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| Number | Title | Issue Date |
| 7955993 | Oxygen plasma reduction to eliminate precursor overflow in BPTEOS film deposition A method including providing a semiconductor substrate in a reaction chamber; flowing a first reactant including silicon and oxygen, a boron dopant and a phosphorus dopant into the reaction chamber so that a layer of BPTEOS is deposited on the semiconductor substrat... | 06/07/2011 |
| 7902087 | Organic electroluminescent display device and method of preparing the same An organic electroluminescent display device and a method of preparing the same are provided. The organic electroluminescent display device may include a first electrode formed on a substrate. A second electrode may be formed so as to be insulated from the first ele... | 03/08/2011 |
| 7863201 | Methods of forming field effect transistors having silicided source/drain contacts with low contact resistance Methods of forming integrated circuit devices according to embodiments of the present invention include forming a PMOS transistor having P-type source and drain regions, in a semiconductor substrate, and then forming a diffusion barrier layer on the source and drain... | 01/04/2011 |
| 7790632 | Methods of forming a phosphorus doped silicon dioxide-comprising layer This invention includes methods of forming a phosphorus doped silicon dioxide comprising layers, and methods of forming trench isolation in the fabrication of integrated circuitry. In one implementation, a method of forming a phosphorus doped silicon dioxide compris... | 09/07/2010 |
| 7678710 | Method and apparatus for fabricating a high dielectric constant transistor gate using a low energy plasma system The present invention generally provides methods and apparatuses that are adapted to form a high quality dielectric gate layer on a substrate. Embodiments contemplate a method wherein a metal plasma treatment process is used in lieu of a standard nitridization proce... | 03/16/2010 |
| 7622400 | Method for improving mechanical properties of low dielectric constant materials Methods of forming a dielectric layer having a low dielectric constant and high mechanical strength are provided. The methods involve depositing a sub-layer of the dielectric material on a substrate, followed by treating the sub-layer with a plasma. The process of d... | 11/24/2009 |
| RE40507 | Method of forming pre-metal dielectric film on a semiconductor substrate including first layer of undoped oxide of high ozone:TEOS volume ratio and second layer of low ozone doped BPSG A method of forming a pre-metal dielectric film having good as deposited gapfill characteristics, as well as good mobile-ion gettering capability. The method involves first depositing a layer of high-ozone undoped silicon dioxide film having a high ozone/TEOS volume... | 09/16/2008 |
| 7419919 | Method of manufacturing semiconductor device A method for manufacturing a semiconductor device, in which a substrate is disposed in a chamber and a fluorine-containing silicon oxide film is formed on the substrate using a plasma CVD process. The fluorine-containing silicon oxide film is formed such that the re... | 09/02/2008 |
| 7410916 | Method of improving initiation layer for low-k dielectric film by digital liquid flow meter A method for depositing a low dielectric constant film by flowing a oxidizing gas into a processing chamber, flowing an organosilicon compound from a bulk storage container through a digital liquid flow meter at an organosilicon flow rate to a vaporization injection... | 08/12/2008 |
| 7396779 | Electronic apparatus, silicon-on-insulator integrated circuits, and fabrication methods An electronic apparatus includes an insulative substrate containing an aluminum-based glass and a layer containing a semiconductive material over the substrate. The insulative substrate can include aluminum oxycarbide. The insulative substrate can exhibit a CTE suff... | 07/08/2008 |
| 7368384 | Film formation apparatus and method of using the same A method of using a film formation apparatus for a semiconductor process includes a step of removing a by-product film deposited on an inner surface of a reaction chamber of the film formation apparatus. This step is performed while supplying a cleaning gas containi... | 05/06/2008 |
| 7335461 | Method of structuring of a subtrate The invention relates to a method of structuring of a substrate by providing a polymerization starter layer on the substrate, applying a radiation field on the polymerization starter layer for selectively reducing a density of polymerization starters of the polymeri... | 02/26/2008 |
