Did You Know...
...that Robert Adler has the dubious distinction of being the Father of the Couch Potato? Back in 1955 Adler was employed by what was then Zenith Radio Corp., where he was charged to invent something that would allow viewers to turn down the TV volume without leaving their chairs. After a series of flops (such as a wired contraption that people tripped over), Adler hit on the idea of using sound waves. Thus the Remote Control was born...
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| Number | Title | Issue Date |
| 8148275 | Method for forming dielectric films A method for forming dielectric films including metal nitride silicate on a silicon substrate, comprises a first step of depositing a film containing metal and silicon on a silicon substrate in a non-oxidizing atmosphere using a sputtering method; a second step of f... | 04/03/2012 |
| 8148274 | Semiconductor device having oxidized metal film and manufacture method of the same A method for manufacturing a semiconductor device includes heating a substrate having an insulation film thereon to a first substrate temperature so that oxidizing species are emitted from the insulating film, the insulating film having a recessed portion formed in ... | 04/03/2012 |
| 8114789 | Formation of a tantalum-nitride layer A method of forming a material on a substrate is disclosed. In one embodiment, the method includes forming a tantalum nitride layer on a substrate disposed in a plasma process chamber by sequentially exposing the substrate to a tantalum precursor and a nitrogen prec... | 02/14/2012 |
| 8034728 | Systems and methods for forming metal oxides using metal diketonates and/or ketoimines A method of forming (and an apparatus for forming) a metal oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and one or more precursor compounds that include diketonate ligands and/or ketoimine... | 10/11/2011 |
| 8034727 | Method and apparatus for manufacturing semiconductor devices A semiconductor device manufacturing method according to the present invention uses a first raw material gas containing Si, a second raw material gas containing a metal element M and an oxidation gas, in which a first step of supplying the oxidation gas onto a subst... | 10/11/2011 |
| 8003548 | Atomic layer deposition A method for forming an atomic deposition layer is provided, which includes: (a) performing a first water pulse on a substrate; (b) performing a precursor pulse on the hydroxylated substrate, wherein the precursor reacts with the hydroxyl groups and forms a layer; (... | 08/23/2011 |
| 7998883 | Process for producing zirconium oxide thin films This invention concerns a process for producing oxide thin film on a substrate by an ALD type process. According to the process, alternating vapour-phase pulses of at least one metal source material, and at least one oxygen source material are fed into a reaction sp... | 08/16/2011 |
| 7989362 | Hafnium lanthanide oxynitride films Electronic apparatus and methods of forming the electronic apparatus include a hafnium lanthanide oxynitride film on a substrate for use in a variety of electronic systems. The hafnium lanthanide oxynitride film may be structured as one or more monolayers. Metal ele... | 08/02/2011 |
| 7972978 | Pretreatment processes within a batch ALD reactor Embodiments of the invention provide methods for forming a hafnium material on a substrate within a processing chamber. In one embodiment, a method is provided which includes exposing the substrate within the processing chamber to a first oxidizing gas during a pret... | 07/05/2011 |
| 7972977 | ALD of metal silicate films Methods for forming metal silicate films are provided. The methods comprise contacting a substrate with alternating and sequential vapor phase pulses of a silicon source chemical, metal source chemical, and an oxidizing agent, wherein the metal source chemical is th... | 07/05/2011 |
| 7968472 | Film forming method and film forming apparatus The invention includes inserting an object to be processed into a processing vessel, which can be maintained vacuum, and making the processing vessel vacuum; performing a sequence of forming a ZrO2 film on a substrate by alternately supplying zirconium so... | 06/28/2011 |
| 7923382 | Method for forming roughened surface Methods of forming a roughened metal surface on a substrate are provided, along with structures comprising such roughened surfaces. In preferred embodiments roughened surfaces are formed by selectively depositing metal or metal oxide on a substrate surface to form d... | 04/12/2011 |
