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| Number | Title | Issue Date |
| 8076251 | Method of manufacturing semiconductor device, method of processing substrate and substrate processing apparatus Provided is a method of manufacturing a semiconductor device. The method includes: loading a substrate into a process vessel; performing a process to form an oxide, nitride, or oxynitride film on the substrate by alternately repeating: (a) forming a layer containing... | 12/13/2011 |
| 8043980 | Methods for making and using halosilylgermanes The invention provides compounds of, and methods for the preparation of compounds of, the molecular formula, SixGeyHz—aXa; wherein X is halogen, and x, y, z, and a are defined herein, a... | 10/25/2011 |
| 8039404 | Production method for semiconductor device A production method for a semiconductor device comprising the first step of supplying a first reaction material to a substrate housed in a processing chamber to subject to a ligand substitution reaction a ligand as a reaction site existing on the surface of the subs... | 10/18/2011 |
| 8003549 | Methods of forming moisture barrier for low K film integration with anti-reflective layers A nitrogen-free anti-reflective layer for use in semiconductor photolithography is fabricated in a chemical vapor deposition process, optionally plasma-enhanced, using a gaseous mixture of carbon, silicon, and oxygen sources. By varying the process parameters, a sub... | 08/23/2011 |
| 7955994 | Method for manufacturing semiconductor device, semiconductor device, and electronic appliance An object of the present invention is to provide a semiconductor device including an insulating layer with a high dielectric strength voltage, a low dielectric constant, and low hygroscopicity. Another object of the present invention is to provide an electronic appl... | 06/07/2011 |
| 7902088 | High quantum efficiency silicon nanoparticle embedded SiONluminescence device A method is provided for fabricating a high quantum efficiency silicon (Si) nanoparticle embedded SiOXNY film for luminescence (electroluminescence—EL and photoluminescence—PL) applications. The method provides a bottom electrode, and depos... | 03/08/2011 |
| 7833914 | Capacitors and methods with praseodymium oxide insulators Methods of forming and the resulting capacitors formed by these methods are shown. Monolayers that contain praseodymium are deposited onto a substrate and subsequently processed to form praseodymium oxide dielectrics. Monolayers that contain titanium or other metals... | 11/16/2010 |
| 7811947 | Optical substrate, light emitting element, display device and manufacturing methods thereof The present invention relates to an optical substrate comprising a transparent substrate, a low refractive index layer, whose refractive index is lower than that of the transparent substrate, disposed over the transparent substrate, and a solgel film disposed over t... | 10/12/2010 |
| 7754622 | Patterning method utilizing SiBN and photolithography Disclosed is a patterning method including: forming, on a thin film, a sacrificial film made of a material different from that of the thin film and made of SiBN; processing the sacrificial film into a pattern having a preset interval by using a photolithography tech... | 07/13/2010 |
| 7745349 | Method for fabricating semiconductor transistor A method for fabricating a semiconductor transistor which eliminates device defects generated during an etching process for forming gates. The method may include laminating an ONO layer on and/or over a semiconductor substrate, and then coating a polysilicon layer o... | 06/29/2010 |
| 7718553 | Method for forming insulation film having high density A method for forming an insulation film on a semiconductor substrate by plasma reaction includes: introducing into a reaction chamber a source gas of a silicon-containing hydrocarbon compound comprising in its molecule at least one Si—O bond and at least one bond ... | 05/18/2010 |
| 7709403 | Silicon carbide-oxide layered structure, production method thereof, and semiconductor device A gate insulating film which is an oxide layer mainly made of SiO2 is formed over a silicon carbide substrate by thermal oxidation, and then, a resultant structure is annealed in an inert gas atmosphere in a chamber. Thereafter, the silicon carbide-oxide ... | 05/04/2010 |
| 7704897 | HDP-CVD SiON films for gap-fill The present invention pertains to methods of depositing low stress/high index multi-layer films on a substrate using an HDP-CVD process. The multi-layer films include two lining layers and a bulk gap-fill layer and the HDP-CVD process employs a reduced substrate bia... | 04/27/2010 |