| 7332422 | Method for CuO reduction by using two step nitrogen oxygen and reducing plasma treatment A method for cleaning a copper interconnect after a chemical-mechanical polishing that comprises: a) treating the surface of said copper interconnect with a nitrogen and oxygen containing treatment; and b) without breaking vacuum, treating the copper interconnect wi... | 02/19/2008 |
| 7316973 | Method for fabricating semiconductor device The present invention relates to a method for fabricating a semiconductor device capable of preventing bridge formation caused by damages to a capacitor oxide structure including a phosphosilicate glass (PSG) layer and a tetraethylorthosilicate (TEOS) layer during a... | 01/08/2008 |
| 7297640 | Method for reducing argon diffusion from high density plasma films A two-step high density plasma-CVD process is described wherein the argon content in the film is controlled by using two different argon concentrations in the argon/silane/oxygen gas mixture used for generating the high density plasma. The first step deposition uses... | 11/20/2007 |
| 7288488 | Method for resist strip in presence of regular low k and/or porous low k dielectric materials A two-step process is disclosed for stripping photoresist material from a substrate, wherein the substrate includes a low k dielectric material underlying the photoresist material and a polymer film overlying both the photoresist material and the low k dielectric ma... | 10/30/2007 |
| 7273822 | Methods and apparatus for forming thin films for semiconductor devices Methods and apparatus are provided for forming thin films for semiconductor devices, which enable supplying and removing reactants containing constituent elements of a thin film to be formed, by preheating and supplying a process gas and a purging gas at a predeterm... | 09/25/2007 |
| 7253121 | Method for forming IMD films A method for forming IMD films. A substrate is provided. A plurality of dielectric films are formed on the substrate, wherein each of the dielectric layers are deposited in-situ in one chamber with only one thermal cycle. ... | 08/07/2007 |
| 7253084 | Deposition from liquid sources A liquid injector is used to vaporize and inject a silicon precursor into a process chamber to form silicon-containing layers during a semiconductor fabrication process. The injector is connected to a source of silicon precursor, which preferably comprises liquid tr... | 08/07/2007 |
| 7247536 | Vertical DRAM device with self-aligned upper trench shaping A method and structure for a memory storage cell in a semiconductor substrate includes forming a dopant source material over a lower portion of a deep trench formed in the substrate. An upper portion of the trench is shaped to a generally rectangular configuration, ... | 07/24/2007 |
| 7241706 | Low k ILD layer with a hydrophilic portion Embodiments of the invention provide a relatively hydrophilic layer in a low k dielectric layer. The hydrophilic layer may be formed by exposing the dielectric layer to light having enough energy to break Si—C and C—C bonds but not enough to break Si—O bonds. | 07/10/2007 |
| 7241705 | Methods of forming conductive contacts to source/drain regions and methods of forming local interconnects The invention comprises methods of forming a conductive contact to a source/drain region of a field effect transistor, and methods of forming local interconnects. In one implementation, a method of forming a conductive contact to a source/drain region of a field eff... | 07/10/2007 |
| 7241703 | Film forming method for semiconductor device A method of forming films in a semiconductor device that can appropriately control a resistance value of a thin film resistance on an ozone TEOS film while preventing a metal thin film from remaining around a surface step unit after the metal thin film was dry etche... | 07/10/2007 |
| 7238589 | In-place bonding of microstructures A method for bonding microstructures to a semiconductor substrate using attractive forces, such as, hydrophobic, van der Waals, and covalent bonding is provided. The microstructures maintain their absolute position with respect to each other and translate vertically... | 07/03/2007 |
| 7232526 | Method and apparatus for controlling material removal from semiconductor substrate using induced current endpointing A method and apparatus for controlling the removal of material from a semiconductor substrate in an integrated circuit fabrication process is disclosed. The method and apparatus utilize a light source or charged particle beam (electron or ion beam) to induce a curre... | 06/19/2007 |
| 7229666 | Chemical vapor deposition method Methods of chemical vapor deposition include providing a deposition chamber defined at least in part by at least one of a chamber sidewall and a chamber base wall. At least one process chemical inlet to the deposition chamber is included. A substrate is positioned w... | 06/12/2007 |