| 7923381 | Methods of forming electronic devices containing Zr-Sn-Ti-O films A dielectric film containing Zr—Sn—Ti—O and methods of fabricating such a dielectric film produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO2. Films of Zr—Sn—Ti—O may be formed in a self-... | 04/12/2011 |
| 7906442 | Gas treatment method and computer readable storage medium A gas delivery apparatus comprises: a chamber surrounding a substrate to be processed; a showerhead disposed within the chamber; and gas supply means supplying a gas comprising a mixture of NH3 and H2 to the chamber, in which a coating layer de... | 03/15/2011 |
| 7871942 | Methods for manufacturing high dielectric constant film Processes for making a high K (dielectric constant) film using an ultra-high purity hafnium containing organometallic compound are disclosed. Also described are devices incorporating high K films made with high purity hafnium containing organometallic compounds.... | 01/18/2011 |
| 7867919 | Method of fabricating an apparatus having a lanthanum-metal oxide dielectric layer Lanthanum-metal oxide dielectric layers and methods of fabricating such dielectric layers provide an insulating layer in a variety of structures for use in a wide range of electronic devices and systems. In an embodiment, a lanthanum aluminum oxide dielectric layer ... | 01/11/2011 |
| 7863202 | High dielectric constant materials An integrated circuit can be formed with a high-k dielectric layer. A first titanium oxide layer is deposited over a substrate using a first ALD process. A first metal oxide layer is also deposited over the substrate using a second ALD process. A second titanium oxi... | 01/04/2011 |
| 7838441 | Deposition and densification process for titanium nitride barrier layers In one embodiment, a method for forming a titanium nitride barrier material on a substrate is provided which includes depositing a titanium nitride layer on the substrate by a metal-organic chemical vapor deposition (MOCVD) process, and thereafter, densifying the ti... | 11/23/2010 |
| 7833913 | Method of forming crystallographically stabilized doped hafnium zirconium based films A method is provided for forming doped hafnium zirconium based films by atomic layer deposition (ALD) or plasma enhanced ALD (PEALD). The method includes disposing a substrate in a process chamber and exposing the substrate to a gas pulse containing a hafnium precur... | 11/16/2010 |
| 7825043 | Method for fabricating capacitor in semiconductor device A method for fabricating a capacitor in a semiconductor device includes: forming a bottom electrode; forming a ZrxAlyOz dielectric layer on the bottom electrode using an atomic layer deposition (ALD) method, wherein the Zrx | 11/02/2010 |
| 7816283 | Method of depositing a higher permittivity dielectric film A method of depositing a high permittivity dielectric film on a doped silicon or silicon compound layer of a wafer. The method includes a first step of nitriding a specific element (A) such as hafnium Hf to form a nitride film (AxNy) on the sil... | 10/19/2010 |
| 7795160 | ALD of metal silicate films Methods for forming metal silicate films are provided. The methods comprise contacting a substrate with alternating and sequential vapor phase pulses of a metal source chemical, a silicon source chemical and an oxidizing agent. In preferred embodiments, an alkyl ami... | 09/14/2010 |
| 7786023 | Metal pad formation method and metal pad structure using the same A metal pad formation method and metal pad structure using the same are provided. A wider first pad metal is formed together with a first metal. A dielectric layer is then deposited thereon. A first opening and a second opening are formed in the dielectric layer to ... | 08/31/2010 |
| 7776766 | Trench filling method A trench embedding method comprising the steps of applying a composition for filling trenches which comprises a complex of an amine compound and aluminum hydride and an organic solvent to a substrate having trenches; and ... | 08/17/2010 |
| 7776765 | Tantalum silicon oxynitride high-k dielectrics and metal gates Electronic apparatus and methods of forming the electronic apparatus include a tantalum silicon oxynitride film on a substrate for use in a variety of electronic systems. The tantalum silicon oxynitride film may be structured as one or more monolayers. The tantalum ... | 08/17/2010 |
| 7772132 | Method for forming tetragonal zirconium oxide layer and method for fabricating capacitor having the same A method for forming a zirconium oxide (ZrO2) layer on a substrate in a chamber includes controlling a temperature of the substrate; and repeating a unit cycle of an atomic layer deposition (ALD) method. The unit cycle includes supplying a zirconium (Zr) ... | 08/10/2010 |