| 7696108 | Method of forming shadow layer on the wafer bevel A method of forming a shadow layer on a wafer bevel region is provided. First, a substrate having the wafer bevel region and a central region is provided. Thereafter, an upper insulator and a lower insulator are provided. The upper insulator is disposed on an upper ... | 04/13/2010 |
| 7666801 | Systems and methods for forming metal oxides using metal compounds containing aminosilane ligands A method of forming (and an apparatus for forming) a metal oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and one or more precursor compounds that include aminosilane ligands. ... | 02/23/2010 |
| 7651959 | Method for forming silazane-based dielectric film A method of forming a dielectric film includes: introducing a source gas essentially constituted by Si, N, H, and optionally C and having at least one bond selected from Si—N, Si—Si, and Si—H into a reaction chamber where a substrate is placed; depositing a si... | 01/26/2010 |
| 7642203 | Passivation layer for semiconductor device and manufacturing method thereof Embodiments relate to a passivation layer for a semiconductor device that may be formed in a substrate having a plurality of semiconductor devices. The passivation layer may includes a first passivation layer, a second passivation layer, and a third passivation laye... | 01/05/2010 |
| 7642202 | Methods of forming moisture barrier for low k film integration with anti-reflective layers A nitrogen-free anti-reflective layer for use in semiconductor photolithography is fabricated in a chemical vapor deposition process, optionally plasma-enhanced, using a gaseous mixture of carbon, silicon, and oxygen sources. By varying the process parameters, a sub... | 01/05/2010 |
| 7638442 | Method of forming a silicon nitride layer on a gate oxide film of a semiconductor device and annealing the nitride layer A process for forming a silicon nitride layer on a gate oxide film as part of formation of a gate structure in a semiconductor device includes: forming a layer of silicon nitride on top of a gate oxide film on a semiconductor substrate by a nitridation process, heat... | 12/29/2009 |
| 7622401 | Method of producing insulator thin film, insulator thin film, method of manufacturing semiconductor device, and semiconductor device A method of producing an insulator thin film, for forming a thin film on a substrate by use of the atomic layer deposition process, includes a first step of forming a silicon atomic layer on the substrate and forming an oxygen atomic layer on the silicon atomic laye... | 11/24/2009 |
| 7569502 | Method of forming a silicon oxynitride layer A SiOxNy gate dielectric and a method for forming a SiOxNy gate dielectric by heating a structure comprising a silicon oxide film on a silicon substrate in an atmosphere comprising NH3 and then exposing the stru... | 08/04/2009 |
| 7560396 | Material for electronic device and process for producing the same An electronic device material comprising at least an electronic device substrate and a silicon oxynitride film disposed on the substrate is provided. The silicon oxynitride film is characterized by containing nitrogen atoms in a large amount in the vicinity of the o... | 07/14/2009 |
| 7534731 | Method for growing a thin oxynitride film on a substrate A method for growing an oxynitride film on a substrate includes positioning the substrate in a process chamber, heating the process chamber, flowing a wet process gas comprising water vapor and a nitriding gas comprising nitric oxide into the process chamber. The we... | 05/19/2009 |
| 7521380 | Methods for fabricating a stress enhanced semiconductor device having narrow pitch and wide pitch transistors A method is provided for fabricating a semiconductor device on a semiconductor substrate. A plurality of narrow gate pitch transistors (NPTs) and wide gate pitch transistors (WPTs) are formed on and in the semiconductor substrate. The NPTs are spaced apart by a firs... | 04/21/2009 |
| 7507678 | Method and apparatus for forming oxynitride film and nitride film, oxynitride film, nitride film, and substrate Uniform oxynitride and nitride films can be formed by low-temperature and high-speed nitriding reaction not dependent on the nitriding time or nitriding temperature. A solid dielectric is provided on at least one of opposed surfaces of a pair of electrodes opposed t... | 03/24/2009 |
| 7459404 | Adhesion improvement for low k dielectrics Methods are provided for processing a substrate for depositing an adhesion layer having a low dielectric constant between two low k dielectric layers. In one aspect, the invention provides a method for processing a substrate including introducing an organosilicon co... | 12/02/2008 |