| 7226875 | Method for enhancing FSG film stability A method for enhancing stability of a fluorinated silicon glass layer is disclosed. A fluorinated silicon glass layer provided on a substrate is subjected to a phosphorous-containing and hydrogen-containing gas such as phosphine (PH3), for example. The ga... | 06/05/2007 |
| 7224016 | Memory with memory cells that include a MIM type capacitor with a lower electrode made for reduced resistance at an interface with a metal film A semiconductor device includes memory cells each having an MISFET for memory selection formed on one major surface of a semiconductor substrate and a capacitive element comprised of a lower electrode electrically connected at a bottom portion to one of a source and... | 05/29/2007 |
| 7223653 | Process for forming a buried plate A method is provided for making a buried plate region in a semiconductor substrate. According to such method, a trench is formed in a semiconductor substrate, the trench having a trench sidewall, the sidewall including an upper portion, and a lower portion disposed ... | 05/29/2007 |
| 7220685 | Method for depositing porous films A processing method for depositing porous silica and doped silica films is provided. The method uses a cyclic scheme wherein each cycle comprises first codepositing silica with silicon, then selectively removing the silicon from the codeposit to form a porous struct... | 05/22/2007 |
| 7220600 | Ferroelectric capacitor stack etch cleaning methods Methods (100) are provided for fabricating a ferroelectric capacitor structure including methods (128) for etching and cleaning patterned ferroelectric capacitor structures in a semiconductor device. The methods comprise etching (140, 200) porti... | 05/22/2007 |
| 7196021 | HDP-CVD deposition process for filling high aspect ratio gaps A method for forming a silicon oxide layer over a substrate disposed in a high density plasma substrate processing chamber. The method includes flowing a process gas that includes a silicon-containing source, an oxygen-containing source and a fluorine-containing sou... | 03/27/2007 |
| 7189659 | Method for fabricating a semiconductor device A method for fabricating a semiconductor device comprises the step of depositing an insulation film 32a with a first pressure set in a deposition chamber; the step of gradually decreasing the pressure in the deposition chamber to a second pressure whic... | 03/13/2007 |
| 7176147 | Combination insulator and organic semiconductor formed from self-assembling block co-polymers A semiconductor structure including an insulator layer formed of a first polymer. The structure also includes an organic semiconductor layer formed of a second polymer. The polymers self-assemble into a well-ordered co-polymer structure with the semiconductor layer ... | 02/13/2007 |
| 7166546 | Planarization for integrated circuits A method of planarizing a layer of an integrated circuit. In one embodiment, a liquid film is applied over the layer, using extrusion coating techniques. In another embodiment, the layer itself may be applied as a liquid film, using extrusion techniques. ... | 01/23/2007 |
| 7148157 | Use of phoslon (PNO) for borderless contact fabrication, etch stop/barrier layer for dual damascene fabrication and method of forming phoslon A method of forming phoslon (PNO) comprising the following steps. A CVD reaction chamber having a reaction temperature of from about 300 to 600° C. is provided. From about 10 to 200 sccm PH3 gas, from about 50 to 4000 sccm N2 gas and from abou... | 12/12/2006 |
| 7144824 | Method for controlling the properties of DARC and manufacturing DARC A method for controlling the properties of a dielectric anti-reflective coating (DARC) is provided. In the process of forming the DARC, a nitrogen-containing gas is added to a reaction gas comprising silicon-containing gas and oxygen for controlling the n value of t... | 12/05/2006 |
| 7144806 | ALD of tantalum using a hydride reducing agent An ALD method deposits conformal tantalum-containing material layers on small features of a substrate surface. The method includes the following principal operations: depositing a thin conformal and saturated layer of tantalum-containing precursor over some or all o... | 12/05/2006 |
| 7138607 | Determining method of thermal processing condition The invention is a method of determining a set temperature profile of a method of controlling respective substrate temperatures of plurality of groups in accordance with respective corresponding set temperature profiles. The invention includes a first heat processin... | 11/21/2006 |
| 7132374 | Method for depositing porous films A processing method for depositing porous silica and doped silica films is provided. The method uses a cyclic scheme wherein each cycle comprises first codepositing silica with silicon, then selectively removing the silicon to form a porous structure. In a preferred... | 11/07/2006 |