| 7759262 | Selective formation of dielectric etch stop layers Methods to selectively form a dielectric etch stop layer over a patterned metal feature. Embodiments include a transistor incorporating such an etch stop layer over a gate electrode. In accordance with certain embodiments of the present invention, a metal is selecti... | 07/20/2010 |
| 7754620 | Film formation method and recording medium A method of forming a metal silicate film on a silicon substrate in a processing container is disclosed that includes the steps of (a) forming a base oxide film on the silicon substrate by feeding an oxidation gas into the processing container; and (b) forming the m... | 07/13/2010 |
| 7754621 | Process for producing zirconium oxide thin films This invention concerns a process for producing oxide thin film on a substrate by an ALD type process. According to the process, alternating vapor-phase pulses of at least one metal source material, and at least one oxygen source material are fed into a reaction spa... | 07/13/2010 |
| 7745348 | Manufacturing method of a semiconductor device A method of manufacturing a semiconductor device employs a PEALD method including using an organometallic Ta precursor to form a TaN thin film. As a result, a conformal TaN diffusion barrier may be formed at a temperature of 250° C. or higher, so that impurities ar... | 06/29/2010 |
| 7737051 | Silicon germanium surface layer for high-k dielectric integration A method for using a silicon germanium (SiGe) surface layer to integrate a high-k dielectric layer into a semiconductor device. The method forms a SiGe surface layer on a substrate and deposits a high-k dielectric layer on the SiGe surface layer. An oxide layer, loc... | 06/15/2010 |
| 7732350 | Chemical vapor deposition of TiN films in a batch reactor Titanium nitride (TiN) films are formed in a batch reactor using titanium chloride (TiCl4) and ammonia (NH3) as precursors. The TiCl4 is flowed into the reactor in temporally separated pulses. The NH3 can also be flowed in... | 06/08/2010 |
| 7732351 | Manufacturing method of semiconductor device and laser processing apparatus In a manufacturing process of a semiconductor device, a manufacturing technique and a manufacturing apparatus of a semiconductor device which simplify a lithography step using a photoresist is provided, so that the manufacturing cost is reduced, and the throughput i... | 06/08/2010 |
| 7727911 | Method for forming a gate insulating film In formation of a gate insulating film made of a high dielectric constant metal silicate, atomic layer deposition (ALD) is performed by setting exposure time to a precursor containing a metal or the like to saturation time of a deposition rate by a surface adsorptio... | 06/01/2010 |
| 7727908 | Deposition of ZrA1ON films Atomic layer deposition (ALD) can be used to form a dielectric layer of zirconium aluminum oxynitride (ZrAlON) for use in a variety of electronic devices. Forming the dielectric layer may include depositing zirconium oxide using atomic layer deposition and precursor... | 06/01/2010 |
| 7727910 | Zirconium-doped zinc oxide structures and methods Methods of forming transparent conducting oxides and devices formed by these methods are shown. Monolayers that contain zinc and monolayers that contain zirconium are deposited onto a substrate and subsequently processed to form zirconium-doped zinc oxide. The resul... | 06/01/2010 |
| 7727909 | Method for producing fine-grained particles A method for producing complex metal oxide having nano-sized grains that includes the steps of forming a mixture containing at least one metal cation dissolved in a solution and particulate material containing at least one further metal in the form of metal(s) or me... | 06/01/2010 |
| 7723245 | Method for manufacturing semiconductor device, and substrate processing apparatus The ability to control a concentration ratio of a metal and silicon in a metal silicate film is improved, allowing a high-quality semiconductor device to be manufactured. A step is provided for supplying a first raw material, which contains a metal atom, and ... | 05/25/2010 |
| 7718552 | Nanostructured titania A method and device of nanostructured titania that is crack free. A method in accordance with the present invention comprises depositing a Ti film on a surface, depositing a masking layer on the Ti film, etching said masking layer to expose a limited region of the T... | 05/18/2010 |
| 7713886 | Film forming apparatus, film forming method, program and storage medium Disclosed is a film forming method using a film forming gas composed of a metal alkoxide wherein clean film formation suppressed in contamination of a target substrate to be processed is achieved by restraining aluminum or an aluminum alloy in the processing chamber... | 05/11/2010 |