| 7439195 | Systems and methods for forming metal oxides using metal compounds containing aminosilane ligands A method of forming (and an apparatus for forming) a metal oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and one or more precursor compounds that include aminosilane ligands. ... | 10/21/2008 |
| 7435640 | Method of fabricating gate structure A method of fabricating a gate structure is provided. First, a sacrificial oxide layer is formed on a substrate. A nitridation treatment process is performed to redistribute the nitrogen atoms in the sacrificial layer and the substrate and produce a concentration pr... | 10/14/2008 |
| 7429538 | Manufacturing method for two-step post nitridation annealing of plasma nitrided gate dielectric A method of forming a silicon oxynitride gate dielectric. The method includes incorporating nitrogen into a dielectric film using a plasma nitridation process to form a silicon oxynitride film. The silicon oxynitride film is annealed in a first ambient. The first am... | 09/30/2008 |
| 7429540 | Silicon oxynitride gate dielectric formation using multiple annealing steps A method for processing a semiconductor substrate in a chamber includes forming a silicon oxynitride film using a two-step anneal process. The first anneal step includes annealing the silicon oxynitride film in the presence of an oxidizing gas that has a partial pre... | 09/30/2008 |
| 7407820 | Method for monitoring oxide film deposition A method for monitoring oxide film deposition is disclosed. The method utilizes monitor wafers having silicon nitride films thereon instead of bare wafers to monitor the growth of silicon oxide films in a furnace. The method for monitoring oxide film deposition incl... | 08/05/2008 |
| 7399714 | Method of forming a structure over a semiconductor substrate The invention includes a method of forming a structure over a semiconductor substrate. A silicon dioxide containing layer is formed across at least some of the substrate. Nitrogen is formed within the silicon dioxide containing layer. Substantially all of the nitrog... | 07/15/2008 |
| 7396729 | Methods of forming semiconductor devices having a trench with beveled corners A semiconductor device is formed by providing a substrate. A trench is formed in the substrate. Beveled surfaces are formed at upper portions of sidewalls of the trench opposite a bottom surface of the trench, respectively. An oxide layer is formed in the trench suc... | 07/08/2008 |
| 7390757 | Methods for improving low k FSG film gap-fill characteristics The present invention relates to fluorinated silicate glass (FSG) with low dielectric constant and improved gap-fill characteristics. In the present method, a fluorinated silicon source, an optional fluorine source, an optional carbon source, a hydrogen source, and ... | 06/24/2008 |
| 7387972 | Reducing nitrogen concentration with in-situ steam generation In-situ steam generation (ISSG) is used to reduce the nitrogen concentration in silicon and silicon oxide areas. ... | 06/17/2008 |
| 7384880 | Method for making a semiconductor device having a high-k gate dielectric A method for making a semiconductor device is described. That method comprises converting a hydrophobic surface of a substrate into a hydrophilic surface, and forming a high-k gate dielectric layer on the hydrophilic surface. ... | 06/10/2008 |
| 7378358 | Method for forming insulating film on substrate, method for manufacturing semiconductor device and substrate-processing apparatus A substrate-processing apparatus (100, 40) comprises a radical-forming unit (26) for forming the nitrogen radicals and oxygen radicals through a high-frequency plasma, a processing vessel (21) in which a substrate (W) to be processed is held, an... | 05/27/2008 |
| 7374994 | Bismuth titanium silicon oxide, bismuth titanium silicon oxide thin film, and method for forming the thin film A bismuth titanium silicon oxide having a pyrochlore phase, a thin film formed of the bismuth titanium silicon oxide, a method for forming the bismuth-titanium-silicon oxide thin film, a capacitor and a transistor for a semiconductor device including the bismuth-tit... | 05/20/2008 |
| 7375040 | Etch stop layer A SiOC layer and/or a SiC layer of an etch stop layer may be improved by altering the process used to form them. In a bi-layer structure, a SiOC layer and/or a SiC layer may be improved to provide better reliability. A silicon carbide (SiC) layer may be used to form... | 05/20/2008 |
| 7371461 | Multilayer hardmask scheme for damage-free dual damascene processing of SiCOH dielectrics Interconnect structures possessing an organosilicate glass based material for 90 nm and beyond BEOL technologies in which a multilayer hardmask using a line-first approach are described. The interconnect structure of the invention achieves respective improved device... | 05/13/2008 |
