providing a flow of a silicon-containing processing gas to a chamber housing the substrate and providing a flow of an oxidizing gas to the chamber. The method also includes varying...	03/09/2010
7651960	Chemical vapor deposition method preventing particles forming in chamber Preventing a chemical vapor deposition (CVD) chamber from particle contamination in which a higher low-frequency radio frequency (LFRF) power and longer process time are provided to vacate the chamber and perform a pre-heat process. Following that, a pre-oxide layer...	01/26/2010
7645711	Semiconductor device fabrication method According to the present invention, there is provided a semiconductor device fabrication method comprising: forming a first insulating film on a semiconductor substrate; forming a conductive layer on the first insu...	01/12/2010
7605095	Heat processing method and apparatus for semiconductor process A heat processing method for a semiconductor process includes placing a plurality of target substrates stacked at intervals in a vertical direction within a process field of a process container. Each of the target substrates includes a process object layer on its su...	10/20/2009
7601650	Carbon nanotube device and process for manufacturing same The present invention contemplates a variety of methods and techniques for fabricating an improved carbon nanotube (CNT) device such as an AFM probe. A CNT is first formed on a desired location such as a substrate. The CNT and substrate are then covered with a prote...	10/13/2009
7589030	Liquid crystal display device and fabricating method thereof A method of fabricating a liquid crystal display device includes performing a first mask process to form a gate line, a gate pad, and a gate electrode on a substrate. The method of fabricating a liquid crystal display device further includes performing a second mask...	09/15/2009
7585788	Rare earth element-doped oxide precursor with silicon nanocrystals A method is provided for forming a rare earth element-doped silicon oxide (SiO2) precursor with nanocrystalline (nc) Si particles. In one aspect the method comprises: mixing Si particles into a first organic solvent, forming a first solution with a first ...	09/08/2009
7582575	Method for forming insulation film A method for forming an insulation film on a semiconductor substrate by plasma reaction includes: vaporizing a silicon-containing hydrocarbon having a Si—O bond compound to provide a source gas; introducing the source gas and a carrier gas without an oxidizing gas...	09/01/2009
7538047	Method of manufacturing semiconductor device A method of manufacturing a semiconductor device includes forming a trench for isolation on a surface of a substrate including a semiconductor substrate, filling the trench with a solution containing a perhydrosilazane polymer by applying the solution on the substra...	05/26/2009
7514374	Method for manufacturing flat substrates For avoiding the metallic inner surface of a PECVD reactor to influence thickness uniformity and quality uniformity of a μc-Si layer (19) deposited on a large-surface substrate, (15) before each substrate is single treated at least parts of the addres...	04/07/2009
7488693	Method for producing silicon oxide film [Problems] It is to provide a method for producing a silicon oxide film having better quality than a TEOS at low temperature. And it is to provide a method for manufacturing a semiconductor device wherein an insulating film composed of a silicon oxide is formed....	02/10/2009
7470635	Method of depositing a silicon dioxide-comprising layer in the fabrication of integrated circuitry, methods of forming trench isolation in the fabrication of integrated circuitry, methods of depositing silicon dioxide-comprising layers in the fabrication of integrated circuitry, and methods of forming bit line over capacitor arrays of memory cells This invention includes methods of depositing silicon dioxide comprising layers in the fabrication of integrated circuitry, methods of forming trench isolation, and methods of forming bit line over capacitor arrays of memory cells. In one implementation, a semicondu...	12/30/2008
7465679	Insulating film and method of producing semiconductor device A silicon oxide film is formed to cover an island non-monocrystalline silicon region by plasma CVD using an organic silane having ethoxy groups (e.g., TEOS) and oxygen as raw materials, while hydrogen chloride or a chlorine-containing hydrocarbon (e.g., trichloroeth...	12/16/2008

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Class 438/787 - Silicon oxide formation